JP5305328B2 - Substrate processing equipment - Google Patents

Abstract

A substrate processing apparatus is provided to uniform the thickness of film to form on the substrate by stabilizing the supply quantity of the evaporation gas of the liquid raw material to the process chamber. A substrate processing apparatus comprises the process chamber(201), the heating unit, and the exhaust unit. The process chamber processes the substrate. The heating unit heats up the substrate. The exhaust unit exhausts the mood within the process chamber. The first liquid raw material tank and the second liquid raw material tank undercurrent the liquid raw material. The first carrier gas supply line supplies the first carrier gas to the first liquid raw material tank. The first material supply line receives the supply of the first carrier gas about the first liquid raw material tank and transmits the liquid raw material of the first liquid raw material tank to the second liquid raw material tank. The second carrier gas supply line supplies the second carrier gas to the second liquid raw material tank. The flow rate control apparatus controls the flow rate of the second carrier gas circulating the second carrier gas supply line middle. The feedback device feeds back the detection result of the flow rate detector in the flow rate control apparatus.

Description

  The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus that processes a substrate using a vaporized gas of a liquid material.

  As an example of this type of substrate processing apparatus, a so-called bubbling apparatus is known in which a carrier gas is supplied to a liquid source tank storing a liquid source and a vaporized gas of the liquid source is supplied to a processing chamber. In this apparatus, the supply amount of vaporized liquid raw material to the processing chamber may be controlled by the supply amount of the carrier gas supplied to the liquid raw material tank. In particular, the supply amount of the carrier gas is installed in the liquid raw material tank. There are times when control is performed based on the detection result of the temperature of the liquid material by the temperature sensor.

  In this case, even though the supply amount of the carrier gas can be controlled, the supply amount of the vaporized gas of the liquid source cannot be actually grasped, so the supply amount of the vaporized gas of the liquid source is directly controlled. However, it is difficult to stabilize the supply amount of the vaporized gas of the liquid raw material to the processing chamber. For this reason, even if the supply of vaporized gas of the liquid raw material becomes unstable due to some cause (clogging of piping due to by-products, etc.), this cannot be detected, and the piping through which vaporized gas circulates is caused. It is assumed that the vaporized gas reliquefies and generates particles, and clogging occurs not only in the piping but also in a gas supply nozzle provided in the processing chamber.

  On the other hand, a temperature sensor (sensing part) for detecting the temperature of the liquid raw material is fixedly installed at a predetermined position of the liquid raw material tank. When the liquid level fluctuates (decreases) according to the amount of liquid raw material used, the liquid raw material The liquid surface temperature cannot be accurately detected. At this time, even if it is attempted to accurately control the supply amount of the carrier gas, the accuracy cannot be increased, so it is difficult to stabilize the supply amount of the vaporized gas of the liquid raw material to the processing chamber, and as a result, it is formed on the substrate. It is impossible to improve the uniformity of the film thickness to be attempted.

  A main object of the present invention is to provide a substrate processing apparatus capable of stabilizing the supply of vaporized gas of a liquid source to a processing chamber.

According to the present invention,
A processing chamber for processing the substrate;
A heating unit for heating the substrate;
An exhaust unit for exhausting the atmosphere in the processing chamber;
A substrate processing apparatus comprising:
A first liquid raw material tank and a second liquid raw material tank for storing the liquid raw material;
A first carrier gas supply line for supplying a first carrier gas to the first liquid source tank;
A first raw material supply line for receiving the supply of the first carrier gas to the first liquid raw material tank and pumping the liquid raw material of the first liquid raw material tank to the second liquid raw material tank;
A second carrier gas supply line for supplying a second carrier gas to the second liquid source tank;
A second raw material supply line that receives the supply of the second carrier gas to the second liquid raw material tank and supplies a vaporized gas of the liquid raw material of the second liquid raw material tank to the processing chamber;
A flow rate control device for controlling the flow rate of the second carrier gas flowing through the second carrier gas supply line;
A flow rate detection device for detecting a flow rate of the vaporized gas flowing in the second raw material supply line;
A feedback device that feeds back a detection result of the flow rate detection device to the flow rate control device;
Have
The second liquid source tank has a smaller internal volume than the first liquid source tank, and the second liquid source tank stores the liquid source required for one process. A processing device is provided.

  According to the present invention, since the feedback device feeds back the detection result of the detection device to the flow rate control device, it is possible to actually grasp the supply amount of the vaporized gas of the liquid source, and the first and second liquid source tanks The supply amount of the inert gas can be accurately controlled regardless of the fluctuation of the liquid level of the liquid material, and the supply amount of the vaporized gas of the liquid material to the processing chamber can be stabilized. Therefore, it is possible to suppress the vaporization gas of the liquid raw material from being reliquefied, generating particles, and clogging from a gas supply nozzle provided in the processing chamber, and forming on the substrate. It is also possible to improve the uniformity of the film thickness.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
The substrate processing apparatus according to the present embodiment is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device integrated circuit (IC). In the following description, a case where a vertical apparatus that performs heat treatment or the like on a substrate is used as an example of the substrate processing apparatus will be described.

  As shown in FIG. 1, in the substrate processing apparatus 101, a cassette 110 containing a wafer 200 as an example of a substrate is used, and the wafer 200 is made of a material such as silicon. The substrate processing apparatus 101 includes a housing 111, and a cassette stage 114 is installed inside the housing 111. The cassette 110 is carried in or out of the cassette stage 114 by an in-factory transfer device (not shown).

  The cassette stage 114 is placed by the in-factory transfer device so that the wafer 200 in the cassette 110 maintains a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward. The cassette stage 114 rotates the cassette 110 clockwise 90 degrees rearward of the casing 111 so that the wafer 200 in the cassette 110 is in a horizontal posture, and the wafer loading / unloading port of the cassette 110 faces the rear of the casing 111. It is configured to be operable.

  A cassette shelf 105 is installed in a substantially central portion of the casing 111 in the front-rear direction, and the cassette shelf 105 is configured to store a plurality of cassettes 110 in a plurality of rows and a plurality of rows. The cassette shelf 105 is provided with a transfer shelf 123 in which the cassette 110 to be transferred by the wafer transfer mechanism 125 is stored.

  A reserve cassette shelf 107 is provided above the cassette stage 114, and is configured to store the cassette 110 in a preliminary manner.

  A cassette carrying device 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette carrying device 118 includes a cassette elevator 118a that can move up and down while holding the cassette 110, and a cassette carrying mechanism 118b as a carrying mechanism. The cassette carrying device 118 is configured to carry the cassette 110 among the cassette stage 114, the cassette shelf 105, and the spare cassette shelf 107 by continuous operation of the cassette elevator 118a and the cassette carrying mechanism 118b.

  A wafer transfer mechanism 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 includes a wafer transfer device 125a that can rotate or linearly move the wafer 200 in the horizontal direction, and a wafer transfer device elevator 125b that moves the wafer transfer device 125a up and down. The wafer transfer device 125 a is provided with a tweezer 125 c for picking up the wafer 200. The wafer transfer device 125 loads (charges) the wafer 200 into the boat 217 using the tweezers 125c as a placement portion of the wafer 200 by continuous operation of the wafer transfer device 125a and the wafer transfer device elevator 125b. ) Or dismounting from the boat 217 (discharging).

