JP2006222265A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of preventing a repeated liquefaction of a liquid raw material when a buffer tank is installed to a liquid-raw-material supplying mechanism. <P>SOLUTION: The substrate processing apparatus comprises the raw mateial supplying mechanisms 42, 12 for supplying at least not less than one raw material to a processing chember 1; a gasification mechanism 40 for vaporizing or subliming at least one raw material out of at least not less than one raw material that are a liquid or a solid at room temperature and at normal pressure; the buffer tank 10 provided at the mechanism 42 between the mechanism 40 and the chamber 1, and temporarily storing the gasified raw material; and a heating mechanism 50 for heating the buffer tank. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus for forming a film on a semiconductor substrate.

  As a method for forming a film on a semiconductor substrate, there is a method called ALD (Atomic Layer Deposition). This is because, under certain film formation conditions (temperature, time, etc.), two (or more) source gases used for film formation are alternately supplied onto the substrate and adsorbed in units of one atomic layer to cause surface reaction. This is a technique for forming a film by using the film.

  When a film is grown on the substrate by exposing the substrate to an alternating surface reaction of gas phase reactants, the faster the adsorption of each raw material to the substrate surface, the less time it takes to form the film, and the productivity is improved. In general, the amount of adsorption is proportional to pressure × time. Assuming that the amount corresponding to pressure × time is L, even if the pressure is high, even if the time is short, the same amount can be adsorbed if L is equal. That is, if the pressure in the reaction furnace is rapidly increased, the raw material can be adsorbed in a short time. As a method for increasing the pressure in the reaction furnace, it is conceivable to rapidly supply the raw material.

In order to supply raw materials rapidly, a method is proposed in which a buffer tank is installed in the middle of the supply pipe for supplying raw materials to the processing chamber, and the raw material is filled in the buffer tank before being supplied to the processing chamber, and then the reaction chamber is supplied. (See JP 2004-6801 A).
See Japanese Patent Application Laid-Open No. 2004-6801

  An example of film formation by the ALD method using two raw materials A and B and using a buffer tank in the middle of one gas supply pipe will be described.

A buffer tank is provided in the middle of the gas A supply pipe for supplying gas A to the processing chamber, and opening / closing valves are provided before and after the buffer tank. An open / close valve is also provided in the middle of the gas B supply pipe. A procedure example of ALD film formation is shown below.
1) Supply of gas B The gas B is supplied to the processing chamber by opening an on-off valve in the middle of the gas B supply pipe. Meanwhile, the opening / closing valve on the upstream side of the buffer tank is opened to fill the buffer tank with gas A.
2) Vacuuming the processing chamber Close the open / close valve in the middle of the gas B supply pipe and evacuate the processing chamber with a pump. Also close the open / close valve on the upstream side of the buffer tank.
3) Supply of gas A Gas A is supplied to the processing chamber by opening an opening / closing valve on the downstream side of the buffer tank.
4) Vacuuming the processing chamber Close the open / close valve on the downstream side of the buffer tank and vacuum the processing chamber with a pump.

  In the ALD method, steps 1) to 4) are repeated as many times as necessary to form a film on the substrate. By providing the buffer tank, the gas A filled in the buffer tank is supplied to the reaction chamber all at once, so that the supply time of the gas A can be shortened and thus the total processing time can be shortened.

On the other hand, liquid raw materials that are liquid at room temperature are often used as raw materials for semiconductor devices these days. For example, TEMAH [Hf (N (CH ₃ ) (C ₂ H ₅ )} ₄ : tetrakis dimethylamino is one of HfO (hafnium oxide) film materials that are promising as Hi-K (high dielectric constant gate insulating film). In addition, TMA [Al (CH ₃ ) ₃ : trimethylaluminum] is often used as a raw material for the AlO (aluminum oxide) film.

  For example, the vapor pressure of the TEMAH is about 0.5 Pa at a room temperature of 25 ° C. In order to vaporize the liquid and obtain a necessary amount of concentration, for example, a heating mechanism such as a bubbler is provided to heat and vaporize the liquid. It is necessary to take measures such as.

