JP2017092136A - 光素子用パッケージ及びその製造方法と光素子装置 - Google Patents
光素子用パッケージ及びその製造方法と光素子装置 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 229910000679 solder Inorganic materials 0.000 claims description 33
- 239000000919 ceramic Substances 0.000 claims description 21
- 230000017525 heat dissipation Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 19
- 239000004020 conductor Substances 0.000 description 25
- 239000010931 gold Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000835 fiber Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】アイレット12と、アイレット12の上に立設する放熱部14と、アイレット12に形成された貫通孔12a,12bと、貫通孔12a,12bに封着され、アイレット12の下側に配置されるリード部21a,22aと、アイレット12の上側に配置されるリード配線部21b,22bとを備えたリード21,22と、リード配線部21b,22bと放熱部14との間に配置され、表面に素子搭載パッドPが形成された絶縁基板50とを含み、リード配線部21b,22bが素子搭載パッドPの外側の絶縁基板50の上に配置されている。
【選択図】図10
Description
図2〜図9は実施形態の光素子用パッケージの製造方法を説明するための図、図10は実施形態の光素子用パッケージを示す図である。以下、光素子用パッケージの製造方法を説明しながら、光素子用パッケージの構造について説明する。
絶縁基板50(セラミックス基板(誘電率:9))の厚み:0.2mm
リード配線部21b,22bの厚み:0.2mm
リード配線部21b,22bの幅:0.36mm
金属層52(グランド)の厚み:0.2mm
これにより、伝送経路全体の特性インピーダンスの整合をとることができる。よって、より高速な電気信号の伝送に対応することが可能になり、10Gbps以上の大容量光通信のアプリケーションに対応することができる。
Claims (10)
- アイレットと、
前記アイレットの上に立設する放熱部と、
前記アイレットに形成された貫通孔と、
前記貫通孔に封着され、前記アイレットの下側に配置されるリード部と、前記アイレットの上側に配置されるリード配線部とを備えたリードと、
前記リード配線部と前記放熱部との間に配置され、表面に素子搭載パッドが形成された絶縁基板とを有し、
前記リード配線部が前記素子搭載パッドの外側の前記絶縁基板の上に配置されていることを特徴とする光素子用パッケージ。 - 前記絶縁基板の裏面に金属層が形成され、前記金属層がはんだによって前記放熱部に接合されていることを特徴とする請求項1に記載の光素子用パッケージ。
- 前記リード配線部は、前記絶縁基板の表面に直接接触していることを特徴とする請求項1又は2に記載の光素子用パッケージ。
- 前記絶縁基板はセラミックス基板であり、前記絶縁基板に形成された素子搭載パッド及び金属層は金属めっき層から形成されることを特徴とする請求項1乃至3のいずれか一項に記載の光素子用パッケージ。
- 前記リード配線部は、前記アイレット上の根本部分で前記絶縁基板側に屈曲する屈曲部を有し、前記リード配線部の前記絶縁基板側の側面が垂直面になっていることを特徴とする請求項1乃至4のいずれか一項に記載の光素子用パッケージ。
- アイレットと、
前記アイレットの上に立設する放熱部と、
前記アイレットに形成された貫通孔と、
前記貫通孔に封着され、前記アイレットの下側に配置されるリード部と、前記アイレットの上側に配置されるリード配線部とを備えたリードと、
前記リード配線部と前記放熱部の側面との間に配置され、表面に素子搭載パッドが形成された絶縁基板とを有し、
前記リード配線部が前記素子搭載パッドの外側の前記絶縁基板の上に配置された光素子用パッケージと、
前記光素子用パッケージの素子搭載パッドに搭載された発光素子と、
前記発光素子と前記リード配線部とを接続するワイヤと
を有する光素子装置。 - アイレットと、前記アイレットの上に立設する放熱部と、前記アイレットに形成された貫通孔とを備えた金属基体を用意する工程と、
リード部とリード配線部とを備えたリードを用意する工程と、
前記リードを前記アイレットの貫通孔に封着して、前記アイレットの下側に前記リード部を配置すると共に、前記アイレットの上側に前記リード配線部を配置する工程と、
前記リード配線部と前記放熱部との間に、表面に素子搭載パッドを備えた絶縁基板を配置する工程とを有し、
前記リード配線部が前記素子搭載パッドの外側の前記絶縁基板の上に配置されることを特徴とする光素子用パッケージの製造方法。 - 前記絶縁基板を配置する工程において、
前記絶縁基板の裏面に金属層が形成され、前記金属層がはんだによって前記放熱部に接合され、かつ、前記リード配線部は前記絶縁基板に直接接触することを特徴とする請求項7に記載の光素子用パッケージの製造方法。 - 前記リードを前記アイレットの貫通孔に封着する工程において、
2本の前記リードの各リード配線部がタイバ―に連結されたリード部材を用意し、前記リード部材の2本のリードを2つの前記貫通孔に封着した後に、前記タイバーを前記リード配線部から分離することを特徴とする請求項7又は8に記載の光素子用パッケージの製造方法。 - 前記リードを前記アイレットの貫通孔に封着する工程の後であって、前記絶縁基板を配置する工程の前に、