  A processing furnace 202 for heat-treating the wafer 200 is provided above the rear portion of the casing 111, and a lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port shutter 147.

  Below the processing furnace 202, a boat elevator 115 that raises and lowers the boat 217 with respect to the processing furnace 202 is provided. An arm 128 is connected to the lifting platform of the boat elevator 115, and a seal cap 219 is horizontally installed on the arm 128. The seal cap 219 is configured to support the boat 217 vertically and to close the lower end portion of the processing furnace 202.

  The boat 217 includes a plurality of holding members, and is configured to hold a plurality of (for example, about 50 to 150) wafers 200 horizontally with the centers thereof aligned in the vertical direction. Yes.

  Above the cassette shelf 105, a clean unit 134a for supplying clean air that is a cleaned atmosphere is installed. The clean unit 134a includes a supply fan and a dustproof filter, and is configured to distribute clean air inside the casing 111.

  A clean unit 134 b that supplies clean air is installed at the left end of the housing 111. The clean unit 134b also includes a supply fan and a dustproof filter, and is configured to distribute clean air in the vicinity of the wafer transfer device 125a, the boat 217, and the like. The clean air is exhausted to the outside of the casing 111 after circulating in the vicinity of the wafer transfer device 125a, the boat 217, and the like.

  Next, main operations of the substrate processing apparatus 101 will be described.

  When the cassette 110 is loaded onto the cassette stage 114 by an in-factory transfer apparatus (not shown), the cassette 110 holds the wafer 200 in a vertical posture on the cassette stage 114, and the wafer loading / unloading port of the cassette 110 is directed upward. It is placed so that it faces. Thereafter, the cassette 110 is placed in a clockwise direction 90 in the clockwise direction behind the housing 111 so that the wafer 200 in the cassette 110 is placed in a horizontal posture by the cassette stage 114 and the wafer loading / unloading port of the cassette 110 faces the rear of the housing 111. ° Rotated.

  Thereafter, the cassette 110 is automatically transported and delivered by the cassette transport device 118 to the designated shelf position of the cassette shelf 105 or the spare cassette shelf 107 and temporarily stored, and then the cassette shelf 105 or the spare cassette shelf. It is transferred from 107 to the transfer shelf 123 by the cassette transfer device 118 or directly transferred to the transfer shelf 123.

  When the cassette 110 is transferred to the transfer shelf 123, the wafer 200 is picked up from the cassette 110 by the tweezer 125c of the wafer transfer device 125a through the wafer loading / unloading port and loaded (charged) into the boat 217. The wafer transfer device 125 a that has delivered the wafer 200 to the boat 217 returns to the cassette 110 and loads the subsequent wafer 110 into the boat 217.

  When a predetermined number of wafers 200 are loaded into the boat 217, the furnace port shutter that closed the lower end of the processing furnace 202 is opened, and the lower end of the processing furnace 202 is opened. Thereafter, the boat 217 holding the wafer group 200 is loaded into the processing furnace 202 by the ascending operation of the boat elevator 115, and the lower part of the processing furnace 202 is closed by the seal cap 219.

  After loading, arbitrary heat treatment is performed on the wafer 200 in the processing furnace 202. After the heat treatment, the wafer 200 and the cassette 110 are carried out of the casing 111 in the reverse procedure described above.

  As shown in FIG. 2, the processing furnace 202 is provided with a heater 207 which is a heating device. Inside the heater 207, a reaction tube 203 is provided as a reaction vessel for processing the wafer 200 as a substrate. A manifold 209 (annular flange) made of stainless steel or the like is engaged with the lower end of the reaction tube 203 via an O-ring 220. The manifold 209 is fixed to a heater base 251 as a holding member. The lower end opening of the manifold 209 is airtightly closed by a seal cap 219 that is a lid through an O-ring 220. In this embodiment, the processing furnace 202 is formed by at least the heater 207, the reaction tube 203, the manifold 209, and the seal cap 219. Furthermore, in this embodiment, the processing chamber 201 is formed by at least the reaction tube 203, the manifold 209, and the seal cap 219.

  A boat 217 is erected on the seal cap 219 via a boat support 218, and the boat support 218 is a holding body that holds the boat 217. The boat 217 is inserted into the processing chamber 201. In the boat 217, a plurality of wafers 200 to be batch-processed are stacked in multiple stages in the vertical direction in FIG. The heater 207 heats the wafer 200 inserted into the processing chamber 201 to a predetermined temperature.

  Three source gas supply pipes 232a, 232b, and 232e for supplying a plurality of types (three types in this embodiment) of source gases are provided in the processing chamber 201. The source gas supply pipes 232a, 232b, and 232e are provided through the lower part of the manifold 209. The source gas supply pipe 232a and the source gas supply pipe 232b join and communicate with one porous nozzle 233a in the processing chamber 201. The two source gas supply pipes 232a and 232b and the multi-hole nozzle 233a form a merging type gas supply nozzle 233 described later.

  The source gas supply pipe 232e communicates with another porous nozzle 234a alone. A single source gas supply pipe 232e and a multi-hole nozzle 234a form a separation type gas supply nozzle 234 described later. In the processing chamber 201, two gas supply nozzles, a merge type gas supply nozzle 233 and a separation type gas supply nozzle 234, are provided.

  The upper part of the merging type gas supply nozzle 233 extends in a region equal to or higher than the decomposition temperature of TMA supplied from the source gas supply pipe 232b in the processing chamber 201. However, the location where the source gas supply pipe 232b merges with the source gas supply pipe 232a in the processing chamber 201 is an area below the decomposition temperature of TMA, which is lower than the temperature of the wafer 200 and the vicinity of the wafer 200. It is an area.

The source gas supply pipe 232a is provided with a mass flow controller 241a that is a flow control means and a valve 243a that is an on-off valve. In this embodiment, the raw material gas (O ₃ ) is supplied from the raw material gas supply pipe 232a to the processing chamber 201 through the merged type gas supply nozzle 233 via the mass flow controller 241a and the valve 243a. An inert gas supply pipe 232d is connected to the downstream side of the valve 243a of the source gas supply pipe 232a, and a valve 254 is provided in the inert gas supply pipe 232d.

  A source gas supply source 300 serving as a source gas supply source is connected to the source gas supply pipe 232b. In the present embodiment, the raw material gas (TMA) is supplied from the raw material gas supply source 300 to the processing chamber 201 through the combined gas supply nozzle 233. The source gas supply pipe 232b is provided with a heater 281 from the source gas supply source 300 (the mass flow controller 344) to the manifold 209, and the source gas supply pipe 232b is kept at 50 to 60 ° C. In this embodiment, a known ribbon heater in which a heater wire is incorporated in a glass cloth is used as the heater 281, and the ribbon heater is wound around the source gas supply pipe 232 b. An inert gas supply pipe 232c is connected to the source gas supply pipe 232b, and a valve 253 is provided in the inert gas supply pipe 232c.

  A source gas supply source 500 serving as a source gas supply source is connected to the source gas supply pipe 232e. In this embodiment, source gas (TEMAH) is supplied from the source gas supply source 500 to the processing chamber 201 through the separation type gas supply nozzle 234. The source gas supply pipe 232e is provided with a heater 282 from the source gas supply source 500 (the mass flow controller 544) to the manifold 209, and the source gas supply pipe 232e is maintained at 130 ° C. In this embodiment, a ribbon heater is used as the heater 282 similarly to the heater 281, and the ribbon heater 282 is wound around the source gas supply pipe 232 e. An inert gas supply pipe 232f is connected to the source gas supply pipe 232e, and a valve 257 is provided in the inert gas supply pipe 232f.

