JP2012172171A - Substrate processing apparatus, and thin film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the following problem: the film deposition rate of a growing metal thin film and the film quality are dispersed.SOLUTION: A substrate processing apparatus includes a liquid material tank 315 for storing liquid material or solid material, gasification mechanisms 315, 310 for gasifying the liquid material or the solid material in a gaseous state, and an MFC (Mass Flow Controller) 318 provided between the gasification mechanisms 315, 310 and a processing chamber 201. A controller 280 controls the flow rate of the material gas by controlling the gasification mechanisms 315, 310 and the MFC 318 when the liquid material or the solid material is supplied in a gaseous state.

Description

  The present invention relates to a substrate processing apparatus and a thin film forming method, and more particularly to a substrate processing apparatus for forming a conductive thin film using a liquid or solid metal raw material and a thin film forming method including a step of forming a metal thin film on a substrate. .

  Conventionally, there is a CVD (Chemical Vapor Deposition) method as one of methods for forming a metal thin film on a substrate. The CVD method is a method in which a film containing an element contained in a raw material molecule as a constituent element is formed on a substrate by utilizing a reaction of two or more raw materials in a gas phase or on the substrate surface. As one of the CVD methods, there is an ALD (Atomic Layer Deposition) method. The ALD method is a method in which two or more kinds of raw materials used for film formation are alternately supplied onto a substrate under a certain film formation condition (temperature, time, etc.) and adsorbed in units of atomic layers. This is a technique for performing film formation controlled at the atomic layer level using surface reaction. An example of the metal thin film formed on the substrate is a titanium nitride film (TiN) as disclosed in Patent Document 1.

International Publication No. 2007/020874

  However, when forming a metal thin film, a solid raw material or a liquid raw material may be used as a material. When film formation is performed by the CVD method, for example, the supply amount of the metal raw material supplied by the bubbling method is basically determined by the saturation vapor pressure and the flow rate of the carrier gas. The tank is directly connected, and a part of the evaporated metal raw material flows into the reaction chamber regardless of the carrier gas flow rate. For this reason, the controllability of the supply amount of the metal raw material is deteriorated, and the film formation speed of the CVD reaction varies, and as a result, the film quality varies.

  Since the ALD method uses the saturating phenomenon, it is possible in principle to solve the problems of the CVD method. However, in the ALD method of TiN and other metal-based materials, the film formation amount per cycle of the ALD reaction is often not completely saturated. Therefore, the problems in CVD can be alleviated but cannot be solved completely. become. Furthermore, particularly when a more active metal material is used in the ALD reaction, if the metal material supply step is too long, a CVD reaction occurs due to decomposition of the material, which is not preferable. For this reason, measures are taken to increase the supply amount per unit time for the purpose of shortening the supply step. However, in this case as well, there may be an effect of variations in material supply.

  An object of the present invention is to solve the above-mentioned problems and to provide a substrate processing apparatus and a thin film forming method capable of suppressing the film forming speed and film quality variation of a growing metal thin film.

  According to one aspect of the present invention, a processing container that accommodates a substrate, a raw material tank that stores a liquid raw material or a solid raw material, a raw material supply path that supplies the raw material from the raw material tank to the processing container, and the raw material supply A gasification mechanism that is provided in a passage and converts a liquid raw material or a solid raw material into a gas state; a flow rate control mechanism that is provided between the gasification mechanism and the processing vessel in the raw material supply path; and the gasification A control unit that controls the flow rate control mechanism, and the control unit controls the gasification mechanism and the flow rate control mechanism when supplying the liquid source or the solid source in a gas state to the processing container. A substrate processing apparatus configured to control and control a flow rate of a source gas is provided.

  According to another aspect of the present invention, a processing container that accommodates a substrate, a raw material tank that stores a liquid raw material or a solid raw material, a raw material supply path that supplies the raw material from the raw material tank to the processing container, and the raw material supply A liquefaction mechanism that is provided in the channel and is in a liquid state by melting the liquid raw material or solid raw material by heating or dissolving in a solvent; and provided in the raw material supply channel and provided between the liquefaction mechanism and the processing vessel. A gasification mechanism, a raw material supply path, a liquid flow rate control mechanism provided between the liquefaction mechanism and the processing vessel, and a control for controlling the liquefaction mechanism, the gasification mechanism, and the liquid flow rate control mechanism And the control unit controls the liquefaction mechanism and the liquid flow rate control mechanism to control the flow rate of the raw material in the liquid state when supplying the liquid source or the solid source to the processing container. After your, to provide a substrate processing apparatus configured to supply the raw material gas state to the processing vessel is gasified raw material of the liquid state by controlling the gasification mechanism.

  According to the present invention, it is possible to suppress variations in film formation speed and film quality of a growing metal thin film.

1 is a perspective view showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention. It is a schematic block diagram of an example of the processing furnace which concerns on the 1st Embodiment of this invention, and the member accompanying it, Comprising: It is a figure which shows a processing furnace part with a longitudinal cross-section especially. It is the sectional view on the AA line of the processing furnace shown in FIG. 2 which concerns on the 1st Embodiment of this invention. FIG. 3 is an enlarged detail view showing an example of a configuration centering on a first gas supply system according to the first embodiment of the present invention. It is a block diagram for demonstrating the controller which concerns on the 1st Embodiment of this invention, and each member controlled by the said controller. It is a flowchart of the film-forming process performed in the substrate processing apparatus which concerns on the 1st Embodiment of this invention. It is a figure which shows the film-forming sequence of the titanium nitride film in the 1st film-forming process based on the 1st Embodiment of this invention. It is a figure which shows the film-forming sequence of the titanium nitride film in the 2nd film-forming process based on the 1st Embodiment of this invention. It is an enlarged detail drawing which shows an example of a structure centering on the 1st gas supply system which concerns on the 2nd Embodiment of this invention. It is an enlarged detail drawing which shows an example of a structure centering on the 1st gas supply system which concerns on the 3rd Embodiment of this invention.

