JP2010521062A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010521062A5 JP2010521062A5 JP2009551738A JP2009551738A JP2010521062A5 JP 2010521062 A5 JP2010521062 A5 JP 2010521062A5 JP 2009551738 A JP2009551738 A JP 2009551738A JP 2009551738 A JP2009551738 A JP 2009551738A JP 2010521062 A5 JP2010521062 A5 JP 2010521062A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- carbon monoxide
- thin film
- oxide
- source gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 22
- 238000001020 plasma etching Methods 0.000 claims 9
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 8
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 7
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 2
- 239000003701 inert diluent Substances 0.000 claims 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/681,022 US7955515B2 (en) | 2005-07-11 | 2007-03-01 | Method of plasma etching transition metal oxides |
| US11/681,022 | 2007-03-01 | ||
| PCT/US2008/002706 WO2008106222A1 (en) | 2007-03-01 | 2008-02-29 | Method of plasma etching transition metal oxides |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010521062A JP2010521062A (ja) | 2010-06-17 |
| JP2010521062A5 true JP2010521062A5 (enExample) | 2011-03-17 |
| JP5042319B2 JP5042319B2 (ja) | 2012-10-03 |
Family
ID=39760705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009551738A Expired - Fee Related JP5042319B2 (ja) | 2007-03-01 | 2008-02-29 | 遷移金属酸化物をプラズマエッチングする方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7955515B2 (enExample) |
| EP (1) | EP2115187A4 (enExample) |
| JP (1) | JP5042319B2 (enExample) |
| KR (1) | KR20090125244A (enExample) |
| CN (1) | CN101657567A (enExample) |
| TW (1) | TWI445077B (enExample) |
| WO (1) | WO2008106222A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7955515B2 (en) * | 2005-07-11 | 2011-06-07 | Sandisk 3D Llc | Method of plasma etching transition metal oxides |
| US8916067B2 (en) | 2011-10-19 | 2014-12-23 | The Aerospace Corporation | Carbonaceous nano-scaled materials having highly functionalized surface |
| GB201416483D0 (en) * | 2014-09-18 | 2014-11-05 | Rolls Royce Plc | A method of machinging a gas turbine engine component |
| US20190385828A1 (en) * | 2018-06-19 | 2019-12-19 | Lam Research Corporation | Temperature control systems and methods for removing metal oxide films |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4659426A (en) * | 1985-05-03 | 1987-04-21 | Texas Instruments Incorporated | Plasma etching of refractory metals and their silicides |
| JPS63244848A (ja) | 1987-03-31 | 1988-10-12 | Toshiba Corp | ドライエツチング方法 |
| JP2871632B2 (ja) * | 1996-11-15 | 1999-03-17 | 日本電気株式会社 | ドライエッチング方法及びガス処理装置 |
| US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
| KR100397860B1 (ko) | 1997-09-22 | 2003-12-18 | 카가쿠기쥬쯔죠 킨조쿠자이료 기쥬쯔켄큐죠 | 반응성이온에칭법및그장치 |
| JP2000114246A (ja) * | 1998-08-07 | 2000-04-21 | Ulvac Seimaku Kk | ドライエッチング方法および装置、フォトマスクおよびその作製方法、ならびに半導体回路およびその製作方法 |
| US6555455B1 (en) * | 1998-09-03 | 2003-04-29 | Micron Technology, Inc. | Methods of passivating an oxide surface subjected to a conductive material anneal |
| JP4257808B2 (ja) | 1999-05-11 | 2009-04-22 | 独立行政法人科学技術振興機構 | 磁性材料のエッチング方法及びプラズマエッチング装置 |
| JP3433721B2 (ja) * | 2000-03-28 | 2003-08-04 | ティーディーケイ株式会社 | ドライエッチング方法及び微細加工方法 |
| JP4852213B2 (ja) * | 2000-05-12 | 2012-01-11 | 東京エレクトロン株式会社 | 高選択性のｓａｃのエッチングの方法 |
| US6225202B1 (en) * | 2000-06-21 | 2001-05-01 | Chartered Semiconductor Manufacturing, Ltd. | Selective etching of unreacted nickel after salicidation |
