SG10201608005WA - Dynamic precursor dosing for atomic layer deposition - Google Patents
Dynamic precursor dosing for atomic layer depositionInfo
- Publication number
- SG10201608005WA SG10201608005WA SG10201608005WA SG10201608005WA SG10201608005WA SG 10201608005W A SG10201608005W A SG 10201608005WA SG 10201608005W A SG10201608005W A SG 10201608005WA SG 10201608005W A SG10201608005W A SG 10201608005WA SG 10201608005W A SG10201608005W A SG 10201608005WA
- Authority
- SG
- Singapore
- Prior art keywords
- layer deposition
- atomic layer
- precursor dosing
- dynamic
- dynamic precursor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562236780P | 2015-10-02 | 2015-10-02 | |
US14/929,073 US10094018B2 (en) | 2014-10-16 | 2015-10-30 | Dynamic precursor dosing for atomic layer deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201608005WA true SG10201608005WA (en) | 2017-05-30 |
Family
ID=58446674
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202003055WA SG10202003055WA (en) | 2015-10-02 | 2016-09-26 | Dynamic precursor dosing for atomic layer deposition |
SG10201608005WA SG10201608005WA (en) | 2015-10-02 | 2016-09-26 | Dynamic precursor dosing for atomic layer deposition |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202003055WA SG10202003055WA (en) | 2015-10-02 | 2016-09-26 | Dynamic precursor dosing for atomic layer deposition |
Country Status (6)
Country | Link |
---|---|
US (2) | US10094018B2 (en) |
JP (1) | JP6804920B2 (en) |
KR (1) | KR20170044016A (en) |
CN (2) | CN107068585B (en) |
SG (2) | SG10202003055WA (en) |
TW (1) | TWI737630B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11970772B2 (en) | 2014-08-22 | 2024-04-30 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
US10094018B2 (en) | 2014-10-16 | 2018-10-09 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
US11072860B2 (en) | 2014-08-22 | 2021-07-27 | Lam Research Corporation | Fill on demand ampoule refill |
US11393703B2 (en) | 2018-06-18 | 2022-07-19 | Applied Materials, Inc. | Apparatus and method for controlling a flow process material to a deposition chamber |
TWI821363B (en) * | 2018-08-31 | 2023-11-11 | 美商應用材料股份有限公司 | Precursor delivery system |
CN109881180B (en) * | 2019-01-31 | 2020-07-07 | 华中科技大学 | Rapid-circulation atomic layer deposition equipment for micro-nano particles |
KR20210026898A (en) | 2019-09-02 | 2021-03-10 | 삼성전자주식회사 | Gas supply layer deposition method and layer deposition apparatus |
JP6857760B2 (en) * | 2020-02-18 | 2021-04-14 | 株式会社Kokusai Electric | Semiconductor device manufacturing methods, substrate processing devices, and programs |
US11566327B2 (en) | 2020-11-20 | 2023-01-31 | Applied Materials, Inc. | Methods and apparatus to reduce pressure fluctuations in an ampoule of a chemical delivery system |
US11487304B2 (en) * | 2021-01-08 | 2022-11-01 | Applied Materials, Inc. | Process fluid path switching in recipe operations |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1813318C3 (en) | 1968-12-07 | 1974-01-03 | Alexander 2000 Hamburg Kueckens | Time-controlled dosing device for liquid media from solid and elastic containers |
JPS63136614A (en) | 1986-11-28 | 1988-06-08 | Hitachi Ltd | Processor |
JP3250111B2 (en) | 1992-06-16 | 2002-01-28 | 株式会社日立製作所 | Magneto-optical disk drive |
US5465766A (en) | 1993-04-28 | 1995-11-14 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
JP3380610B2 (en) * | 1993-11-30 | 2003-02-24 | 株式会社サムコインターナショナル研究所 | Liquid source CVD equipment |
US5944940A (en) | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
TW535216B (en) | 1996-09-13 | 2003-06-01 | Tokyo Electron Ltd | Photoresist processing method and photoresist processing system |