  As shown in FIG. 3, the source gas supply source 300 includes an inert gas supply source 310 that serves as a supply source of an inert gas as a carrier gas, a liquid source tank 320 that stores a liquid source, and a liquid source tank 320. A liquid raw material supply device 330 that supplies the liquid raw material and a liquid raw material tank 340 that receives the supply of the liquid raw material from the liquid raw material tank 320 and stores the liquid raw material are provided.

  One end of an inert gas supply pipe 312 is connected to the inert gas supply source 310, and the other end of the inert gas supply pipe 312 is connected to the liquid source tank 320. The other end of the inert gas supply pipe 312 is immersed in the liquid material in the liquid material tank 320. The inert gas supply pipe 312 is provided with a mass flow controller 314, a valve 316, and a hand valve 318 that control the flow rate of the inert gas.

  One end of a liquid source supply pipe 322 is connected to the liquid source tank 320, and the other end of the liquid source supply pipe 322 is connected to the liquid source tank 340. One end of the liquid source supply pipe 322 is immersed in the liquid source in the liquid source tank 320, and the other end of the liquid source supply pipe 322 is also immersed in the liquid source in the liquid source tank 340. The liquid source supply pipe 322 is provided with a hand valve 324 and a valve 326.

  Between the inert gas supply pipe 312 and the liquid source supply pipe 322, two bypass pipes 400 and 410 are provided for connecting them. One end of the bypass pipe 400 is connected between the mass flow controller 314 of the inert gas supply pipe 312 and the valve 316, and the other end is connected between the hand valve 324 and the valve 326 of the liquid source supply pipe 322. Has been. The bypass pipe 400 is provided with a valve 402. One end of the bypass pipe 410 is connected between the valve 316 and the hand valve 318 of the inert gas supply pipe 312, and the other end is connected between the hand valve 324 and the valve 326 of the liquid source supply pipe 322. Has been. The bypass pipe 410 is provided with a valve 412.

  One end of a liquid source supply pipe 331 is connected to the liquid source supply apparatus 330, and the other end of the liquid source supply pipe 331 is connected to the liquid source tank 320. The liquid source supply pipe 331 is provided with a hand valve 332 and valves 333 and 334. An inert gas supply pipe 335 is connected between the valve 333 and the valve 334 of the liquid source supply pipe 331. The inert gas supply pipe 335 is provided with a hand valve 336 and a valve 337.

  The liquid material tank 320 is provided with a remaining amount monitoring sensor 338 for monitoring the remaining amount of the liquid material. In the raw material gas supply source 300, the liquid raw material is automatically supplied from the liquid raw material supply device 330 to the liquid raw material tank 320 based on the detection result of the remaining amount monitoring sensor 338. A certain amount of liquid raw material is stored.

  The liquid raw material tank 340 has a smaller internal volume than the liquid raw material tank 320, and the liquid raw material storage amount is smaller than that of the liquid raw material tank 320. Specifically, the liquid source tank 340 stores the liquid source required for one batch process.

  One end of a source gas supply pipe 232b is connected to the liquid source tank 340, and the other end of the source gas supply pipe 232b is connected to a porous nozzle 233a. One end of the source gas supply pipe 232b communicates with the upper space of the liquid source tank 340 (not immersed in the liquid source). The raw material gas supply pipe 232b is provided with a mass flow controller 344 and a valve 346. The mass flow controller 344 is a heatable mass flow meter having a high-temperature-resistant flow sensor, a piezo valve, and the like. The mass flow controller 344 detects and controls the flow rate of the vaporized gas of the liquid source flowing through the source gas supply pipe 232b, and heats the vaporized gas. Can be done.

  A source gas exhaust pipe 350 is connected between the mass flow controller 344 and the valve 346 of the source gas supply pipe 232b. The source gas exhaust pipe 350 is provided with valves 352 and 354.

  On the other hand, the source gas supply source 500 has the same configuration as that of the source gas supply source 300. In this embodiment, the reference numerals in parentheses are given to the respective members in FIG. To do.

In the source gas supply source 300, 500, TMA (Al (CH ₃ ) ₃ , trimethylaluminum) is used as an example of the liquid source in the source gas supply source 300, and the liquid source is used in the source gas supply source 500. As an example, TEMAH (Hf [NCH ₃ C ₂ H ₅ ] ₄ , tetrakis (N-ethyl-N-methylamino) hafnium) is used. Both TMA and TEMAH are liquid at room temperature.

  As shown in FIG. 2, a gas exhaust pipe 231 for exhausting gas is connected to the processing chamber 201. The gas exhaust pipe 231 is provided with a valve 243d. The gas exhaust pipe 231 is connected to a vacuum pump 246 which is an exhaust device via a valve 243d, and the internal atmosphere of the processing chamber 201 is evacuated by the operation of the vacuum pump 246. The valve 243d is an open / close valve that can open and close the valve to evacuate / stop the evacuation of the processing chamber 201, and further adjust the valve opening to adjust the pressure.

  A merged type gas supply nozzle 233 and a separation type gas supply nozzle 234 are arranged along the stacking direction of the wafer 200 from the lower part to the upper part of the processing chamber 201. The merged type gas supply nozzle 233 is a nozzle in which the raw material gas supply pipes 232a and 232b merge at the lower part of the processing chamber 201 as described above and communicate with the single porous nozzle 233a.

  The separation type gas supply nozzle 234 is an independent nozzle in which the source gas supply pipe 232e communicates with one porous nozzle 234a at the lower part of the processing chamber 201. A gas supply hole for supplying a plurality of gases is provided in the porous nozzle 233a of the confluence type gas supply nozzle 233, and a gas supply hole for supplying a gas is also provided in the porous nozzle 234a of the separation type gas supply nozzle 234. ing.

  A boat 217 for mounting a plurality of wafers 200 in multiple stages at the same interval is provided at the center of the reaction tube 203. The boat 217 can enter and exit the reaction tube 203 by a boat elevator 115 (see FIG. 1). A boat rotation mechanism 267 for rotating the boat 217 is provided below the boat support 218 to improve processing uniformity. In this embodiment, the boat 217 held by the boat support 218 can be rotated by rotating the boat rotation mechanism 267.

  A controller 280 as a control unit (control means) includes a mass flow controller 241a, a valve 243a, valves 253, 254, and 257, a valve 243d, a heater 207, a vacuum pump 246, a boat rotation mechanism 267, a boat elevator 115, heaters 281, 282, and the like. It is connected to the. In this embodiment, the controller 280 adjusts the flow rate of the mass flow controller 241a, opens / closes the valves 243a, 253, 254, and 257, opens / closes and adjusts the pressure of the valve 243d, adjusts the temperature of the heater 207, and activates the vacuum pump 246. Controls such as stopping, adjusting the rotational speed of the boat rotating mechanism 267, raising and lowering the boat elevator 115, adjusting the temperature of the heaters 281 and 282, and the like are performed.