| US6525953B1 (en) * | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
| US7229563B2 (en) * | 2002-01-29 | 2007-06-12 | Tokyo Electron Limited | Plasma etching of Ni-containing materials |
| US6806095B2 (en) * | 2002-03-06 | 2004-10-19 | Padmapani C. Nallan | Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers |
| JP4377698B2 (ja) | 2002-04-08 | 2009-12-02 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| US7094704B2 (en) * | 2002-05-09 | 2006-08-22 | Applied Materials, Inc. | Method of plasma etching of high-K dielectric materials |
| US20040014327A1 (en) * | 2002-07-18 | 2004-01-22 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| US6946719B2 (en) * | 2003-12-03 | 2005-09-20 | Matrix Semiconductor, Inc | Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide |
| KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
| US7338907B2 (en) * | 2004-10-04 | 2008-03-04 | Sharp Laboratories Of America, Inc. | Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications |
| US7656696B2 (en) * | 2005-02-14 | 2010-02-02 | Samsung Electronics Co., Ltd. | Resistive memory device having resistor part for controlling switching window |
| US20060250836A1 (en) * | 2005-05-09 | 2006-11-09 | Matrix Semiconductor, Inc. | Rewriteable memory cell comprising a diode and a resistance-switching material |
| US7955515B2 (en) * | 2005-07-11 | 2011-06-07 | Sandisk 3D Llc | Method of plasma etching transition metal oxides |
| US20070010100A1 (en) * | 2005-07-11 | 2007-01-11 | Matrix Semiconductor, Inc. | Method of plasma etching transition metals and their compounds |
-
2007
- 2007-03-01 US US11/681,022 patent/US7955515B2/en not_active Expired - Fee Related
-
2008
- 2008-02-29 KR KR1020097018135A patent/KR20090125244A/ko not_active Ceased
- 2008-02-29 EP EP08726277A patent/EP2115187A4/en not_active Withdrawn
- 2008-02-29 TW TW097107254A patent/TWI445077B/zh not_active IP Right Cessation
- 2008-02-29 WO PCT/US2008/002706 patent/WO2008106222A1/en not_active Ceased
- 2008-02-29 JP JP2009551738A patent/JP5042319B2/ja not_active Expired - Fee Related
- 2008-02-29 CN CN200880006814A patent/CN101657567A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8993351B2 (en) | Method of manufacturing tunneling magnetoresistive element | |
| JP2015018885A5 (enExample) | ||
| JP2009278130A5 (enExample) | ||
| JP2015154047A5 (enExample) | ||
| JP2011129895A5 (enExample) | ||
| JP2008034814A5 (enExample) | ||
| JP2010521062A5 (enExample) | ||
| CN104036897B (zh) | 一种永磁材料及其制造方法 | |
| RU2012143308A (ru) | Магнитокалорические материалы | |
| WO2009152327A3 (en) | Post oxidation annealing of low temperature thermal or plasma based oxidation | |
| WO2008147756A3 (en) | In-situ photoresist strip during plasma etching of active hard mask | |
| JP2009065181A5 (enExample) | ||
| JP2011238900A5 (enExample) | ||
| JP2016148108A (ja) | ネオジム磁石の表面コーティング装置及び表面コーティング方法 | |
| JP2017123355A5 (enExample) | ||
| JP2014107364A5 (ja) | プラズマ処理方法 | |
| CN102127622B (zh) | 一种通过脉冲电场热处理提高取向硅钢磁性能的方法 | |
| CN101705392A (zh) | 一种增韧铁磁性形状记忆合金及其制备方法 | |
| CN103741003A (zh) | 新型高温磁性形状记忆合金及其制备方法 | |
| JP2007031817A5 (enExample) | ||
| CN101220448A (zh) | 一种增韧磁性形状记忆合金的制备方法 | |
| US20120276395A1 (en) | Casing with ceramic surface and manufacturing method thereof | |
| US20140218842A1 (en) | Capacitor cathode foil structure and manufacturing method thereof | |
| JP2009170355A (ja) | イオンガン及び成膜装置 | |
| JP2006156995A5 (enExample) |