  Next, an embodiment for carrying out the present invention will be described with reference to the drawings.

<First Embodiment>
<Configuration of substrate processing apparatus>
First, the configuration of the substrate processing apparatus 101 according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a perspective view showing a schematic configuration of the substrate processing apparatus according to the first embodiment of the present invention.

  The substrate processing apparatus 101 according to the first embodiment of the present invention is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device (IC (Integrated Circuits)). In the following description, as an example of the substrate processing apparatus, a case will be described in which a vertical apparatus that performs a film forming process or the like on a substrate is used. However, the present invention is not based on the use of a vertical apparatus, and for example, a single wafer apparatus may be used.

  As shown in FIG. 1, the substrate processing apparatus 101 uses a cassette 110 containing a wafer 200 as an example of a substrate, and the wafer 200 is made of a material such as silicon. The substrate processing apparatus 101 includes a housing 111, and a cassette stage 114 is installed inside the housing 111. The cassette 110 is carried on the cassette stage 114 by an in-process transfer device (not shown) or unloaded from the cassette stage 114.

  The cassette stage 114 is placed by the in-process transfer device so that the wafer 200 in the cassette 110 maintains a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward. The cassette stage 114 rotates the cassette 110 clockwise 90 ° to the rear of the casing 111 so that the wafer 200 in the cassette 110 is in a horizontal posture, and the wafer loading / unloading port of the cassette 110 faces the rear of the casing 111. It is configured to be operable.

  A cassette shelf 105 is installed in a substantially central portion of the casing 111 in the front-rear direction, and the cassette shelf 105 is configured to store a plurality of cassettes 110 in a plurality of rows and a plurality of rows. The cassette shelf 105 is provided with a transfer shelf 123 in which a cassette 110 to be transferred by a wafer transfer mechanism 125 described later is stored.

  A reserve cassette shelf 107 is provided above the cassette stage 114, and is configured to store the cassette 110 in a preliminary manner.

  A cassette carrying device 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette carrying device 118 includes a cassette elevator 118a that can move up and down while holding the cassette 110, and a cassette carrying mechanism 118b as a carrying mechanism. The cassette carrying device 118 is configured to carry the cassette 110 among the cassette stage 114, the cassette shelf 105, and the spare cassette shelf 107 by continuous operation of the cassette elevator 118a and the cassette carrying mechanism 118b.

  A wafer transfer mechanism 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 includes a wafer transfer device 125a capable of rotating or linearly moving the wafer 200 in the horizontal direction, and a wafer transfer device elevator 125b for moving the wafer transfer device 125a up and down. The wafer transfer device 125 a is provided with a tweezer 125 c for picking up the wafer 200. The wafer transfer device 125 loads (charges) the wafer 200 to the boat 217 using the tweezers 125c as the placement portion of the wafer 200 by continuous operation of the wafer transfer device 125a and the wafer transfer device elevator 125b. The boat 217 is configured to be detached (discharged).

  A processing furnace 202 for heat-treating the wafer 200 is provided above the rear portion of the casing 111, and a lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port shutter 147.

  Below the processing furnace 202, a boat elevator 115 that raises and lowers the boat 217 with respect to the processing furnace 202 is provided. An arm 128 is connected to the lifting platform of the boat elevator 115, and a seal cap 219 is horizontally installed on the arm 128. The seal cap 219 is configured to support the boat 217 vertically and to close the lower end portion of the processing furnace 202.

  The boat 217 includes a plurality of holding members, and is configured to hold a plurality of (for example, about 50 to 150) wafers 200 horizontally in a state where the centers are aligned in the vertical direction. Yes.

  Above the cassette shelf 105, a clean unit 134a for supplying clean air that is a cleaned atmosphere is installed. The clean unit 134a includes a supply fan and a dustproof filter, and is configured to distribute clean air inside the casing 111.

  A clean unit 134 b that supplies clean air is installed at the left end of the housing 111. The clean unit 134b also includes a supply fan and a dustproof filter, and is configured to distribute clean air in the vicinity of the wafer transfer device 125a, the boat 217, and the like. The clean air is exhausted to the outside of the casing 111 after circulating in the vicinity of the wafer transfer device 125a, the boat 217, and the like.

  Next, main operations of the substrate processing apparatus 101 will be described.

  When the cassette 110 is loaded onto the cassette stage 114 by an in-process transfer device (not shown), the cassette 110 holds the wafer 200 in a vertical position on the cassette stage 114 and the wafer loading / unloading port of the cassette 110 is directed upward. It is placed so that it faces. After that, the cassette 110 is moved clockwise 90 to the rear of the casing 111 so that the wafer 200 in the cassette 110 is in a horizontal posture by the cassette stage 114 and the wafer loading / unloading port of the cassette 110 faces the rear of the casing 111. ° Rotated.

  Thereafter, the cassette 110 is automatically transported and delivered by the cassette transport device 118 to the designated shelf position of the cassette shelf 105 or the spare cassette shelf 107 and temporarily stored, and then the cassette shelf 105 or the spare cassette shelf. It is transferred from 107 to the transfer shelf 123 by the cassette transfer device 118 or directly transferred to the transfer shelf 123.

  When the cassette 110 is transferred to the transfer shelf 123, the wafer 200 is picked up from the cassette 110 through the wafer loading / unloading port by the tweezer 125 c of the wafer transfer device 125 a and loaded (charged) into the boat 217. The wafer transfer device 125 a that has transferred the wafer 200 to the boat 217 returns to the cassette 110 and loads the subsequent wafer 200 into the boat 217.

  When a predetermined number of wafers 200 are loaded into the boat 217, the furnace port shutter 147 that has closed the lower end of the processing furnace 202 is opened, and the lower end of the processing furnace 202 is opened. Thereafter, the boat 217 holding the wafer group 200 is loaded into the processing furnace 202 by the ascending operation of the boat elevator 115, and the lower part of the processing furnace 202 is closed by the seal cap 219.

