JP6506702B2 - 磁気抵抗素子の製造方法および真空処理装置 - Google Patents

磁気抵抗素子の製造方法および真空処理装置 Download PDF

Info

Publication number
JP6506702B2
JP6506702B2 JP2016000030A JP2016000030A JP6506702B2 JP 6506702 B2 JP6506702 B2 JP 6506702B2 JP 2016000030 A JP2016000030 A JP 2016000030A JP 2016000030 A JP2016000030 A JP 2016000030A JP 6506702 B2 JP6506702 B2 JP 6506702B2
Authority
JP
Japan
Prior art keywords
magnetoresistive element
magnetic film
gas
mgo
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016000030A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017123355A5 (enExample
JP2017123355A (ja
Inventor
真 佐竹
真 佐竹
将貴 山田
将貴 山田
横川　賢悦
賢悦 横川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2016000030A priority Critical patent/JP6506702B2/ja
Priority to KR1020160098405A priority patent/KR101786776B1/ko
Priority to TW105125449A priority patent/TWI600121B/zh
Priority to US15/251,595 priority patent/US10243140B2/en
Publication of JP2017123355A publication Critical patent/JP2017123355A/ja
Publication of JP2017123355A5 publication Critical patent/JP2017123355A5/ja
Application granted granted Critical
Publication of JP6506702B2 publication Critical patent/JP6506702B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2016000030A 2016-01-04 2016-01-04 磁気抵抗素子の製造方法および真空処理装置 Active JP6506702B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016000030A JP6506702B2 (ja) 2016-01-04 2016-01-04 磁気抵抗素子の製造方法および真空処理装置
KR1020160098405A KR101786776B1 (ko) 2016-01-04 2016-08-02 자기 저항 소자의 제조 방법 및 진공 처리 장치
TW105125449A TWI600121B (zh) 2016-01-04 2016-08-10 Method for manufacturing magnetoresistive element and vacuum processing apparatus
US15/251,595 US10243140B2 (en) 2016-01-04 2016-08-30 Manufacturing method of magnetoresistive element and vacuum processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016000030A JP6506702B2 (ja) 2016-01-04 2016-01-04 磁気抵抗素子の製造方法および真空処理装置

Publications (3)

Publication Number Publication Date
JP2017123355A JP2017123355A (ja) 2017-07-13
JP2017123355A5 JP2017123355A5 (enExample) 2018-06-07
JP6506702B2 true JP6506702B2 (ja) 2019-04-24

Family

ID=59226958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016000030A Active JP6506702B2 (ja) 2016-01-04 2016-01-04 磁気抵抗素子の製造方法および真空処理装置

Country Status (4)

Country Link
US (1) US10243140B2 (enExample)
JP (1) JP6506702B2 (enExample)
KR (1) KR101786776B1 (enExample)
TW (1) TWI600121B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110856454B (zh) * 2018-06-20 2023-09-29 株式会社日立高新技术 磁阻元件的制造方法
CN109346390A (zh) * 2018-08-31 2019-02-15 湖北汉光科技股份有限公司 铯束管用电子倍增器的二次发射体的制作方法
US10840441B2 (en) * 2018-09-14 2020-11-17 International Business Machines Corporation Diamond-like carbon hardmask for MRAM
US11997931B2 (en) 2018-10-31 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Bar-type magnetoresistive random access memory cell
KR20220125050A (ko) * 2021-03-04 2022-09-14 삼성전자주식회사 자기터널접합 소자, 자기터널접합 소자를 포함하는 메모리 장치, 및 자기터널접합 소자의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2677321B2 (ja) 1995-03-15 1997-11-17 科学技術庁金属材料技術研究所長 ドライエッチング方法
EP1340269B1 (en) * 2000-11-30 2009-02-25 Asm International N.V. Thin films for magnetic devices
JP4111274B2 (ja) 2003-07-24 2008-07-02 キヤノンアネルバ株式会社 磁性材料のドライエッチング方法
US8119018B2 (en) * 2006-09-13 2012-02-21 Canon Anelva Corporation Magnetoresistive effect element manufacturing method and multi-chamber apparatus for manufacturing magnetoresistive effect element
JP2008181971A (ja) * 2007-01-23 2008-08-07 Renesas Technology Corp 不揮発性記憶装置、磁気抵抗素子および磁気抵抗素子の製造方法
JP5366235B2 (ja) 2008-01-28 2013-12-11 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
US9147833B2 (en) * 2013-07-05 2015-09-29 Headway Technologies, Inc. Hybridized oxide capping layer for perpendicular magnetic anisotropy

Also Published As

Publication number Publication date
KR20170081556A (ko) 2017-07-12
US20170194560A1 (en) 2017-07-06
KR101786776B1 (ko) 2017-10-18
TWI600121B (zh) 2017-09-21
US10243140B2 (en) 2019-03-26
TW201725663A (zh) 2017-07-16
JP2017123355A (ja) 2017-07-13

Similar Documents

Publication Publication Date Title
US8981507B2 (en) Method for manufacturing nonvolatile memory device
JP6506702B2 (ja) 磁気抵抗素子の製造方法および真空処理装置
JP4354519B2 (ja) 磁気抵抗効果素子の製造方法
US10157961B2 (en) Method of manufacturing magnetoresistive element
TWI657499B (zh) 蝕刻方法
US11658043B2 (en) Selective anisotropic metal etch
KR101066158B1 (ko) 자기 소자의 제조 방법 및 제조 장치
US12080562B2 (en) Atomic layer etch and ion beam etch patterning
US8425786B2 (en) Plasma etching method and plasma etching apparatus
US11678583B2 (en) Method of manufacturing magnetic tunnel junction and magnetic tunnel junction
JP2012204408A (ja) 半導体装置の製造方法
TW201503257A (zh) 電漿蝕刻方法
US20120315745A1 (en) Crystalline silicon film forming method and plasma cvd apparatus
KR20160088855A (ko) 피에칭층을 에칭하는 방법
KR101721020B1 (ko) 자기 저항 효과 소자의 제조 방법
US20100301008A1 (en) Process and apparatus for fabricating magnetic device
WO2022154901A1 (en) Metal etch
CN108511389A (zh) 半导体制造方法和等离子体处理装置
US20250359484A1 (en) Method of processing magnetic film, method of manufacturing magnetic device, and processing apparatus
KR20170019035A (ko) 루테늄 박막의 식각방법
US12035538B2 (en) Method of forming memory device with physical vapor deposition system

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20170803

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180411

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180411

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190305

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190329

R150 Certificate of patent or registration of utility model

Ref document number: 6506702

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350