JP2017085088A5 - - Google Patents
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- Publication number
- JP2017085088A5 JP2017085088A5 JP2016192428A JP2016192428A JP2017085088A5 JP 2017085088 A5 JP2017085088 A5 JP 2017085088A5 JP 2016192428 A JP2016192428 A JP 2016192428A JP 2016192428 A JP2016192428 A JP 2016192428A JP 2017085088 A5 JP2017085088 A5 JP 2017085088A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- processing chamber
- ampoule
- flow
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002243 precursor Substances 0.000 claims 91
- 239000003708 ampul Substances 0.000 claims 79
- 238000000034 method Methods 0.000 claims 56
- 239000007789 gas Substances 0.000 claims 43
- 238000002347 injection Methods 0.000 claims 32
- 239000007924 injection Substances 0.000 claims 32
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000001179 sorption measurement Methods 0.000 claims 15
- 239000012530 fluid Substances 0.000 claims 8
- 238000002513 implantation Methods 0.000 claims 6
- 238000006243 chemical reaction Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000001802 infusion Methods 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- -1 oxide Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562236780P | 2015-10-02 | 2015-10-02 | |
| US62/236,780 | 2015-10-02 | ||
| US14/929,073 US10094018B2 (en) | 2014-10-16 | 2015-10-30 | Dynamic precursor dosing for atomic layer deposition |
| US14/929,073 | 2015-10-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017085088A JP2017085088A (ja) | 2017-05-18 |
| JP2017085088A5 true JP2017085088A5 (enExample) | 2019-11-07 |
| JP6804920B2 JP6804920B2 (ja) | 2020-12-23 |
Family
ID=58446674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016192428A Active JP6804920B2 (ja) | 2015-10-02 | 2016-09-30 | 原子層堆積のための動的前駆体注入 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10094018B2 (enExample) |
| JP (1) | JP6804920B2 (enExample) |
| KR (2) | KR102697645B1 (enExample) |
| CN (2) | CN107068585B (enExample) |
| SG (2) | SG10201608005WA (enExample) |
| TW (1) | TWI737630B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US11970772B2 (en) | 2014-08-22 | 2024-04-30 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
| US10094018B2 (en) | 2014-10-16 | 2018-10-09 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
| US11072860B2 (en) | 2014-08-22 | 2021-07-27 | Lam Research Corporation | Fill on demand ampoule refill |
| US11393703B2 (en) | 2018-06-18 | 2022-07-19 | Applied Materials, Inc. | Apparatus and method for controlling a flow process material to a deposition chamber |
| TWI821363B (zh) * | 2018-08-31 | 2023-11-11 | 美商應用材料股份有限公司 | 前驅物遞送系統 |
| CN109881180B (zh) * | 2019-01-31 | 2020-07-07 | 华中科技大学 | 一种用于微纳米颗粒的快速循环原子层沉积设备 |
| KR102726216B1 (ko) | 2019-05-01 | 2024-11-04 | 램 리써치 코포레이션 | 변조된 원자 층 증착 |
| CN114245832B (zh) | 2019-06-07 | 2025-10-28 | 朗姆研究公司 | 原子层沉积期间的膜特性的原位控制 |
| WO2021030364A1 (en) | 2019-08-12 | 2021-02-18 | Lam Research Corporation | Dynamic process control in semiconductor manufacturing |
| KR102703185B1 (ko) | 2019-09-02 | 2024-09-05 | 삼성전자주식회사 | 가스 공급기 및 이를 포함하는 박막 증착 장치 |
| JP6857760B2 (ja) * | 2020-02-18 | 2021-04-14 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
| WO2021247946A1 (en) | 2020-06-06 | 2021-12-09 | Lam Research Corporation | Removable showerhead faceplate for semiconductor processing tools |
| CN115917039A (zh) | 2020-07-29 | 2023-04-04 | 朗姆研究公司 | 使用起泡器的浓度控制 |
| US11566327B2 (en) | 2020-11-20 | 2023-01-31 | Applied Materials, Inc. | Methods and apparatus to reduce pressure fluctuations in an ampoule of a chemical delivery system |
| US11487304B2 (en) * | 2021-01-08 | 2022-11-01 | Applied Materials, Inc. | Process fluid path switching in recipe operations |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1813318C3 (de) | 1968-12-07 | 1974-01-03 | Alexander 2000 Hamburg Kueckens | Zeitgesteuerte Dosiervorrichtung für flüssige Medien aus festen und elastischen Behältern |
| JPS63136614A (ja) | 1986-11-28 | 1988-06-08 | Hitachi Ltd | 処理装置 |
| JP3250111B2 (ja) | 1992-06-16 | 2002-01-28 | 株式会社日立製作所 | 光磁気ディスク装置 |
| US5465766A (en) | 1993-04-28 | 1995-11-14 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
| JP3380610B2 (ja) * | 1993-11-30 | 2003-02-24 | 株式会社サムコインターナショナル研究所 | 液体原料cvd装置 |
| US5944940A (en) | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
| TW535216B (en) | 1996-09-13 | 2003-06-01 | Tokyo Electron Ltd | Photoresist processing method and photoresist processing system |
| TW382749B (en) | 1996-12-24 | 2000-02-21 | Tokyo Electron Ltd | Liquid supplying device |
| JPH11312649A (ja) | 1998-04-30 | 1999-11-09 | Nippon Asm Kk | Cvd装置 |
| JP2004031782A (ja) | 2002-06-27 | 2004-01-29 | Sumitomo Chem Co Ltd | 有機金属ガス供給装置 |
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US20040093938A1 (en) | 2002-11-15 | 2004-05-20 | Chung-Te Tsai | Liquid in pipeline and liquid level detection and warning system |