  After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202. After the processing, the wafer 200 and the cassette 110 are carried out of the casing 111 in the reverse procedure described above.

  Next, the processing furnace 202 applied to the substrate processing apparatus 101 described above will be described with reference to FIGS. FIG. 2 is a schematic configuration diagram of an example of the processing furnace 202 according to the first embodiment of the present invention and members accompanying the processing furnace 202, and particularly shows a vertical section of the processing furnace. FIG. It is the sectional view on the AA line of the processing furnace 202 shown in FIG. 2 which concerns on the 1st Embodiment of invention. In FIG. 2, a cleaning gas supply system, which will be described later, is not shown for convenience of explanation.

  As shown in FIGS. 2 and 3, the processing furnace 202 is provided with a heater 207 which is a heating device (heating means) for heating the wafer 200. The heater 207 includes a cylindrical heat insulating member whose upper portion is closed and a plurality of heater wires, and has a unit configuration in which the heater wires are provided on the heat insulating member. A quartz reaction tube 203 for processing the wafer 200 is provided inside the heater 207.

  Below the reaction tube 203, a seal cap 219 is provided as a furnace opening lid capable of airtightly closing the lower end opening of the reaction tube 203. The seal cap 219 is brought into contact with the lower end of the reaction tube 203 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as stainless steel and has a disk shape. An O-ring 220 is provided on the upper surface of the seal cap 219 as a seal member that contacts the lower end of the reaction tube 203. A rotation mechanism 267 for rotating the boat is provided on the side of the seal cap 219 opposite to the processing chamber 201. A rotation shaft 255 of the rotation mechanism 267 passes through the seal cap and is connected to a boat 217 described later, and is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be moved up and down in the vertical direction by a boat elevator 115 as an elevating mechanism provided outside the reaction tube 203, so that the boat 217 can be carried into and out of the processing chamber 201. It is possible.

  The seal cap 219 is provided with a boat support 218 that supports the boat 217. As shown in FIG. 1, the boat 217 includes a bottom plate 210 fixed to the boat support base 218 and a top plate 211 disposed above the bottom plate 210, and a plurality of support columns are disposed between the bottom plate 210 and the top plate 211. 212 has a construction in which it is constructed. A plurality of wafers 200 are held on the boat 217. The plurality of wafers 200 are supported by the support columns 212 of the boat 217 in a state in which the wafers 200 are held in a horizontal posture with a predetermined interval therebetween.

  In the processing furnace 202 described above, in a state where a plurality of wafers 200 to be batch-processed are stacked on the boat 217 in multiple stages, the boat 217 is inserted into the processing chamber 201 while being supported by the boat support 218, and the heater 207 is The wafer 200 inserted into the processing chamber 201 is heated to a predetermined temperature.

  As shown in FIGS. 2 and 3, two gas supply pipes 310 and 320 (first gas supply pipe 310 and second gas supply pipe 320) for supplying source gas are connected to the processing chamber 201. Has been.

  The gas supply pipe 310 is an example of the “raw material supply path” according to the present invention. The gas supply pipe 310 includes an MFC (Mass Flow Controller) 312, a valve 314 that is an on-off valve, A liquid raw material tank 315 that is an example of the “raw material tank” according to the invention, a valve 317 that is an on-off valve, an MFC 318 that is an example of the “flow rate control mechanism” according to the present invention, and a valve 319 that is an on-off valve are provided.

  A nozzle 410 (first nozzle 410) is connected to the tip of the gas supply pipe 310. The nozzle 410 is an arc-shaped space between the inner wall of the reaction tube 203 constituting the processing chamber 201 and the wafer 200, and extends in the vertical direction along the inner wall of the reaction tube 203 (the loading direction of the wafer 200). is doing. A large number of gas supply holes 410 a for supplying a source gas are provided on the side surface of the nozzle 410. The gas supply holes 410a have the same or inclined opening area from the lower part to the upper part, and are provided at the same opening pitch.

  Further, the gas supply pipe 310 is provided with a vent line 610 and a valve 614 connected to an exhaust pipe 231 described later between the MFC 318 and the valve 319, and when the source gas is not supplied to the processing chamber 201, The source gas is supplied to the vent line 610 via the valve 614. A gas supply pipe 310, MFC 312, valve 314, liquid raw material tank 315, valve 317, MFC 318, valve 319, nozzle 410, vent line 610, and valve 614 constitute a first gas supply system.

  Further, a carrier gas supply pipe 510 for supplying a carrier gas is connected to the gas supply pipe 310. The carrier gas supply pipe 510 is provided with an MFC 512 and a valve 514. The source gas supplied from the gas supply pipe 310 merges with the carrier gas supply pipe 510 and is further supplied into the processing chamber 201 through the nozzle 410 as a reaction gas. A carrier gas supply pipe 510, MFC 512, and valve 514 mainly constitute a first carrier gas supply system (inert gas supply system).

  The gas supply pipe 320 is provided with an MFC 322 and a valve 324 in order from the upstream side. A nozzle 420 (second nozzle 420) is connected to the distal end portion of the gas supply pipe 320. Similarly to the nozzle 410, the nozzle 420 is an arc-shaped space between the inner wall of the reaction tube 203 constituting the processing chamber 201 and the wafer 200, and the vertical direction along the inner wall of the reaction tube 203 (of the wafer 200. Extending in the loading direction). A large number of gas supply holes 420 a for supplying a source gas are provided on the side surface of the nozzle 420. Similarly to the gas supply holes 410a, the gas supply holes 420a have the same or inclined opening areas from the lower part to the upper part, and are provided at the same opening pitch. A second gas supply system is mainly configured by the gas supply pipe 320, the MFC 322, the valve 324, and the nozzle 420.