  Furthermore, the controller 280 is also connected to the source gas supply source 300. Specifically, as shown in FIG. 4, the controller 280 includes a mass flow controller 314, valves 316, 326, 333, 334, 337, 346, 352, 354, 402, 412, liquid raw material supply device 330, remaining amount monitoring sensor 338, mass flow. It is connected to the controller 344. In this embodiment, the controller 280 receives the flow rate adjustment of the mass flow controller 314, the opening / closing operation of the valves 316, 326, 333, 334, 337, 346, 352, 354, 402, 412, and the detection result of the remaining amount monitoring sensor 338. In addition, the liquid raw material supply device 330 is operated and stopped, and the flow rate adjustment of the mass flow controller 344 is controlled. The controller 280 is also connected to each member of the source gas supply source 500, and the control of each member of the source gas supply source 500 is performed in the same manner as the control for the source gas supply source 300.

  Further, the controller 280 monitors the supply amount of the vaporized gas of the liquid raw material by the mass flow controllers 344 and 544, and feeds back the detection result. Specifically, in FIG. 6, the controller 280 inputs the set flow rate SV of the mass flow controllers 344 and 544 to the flow control unit 900. Next, the flow rate control unit 900 transmits the set output SFR to the mass flow controllers 344 and 544 to the mass flow controllers 344 and 544. The change PV of the actual flow rate PFR of the mass flow controllers 344 and 544 is measured by the mass flow meter 901 based on the response characteristic G1 of the flow rate of the mass flow controllers 344 and 544 with respect to the flow rate of the mass flow meter 901. The flow rate control unit 900 adjusts the setting output SFR transmitted to the mass flow controllers 344 and 544 by feedback of the change amount PV of the actual flow rate PFR of the mass flow controllers 344 and 544.

Next, as examples of film formation by the ALD method, a case where an Al ₂ O ₃ film is formed using TMA and O ₃ gas, which is one of the manufacturing processes of a semiconductor device, and a case where HfO is used using TEMAH and O ₃ gas. _The case where _two films are formed will be described.

  ALD (Atomic layer Deposition), one of the CVD (Chemical Vapor Deposition) methods, uses two (or more) source gases used for film formation under certain film formation conditions (temperature, time, etc.). This is a method in which one type is alternately supplied onto the wafer 200, adsorbed in units of one atomic layer, and film formation is performed using a surface reaction.

That is, for example, when forming an Al ₂ O ₃ (aluminum oxide) film, a vaporized gas of TMA (Al (CH ₃ ) ₃ , trimethylaluminum) and an O ₃ (ozone) gas are alternately supplied as source gases. Accordingly, high-quality film formation is possible at a low temperature of 250 to 450 ° C.

On the other hand, in the case of forming an HfO ₂ (hafnium oxide) film, a vaporized gas of TEMAH (Hf [NCH ₃ C ₂ H ₅ ] ₄ , tetrakis (N-ethyl-N-methylamino) hafnium), an O ₃ gas, Is alternately supplied as a source gas, so that a high-quality film can be formed at a low temperature of 150 to 300 ° C.

  Thus, in the ALD method, film formation is performed by alternately supplying a plurality of types of source gases one by one. The film thickness is controlled by the number of source gas supply cycles. For example, assuming that the film formation rate is 1 mm / cycle, when a film of 20 mm is formed, the film forming process is performed 20 cycles.

First, the procedure for forming the Al ₂ O ₃ film will be described.

  A semiconductor silicon wafer 200 to be formed is loaded into a boat 217 and carried into the processing chamber 201. After carrying in, the following four steps are sequentially executed.

(Step 1)
In step 1, O ₃ gas is supplied to the processing chamber 201. Specifically, the valve 243a of the source gas supply pipe 232a and the valve 243d of the gas exhaust pipe 231 are both opened, and the O ₃ gas whose flow rate is adjusted by the mass flow controller 241a is supplied from the source gas supply pipe 232a to the merging type gas supply nozzle 233. The gas exhaust pipe 231 is exhausted while being supplied to the processing chamber 201 from the gas supply hole.

When the O ₃ gas is allowed to flow, the pressure in the processing chamber 201 is maintained within an optimal range of 10 to 100 Pa by appropriately adjusting the valve 243d. The mass flow controller 241a is controlled to set the O ₃ gas supply flow rate to 1 to 10 slm, and the time for exposing the wafer 200 to the O ₃ gas is set to 2 to 120 seconds. At this time, the temperature of the heater 207 is set so that the temperature of the wafer 200 is in an optimum range of 250 to 450 ° C.

At the same time, the open / close valves 253 and 257 may be opened from the inert gas supply pipes 232c and 232f to allow the inert gas to flow. In this case, it is possible to prevent the O ₃ gas from flowing into the TMA side and the TEMAH side. .

At this time, the gases supplied into the processing chamber 201 are only O ₃ gas and an inert gas such as N ₂ and Ar, and there is no TMA or TEMAH. Therefore, the O ₃ gas does not cause a gas phase reaction, and surface reacts (chemical adsorption) with a surface portion such as a base film on the wafer 200.

(Step 2)
In step 2, the valve 243a of the source gas supply pipe 232a is closed to stop the supply of O ₃ gas. The valve 243 d of the gas exhaust pipe 231 is kept open, the processing chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and the O ₃ gas remaining in the processing chamber 201 is removed from the processing chamber 201. At this time, an inert gas such as N ₂ or Ar may be supplied from the source gas supply pipes 232a, 232b, and 232e to the processing chamber 201. In this case, the O ₃ gas remaining in the processing chamber 201 is removed. The effect of eliminating is further enhanced.

(Step 3)
In step 3, TMA vaporized gas is supplied to the processing chamber 201. Specifically, in the source gas supply source 300, the valves 316, 326, 412, 352, and 354 are closed and the valves 402 and 346 are opened (the valve 243d is kept open), and the inert gas is inactivated. The gas is supplied from the gas supply source 310 to the inert gas supply pipe 312. The inert gas flows through the inert gas supply pipe 312, the bypass pipe 400, and the liquid raw material supply pipe 322 to the liquid raw material tank 340 while the flow rate is adjusted by the mass flow controller 314. The liquid source supply pipe 322 in Step 3 functions as an inert gas supply pipe that supplies an inert gas to the liquid source tank 340.

  When the inert gas is supplied to the liquid raw material tank 340, the vaporized gas of TMA flows into the raw material gas supply pipe 232b, and the vaporized gas of the TMA is controlled by the mass flow controller 344 while the flow rate and temperature are controlled. The gas exhaust pipe 231 is exhausted while being supplied to the processing chamber 201 from the gas supply hole of the merge type gas supply nozzle 233.

  When flowing the vaporized gas of TMA, the pressure in the processing chamber 201 is maintained within an optimal range of 10 to 900 Pa by appropriately adjusting the valve 243d. The mass flow controllers 314 and 344 are controlled so that the supply flow rate of the inert gas is 10 slm or less, and the time for supplying the TMA vaporized gas is set to 1 to 4 seconds. Thereafter, the time for exposure to an elevated pressure atmosphere for further adsorption may be set to 0 to 4 seconds.

  In the source gas supply source 300, the detection result of the mass flow controller 344 is output to the controller 280, and the controller 280 monitors the TMA vaporization amount. The monitoring result is fed back from the controller 280 to the mass flow controller 314 to correct the supply flow rate of the inert gas. For example, when the vaporization amount of TMA decreases from a certain value, the supply flow rate of the inert gas is increased.