前記リード配線部と前記放熱部との間にスペーサを配置し、押圧部材で前記リード配線部を前記スペーサに押し付けて、前記リード配線部の側面を垂直面に矯正する工程を有することを特徴とする請求項7乃至9のいずれか一項に記載の光素子用パッケージの製造方法。
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US15/341,427 US10389084B2 (en) | 2015-11-05 | 2016-11-02 | Optical element package and optical element device |
CN201610945411.7A CN106680959B (zh) | 2015-11-05 | 2016-11-02 | 光学元件封装和光学元件设备 |
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JP2019129302A (ja) * | 2018-01-26 | 2019-08-01 | ローム株式会社 | 半導体レーザ装置 |
WO2020175619A1 (ja) * | 2019-02-28 | 2020-09-03 | 京セラ株式会社 | 電子部品搭載用パッケージ、電子装置及び発光装置 |
JP2020178038A (ja) * | 2019-04-18 | 2020-10-29 | 新光電気工業株式会社 | 半導体装置用ステム及び半導体装置 |
JP2021027136A (ja) * | 2019-08-02 | 2021-02-22 | CIG Photonics Japan株式会社 | 光モジュール |
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JP7350646B2 (ja) * | 2019-12-17 | 2023-09-26 | CIG Photonics Japan株式会社 | 光モジュール |
US11340412B2 (en) * | 2020-02-28 | 2022-05-24 | CIG Photonics Japan Limited | Optical module |
JP7382871B2 (ja) | 2020-03-24 | 2023-11-17 | 新光電気工業株式会社 | 半導体パッケージ用ステム、半導体パッケージ |
JP7382872B2 (ja) * | 2020-03-24 | 2023-11-17 | 新光電気工業株式会社 | 半導体パッケージ用ステム、半導体パッケージ |
JP7437278B2 (ja) * | 2020-09-25 | 2024-02-22 | CIG Photonics Japan株式会社 | 光モジュール |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63178344U (ja) * | 1987-05-09 | 1988-11-18 | ||
JPH054598U (ja) * | 1991-06-28 | 1993-01-22 | 関西日本電気株式会社 | リード成形装置 |
JP2002222907A (ja) * | 2001-01-23 | 2002-08-09 | Fujitsu Ltd | Canタイプ光デバイスのリード曲げ方法 |
JP2004241480A (ja) * | 2003-02-04 | 2004-08-26 | Mitsubishi Electric Corp | 光半導体装置 |
JP2004363550A (ja) * | 2003-06-04 | 2004-12-24 | Samsung Electronics Co Ltd | 光素子モジュールパッケージ及びその製造方法 |
JP2006253639A (ja) * | 2005-02-14 | 2006-09-21 | Mitsubishi Electric Corp | 光半導体素子パッケージおよび光半導体素子 |
JP2010087020A (ja) * | 2008-09-29 | 2010-04-15 | Nec Electronics Corp | 半導体レーザモジュール |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4152624A (en) * | 1978-03-16 | 1979-05-01 | Monsanto Company | Molded LED indicator |
US6020632A (en) * | 1997-02-26 | 2000-02-01 | Motorola, Inc. | Electronic component including an adjustable cap |
TW357470B (en) * | 1997-07-15 | 1999-05-01 | Kai-Feng Huang | Vertical resonance cavity injection-type glowing laser package |
JP2003037329A (ja) * | 2001-07-24 | 2003-02-07 | Hitachi Cable Ltd | 光送信器 |
JP4586337B2 (ja) * | 2002-08-26 | 2010-11-24 | 住友電気工業株式会社 | 半導体レーザモジュールおよび半導体レーザ装置 |
JP3848616B2 (ja) * | 2002-10-15 | 2006-11-22 | 新光電気工業株式会社 | ガラス端子 |
JP3931810B2 (ja) * | 2002-12-27 | 2007-06-20 | アイシン・エィ・ダブリュ株式会社 | 車輌の制御装置 |
JP4617636B2 (ja) * | 2003-03-19 | 2011-01-26 | 住友電気工業株式会社 | 光モジュール |