  A carrier gas supply pipe 520 for supplying a carrier gas is connected to the gas supply pipe 320. The carrier gas supply pipe 520 is provided with an MFC 522 and a valve 524. The raw material gas supplied from the gas supply pipe 320 merges with the carrier gas supply pipe 520 and is further supplied into the processing chamber 201 through the nozzle 420 as a reaction gas. A carrier gas supply pipe 520, MFC 522, and valve 524 mainly constitute a second carrier gas supply system (inert gas supply system).

As an example of the above-described configuration, the gas supply pipe 310 includes Ti raw materials (titanium tetrachloride (TiCl ₄ ), tetrakisdimethylaminotitanium (TDMAT, Ti [N (CH ₃ ) ₂ ] ₄ ), tetrakisdiethylamino as examples of source gases. Titanium (TDEAT, Ti [N (CH ₂ CH ₃ ) ₂ ] ₄ ), etc.) is introduced. As an example of the reforming raw material, ammonia (NH ₃ ), nitrogen (N ₂ ), nitrous oxide (N ₂ O), monomethylhydrazine (CH ₆ N ₂ ), etc. are introduced into the gas supply pipe 320 as an example of the reforming raw material. The

From the carrier gas supply pipes 510 and 520, for example, nitrogen (N ₂ ) gas is supplied into the processing chamber 201 via the MFCs 512 and 522, the valves 514 and 524, the gas supply pipes 510 and 520, and the nozzles 410 and 420, respectively. The

  For example, when each of the above gases is supplied from each gas supply pipe, a source gas supply system, that is, a metal-containing gas (metal compound) supply system is configured by the first gas supply system. In addition, a reactive gas (reformed gas) supply system is configured by the second gas supply system.

  Next, the details of the first gas supply system according to the first embodiment of the present invention will be described with reference to FIG. FIG. 4 is an enlarged detailed view showing an example of a configuration centering on the first gas supply system according to the first embodiment of the present invention.

  As shown in FIG. 4, the liquid raw material tank 101 includes a raw material in a liquid state, a raw material in a liquid state by melting the raw material in a solid state by heating, or a solvent in which a solid raw material is dissolved (hereinafter referred to as “raw material” A closed container capable of containing (filling).

  The gas supply pipe 310 includes a carrier gas supply pipe 310a that supplies a carrier gas from the outside to the liquid source tank 315, and a source gas supply pipe 310b that supplies the vaporized source gas from the liquid source tank 315 to the processing chamber 201. ing. The carrier gas supply pipe 310 a is configured such that a carrier gas supply source (not shown) is connected to an upstream end portion, and a downstream end portion is immersed in a raw material liquid stored in a liquid raw material tank 315. . On the other hand, the upstream end of the source gas supply pipe 310b is configured not to be immersed in the source liquid stored in the liquid source tank 315.

  With the configuration of the first gas supply system according to the first embodiment of the present invention, the bubbling method is used as the material supply method, and the carrier gas is supplied into the liquid material tank 315 so that the liquid material tank 315 is accommodated. The raw material liquid is vaporized by bubbling to generate a raw material gas, which can be supplied to the processing chamber 201. That is, the liquid source tank 315, the carrier gas supply pipe 310a, and the source gas supply pipe 310b constitute an example of the “gasification mechanism” according to the present invention. As the carrier gas, a gas that does not react with the raw material liquid is preferably used. For example, an inert gas such as N 2 gas, Ar gas, or He gas is preferably used.

  An MFC 318 which is a part of the source gas supply pipe 310b and is an example of the “flow rate control mechanism” according to the present invention is provided on the downstream side of the liquid source tank 315. Control of the MFC 318 and the controller 280 described later makes it possible to control the flow rate of the raw material liquid that is in a gas state, that is, the raw material gas vaporized by bubbling.

  In the first embodiment of the present invention, the MFC 318 is provided on the upstream side from the branch point between the source gas supply pipe 310b and the vent line 610 connected to the exhaust pipe 231 as shown in FIG. However, as long as it is provided between the liquid raw material tank 315 and the processing chamber 201 which is an example of the “gasification mechanism” according to the present invention and the flow rate of the vaporized raw material gas can be controlled, it is particularly limited. It may not have various aspects. For example, it may be provided downstream from the branch point between the source gas supply pipe 310b and the vent line 610 connected to the exhaust pipe 231.

  According to this configuration, the controller 280, which will be described later, controls the MFC 318, whereby the supply amount of the metal raw material (that is, the metal raw material vaporized by the bubbling method) can be controlled. Variations in film formation rate and film quality can be suppressed.

  As shown in FIG. 4, the gas supply pipe 310 is connected with a cleaning gas supply pipe 330 for supplying a cleaning gas, and the cleaning gas supply pipe 330 is provided with an MFC 332, a valve 334, and a switching valve 336. Yes. A cleaning gas supply pipe 340 for supplying a cleaning gas is connected to the gas supply pipe 320, and the cleaning gas supply pipe 340 is provided with an MFC 342, a valve 344, and a switching valve 346. On the other hand, the gas supply pipes 310 and 320 are respectively provided with switching valves 338 and 348 on the upstream side from the joining point where the cleaning gas supply pipes 330 and 340 join each other. A cleaning gas supply system is mainly configured by the cleaning gas supply pipes 330 and 340, the MFCs 332 and 342, the bubbles 334 and 344, and the switching valves 336, 346, 338, and 348.

  Returning to FIG. 2 again, the reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201. The exhaust pipe 231 is evacuated via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 243 as a pressure regulator (pressure adjustment unit). A vacuum pump 246 serving as an exhaust device is connected, and the processing chamber 201 can be evacuated so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum). Note that the APC valve 243 is an open / close valve that can open and close the valve to evacuate / stop the evacuation in the processing chamber 201 and further adjust the valve opening to adjust the pressure. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 243, the vacuum pump 246, and the pressure sensor 245.