TW382749B (en) | 1996-12-24 | 2000-02-21 | Tokyo Electron Ltd | Liquid supplying device |
JPH11312649A (en) | 1998-04-30 | 1999-11-09 | Nippon Asm Kk | Cvd device |
JP2004031782A (en) | 2002-06-27 | 2004-01-29 | Sumitomo Chem Co Ltd | Organic metal gas supply device |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US20040093938A1 (en) | 2002-11-15 | 2004-05-20 | Chung-Te Tsai | Liquid in pipeline and liquid level detection and warning system |
DE10307672A1 (en) | 2003-02-21 | 2004-09-09 | Krohne Meßtechnik GmbH & Co KG | Process for filling a liquid or pourable medium into a container |
JP2005056918A (en) * | 2003-08-06 | 2005-03-03 | Hitachi Kokusai Electric Inc | Substrate treatment system |
US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
JP5264039B2 (en) * | 2004-08-10 | 2013-08-14 | 東京エレクトロン株式会社 | Thin film forming apparatus and thin film forming method |
JP4626956B2 (en) * | 2004-10-18 | 2011-02-09 | 東京エレクトロン株式会社 | Semiconductor manufacturing apparatus, liquid quantity monitoring apparatus, liquid material monitoring method for semiconductor manufacturing apparatus, and liquid quantity monitoring method |
US20060121192A1 (en) | 2004-12-02 | 2006-06-08 | Jurcik Benjamin J | Liquid precursor refill system |
US7485338B2 (en) * | 2005-03-31 | 2009-02-03 | Tokyo Electron Limited | Method for precursor delivery |
US7562672B2 (en) * | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
US8951478B2 (en) | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
KR101390425B1 (en) * | 2006-11-22 | 2014-05-19 | 소이텍 | Temperature-controlled Purge gate valve for Chemical Vapor Deposition Chamber |
KR100855582B1 (en) | 2007-01-12 | 2008-09-03 | 삼성전자주식회사 | Liquid supplying unit and method, facility for treating substrates with the unit, and method for treating substrates |
JP5305328B2 (en) | 2007-06-07 | 2013-10-02 | 株式会社日立国際電気 | Substrate processing equipment |
EP2011898B1 (en) | 2007-07-03 | 2021-04-07 | Beneq Oy | Method in depositing metal oxide materials |
WO2009091935A1 (en) | 2008-01-18 | 2009-07-23 | Pivotal Systems Corporation | Method and apparatus for in situ testing of gas flow controllers |
US20090214777A1 (en) * | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
US8394454B2 (en) | 2008-03-08 | 2013-03-12 | Omniprobe, Inc. | Method and apparatus for precursor delivery system for irradiation beam instruments |
JP4418001B2 (en) * | 2008-03-12 | 2010-02-17 | 三井造船株式会社 | Raw material supply equipment |
US20090255466A1 (en) | 2008-04-11 | 2009-10-15 | Peck John D | Reagent dispensing apparatus and delivery method |
US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
US8235364B2 (en) | 2008-11-11 | 2012-08-07 | Praxair Technology, Inc. | Reagent dispensing apparatuses and delivery methods |
JP2012515842A (en) * | 2009-01-16 | 2012-07-12 | ビーコ・インスツルメンツ・インコーポレーテッド | Compositions and methods for low temperature deposition of ruthenium |
WO2010135250A2 (en) | 2009-05-22 | 2010-11-25 | Applied Materials, Inc. | Methods for determining the quantity of precursor in an ampoule |
US9028924B2 (en) * | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US20110256734A1 (en) * | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
KR102245759B1 (en) | 2011-07-22 | 2021-04-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Reactant delivery system for ald/cvd processes |
CN103041954A (en) | 2011-10-13 | 2013-04-17 | 北大方正集团有限公司 | Liquid level alarm system for spin coating equipment |
US20130196078A1 (en) | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Multi-Chamber Substrate Processing System |
US8728955B2 (en) * | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
