JP2017108074A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2017108074A JP2017108074A JP2015242472A JP2015242472A JP2017108074A JP 2017108074 A JP2017108074 A JP 2017108074A JP 2015242472 A JP2015242472 A JP 2015242472A JP 2015242472 A JP2015242472 A JP 2015242472A JP 2017108074 A JP2017108074 A JP 2017108074A
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- hydrogen storage
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Abstract
【解決手段】半導体基板と、半導体基板の上面の上方に設けられ、水素吸蔵性を有する第1金属で形成された水素吸蔵層と、水素吸蔵層の上方に設けられ、第1金属の窒化物で形成された窒化物層と、窒化物層の上方に設けられ、アルミニウムと第2金属の合金で形成された合金層と、合金層の上方に設けられ、アルミニウムで形成された電極層とを備え、電極層と窒化物層の間には、第2金属の純金属層が設けられていない半導体装置を提供する。
【選択図】図2
Description
特許文献1 特開2012−129503号公報
Claims (15)
- 半導体基板と、
前記半導体基板の上面の上方に設けられ、水素吸蔵性を有する第1金属で形成された水素吸蔵層と、
前記水素吸蔵層の上方に設けられ、前記第1金属の窒化物で形成された窒化物層と、
前記窒化物層の上方に設けられ、アルミニウムと第2金属の合金で形成された合金層と、
前記合金層の上方に設けられ、アルミニウムで形成された電極層と
を備え、
前記電極層と前記窒化物層の間には、前記第2金属の純金属層が設けられていない半導体装置。 - 前記第1金属は、チタンである
請求項1に記載の半導体装置。 - 前記第2金属は、チタン、モリブデン、タングステン、バナジウム、クロム、銅およびニッケルのうちのいずれかである
請求項1または2に記載の半導体装置。 - 前記第2金属は、チタンである
請求項3に記載の半導体装置。 - 前記合金層の厚みが、15nm以上である
請求項1から4のいずれか一項に記載の半導体装置。 - 前記合金層の厚みが、0.5μm以下である
請求項5に記載の半導体装置。 - 前記電極層の厚みが3μm以下である
請求項1から6のいずれか一項に記載の半導体装置。 - 前記電極層の厚みが1μm以上、2μm以下である
請求項7に記載の半導体装置。 - 前記電極層の上方に半田層を更に備える
請求項1から8のいずれか一項に記載の半導体装置。 - 前記合金層は、少なくとも前記半田層と対向する領域に形成される
請求項9に記載の半導体装置。 - 前記半導体基板の上面の上方に設けられた層間絶縁膜を更に備え、
前記層間絶縁膜には、前記半導体基板の上面に形成されたソース領域を露出させる開口が形成されており、
前記水素吸蔵層、前記窒化物層および前記合金層が、前記層間絶縁膜の前記開口の上方に少なくとも形成される
請求項1から10のいずれか一項に記載の半導体装置。 - 前記水素吸蔵層、前記窒化物層および前記合金層は、前記層間絶縁膜の前記開口の側面に沿った領域にも形成される
請求項11に記載の半導体装置。 - 前記半導体基板は、炭化珪素基板である
請求項1から12のいずれか一項に記載の半導体装置。 - 半導体装置の製造方法であって、
半導体基板の上面の上方に、水素吸蔵性を有する第1金属で形成された水素吸蔵層を積層する段階と、
前記水素吸蔵層の上方に、前記第1金属の窒化物で形成された窒化物層を積層する段階と、
前記窒化物層の上方に、第2金属で形成された前駆層を積層する段階と、
前記前駆層上にアルミニウムを積層することで、前記前駆層の全てをアルミニウムで合金化して合金層を形成するとともに、前記合金層上にアルミニウムの電極層を形成する段階と
を備える半導体装置の製造方法。 - 前記アルミニウムの積層温度が、200度以上である
請求項14に記載の半導体装置の製造方法。
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CN201610940128.5A CN107017288B (zh) | 2015-12-11 | 2016-10-25 | 半导体装置及半导体装置的制造方法 |
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WO2018135311A1 (ja) | 2017-01-23 | 2018-07-26 | Phcホールディングス株式会社 | 収納装置 |
JP2019096643A (ja) * | 2017-11-17 | 2019-06-20 | 株式会社 日立パワーデバイス | 半導体チップおよびパワーモジュールならびにその製造方法 |
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CN107017288B (zh) | 2022-07-01 |
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