  A temperature sensor 263 as a temperature detector is installed in the reaction tube 203, and the temperature in the processing chamber 201 is adjusted by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. It is configured to have a desired temperature distribution. The temperature sensor 263 is configured in an L shape similarly to the nozzles 410 and 420, and is provided along the inner wall of the reaction tube 203.

  A boat 217 is provided at the center in the reaction tube 203. The boat 217 can be moved up and down (in and out) with respect to the reaction tube 203 by the boat elevator 115. A boat rotation mechanism 267 that rotates the boat 217 is provided at the lower end of the boat support 218 that supports the boat 217 in order to improve processing uniformity. By driving the boat rotation mechanism 267, the boat 217 supported by the boat support 218 can be rotated.

  MFC312, 318, 322, 332, 342, 512, 522, valves 314, 317, 319, 324, 334, 346, 348, 344, 346, 348, 514, 524, 614, APC valve 243, heater 207, Each member such as the temperature sensor 263, the pressure sensor 245, the vacuum pump 246, the boat rotation mechanism 267, and the boat elevator 115 is connected to the controller 280. The controller 280 is an example of a “control unit” according to the present invention that controls the overall operation of the substrate processing apparatus 101. The controller 280 adjusts the flow rate of the MFCs 312, 318, 322, 332, 342, 512, 522, the valves 314, 317, 319, 324, 334, 346, 348, 344, 346, 348, 514, 524, 614 opening / closing, opening / closing of the APC valve 243 and pressure adjustment operation based on the pressure sensor 245, temperature adjustment of the heater 207 based on the temperature sensor 263 The operation, the start / stop of the vacuum pump 246, the rotation speed adjustment of the boat rotation mechanism 267, the lifting / lowering operation of the boat elevator 115, and the like are respectively controlled.

  Next, the controller 280 according to the first embodiment of the present invention and each member controlled by the controller 280 will be described with reference to FIG. FIG. 5 is a block diagram for explaining the controller 280 and each member controlled by the controller 280 according to the first embodiment of the present invention.

  As shown in FIG. 5, the controller 280 includes a display 288 that displays an operation menu and the like, and an operation input unit 290 that includes a plurality of keys and inputs various information and operation instructions. The controller 280 stores a CPU 281 that controls the overall operation of the substrate processing apparatus 101, a ROM 282 that stores various programs including a control program in advance, a RAM 283 that temporarily stores various data, and various data. An HDD 284 to be held, a display driver 287 that controls display of various types of information on the display 288 and receives operation information from the display 288, an operation input detection unit 289 that detects an operation state of the operation input unit 290, and a temperature described later Various members such as a control unit 291, a pressure control unit 294 described later, a vacuum pump 246, a boat rotating mechanism 267, a boat elevator 115, MFCs 312, 318, 322, 332, 342, 512, 522, a valve control unit 299 described later, and various types Communication that sends and receives information An interface (I / F) unit 285, and a.

  The CPU 281, ROM 282, RAM 283, HDD 284, display driver 287, operation input detection unit 289, and communication I / F unit 285 are connected to each other via a system bus BUS 286. Therefore, the CPU 281 can access the ROM 282, RAM 283, and HDD 284, control display of various information on the display 288 via the display driver 287, grasp operation information from the display 288, communication I / F It is possible to control transmission / reception of various information to / from each member via the unit 285. Further, the CPU 281 can grasp the operation state of the user with respect to the operation input unit 290 via the operation input detection unit 289.

  The temperature control unit 291 is a communication I / F unit 293 that transmits and receives various information such as set temperature information between the heater 207, the heating power source 250 that supplies power to the heater 207, the temperature sensor 263, and the controller 280. And a heater control unit 292 that controls the power supplied from the heating power source 250 to the heater 207 based on the received set temperature information, temperature information from the temperature sensor 263, and the like. The heater control unit 292 is also realized by a computer. The communication I / F unit 293 of the temperature control unit 291 and the communication I / F unit 285 of the controller 280 are connected by a cable 751.

  The pressure control unit 294 includes a communication I / F unit 296 that transmits and receives various types of information such as set pressure information and APC valve 243 opening / closing information between the APC valve 243, the pressure sensor 245, and the controller 280, and the received setting. An APC valve control unit 295 that controls the opening and closing and the opening degree of the APC valve 243 based on the pressure information, the opening and closing information of the APC valve 243, the pressure information from the pressure sensor 245, and the like. The APC valve control unit 295 is also realized by a computer. The communication I / F unit 296 of the pressure control unit 294 and the communication I / F unit 285 of the controller 280 are connected by a cable 752.

  The vacuum pump 246, the boat rotation mechanism 267, the boat elevator 115, the MFC 312, 318, 322, 332, 342, 512, 522 and the communication I / F unit 285 of the controller 280 are respectively connected to cables 753, 754, 755, 756, 757, 758, 759, 760, 761, and 762 are connected.

  The valve controller 299 includes valves 314, 317, 319, 324, 334, 346, 348, 344, 346, 348, 514, 524, 614, and valves 314, 317, 319, 324, 334, 346, which are air valves. 348, 344, 346, 348, 514, 524, 614 and an electromagnetic valve group 298 for controlling the supply of air. The electromagnetic valve group 298 includes electromagnetic valves 297 corresponding to the valves 314, 317, 319, 324, 334, 346, 348, 344, 346, 348, 514, 524, and 614, respectively. The electromagnetic valve group 298 and the communication I / F unit 285 of the controller 280 are connected by a cable 763.

<Method for Manufacturing Semiconductor Device>
Next, referring to FIG. 6 to FIG. 8, a large scale integration (LSI) is performed as one step of the manufacturing process of the semiconductor device (device) using the processing furnace 202 of the substrate processing apparatus described above. An example of a method for forming an insulating film on a substrate when manufacturing the substrate will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 280.