| DE10307672A1 (de) | 2003-02-21 | 2004-09-09 | Krohne Meßtechnik GmbH & Co KG | Verfahren zum Abfüllen eines flüssigen oder schüttbaren Mediums in ein Behältnis |
| JP2005056918A (ja) * | 2003-08-06 | 2005-03-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US7608300B2 (en) * | 2003-08-27 | 2009-10-27 | Applied Materials, Inc. | Methods and devices to reduce defects in dielectric stack structures |
| US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| US20050260354A1 (en) * | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
| JP5264039B2 (ja) * | 2004-08-10 | 2013-08-14 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成方法 |
| TW200625431A (en) * | 2004-08-16 | 2006-07-16 | Aviza Tech Inc | Direct liquid injection system and method for forming multi-component dielectric films |
| JP4626956B2 (ja) * | 2004-10-18 | 2011-02-09 | 東京エレクトロン株式会社 | 半導体製造装置、液量監視装置、半導体製造装置の液体材料監視方法、及び、液量監視方法 |
| US20060121192A1 (en) | 2004-12-02 | 2006-06-08 | Jurcik Benjamin J | Liquid precursor refill system |
| US7485338B2 (en) * | 2005-03-31 | 2009-02-03 | Tokyo Electron Limited | Method for precursor delivery |
| US7562672B2 (en) * | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
| US8951478B2 (en) | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
| US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
| EP2094406B1 (en) * | 2006-11-22 | 2015-10-14 | Soitec | Method, apparatus and gate valve assembly for forming monocrystalline group iii-v semiconductor material |
| KR100855582B1 (ko) | 2007-01-12 | 2008-09-03 | 삼성전자주식회사 | 액 공급 장치 및 방법, 상기 장치를 가지는 기판 처리설비, 그리고 기판 처리 방법 |
| JP5305328B2 (ja) * | 2007-06-07 | 2013-10-02 | 株式会社日立国際電気 | 基板処理装置 |
| EP2011898B1 (en) | 2007-07-03 | 2021-04-07 | Beneq Oy | Method in depositing metal oxide materials |
| US7823436B2 (en) | 2008-01-18 | 2010-11-02 | Pivotal Systems Corporation | Method and apparatus for in situ testing of gas flow controllers |
| US20090214777A1 (en) * | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
| US8394454B2 (en) | 2008-03-08 | 2013-03-12 | Omniprobe, Inc. | Method and apparatus for precursor delivery system for irradiation beam instruments |
| JP4418001B2 (ja) * | 2008-03-12 | 2010-02-17 | 三井造船株式会社 | 原料供給装置 |
| US20090255466A1 (en) | 2008-04-11 | 2009-10-15 | Peck John D | Reagent dispensing apparatus and delivery method |
| US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
| US8235364B2 (en) | 2008-11-11 | 2012-08-07 | Praxair Technology, Inc. | Reagent dispensing apparatuses and delivery methods |
| WO2010083510A1 (en) | 2009-01-16 | 2010-07-22 | Veeco Instruments, Inc. | Composition and method for low temperature deposition of ruthenium |
| WO2010135250A2 (en) | 2009-05-22 | 2010-11-25 | Applied Materials, Inc. | Methods for determining the quantity of precursor in an ampoule |
| US9028924B2 (en) * | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
| US8728956B2 (en) * | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| CN103688339B (zh) | 2011-07-22 | 2016-09-28 | 应用材料公司 | 用于ald/cvd工艺的反应物输送系统 |
| CN103041954A (zh) | 2011-10-13 | 2013-04-17 | 北大方正集团有限公司 | 一种用于旋涂设备的液位报警系统 |
| US20130196078A1 (en) * | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Multi-Chamber Substrate Processing System |
| US8728955B2 (en) * | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| JP2015190035A (ja) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法 |
| KR102387359B1 (ko) | 2014-04-18 | 2022-04-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 자동-리필 앰풀 및 사용 방법들 |
| US10094018B2 (en) | 2014-10-16 | 2018-10-09 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
| US20160052651A1 (en) * | 2014-08-22 | 2016-02-25 | Lam Research Corporation | Fill on demand ampoule |
| US11072860B2 (en) | 2014-08-22 | 2021-07-27 | Lam Research Corporation | Fill on demand ampoule refill |
| US9460915B2 (en) * | 2014-09-12 | 2016-10-04 | Lam Research Corporation | Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges |
| US9613818B2 (en) * | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
-
2015
- 2015-10-30 US US14/929,073 patent/US10094018B2/en active Active
-
2016
- 2016-09-26 SG SG10201608005WA patent/SG10201608005WA/en unknown
- 2016-09-26 SG SG10202003055WA patent/SG10202003055WA/en unknown
- 2016-09-29 CN CN201610865153.1A patent/CN107068585B/zh active Active
- 2016-09-29 CN CN202010730406.0A patent/CN112086381B/zh active Active
- 2016-09-30 JP JP2016192428A patent/JP6804920B2/ja active Active
- 2016-09-30 KR KR1020160126354A patent/KR102697645B1/ko active Active
- 2016-09-30 TW TW105131453A patent/TWI737630B/zh active
-
2018
- 2018-09-20 US US16/137,329 patent/US11180850B2/en active Active
-
2024
- 2024-08-19 KR KR1020240110248A patent/KR20240129145A/ko active Pending
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