  When a buffer tank is provided in the middle of such a liquid material supply pipe, if the partial pressure of the liquid material in the buffer tank becomes higher than the equilibrium vapor pressure, there is a possibility of re-liquefaction in the buffer tank. is there.

  When the liquid material is reliquefied, it may first become a particle source. Many liquid raw materials undergo a hydrolysis reaction with moisture, and many are solidified. There is a possibility that the raw material liquefied in the buffer tank reacts with moisture in the atmosphere, which causes particles on the substrate.

  Reliquefaction also increases flow rate instability. What is liquefied in the buffer tank due to the partial pressure being higher than the equilibrium vapor pressure is re-vaporized when the valve between the buffer tank and the reaction chamber is opened, for example, because the pressure in the buffer tank decreases. For this reason, the raw material supply amount is not constant every time, which causes fluctuations in film thickness. Liquid liquefaction reduces yield in the production of semiconductor devices.

  As described above, simply providing a buffer tank as in the prior art may cause a problem when a liquid material is used, and countermeasures are required.

  Accordingly, a main object of the present invention is to provide a substrate processing apparatus that can prevent re-liquefaction of a liquid source when a buffer tank is attached to the liquid source supply mechanism.

According to the present invention,
A processing chamber;
A loading / unloading mechanism for loading / unloading at least one substrate into / from the processing chamber;
A raw material supply mechanism for supplying at least one raw material to the processing chamber;
Among the at least one raw material, at least one raw material is liquid or solid at normal temperature and normal pressure, and a gasification mechanism that vaporizes or sublimates the raw material that is liquid or solid at normal temperature and normal pressure,
A buffer tank that is provided in the middle of the raw material supply mechanism between the gasification mechanism and the processing chamber, and temporarily stores the gasified raw material;
There is provided a substrate processing apparatus comprising a heating mechanism for heating the buffer tank.

  ADVANTAGE OF THE INVENTION According to this invention, when a buffer tank is attached to a liquid raw material supply mechanism, the substrate processing apparatus which can prevent reliquefaction of a liquid raw material is provided.

  In a preferred embodiment of the present invention, the buffer tank can be made higher than the reliquefaction temperature of the liquid raw material by attaching a heating mechanism that can be heated to room temperature or higher to the buffer tank. For this reason, the liquid raw material is not reliquefied in the buffer tank, so that the productivity of the semiconductor device is not impaired.

  Next, preferred embodiments of the present invention will be described in more detail with reference to the drawings.

  FIG. 1 is a schematic longitudinal sectional view for explaining a substrate processing apparatus according to a first embodiment of the present invention. This is an example of a semiconductor device manufacturing apparatus that performs film formation by an ALD method using two types of raw materials, liquid material and gas. In this example, the bubbling method is used for heating the liquid material, but there is no difference in the method using a vaporizer or a thermostatic bath.

  The liquid raw material 41 is placed in the liquid raw material tank 40 and heated by a tank heating mechanism (not shown) until the vapor pressure becomes sufficiently high. Usually, it is heated to a temperature at which the vapor pressure is about 1 Torr or higher. By heating, the liquid raw material is supplied as a gas.

  The raw material supply pipe 42 from the liquid raw material tank 40 to the processing chamber 1 is heated by the pipe heater 30 so that the raw material does not liquefy again and adhere to the pipe.

  A buffer tank 10 is provided in the middle of the raw material supply pipe 42, and opening / closing valves 21 and 22 are provided before and after the buffer tank 10. An opening / closing valve 23 is also provided in the middle of the gas B supply pipe 12.

  A buffer tank heating mechanism 50 is attached to the buffer tank 10. The set temperature of the buffer tank heating mechanism 50 is normally a temperature at which the vapor pressure of the liquid source is about 1 Torr or higher and higher than the temperature of the liquid source tank 40.