  In this embodiment, a method for forming a titanium nitride film on a substrate as a metal film will be described. FIG. 6 is a flowchart of the film forming process executed in the substrate processing apparatus 101 according to the first embodiment of the present invention, and FIG. 7 shows the first process according to the first embodiment of the present invention. FIG. 8 is a diagram showing a titanium nitride film deposition sequence in the film deposition process, and FIG. 8 is a diagram showing a titanium nitride film deposition sequence in the second film deposition process according to the first embodiment of the present invention. .

  The titanium nitride film is divided into two processes so as to be formed on the substrate by different film forming methods. First, as a first film forming step, a titanium nitride film is formed on the substrate by using the ALD method. Next, a titanium nitride film is formed on the substrate by a CVD method as a second film formation step.

In the present embodiment, an example in which TiCl ₄ is used as a titanium (Ti) -containing material and NH ₃ is used as a nitriding gas will be described. In this example, a titanium-containing gas supply system (first element-containing gas supply system) is configured by the first gas supply system, and a nitrogen-containing gas supply system (second element-containing) is formed by the second gas supply system. Gas supply system) is configured.

  FIG. 6 shows an example of a control flow in the present embodiment. First, when a plurality of wafers 200 are loaded into the boat 217 (wafer charging), the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat loading). The In this state, the seal cap 219 seals the lower end of the reaction tube 203 via the O-ring 220.

  Further, in the film forming process, the controller 280 controls the substrate processing apparatus 101 as follows. That is, the heater 207 is controlled to keep the inside of the processing chamber 201 at a temperature in the range of 300 ° C. to 550 ° C., for example, preferably 450 ° C. or less, more preferably 450 ° C.

  Thereafter, a plurality of wafers 200 are loaded into the boat 217, and the boat 217 is carried into the processing chamber 201. Thereafter, the boat 217 is rotated by the boat driving mechanism 267 to rotate the wafer 200. Thereafter, the vacuum pump 246 is operated and the APC valve 243 is opened to evacuate the processing chamber 201. When the temperature of the wafer 200 reaches 450 ° C. and the temperature is stabilized, the temperature in the processing chamber 201 is increased to 450 ° C. The steps described later are sequentially executed in the held state.

(1) 1st film-forming process (alternate supply process)
FIG. 7 shows a film forming sequence of the titanium nitride film in the first film forming process according to the present embodiment. In the first film formation step, an example in which film formation is performed on a substrate using the ALD method will be described. The ALD method is one of CVD methods, and under a certain film forming condition (temperature, time, etc.), source gases as at least two kinds of raw materials used for film forming are alternately supplied onto the substrate one by one. In this method, the film is adsorbed on the substrate in units of one atom, and film formation is performed using a surface reaction. At this time, the film thickness is controlled by the number of cycles in which the source gas is supplied (for example, if the film forming speed is 1 kg / cycle, 20 cycles are performed when a 20 mm film is formed).

(Step 11)
In step 11, TiCl ₄ is flowed. TiCl ₄ is a liquid at room temperature, and an inert gas such as He (helium), Ne (neon), Ar (argon), N ₂ (nitrogen) or the like, which is called a carrier gas, is added to the TiCl ₄ container (ie, liquid source tank 315). The vaporized part is supplied to the processing chamber 201 together with the carrier gas.

TiCl _{4 is} passed through the gas supply pipe 310 and carrier gas (N ₂ ) is passed through the carrier gas supply pipe 510. The valves 314, 317, and 319 of the gas supply pipe 310, the switching valve 338, the valve 514 of the carrier gas supply pipe 510, and the APC valve 243 of the exhaust pipe 231 are opened, and the switching valve 336 of the cleaning gas supply pipe 330 and the vent line 610 are opened. Valve 614 is closed. The carrier gas flows from the carrier gas supply pipe 510 and the flow rate is adjusted by the MFC 512. TiCl ₄ is vaporized and supplied from the liquid tank 315 in a bubbling manner, and the flow rate is adjusted by the MFC 318. The carrier gas whose flow rate is adjusted is mixed, and the exhaust pipe is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410. 231 is exhausted.

At this time, the APC valve 243 is appropriately adjusted to maintain the pressure in the processing chamber 201 within a range of 20 to 50 Pa, for example, 30 Pa. The supply amount of TiCl ₄ controlled by the MFC 318 is 1.0 to 2.0 g / min. The time for exposing the wafer 200 to TiCl ₄ is 3 to 10 seconds. At this time, the temperature of the heater 207 is set such that the wafer temperature is in the range of 300 ° C. to 550 ° C., for example, 450 ° C.

In the first embodiment of the present invention, it is exemplified that the supply amount of TiCl ₄ is controlled by the MFC 318. However, as long as it is possible to suppress the film formation speed and film quality variation of the growing metal thin film. Various aspects may be provided. For example, the supply amount of TiCl ₄ may be controlled using both the MFC 312 and the MFC 318, and the control of the MFC 318 may be prioritized.

At this time, the gases flowing into the processing chamber 201 are only inert gases such as TiCl ₄ , N ₂ , and Ar, and NH ₃ does not exist. Therefore, TiCl ₄ does not cause a gas phase reaction, and reacts with the surface of the wafer 200 and the base film (chemical adsorption) to form an adsorption layer or Ti layer (hereinafter referred to as Ti-containing layer) of the raw material (TiCl ₄ ). Form. The adsorption layer of TiCl ₄ includes a continuous adsorption layer of raw material molecules and a discontinuous adsorption layer. The Ti layer includes not only a continuous layer composed of Ti but also a Ti thin film formed by overlapping these layers. In addition, the continuous layer comprised by Ti may be called Ti thin film.

At the same time, by opening the valve 524 and the switching valve 348 from the carrier gas supply pipe 520 connected in the middle of the gas supply pipe 320 and flowing an inert gas, TiCl ₄ can be prevented from flowing into the NH ₃ side.