US7196389B2 (en) * | 2005-02-14 | 2007-03-27 | Mitsubishi Denki Kabushiki Kaisha | Optical semiconductor device package and optical semiconductor device |
TWI302758B (en) * | 2006-04-21 | 2008-11-01 | Silicon Base Dev Inc | Package base structure of photo diode and manufacturing method of the same |
TWI346395B (en) * | 2007-03-02 | 2011-08-01 | Advanced Optoelectronic Tech | Packaging structure of laser diode surface mount device and fabricating method thereof |
DE102009018603B9 (de) * | 2008-04-25 | 2021-01-14 | Samsung Electronics Co., Ltd. | Leuchtvorrichtung und Herstellungsverfahren derselben |
JP2010062512A (ja) * | 2008-07-02 | 2010-03-18 | Kyocera Corp | 電子部品搭載用パッケージおよびそれを用いた電子装置 |
JP5473583B2 (ja) * | 2009-12-22 | 2014-04-16 | 京セラ株式会社 | 電子部品搭載用パッケージおよびそれを用いた電子装置 |
TWI404159B (zh) * | 2010-03-04 | 2013-08-01 | Univ Nat Kaohsiung Applied Sci | 高速率雷射二極體封裝座 |
JP6614811B2 (ja) * | 2015-05-29 | 2019-12-04 | 新光電気工業株式会社 | 半導体装置用ステム及び半導体装置 |
-
2015
- 2015-11-05 JP JP2015217491A patent/JP6678007B2/ja active Active
-
2016
- 2016-11-02 US US15/341,427 patent/US10389084B2/en active Active
- 2016-11-02 CN CN201610945411.7A patent/CN106680959B/zh active Active
- 2016-11-04 TW TW105135905A patent/TWI743060B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63178344U (ja) * | 1987-05-09 | 1988-11-18 | ||
JPH054598U (ja) * | 1991-06-28 | 1993-01-22 | 関西日本電気株式会社 | リード成形装置 |
JP2002222907A (ja) * | 2001-01-23 | 2002-08-09 | Fujitsu Ltd | Canタイプ光デバイスのリード曲げ方法 |
JP2004241480A (ja) * | 2003-02-04 | 2004-08-26 | Mitsubishi Electric Corp | 光半導体装置 |
JP2004363550A (ja) * | 2003-06-04 | 2004-12-24 | Samsung Electronics Co Ltd | 光素子モジュールパッケージ及びその製造方法 |
JP2006253639A (ja) * | 2005-02-14 | 2006-09-21 | Mitsubishi Electric Corp | 光半導体素子パッケージおよび光半導体素子 |
JP2010087020A (ja) * | 2008-09-29 | 2010-04-15 | Nec Electronics Corp | 半導体レーザモジュール |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019129302A (ja) * | 2018-01-26 | 2019-08-01 | ローム株式会社 | 半導体レーザ装置 |
JP7045204B2 (ja) | 2018-01-26 | 2022-03-31 | ローム株式会社 | 半導体レーザ装置 |
WO2020175619A1 (ja) * | 2019-02-28 | 2020-09-03 | 京セラ株式会社 | 電子部品搭載用パッケージ、電子装置及び発光装置 |
JPWO2020175619A1 (ja) * | 2019-02-28 | 2021-12-16 | 京セラ株式会社 | 電子部品搭載用パッケージ、電子装置及び発光装置 |
JP2020178038A (ja) * | 2019-04-18 | 2020-10-29 | 新光電気工業株式会社 | 半導体装置用ステム及び半導体装置 |
JP7398877B2 (ja) | 2019-04-18 | 2023-12-15 | 新光電気工業株式会社 | 半導体装置用ステム及び半導体装置 |
JP2021027136A (ja) * | 2019-08-02 | 2021-02-22 | CIG Photonics Japan株式会社 | 光モジュール |
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US10389084B2 (en) | 2019-08-20 |
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US20170133821A1 (en) | 2017-05-11 |
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