An example procedure is shown below.
1) Supply of gas B Open / close valve 23 is opened to supply gas B to processing chamber 1. Meanwhile, the opening / closing valves 25, 24, and 21 are opened to fill the buffer tank 10 with the raw material.
2) Vacuuming the processing chamber 1 The on-off valve 23 is closed and the processing chamber 1 is evacuated by the pump 2. Further, the open / close valves 21, 24, 25 are closed.
3) Supply of raw material A The open / close valve 22 is opened to supply the raw material A to the processing chamber 1.
4) Vacuuming the processing chamber 1 The on-off valve 22 is closed and the processing chamber 1 is evacuated by the pump 2.

  By providing the buffer tank heating mechanism 50 that can be heated to room temperature or higher as in this embodiment, the buffer tank 10 can be made higher than the reliquefaction temperature of the liquid raw material. Therefore, the liquid raw material can be prevented from being reliquefied in the buffer tank 10, and the buffer tank can be installed in the raw material pipe even with the liquid raw material. Thereby, the film formation time and the total processing time can be shortened, and the productivity can be increased.

FIG. 2 is a schematic longitudinal sectional view for explaining a substrate processing apparatus for comparison.
This comparative example is different from the first embodiment shown in FIG. 1 in that the buffer tank heating mechanism 50 is not attached, but the other points are the same. The film forming procedure is the same except that the buffer tank 10 is not heated by the buffer tank heating mechanism 50.

  In this comparative example, the liquid material may be reliquefied in the buffer tank 10 when the partial pressure of the liquid material in the buffer tank 10 becomes higher than the equilibrium vapor pressure of the liquid material.

  When the liquid material is reliquefied, it may first become a particle source. Many liquid raw materials undergo a hydrolysis reaction with moisture, and many are solidified. There is a possibility that the raw material liquefied in the buffer tank 10 reacts with moisture in the atmosphere, which causes particles on the substrate.

  Reliquefaction also increases flow rate instability. What has been liquefied in the buffer tank 10 due to the partial pressure higher than the equilibrium vapor pressure, for example, when the valve 22 between the buffer tank 10 and the reaction chamber 1 is opened, the pressure in the buffer tank 10 decreases. Re-vaporize. For this reason, the raw material supply amount is not constant every time, which causes fluctuations in membrane pressure. Liquid liquefaction reduces yield in the production of semiconductor devices.

  FIG. 3 is a schematic configuration diagram of a vertical substrate processing furnace according to the present embodiment, showing a processing furnace portion in a longitudinal section, and FIG. 4 is a schematic configuration diagram of a vertical substrate processing furnace according to the present embodiment. Yes, the processing furnace part is shown in cross section. FIG. 5 is a view for explaining the nozzle 233 of the vertical substrate processing furnace in the substrate processing apparatus of the present embodiment, FIG. 5A is a schematic view, and FIG. 5B is a partially enlarged view of part A of FIG. 3A. is there.

  A reaction tube 203 is provided inside the heater 207 as a heating means as a reaction vessel for processing the wafer 200 as a substrate, and a manifold 209 made of, for example, stainless steel is engaged with the lower end of the reaction tube 203. The lower end opening is hermetically closed by a seal cap 219 as a lid through an O-ring 220 as an airtight member, and at least the heater 207, the reaction tube 203, the manifold 209, and the seal cap 219 form a processing furnace 202. At least the reaction chamber 203, the manifold 209, and the seal cap 219 form a processing chamber 201. The manifold 209 is fixed to holding means (hereinafter referred to as a heater base 251).

  An annular flange is provided at each of the lower end portion of the reaction tube 203 and the upper opening end portion of the manifold 209, and an airtight member (hereinafter referred to as an O-ring 220) is disposed between these flanges. Has been.

  A boat 217 as a substrate holding means is erected on the seal cap 219 via a quartz cap 218, and the quartz cap 218 serves as a holding body for holding the boat 217. Then, the boat 217 is inserted into the processing furnace 202. A plurality of wafers 200 to be batch-processed are stacked on the boat 217 in a horizontal posture in multiple stages in the tube axis direction. The heater 207 heats the wafer 200 inserted into the processing furnace 202 to a predetermined temperature.