(Step 12)
The valve 314 of the gas supply pipe 310 is closed to stop the supply of TiCl ₄ to the processing chamber, and the valve 614 is opened to flow TiCl ₄ to the vent line 610. As a result, TiCl ₄ can always be stably supplied to the processing chamber. At this time, the APC valve 243 of the exhaust pipe 231 is kept open, and the inside of the processing chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246 to remove residual TiCl ₄ from the processing chamber 201. At this time, if an inert gas such as N ₂ is supplied into the processing chamber 201, the effect of removing residual TiCl ₄ is further enhanced.

(Step 13)
In step 13, NH ₃ is flowed. NH ₃ flows through the gas supply pipe 320 and carrier gas (N ₂ ) flows through the carrier gas supply pipe 520. The valve 324 of the gas supply pipe 320, the switching valve 348, the valve 524 of the carrier gas supply pipe 520, and the APC valve 243 of the exhaust pipe 231 are all opened, and the switching valve 346 of the cleaning gas supply pipe 340 is closed. The carrier gas flows from the carrier gas supply pipe 520 and the flow rate is adjusted by the MFC 522. NH ₃ flows from the gas supply pipe 320, is adjusted in flow rate by the MFC 322, mixes the adjusted carrier gas, and is exhausted from the exhaust pipe 231 while being supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420. . When flowing NH ₃ , the APC valve 243 is appropriately adjusted to maintain the pressure in the processing chamber 201 in the range of 50 to 1000 Pa, for example, 60 Pa. The supply flow rate of NH3 controlled by the MFC 322 is 1 to 10 slm. The time for exposing the wafer 200 to NH ₃ is 10 to 30 seconds. The temperature of the heater 207 at this time is a predetermined temperature in the range of 300 ° C. to 550 ° C., and is set to 450 ° C., for example.

  At the same time, when the opening / closing valve 514 and the switching valve 338 are opened from the carrier gas supply pipe 510 connected in the middle of the gas supply pipe 310 to flow an inert gas, it is possible to prevent NH3 from flowing into the TiCl4 side.

By supplying NH ₃ , the Ti-containing layer chemically adsorbed on the wafer 200 and NH ₃ undergo a surface reaction (chemical adsorption), and a titanium nitride film is formed on the wafer 200.

(Step 14)
In step 14, the valve 324 of the gas supply pipe 320 is closed to stop the supply of NH ₃ . Further, the APC valve 243 of the exhaust pipe 231 is kept open, and the processing chamber 201 is evacuated to 20 Pa or less by the vacuum pump 246 to remove residual NH ₃ from the processing chamber 201. At this time, if inert gas such as N ₂ is supplied to the processing chamber 201 from the gas supply pipe 320 that is an NH ₃ supply line and the gas supply pipe 310 that is a TiCl ₄ supply line and is purged, residual NH ₃ The effect of eliminating is further enhanced.

  The above steps 11 to 14 are defined as one cycle, and a titanium nitride film having a predetermined thickness is formed on the wafer 200 by using the ALD method by performing at least once. In this case, in each cycle, as described above, the atmosphere constituted by the Ti-containing source gas in Step 11 and the atmosphere constituted by the nitriding gas in Step 13 are not mixed in the processing chamber 201. Note that a film is formed on the substrate.

  The film thickness of the titanium nitride film by the ALD method is preferably adjusted to about 1 to 5 nm by controlling the number of cycles. The titanium nitride film formed at this time is a smooth continuous film having a smooth surface.

(2) Second film formation process (simultaneous supply process)
In the second film formation step, an example in which a film is formed on a substrate using a CVD method will be described.

FIG. 8 shows a film forming sequence of the titanium nitride film in the second film forming process according to the present embodiment. Deposition of a titanium nitride film by the CVD method, the controller 280, the valve, MFC, controls the vacuum pump or the like, as a gas phase reaction (CVD reaction) occurs, TiCl ₄ and NH to allow timing of the simultaneous presence ₃ is supplied into the processing chamber 201. A specific film forming sequence will be described below.

In this step, TiCl ₄ and NH ₃ are flowed simultaneously. TiCl _{4 is} passed through the gas supply pipe 310 and carrier gas (N ₂ ) is passed through the carrier gas supply pipe 510. The valves 314, 317, and 319 of the gas supply pipe 310, the switching valve 338, the valve 514 of the carrier gas supply pipe 510, and the APC valve 243 of the exhaust pipe 231 are opened, and the switching valve 336 of the cleaning gas supply pipe 330 and the vent line 610 are opened. Valve 614 is closed. The carrier gas flows from the carrier gas supply pipe 510 and the flow rate is adjusted by the MFC 512. TiCl 4 is vaporized and supplied from the liquid tank 315 in a bubbling manner, the flow rate is adjusted by the MFC 318, the flow-adjusted carrier gas is mixed, and supplied into the processing chamber 201 from the gas supply hole 410 a of the nozzle 410.

In addition, NH _{3 is} passed through the gas supply pipe 320 and carrier gas (N ₂ ) is passed through the carrier gas supply pipe 520. The valve 324 of the gas supply pipe 320, the switching valve 348, the valve 524 of the carrier gas supply pipe 520, and the APC valve 243 of the exhaust pipe 231 are all opened, and the switching valve 346 of the cleaning gas supply pipe 340 is closed. The carrier gas flows from the carrier gas supply pipe 520 and the flow rate is adjusted by the MFC 522. NH ₃ flows from the gas supply pipe 320, is adjusted in flow rate by the MFC 322, mixes the adjusted carrier gas, and is supplied into the processing chamber 201 from the gas supply hole 420 a of the nozzle 420.