In step 3 as well, the heater 207 is controlled so that the temperature of the wafer 200 is in the optimum range of 250 to 450 ° C., as in the case of supplying the O ₃ gas. By supplying the vaporized gas of TMA, O ₃ chemically adsorbed on the surface of the wafer 200 and TMA undergo a surface reaction (chemical adsorption), and an Al ₂ O ₃ film is formed on the wafer 200.

At the same time, the inert gas may flow from the inert gas supply pipes 232d and 232f by opening the on-off valves 254 and 257. In this case, the vaporized TMA gas is prevented from flowing into the O ₃ side and the TEMAH side. Can do.

(Step 4)
In Step 4, the supply of the vaporized gas of TMA is stopped by closing the valve 346 and opening the valves 352 and 354, and the processing chamber 201 is evacuated while the valve 243d is kept open, and the TMA remaining in the processing chamber 201 is removed. The vaporized gas of TMA after contributing to film formation is eliminated. At this time, an inert gas such as N ₂ or Ar may be supplied from the source gas supply pipes 232a, 232b, and 232e to the processing chamber 201, and in this case, the vaporized gas of TMA remaining in the processing chamber 201 Thus, the effect of removing the TMA vaporized gas after contributing to the film formation from the processing chamber 201 is further enhanced.

The above steps 1 to 4 are defined as one cycle, and by repeating this cycle a plurality of times, an Al ₂ O ₃ film having a predetermined thickness can be formed on the wafer 200. In this embodiment, since the inside of the processing chamber 201 is exhausted in step 2 to remove the O ₃ gas and then the vaporized gas of TMA is flowed, both do not react on the way to the wafer 200. The supplied vaporized gas of TMA can be effectively reacted only with O ₃ adsorbed on the wafer 200.

When the formation of the Al ₂ O ₃ film is completed, TMA in the liquid source tank 320 is supplied to the liquid source tank 340. Specifically, in the source gas supply source 300, the valves 402, 412, and 346 are closed and the valves 316, 326, 352, and 354 are opened (the valve 243d is kept open), and the inert gas is inactivated. The gas is supplied from the gas supply source 310 to the inert gas supply pipe 312.

The inert gas reaches the liquid source tank 320 from the inert gas supply pipe 312 while the flow rate is adjusted by the mass flow controller 314, and pushes out the TMA in the liquid source tank 320 to the liquid source supply pipe 322. The TMA flows through the liquid source supply pipe 322, is pumped to the liquid source tank 340, and is stored in the liquid source tank 340. As a result, TMA necessary for forming the subsequent Al ₂ O ₃ film is supplied to the liquid source tank 340.

In this embodiment, the liquid raw material tank 340 is supplied with TMA in an amount necessary for one batch process (an amount necessary for forming an Al ₂ O ₃ film having a predetermined film thickness). Each time an Al ₂ O ₃ film having a predetermined thickness is formed, the above replenishment is repeated.

Subsequently, a procedure for forming the HfO ₂ film will be described.

(Step 5)
In step 5, the O ₃ gas is supplied to the processing chamber 201 in the same manner as when the Al ₂ O ₃ film is formed. Specifically, the valve 243a of the source gas supply pipe 232a and the valve 243d of the gas exhaust pipe 231 are both opened, and the O ₃ gas whose flow rate is adjusted by the mass flow controller 241a is supplied from the source gas supply pipe 232a to the merge type gas supply nozzle. The gas exhaust pipe 231 is exhausted while being supplied to the processing chamber 201 through the gas supply hole 233.

When the O ₃ gas is allowed to flow, the pressure in the processing chamber 201 is maintained within an optimal range of 10 to 100 Pa by appropriately adjusting the valve 243d. The supply flow rate of the O ₃ gas controlled by the mass flow controller 241a is 1 to 10 slm, and the time for exposing the wafer 200 to the O ₃ gas is 2 to 120 seconds. At this time, the temperature of the heater 207 is set so that the temperature of the wafer 200 is in an optimum range of 150 to 300 ° C.

At the same time, the open / close valves 257 and 253 may be opened from the inert gas supply pipes 232f and 232c to allow the inert gas to flow. In this case, the O ₃ gas can be prevented from flowing into the TEMAH side and the TMA side. .

At this time, the gas supplied into the processing chamber 201 is only O ₃ gas and inert gas such as N ₂ and Ar, and there is no TEMAH or TMA. Therefore, the O ₃ gas does not cause a gas phase reaction, and surface reacts (chemical adsorption) with a surface portion such as a base film on the wafer 200.

(Step 6)
In step 6, the valve 243a of the raw material gas supply pipe 232a is closed to stop the supply of O ₃ gas. The valve 243 d of the gas exhaust pipe 231 is kept open, the processing chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and the O ₃ gas remaining in the processing chamber 201 is removed from the processing chamber 201. At this time, an inert gas such as N ₂ or Ar may be supplied from the source gas supply pipes 232a, 232e, and 232b to the processing chamber 201, and in this case, the O ₃ gas remaining in the processing chamber 201 is removed. The effect of eliminating is further enhanced.

(Step 7)
In step 7, vaporized TEMAH gas is supplied to the processing chamber 201. Specifically, in the source gas supply source 500, the valves 516, 526, 612, 552, and 554 are closed and the valves 602 and 546 are opened (the valve 243d is kept open), and the inert gas is inactivated. The gas is supplied from the gas supply source 510 to the inert gas supply pipe 512. The inert gas flows through the inert gas supply pipe 512, the bypass pipe 600, and the liquid raw material supply pipe 522 to the liquid raw material tank 540 while the flow rate is adjusted by the mass flow controller 514. The liquid source supply pipe 522 in step 7 functions as an inert gas supply pipe that supplies an inert gas to the liquid source tank 540.

  When the inert gas is supplied to the liquid source tank 540, the vaporized TEMAH gas flows into the source gas supply pipe 232e, and the vaporized TEMAH gas is supplied to the source gas supply pipe while the flow rate and temperature are controlled by the mass flow controller 544. The gas exhaust pipe 231 is exhausted while being supplied to the processing chamber 201 from the gas supply hole of the separation type gas supply nozzle 234.

  When flowing the vaporized TEMAH gas, the pressure in the processing chamber 201 is maintained within an optimal range of 10 to 100 Pa by appropriately adjusting the valve 243d. The mass flow controllers 514 and 544 are controlled so that the supply flow rate of the inert gas is 10 slm or less, and the time for supplying the TEMAH vaporized gas is set to 1 to 4 seconds. Thereafter, the time for exposure to an elevated pressure atmosphere for further adsorption may be set to 0 to 4 seconds.

  In the source gas supply source 500, the detection result of the mass flow controller 544 is output to the controller 280, and the controller 280 monitors the vaporization amount of TEMAH. The monitoring result is fed back from the controller 280 to the mass flow controller 514 to correct the supply flow rate of the inert gas. For example, when the vaporization amount of TEMAH decreases from a certain value, the supply flow rate of the inert gas is increased.

In step 7 as well, the heater 207 is controlled so that the temperature of the wafer 200 is in the optimum range of 150 to 300 ° C., as in the case of supplying the O ₃ gas. By supplying the vaporized gas of TEMAH, O ₃ chemically adsorbed on the surface of the wafer 200 and TEMAH undergo a surface reaction (chemical adsorption), and an HfO ₂ film is formed on the wafer 200.