  The processing furnace 202 is provided with two gas supply pipes 232a and 232b as supply pipes for supplying a plurality of types, here two types of gases. The gas supply pipes 232a and 232b are provided through the lower portion of the manifold 209, and the gas supply pipe 232b merges with the gas supply pipe 232a in the processing furnace 202, and the two gas supply pipes 232a and 232b. Communicates with a single multi-hole nozzle 233. The nozzle 233 is provided in the processing furnace 202, and its upper portion extends in a region that is equal to or higher than the decomposition temperature of TMA supplied from the gas supply pipe 232b. However, the location where the gas supply pipe 232b merges with the gas supply pipe 232a in the processing furnace 202 is an area below the decomposition temperature of TMA, and is in an area where the temperature is lower than the temperature of the wafer 200 and the vicinity of the wafer 200. is there.

  The TMA that is the liquid raw material 261 is placed in the TMA container 40 that is a liquid raw material tank and heated until the vapor pressure becomes sufficiently high. Usually, it is heated to 20 ° C. at which the vapor pressure of TMA becomes about 10 Torr or more. By heating, TMA is supplied as a gas.

  The gas supply pipe 232b from the TMA container 260 to the processing chamber 201 is heated to 50 to 60 ° C. by the heater 300 so that the TMA raw material is liquefied again and does not adhere to the pipe.

  A buffer tank 310 is provided in the middle of the gas supply pipe 232 b, and valves 255 and 256 are provided before and after the buffer tank 310.

  A buffer tank heating mechanism 301 is attached to the buffer tank 310. The set temperature of the buffer tank heating mechanism 301 is normally set to 20 ° C. or higher, which is a temperature at which the vapor pressure of TMA is about 10 Torr or higher.

A reaction gas (O ₃₎ is supplied from the gas supply pipe 232a to the processing furnace 202 through a mass flow controller 241a serving as a flow control means and a valve 243a serving as an on-off valve, and further through a porous nozzle 233 installed in the processing furnace 202 described later. ) Is supplied.

  From the gas supply pipe 232b, the mass flow controller 241b which is a flow rate control means, the valve 252 which is an on-off valve, the TMA container 260, the valve 255 which is an on-off valve, the buffer tank 310, and the valve 256 which is an on-off valve are described above. Further, the reaction gas (TMA) is supplied to the processing furnace 202 through the perforated nozzle 233.

  An inert gas line 232 c is connected to the gas supply pipe 232 b between the buffer tank 310 and the valve 255 via an open / close valve 253. Further, an inert gas line 232d is connected to the gas supply pipe 232a on the downstream side of the valve 243a via an opening / closing valve 254.

  The processing furnace 202 is connected to a vacuum pump 246 which is an exhaust means through a valve 243d by a gas exhaust pipe 231 which is an exhaust pipe for exhausting gas, and is evacuated. The valve 243d is an open / close valve that can open and close the valve to stop evacuation / evacuation of the processing furnace 202, and further adjust the valve opening to adjust the pressure.

  A nozzle 233 is disposed along the stacking direction of the wafer 200 from the lower part to the upper part of the reaction tube 203. The nozzle 233 is provided with gas supply holes 248b which are supply holes for supplying a plurality of gases.

  A boat 217 for mounting a plurality of wafers 200 in multiple stages at the same interval is provided at the center of the reaction tube 203. The boat 217 can enter and exit the reaction tube 203 by a boat elevator mechanism (not shown). It has become. Further, in order to improve the uniformity of processing, a boat rotation mechanism 267 that is a rotation means for rotating the boat 217 is provided. By rotating the boat rotation mechanism 267, the boat 217 held by the quartz cap 218 is removed. It is designed to rotate.