JP2015190035A (en) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | Gas supply mechanism and gas supply method, and film deposition apparatus and film deposition method using the same |
KR102387359B1 (en) | 2014-04-18 | 2022-04-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Auto-refill ampoule and methods of use |
US10094018B2 (en) | 2014-10-16 | 2018-10-09 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
US11072860B2 (en) | 2014-08-22 | 2021-07-27 | Lam Research Corporation | Fill on demand ampoule refill |
US20160052651A1 (en) * | 2014-08-22 | 2016-02-25 | Lam Research Corporation | Fill on demand ampoule |
US9460915B2 (en) * | 2014-09-12 | 2016-10-04 | Lam Research Corporation | Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges |
US9613818B2 (en) * | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
-
2015
- 2015-10-30 US US14/929,073 patent/US10094018B2/en active Active
-
2016
- 2016-09-26 SG SG10202003055WA patent/SG10202003055WA/en unknown
- 2016-09-26 SG SG10201608005WA patent/SG10201608005WA/en unknown
- 2016-09-29 CN CN201610865153.1A patent/CN107068585B/en active Active
- 2016-09-29 CN CN202010730406.0A patent/CN112086381A/en active Pending
- 2016-09-30 KR KR1020160126354A patent/KR20170044016A/en not_active Application Discontinuation
- 2016-09-30 TW TW105131453A patent/TWI737630B/en active
- 2016-09-30 JP JP2016192428A patent/JP6804920B2/en active Active
-
2018
- 2018-09-20 US US16/137,329 patent/US11180850B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
SG10202003055WA (en) | 2020-05-28 |
US10094018B2 (en) | 2018-10-09 |
US20190024233A1 (en) | 2019-01-24 |
TW201720951A (en) | 2017-06-16 |
TWI737630B (en) | 2021-09-01 |
KR20170044016A (en) | 2017-04-24 |
US11180850B2 (en) | 2021-11-23 |
CN112086381A (en) | 2020-12-15 |
US20170096735A1 (en) | 2017-04-06 |
CN107068585A (en) | 2017-08-18 |
CN107068585B (en) | 2020-08-25 |
JP6804920B2 (en) | 2020-12-23 |
US20170362705A9 (en) | 2017-12-21 |
JP2017085088A (en) | 2017-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10202003055WA (en) | Dynamic precursor dosing for atomic layer deposition | |
SG10201606450VA (en) | Atomic layer etching of tungsten for enhanced tungsten deposition fill | |
HK1219064A1 (en) | Drug coating layer | |
SG11201702258TA (en) | Atomic layer deposition chamber with thermal lid | |
IL263251A (en) | Material deposition system for additive manufacturing | |
GB2511443B (en) | Atomic layer deposition | |
PT3052140T (en) | Non-self-adherent coating materials | |
ZA201802569B (en) | Polypropylene composition for a layer element | |
SG10201606973YA (en) | Plasma-enhanced atomic layer deposition system with rotary reactor tube | |
SG10201501150YA (en) | Electroless deposition of continuous platinum layer | |
SG11202005302SA (en) | Selective atomic layer deposition of ruthenium | |
SG10201607942YA (en) | High-throughput multichamber atomic layer deposition systems and methods | |
IL247462A0 (en) | Atomic layer deposition of germanium or germanium oxide | |
SG10201404675XA (en) | Deposition apparatus | |
HRP20181570T1 (en) | Fgf-18 compound dosing regimen | |
SG11202001592XA (en) | High aspect ratio deposition | |
EP3231007A4 (en) | Atomic layer deposition passivation for via | |
SG11201604623QA (en) | Composition for coating | |
HK1218396A1 (en) | Coating for substrate | |
HUE054863T2 (en) | Deposition system | |
GB201715449D0 (en) | Porous hierarchical substrate | |
EP3325251A4 (en) | Patterned layer deposition | |
SG11201509066UA (en) | Deposition apparatus | |
GB201516757D0 (en) | Layer deposition | |
SG10202102536SA (en) | Particle coating by atomic layer deposition (ald) |