At the same time, the inert gas may flow from the inert gas supply pipes 232d and 232c by opening the open / close valves 254 and 253. In this case, the vaporized TEMAH gas is prevented from flowing into the O ₃ side and the TMA side. Can do.

(Step 8)
In step 8, the supply of the TEMAH vaporized gas is stopped by closing the valve 546 and opening the valves 552 and 554, and the processing chamber 201 is evacuated while the valve 243 d remains open, and the TEMAH remaining in the processing chamber 201 is removed. The vaporized gas of TEMAH after contributing to film formation is eliminated. At this time, an inert gas such as N ₂ and Ar may be supplied to the processing chamber 201 from the source gas supply pipes 232a, 232e, and 232b. In this case, the vaporized TEMAH gas remaining in the processing chamber 201 Thus, the effect of removing the TEMAH vaporized gas after contributing to the film formation from the processing chamber 201 is further enhanced.

The above steps 5 to 8 are defined as one cycle, and by repeating this cycle a plurality of times, a HfO ₂ film having a predetermined thickness can be formed on the wafer 200. In this embodiment, since the inside of the processing chamber 201 is evacuated and the O ₃ gas is removed in step 6 and then the TEMAH vaporized gas is flowed, both do not react on the way to the wafer 200. The supplied TEMAH vaporized gas can be effectively reacted only with O ₃ adsorbed on the wafer 200.

When the formation of the HfO ₂ film is completed, TEMAH in the liquid source tank 520 is supplied to the liquid source tank 540. Specifically, in the source gas supply source 500, the valves 602, 612, 546 are closed and the valves 516, 526, 552, 554 are opened (the valve 243d is kept open), and the inert gas is inactivated. The gas is supplied from the gas supply source 510 to the inert gas supply pipe 512. The inert gas reaches the liquid source tank 520 from the inert gas supply pipe 512 while the flow rate of the inert gas is adjusted by the mass flow controller 514, and pushes out TEMAH of the liquid source tank 520 to the liquid source supply pipe 522. The TEMAH flows through the liquid source supply pipe 322, is pumped to the liquid source tank 540, and is stored in the liquid source tank 540. As a result, TEMAH necessary for forming the subsequent HfO ₂ film is supplied to the liquid source tank 540.

In this embodiment, the liquid raw material tank 540 is supplied with TEMAH in an amount necessary for one batch process (an amount necessary for forming an HfO ₂ film having a predetermined thickness). Each time a HfO ₂ film having a thickness is formed, the above-described replenishment is repeated.

As described above, when the Al ₂ O ₃ film is formed, the source gas supply pipes 232a and 232b are merged in the processing chamber 201 so that the vaporized gas of TMA and the O ₃ gas can be combined in the merged gas supply nozzle 233. By alternately adsorbing and reacting, the deposited film can be made of Al ₂ O _3, and when TMA vaporized gas and O ₃ gas are supplied by separate nozzles, there is a possibility of becoming a foreign matter generation source in the TMA nozzle. The problem that an Al film is generated can be solved. Since the Al ₂ O ₃ film has better adhesion than the Al film and is less likely to peel off, it is less likely to become a foreign matter generation source.

Further, when forming the HfO ₂ film, the source gas supply pipes 232a and 232b join in the processing chamber 201 and are supplied with O ₃ gas from the joining type gas supply nozzle 233 which communicates with the single porous nozzle 233a. The source gas supply pipe 232e supplies the TEMAH vaporized gas from the separation-type gas supply nozzle 234 that communicates with the single porous nozzle 243a. As a result, it is possible to avoid an inert gas purge to prevent backflow and entry required when a merged type gas supply nozzle is used when TEMAH is supplied, and a purge that becomes a problem when the merged type gas nozzle is used for supplying TEMAH. The pressure increase in the nozzle due to the can be eliminated. Further, it is possible to prevent the generation of particles due to reliquefaction of TEMAH accompanying the increase in pressure (due to the low vapor pressure of TEMAH).

  In Example 1, the case where film formation is performed by the ALD method using one liquid source for one film type is described, but in the following, the film is formed by the ALD method using three liquid materials. A case where film formation is performed will be described with reference to FIGS. Note that members similar to those in FIG. 3 are denoted by the same reference numerals, and detailed description thereof is omitted. In addition, in order to distinguish each source gas supply source and its constituent members from other source gas supply sources and their constituent members, characters (A, B or C).

For example, when forming a SiO ₂ film using a catalyst, HCD (hexachlorodisilane, Si ₂ Cl ₆ ), H ₂ O, a catalyst (pyridine (C ₅ H ₅ N), etc.) is used as a liquid raw material. Three kinds of liquid source vapors are alternately supplied as source gases.

As an example of the liquid source, the source gas supply source 300A uses HCD, the source gas supply source 300B uses H ₂ O, and the source gas supply source 300C uses a catalyst. HCD, H ₂ O, and catalyst are liquid at room temperature.
Note that the source gas supply sources 300A, 300B, and 300C also have the same configuration as the source gas supply sources 300 and 500. In this embodiment, these members in FIG. 7 are the same as the members in FIG. A reference numeral including a three-digit number is attached and description thereof is omitted.

  When film formation is performed using a plurality of liquid raw materials as in this embodiment, a raw material gas supply source is provided for each liquid raw material.

  In the above embodiment, the supply amount of the vaporized gas of the liquid source by the mass flow controllers 344, 544, 344A, 344B, 344C is monitored by the controller 280, so that even if clogging due to reliquefaction of the vaporized gas of the liquid source occurs. Can be detected. Since the monitoring result is fed back to the mass flow controllers 314, 514, 314A, 314B, and 314C, it is possible to stabilize the supply amount of the vaporized gas of the liquid source by controlling the supply amount of the inert gas. it can.

  In addition to the liquid material tanks 320, 520, 320A, 320B, and 320C, the liquid material tanks 340, 540, 340A, 340B, and 340C smaller in size are provided, so the distance between the liquid material storage source and the processing chamber 201 ( The length of the gas source pipes 232b, 232e, 232A, 232B, and 232C for the vaporized gas of the liquid source can be reduced, and the possibility of generation of particles due to reliquefaction of the vaporized gas can be reduced.

  Further, in addition to the liquid material tanks 320, 520, 320A, 320B, and 320C, liquid material tanks 340, 540, 340A, 340B, and 340C that are smaller and can store liquid materials required for one processing of the wafer 200 are provided. Therefore, it is possible to minimize the storage amount of the direct liquid source required for processing the wafer 200, and to reduce the dependence of the surface temperature of the liquid source on the remaining amount of the source.

  In addition to the liquid source tanks 320, 520, 320A, 320B, and 320C, the liquid source tanks 340, 540, 340A, 340B, and 340C that are smaller in size and capable of storing the liquid source required for one processing of the wafer 200 are provided. It is easy to control the temperature of the liquid raw material.

  Further, in addition to the liquid source tanks 320, 520, 320A, 320B, and 320C, liquid source tanks 340, 540, 340A, 340B, and 340C that are smaller in size and can store the liquid source required for one processing of the wafer 200 are provided. Therefore, since the responsiveness is good and the feedback control is easy, the gas supply amount to the processing chamber 201 can be easily controlled.