  The controller 321 as control means includes mass flow controllers 241a and 241b, valves 243a, 252, 250, 243d, 253, 254, 255, 256, heater 207, heater 300, buffer tank heating mechanism 301, vacuum pump 246, and boat rotation mechanism. 267, connected to a boat lifting mechanism not shown in the figure, the flow rate adjustment of the mass flow controllers 241a, 241b, the opening / closing operation of the valves 243a, 252, 250, 253, 254, 255, 256, the opening / closing operation of the valve 243d and the pressure adjustment operation The temperature of the heater 207, the heater 300, and the buffer tank heating mechanism 301 is adjusted, the vacuum pump 246 is started and stopped, the rotation speed of the boat rotating mechanism 267 is adjusted, and the lifting operation of the boat lifting mechanism is controlled.

Next, as an example of film formation by the ALD method, a case where an Al ₂ O ₃ film is formed using TMA and O ₃ gas will be described.

  First, a semiconductor silicon wafer 200 to be formed is loaded into a boat 217 and loaded into a processing furnace 202. After carrying in, the following three steps are sequentially executed.

[Step 1]
In step 1, O ₃ gas is flowed. First, the valve 243a provided in the gas supply pipe 232a and the valve 243d provided in the gas exhaust pipe 231 are both opened, and O ₃ gas whose flow rate is adjusted by the mass flow controller 243a from the gas supply pipe 232a is supplied to the gas supply hole 248b of the nozzle 233. From the gas exhaust pipe 231 while being supplied to the processing furnace 202. When the O ₃ gas is allowed to flow, the pressure in the processing furnace 202 is set to 10 to 100 Pa by appropriately adjusting the valve 243d. The supply flow rate of O ₃ controlled by the mass flow controller 241a is 1000 to 10000 sccm. The time for exposing the wafer 200 to O ₃ is 2 to 120 seconds. The temperature of the heater 207 at this time is set so that the wafer temperature is 250 to 450 ° C.

In this step, while the O ₃ gas is being supplied to the processing furnace 202, the valves 252 and 255 are opened to fill the buffer tank 10 with the TMA gas.
TMA is a liquid at room temperature, and in order to supply it to the processing furnace 202, a method of supplying it after heating and vaporizing, passing an inert gas such as nitrogen or a rare gas called a carrier gas through the TMA container 260, There is a method of supplying the vaporized part to the processing furnace together with the carrier gas, and the latter case will be described as an example. First, the valve 252 provided in the carrier gas supply pipe 232b and the valve 252 provided between the TMA container 260 and the processing furnace 202 are opened, and the carrier gas whose flow rate is adjusted by the mass flow controller 241b from the carrier gas supply pipe 232b is TMA. It passes through the container 260 and is filled into the buffer tank 10 as a mixed gas of TMA and carrier gas.

At this time, the gases flowing into the processing furnace 202 are only inert gases such as O ₃ , N ₂ , and Ar, and there is no TMA. Therefore, O ₃ does not cause a gas phase reaction, and reacts with the underlying film on the wafer 200.

[Step 2]
In step 2, the valve 243a of the gas supply pipe 232a is closed to stop the supply of O ₃ . Further, the valve 243 d of the gas exhaust pipe 231 is kept open, and the processing furnace 202 is exhausted to 20 Pa or less by the vacuum pump 246, and residual O ₃ is removed from the processing furnace 202. Further, the valves 252 and 255 are closed. At this time, if an inert gas such as N ₂ is supplied to the processing furnace 202 from the gas supply pipe 232a, which is an O ₃ supply line, the effect of eliminating residual O ₃ is further enhanced.

[Step 3]
In step 3, the valve 256 provided in the gas supply pipe 232b is opened to supply TMA gas into the processing furnace 202 at once. The wafer temperature at this time is 250 to 450 ° C. as in the case of supplying O ₃ . By supplying TMA, O ₃ on the base film and TMA react with each other to form an Al ₂ O ₃ film on the wafer 200.

After the film formation, the valve 243d is opened to evacuate the processing furnace 202, and the gas after contributing to the film formation of the remaining TMA is removed. At this time, if an inert gas such as N ₂ is supplied to the processing furnace 202 from the gas supply pipe 232a which is an O ₃ supply line and the gas supply pipe 232b which is a TMA supply line, respectively, the remaining TMA is deposited. The effect of removing the contributed gas from the processing furnace 202 is enhanced.