  That is, the configuration of FIG. 5 can be assumed as a comparative example of the configurations of FIGS. 3 and 7 according to the present embodiment. In the configuration of the comparative example, liquid source tanks 340, 540, 340A, 340B, 340C and mass flow controllers 344, 544, 344A, 344B, 344C are not provided, and liquid source supply pipes 322, 522, 322A, 322B, The leading end of 322C communicates with the upper space of the liquid source tanks 320, 520, 320A, 320B, and 320C. Then, when the inert gas is caused to flow into the inert gas supply pipes 312, 512, 312A, 312B, 312C, the inert gas reaches the liquid raw material in the liquid raw material tanks 320, 520, 320A, 320B, 320C, and the liquid The raw material vaporized gas reaches the processing chamber 201 through the liquid raw material supply pipes 322, 522, 322A, 322B, 322C and the raw material gas supply pipes 232b, 232e, 232A, 232B, 232C.

  In contrast to the configuration of the comparative example, in this embodiment, mass flow controllers 344, 544, 344A, 344B, and 344C exist in the section from the liquid material tanks 320, 520, 320A, 320B, and 320C to the processing chamber 201. Thus, since the supply amount of the vaporized gas of the liquid source is monitored by the controller 280, it is possible to detect the occurrence of clogging due to reliquefaction of the vaporized gas of the liquid source. Since the monitoring result is fed back to the mass flow controllers 314, 514, 314A, 314B, and 314C, the supply amount of the vaporized gas of the liquid material can be stabilized by controlling the supply amount of the inert gas. it can.

  In contrast to the configuration of the comparative example, in this embodiment, in the section from the liquid source tanks 320, 520, 320A, 320B, 320C to the processing chamber 201, the liquid source tanks 340, 540, 340A, 340B, 340C. Since the vaporized gas of the liquid source is supplied to the processing chamber 201 from there, the supply distance of the vaporized gas is shorter than that of the configuration of the comparative example, and there is a possibility that particles are generated due to reliquefaction of the vaporized gas. Can be reduced. Also, there are mass flow controllers 344, 544, 344A, 344B, 344C that can be heated in the section from the liquid source tanks 340, 340, 340A, 340B, 340C to the processing chamber 201 to heat the vaporized gas of the liquid source. Therefore, the possibility of generating particles due to re-liquefaction of the vaporized gas can be reliably reduced.

  Further, in contrast to the configuration of the comparative example, in this embodiment, in the section from the liquid source tanks 320, 520, 320A, 320B, and 320C to the processing chamber 201, the liquid source tanks 340, 540, 340A, 340B, and 340C are used. The liquid source tanks 340, 340, 340A, 340B, and 340C are smaller than the liquid source tanks 320, 520, 320A, 320B, and 320C, and can store the liquid source required for one processing of the wafer 200. In addition, it is possible to minimize the storage amount of the direct liquid source required for processing the wafer 200, and to reduce the dependence of the surface temperature of the liquid source on the remaining amount of the source.

  As described above, the supply of the vaporized gas of the liquid source to the processing chamber 201 can be stabilized.

  In addition, as a method of vaporizing the liquid raw material and supplying it as a gas raw material to the processing chamber, there is a method using a vaporizer in addition to a bubbling method, but a method using a bubbling method rather than a method using a vaporizer as follows: Is effective. That is, in the case of a vaporizer, since the vaporization amount of the raw material is determined depending on the performance of the vaporizer, if the vaporizer is enlarged to increase the vaporization amount, a remaining amount is generated. In addition, if the carburetor is enlarged, the responsiveness is deteriorated when feedback control is performed. Therefore, the bubbling method is advantageous because it has good response and can be used in a fast cycle.

In this embodiment, the case where the Al ₂ O ₃ film and the HfO ₂ film are formed in the same processing chamber 201 has been described as an example. However, in the processing chamber for the purpose of forming only the HfO ₂ film, It is possible to form a film with a configuration with two separation type gas supply nozzles for supplying a TEMAH vaporized gas and a separation type gas supply nozzle for supplying an O ₃ gas.

Further, the aspect according to the present embodiment can be used not only for the film type of the Al ₂ O ₃ film and the HfO ₂ film but also for other film types formed by vaporizing the liquid raw material by the bubbling method. For example, in a TiN film formed using a titanium raw material such as titanium tetrachloride (TiCl ₄ ) as a liquid raw material, a low-temperature SiCN film formed using tetramethylsilane (4MS) or the like as a liquid raw material, etc. Can be used. At this time, the temperature of the source gas supply pipe is heated to about 40 ° C. for both titanium tetrachloride and tetramethylsilane.

Furthermore, the aspect which concerns on a present Example can be used also about other film | membrane types formed by vaporizing a some liquid raw material with respect to 1 type of film | membrane type. For example, the present invention can also be applied to a cryogenic SiO ₂ film that is formed using HCD, H ₂ O, or a catalyst as a liquid source. At this time, the temperature of the source gas supply pipe for supplying at least the catalyst to the processing chamber is heated to about 75 ° C.

As mentioned above, although the preferable Example of this invention was described, according to the preferable embodiment of this invention,
A processing chamber for processing the substrate;
A heating unit for heating the substrate;
An exhaust unit for exhausting the atmosphere in the processing chamber;
A substrate processing apparatus comprising:
A first liquid raw material tank and a second liquid raw material tank for storing the liquid raw material;
A first carrier gas supply line for supplying a first carrier gas to the first liquid source tank;
A first raw material supply line for receiving the supply of the first carrier gas to the first liquid raw material tank and pumping the liquid raw material of the first liquid raw material tank to the second liquid raw material tank;
A second carrier gas supply line for supplying a second carrier gas to the second liquid source tank;
A second raw material supply line that receives the supply of the second carrier gas to the second liquid raw material tank and supplies a vaporized gas of the liquid raw material of the second liquid raw material tank to the processing chamber;
A flow rate control device for controlling the flow rate of the second carrier gas flowing through the second carrier gas supply line;
A flow rate detection device for detecting a flow rate of the vaporized gas flowing in the second raw material supply line;
A feedback device that feeds back a detection result of the flow rate detection device to the flow rate control device;
Have
The second liquid raw material tank has a smaller internal volume than the first liquid raw material tank, and the second liquid raw material tank stores the liquid raw material required for one process. Is provided.

Preferably, in the first substrate processing apparatus, a control unit,
A liquid raw material supply device for supplying the liquid raw material to the first liquid raw material tank;
A remaining amount detection device that is provided in the first liquid source tank and monitors the remaining amount of the liquid source in the first liquid source tank;
Have
The control unit is configured so that the liquid source is always stored in the first liquid source tank in the first liquid source tank based on the detection result obtained by the remaining amount detection device. There is provided a second substrate processing apparatus for controlling the liquid source supply device so as to supply the liquid source to the liquid source tank.

  Preferably, in the first substrate processing apparatus, the control unit controls the heating unit to heat a gas supply pipe connecting the processing chamber and the second liquid source tank at a predetermined temperature. A third substrate processing apparatus is provided.

  Still preferably, in a third substrate processing apparatus, a fourth substrate processing apparatus is provided in which a heating temperature of the gas supply pipe is different depending on a type of the liquid raw material.

Still preferably, in the substrate processing apparatus according to the first aspect, the fifth substrate processing apparatus is provided, wherein the liquid material is any one of TEMAH, TMA, TiCl ₄ , 4MS, HCD, H ₂ O, and pyridine. Is done.

Still preferably, in the first substrate processing apparatus,
The second carrier gas supply line includes a bypass line connecting the first carrier gas supply line and the first raw material supply line,
The first and second carrier gases are gases supplied from the same gas source,
A sixth substrate processing apparatus is provided in which the second carrier gas is supplied to the second liquid source tank via the bypass line without passing through the first liquid source tank.

1 is a perspective view showing a schematic configuration of a substrate processing apparatus according to a preferred embodiment of the present invention. It is a schematic block diagram of the vertical processing furnace used in the preferable Example of this invention, and its accompanying member, It is the longitudinal cross-sectional view which cut | disconnected the processing furnace part especially in the vertical direction. It is a schematic block diagram of the source gas supply source which concerns on the preferable Example of this invention. It is a block diagram which shows the schematic circuit structure of the source gas supply source which concerns on the preferable Example of this invention. It is a schematic block diagram which shows the comparative example of the source gas supply source of FIG. It is a block diagram which shows the feedback control in a controller. It is a schematic block diagram of the source gas supply source which concerns on another preferable Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Substrate processing apparatus 105 Cassette shelf 107 Reserve cassette shelf 110 Cassette 111 Case 114 Cassette stage 115 Boat elevator 118 Cassette transfer device 118a Cassette elevator 118b Cassette transfer mechanism 123 Transfer shelf 125 Wafer transfer mechanism 125a Wafer transfer device 125b Wafer transfer Loading device elevator 125c tweezer 128 arm 134a, 134b clean unit 147 furnace port shutter 200 wafer 201 processing chamber 202 processing furnace 203 reaction tube 207 heater 209 manifold 217 boat 218 boat support 219 seal cap 220 O-ring 231 gas exhaust pipe 232a, 232b , 232e, 232A to 232C Raw material gas supply pipe 232c, 232d, 232f Inert gas supply pipe 23 3 Combined type gas supply nozzle 233a Perforated nozzle 234 Separation type gas supply nozzle 234a Perforated nozzle 241a Mass flow controller 243a, 253, 254, 257 Valve 243d Valve 251 Heater base 280 Controller 281, 282 Heater 300, 500, 300A to 300C Source gas supply Source 310, 510, 310A to 310C Inert gas supply source 312, 512, 312A to 312C Inert gas supply pipe 314, 514, 314A to 314C Mass flow controller 316, 516, 316A to 316C Valve 318, 518, 318A to 318C Hand Valves 320, 520, 320A to 320C Liquid material tanks 322, 522, 322A to 322C Liquid material supply pipes 324, 524, 324A to 324C Hand valve 3 6, 526, 326A to 326C Valve 330, 530, 330A to 330C Liquid material supply device 331, 531, 331A to 331C Liquid material supply pipe 332, 532, 332A to 332C Hand valve 333, 334, 533, 534, 333A to 333C Valve 335, 535, 335A to 335C Inert gas supply pipe 336, 536, 336A to 336C Hand valve 337, 537, 337A to 337C Valve 338, 538, 338A to 338C Remaining amount monitoring sensor 340, 540, 340A to 340C Liquid raw material Tank 344, 544, 344A to 344C Mass flow controller 346, 546, 346A to 346C Valve 350, 550, 350A to 350C Source gas exhaust pipe 352, 354, 552, 554, 352A to 352C Valve 400, 410, 00,610,400A~400C bypass pipe 402,412,602,612 valve 402A~402C, 412A~412C valve

Claims (6)

A processing chamber for processing the substrate;
A first liquid raw material tank and a second liquid raw material tank for storing the liquid raw material;
A first carrier gas supply line for supplying a first carrier gas to the first liquid source tank;
A first raw material supply line that receives the supply of the first carrier gas to the first liquid raw material tank and pumps the liquid raw material of the first liquid raw material tank to the second liquid raw material tank;
A second carrier gas supply line for supplying a second carrier gas to the second liquid source tank;
A second raw material supply line that receives supply of the second carrier gas to the second liquid raw material tank and supplies vaporized gas of the liquid raw material of the second liquid raw material tank to the processing chamber;
A flow rate control device for controlling the flow rate of the second carrier gas flowing through the second carrier gas supply line;
A flow rate detection device for detecting a flow rate of the vaporized gas flowing through the second raw material supply line;
A feedback device that feeds back a detection result of the flow rate detection device to the flow rate control device;
Have
The second liquid raw material tank has a smaller internal volume than the first liquid raw material tank, and the second liquid raw material tank contains the liquid raw material required from when the substrate is carried into the processing chamber to when it is carried out. A substrate processing apparatus to be stored. The substrate processing apparatus according to claim 1 , further comprising a control unit;
A liquid raw material supply device for supplying the liquid raw material to the first liquid raw material tank;
A remaining amount detector that is provided in the first liquid source tank and monitors the remaining amount of the liquid source in the first liquid source tank;
Have
The controller controls the first from the liquid material supply device so that the liquid material is always stored in the first liquid material tank in a predetermined amount based on the detection result obtained by the remaining amount detection device. A substrate processing apparatus for controlling the liquid source supply device so as to supply the liquid source to the liquid source tank. The substrate processing apparatus according to any one of claims 1 to 2, further comprising a gas supply pipe heating unit and control unit,
The control unit is a substrate processing apparatus configured to control the gas supply pipe heating unit to heat a gas supply pipe connecting the processing chamber and the second liquid raw material tank at a predetermined temperature. A substrate processing apparatus according to any one of claims 1 to 3 ,
The first and second carrier gases are gases supplied from the same gas source,
The second carrier gas supply line is a bypass line connecting the first carrier gas supply line and the first raw material supply line, and the second carrier gas is supplied to the first liquid raw material tank. A substrate processing apparatus having a bypass line for supplying to the second liquid source tank without intervention. A processing chamber for processing the substrate;
A first liquid raw material tank and a second liquid raw material tank for storing the liquid raw material;
A first carrier gas supply line for supplying a first carrier gas to the first liquid source tank;
A first raw material supply line that receives the supply of the first carrier gas to the first liquid raw material tank and pumps the liquid raw material of the first liquid raw material tank to the second liquid raw material tank;
A second carrier gas supply line for supplying a second carrier gas to the second liquid source tank;
A second raw material supply line that receives supply of the second carrier gas to the second liquid raw material tank and supplies vaporized gas of the liquid raw material of the second liquid raw material tank to the processing chamber;
A flow rate control device for controlling the flow rate of the second carrier gas flowing through the second carrier gas supply line;
A flow rate detection device for detecting a flow rate of the vaporized gas flowing through the second raw material supply line;
A feedback device that feeds back a detection result of the flow rate detection device to the flow rate control device;
A substrate processing apparatus. Supplying a first carrier gas to the first liquid source tank and pumping the liquid source from the first liquid source tank to the second liquid source tank;
Supplying the second carrier gas to the second liquid source tank to vaporize the liquid source, and supplying the vaporized gas from the second liquid source supply tank to the processing chamber containing the substrate;
A method of manufacturing a semiconductor device , comprising: a feedback step of detecting a flow rate of the vaporized gas and controlling a flow rate of the second carrier gas based on a detection result .