Steps 1 to 3 are defined as one cycle, and this cycle is repeated a plurality of times to form an Al ₂ O ₃ film having a predetermined thickness on the wafer 200.

  By providing the buffer tank heating mechanism 301 that can be heated to room temperature or higher as in this embodiment, the buffer tank 310 can be made higher than the reliquefaction temperature of TMA that is a liquid raw material. Therefore, TMA can be prevented from being reliquefied in the buffer tank 310, and the buffer tank can be installed in the raw material piping even when TMA which is a liquid raw material is used. Thereby, the film formation time and the total processing time can be shortened, and the productivity can be increased.

In addition, since the inside of the processing furnace 202 is exhausted and the O ₃ gas is removed, TMA is flown, so that they do not react on the way to the wafer 200. The supplied TMA can effectively react only with O ₃ adsorbed on the wafer 200.

Further, the gas supply pipe 232a which is an O ₃ supply line and the gas supply pipe 232b which is a TMA supply line are merged in the processing furnace 202, whereby TMA and O ₃ are alternately adsorbed and reacted in the nozzle 233 and deposited. The film can be made of Al ₂ O _3, and when TMA and O ₃ are supplied by separate nozzles, the problem of generating an Al film that can become a foreign matter generation source in the TMA nozzle can be eliminated. it can. Since the Al ₂ O ₃ film has better adhesion than the Al film and is less likely to peel off, it is less likely to become a foreign matter generation source.

  Next, an outline of a semiconductor manufacturing apparatus which is an example of a substrate processing apparatus to which the present invention is suitably applied will be described with reference to FIG.

  A cassette stage 105 is provided on the front side of the inside of the housing 101 as a holder transfer member that transfers the cassette 100 as a substrate storage container to and from an external transfer device (not shown). Is provided with a cassette elevator 115 as an elevating means, and a cassette transfer machine 114 as a conveying means is attached to the cassette elevator 115. Further, a cassette shelf 109 as a means for placing the cassette 100 is provided on the rear side of the cassette elevator 115, and a spare cassette shelf 110 is also provided above the cassette stage 105. A clean unit 118 is provided above the spare cassette shelf 110 so that clean air is circulated inside the housing 101.

  A processing furnace 202 is provided above the rear portion of the housing 101, and a boat 217 as a substrate holding unit that holds the wafers 200 as substrates in a horizontal posture in multiple stages is raised and lowered to the processing furnace 202 below the processing furnace 202. A boat elevator 121 as an elevating means is provided, and a seal cap 219 as a lid is attached to the tip of an elevating member 122 attached to the boat elevator 121 to support the boat 217 vertically. Between the boat elevator 121 and the cassette shelf 109, a transfer elevator 113 as an elevating means is provided, and a wafer transfer machine 112 as a transfer means is attached to the transfer elevator 113. Further, a furnace port shutter 116 as a shielding member having an opening / closing mechanism and closing the lower surface of the processing furnace 202 is provided beside the boat elevator 121.

  The cassette 100 loaded with the wafers 200 is loaded from the external transfer device (not shown) onto the cassette stage 105 in an upward posture, and is rotated by 90 ° C. on the cassette stage 105 so that the wafer 200 is in a horizontal posture. Further, the cassette 100 is transported from the cassette stage 105 to the cassette shelf 109 or the spare cassette shelf 110 by cooperation of the raising / lowering operation of the cassette elevator 115, the transverse operation, the advance / retreat operation of the cassette transfer machine 114, and the rotation operation.

  The cassette shelf 109 has a transfer shelf 123 in which the cassette 100 to be transferred by the wafer transfer device 112 is stored. The cassette 100 to which the wafer 200 is transferred is transferred by the cassette elevator 115 and the cassette transfer device 114. Transferred to the transfer shelf 123.

  When the cassette 100 is transferred to the transfer shelf 123, the wafers 200 are transferred from the transfer shelf 123 to the boat 217 in a lowered state by the cooperation of the advance / retreat operation, the rotation operation, and the lifting / lowering operation of the transfer elevator 113. Is transferred.

  When a predetermined number of wafers 200 are transferred to the boat 217, the boat 217 is inserted into the processing furnace 202 by the boat elevator 121, and the processing furnace 202 is hermetically closed by the seal cap 219. In the processing furnace 202 that is hermetically closed, the wafer 200 is heated and a processing gas is supplied into the processing furnace 202 to process the wafer 200.

When the processing on the wafer 200 is completed, the wafer 200 is transferred from the boat 217 to the cassette 100 of the transfer shelf 123 by the reverse procedure of the operation described above, and the cassette 100 is transferred from the transfer shelf 123 by the cassette transfer device 114. It is transferred to the cassette stage 105 and carried out of the housing 101 by an external transfer device (not shown). The furnace port shutter 116 closes the lower surface of the processing furnace 202 when the boat 217 is in the lowered state, and prevents outside air from being caught in the processing furnace 202.
The transport operation of the cassette transfer machine 114 and the like is controlled by the transport control means 124.

It is a schematic longitudinal cross-sectional view for demonstrating the substrate processing apparatus of Example 1 of this invention. It is a schematic longitudinal cross-sectional view for demonstrating the substrate processing apparatus for a comparison. It is a schematic longitudinal cross-sectional view of the vertical substrate processing furnace in the substrate processing apparatus of Example 2 of this invention. It is a schematic cross-sectional view of the vertical substrate processing furnace in the substrate processing apparatus of Example 2 of this invention. It is a figure for demonstrating the nozzle 233 of the vertical substrate processing furnace in the substrate processing apparatus of Example 2 of this invention, FIG. 5A is schematic and FIG. 5B is the elements on larger scale of the A section of FIG. 3A. . It is a schematic oblique view for demonstrating the substrate processing apparatus of Example 2 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Processing chamber 2 ... Pump 10 ... Buffer tank 12 ... Gas B supply piping 13 ... Exhaust piping 14 ... Bubbling gas supply piping 21, 22, 23, 24, 25 ... Open / close valve 30 ... Pipe heater 40 ... Liquid raw material tank DESCRIPTION OF SYMBOLS 41 ... Liquid raw material 42 ... Raw material supply piping 50 ... Buffer tank heating mechanism 200 ... Wafer 201 ... Processing chamber 202 ... Processing furnace 203 ... Reaction tube 207 ... Heater 209 ... Manifold 217 ... Boat 218 ... Quartz cap 219 ... Seal cap 220 ... O Ring 231 ... Gas exhaust pipe 232a ... Gas supply pipe 232b ... Gas supply pipe 232c ... Inert gas line 232d ... Inert gas line 233 ... Nozzle 241a ... Mass flow controller 241b ... Mass flow controller 243a ... Valve 243d ... Valve 246 ... Vacuum pump 48b ... gas supply holes 251 ... heater base 252 ... Valve 253 ... Valve 254 ... Valve 255 ... Valve 256 ... Valve 260 ... TMA vessel 261 ... liquid material (TMA)
267 ... Boat rotation mechanism 300 ... Heater 301 ... Buffer tank heating mechanism 310 ... Buffer tank 321 ... Controller

Claims (1)

A processing chamber;
A loading / unloading mechanism for loading / unloading at least one substrate into / from the processing chamber;
A raw material supply mechanism for supplying at least one raw material to the processing chamber;
Among the at least one raw material, at least one raw material is liquid or solid at normal temperature and normal pressure, and a gasification mechanism that vaporizes or sublimates the raw material that is liquid or solid at normal temperature and normal pressure,
A buffer tank that is provided in the middle of the raw material supply mechanism between the gasification mechanism and the processing chamber, and temporarily stores the gasified raw material;
And a heating mechanism for heating the buffer tank.

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