Then, TiCl ₄ and NH ₃ supplied into the processing chamber 201 are exhausted from the exhaust pipe 231. At this time, the APC valve 243 is appropriately adjusted to maintain the pressure in the processing chamber 201 within a range of 10 to 30 Pa, for example, 20 Pa. The supply amount of TiCl ₄ controlled by the MFC 318 is 0.1 to 1.0 g / min. The supply amount of NH ₃ controlled by the MFC 322 is 0.1 to 0.5 slm. The time for exposing the wafer 200 to TiCl ₄ and NH ₃ is until a desired film thickness is reached. At this time, the heater 207 temperature is set such that the wafer temperature is in the range of 300 ° C. to 550 ° C., for example, 450 ° C.

As in the first film formation step using the ALD method, in the second film formation configuration, it is exemplified that the supply amount of TiCl ₄ is controlled by the MFC 318. As long as it is possible to suppress variations in film quality, various aspects may be provided. For example, the supply amount of TiCl ₄ may be controlled using both the MFC 312 and the MFC 318, and the control of the MFC 318 may be prioritized.

  Here, the first film formation step and the second film formation step are set to have substantially the same heater temperature, and in this case, the temperature is set to 450 ° C. By performing the processing in situ at substantially the same temperature in this way, there is an effect of shortening the processing time and increasing the productivity of the semiconductor device. On the other hand, it is also possible to change the temperature positively to obtain the optimum conditions for the ALD method or the CVD method. For example, the processing temperature by the ALD method can be made lower than the processing temperature by the CVD method.

At this time, the gas flowing in the processing chamber 201 is an inert gas such as TiCl ₄ and NH ₃ and N ₂ and Ar, and TiCl ₄ and NH ₃ cause a gas phase reaction (thermal CVD reaction), A thin film having a predetermined thickness is deposited (deposited) on the surface of the wafer 200 and the underlying film.

When a preset processing time has elapsed, the valve 314 of the gas supply pipe 310 and the valve 324 of the gas supply pipe 320 are closed, and the supply of TiCl ₄ and NH ₃ is stopped. At this time, the APC valve 243 of the exhaust pipe 231 is kept open, and the inside of the processing chamber 201 is evacuated to 20 Pa or less by the vacuum pump 246 to remove residual TiCl 4 and NH 3 from the processing chamber 201. At this time, if the valve 514 of the gas supply pipe 510 and the valve 524 of the gas supply pipe 520 are opened and an inert gas is supplied into the processing chamber 201, the effect of further removing residual TiCl ₃ and NH ₃ is enhanced.

When a film forming process for forming a titanium nitride film having a predetermined thickness is performed, an inert gas such as N ₂ gas is exhausted while being supplied into the process chamber 201, thereby purging the inside of the process chamber 201 with the inert gas. (Gas purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure). Thereafter, the seal cap 219 is lowered by the boat elevator 115, the lower end of the reaction tube 203 is opened, and the processed wafer 200 is supported by the boat 217 from the lower end of the reaction tube 203 to the outside of the reaction tube 203. Unload (boat unload). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge). This completes one film formation process (batch process).

  The film thickness of the titanium nitride film by the CVD method is adjusted according to the supply time. The longer the supply time, the thicker the film thickness, and the shorter the supply time, the thinner the film thickness.

Second Embodiment
Next, a substrate processing apparatus 101 according to a second embodiment of the present invention will be described with reference to FIG. FIG. 9 is an enlarged detailed view showing an example of a configuration centering on the first gas supply system according to the second embodiment of the present invention. In FIG. 9, the same reference numerals are given to the same portions as those in FIG. 4 and the description thereof will be omitted as appropriate.

  In the first embodiment, the source gas is configured to be generated by a bubbling method, but in the second embodiment, the source gas is configured to be generated by a heating method. That is, as shown in FIG. 9, around the liquid source tank 315, a heater 350 for heating the liquid source tank 315 and the internal source liquid is provided.

  The heater 350 is an example of the “gasification mechanism” according to the present invention, and controls the vapor pressure of the raw material liquid stored in the liquid raw material tank 315 by heating to generate the raw material gas by vaporizing the raw material liquid. It is comprised so that it can be made. That is, in the second embodiment, a liquid or solid metal raw material is made into a gas state by using evaporation by positive heating instead of a bubbling method. At this time, neither the downstream end of the carrier gas supply pipe 310a nor the upstream end of the raw material gas supply pipe 310b is immersed in the raw material liquid stored in the liquid raw material tank 315.

  According to this configuration, in the second embodiment, similarly to the first embodiment, the controller 280 controls the MFC 318, so that the metal raw material (that is, the metal raw material in a gas state vaporized by the heating of the heater 350) is obtained. ) Can be controlled, and variations in film formation speed and film quality of the growing metal thin film can be suppressed.

  In the second embodiment of the present invention, the heater 350 is provided only around the liquid source tank 315. However, as long as it is possible to prevent re-liquefaction of the source gas, there are various modes. You can do it. For example, the heater 350 may be provided around the processing chamber 201, the source gas supply pipe 310b, the nozzle 410, the vent line 610, the exhaust pipe 231 and the like.

<Third Embodiment>
Next, a substrate processing apparatus 101 according to a third embodiment of the present invention will be described with reference to FIG. FIG. 10 is an enlarged detailed view showing an example of a configuration centering on the first gas supply system according to the third embodiment of the present invention. In FIG. 10, parts that are the same as those in FIGS. 4 and 9 are given the same reference numerals, and the description thereof is omitted as appropriate.

  The source gas is configured so that the source gas is generated by the bubbling method in the first embodiment and is generated by the heating method in the second embodiment. However, in the third embodiment, the source gas is liquid. It is configured to be generated by the vaporization unit 360 on the downstream side of the raw material tank 315.

  As shown in FIG. 10, the source gas supply pipe 310b is provided with a valve 317, a liquid MFC 362, a vaporizer 360, a valve 314, and a switching valve 338 in order from the upstream side. The vaporization unit 360 is an example of the “gasification mechanism” according to the present invention, and controls the vapor pressure of the raw material liquid supplied from the liquid raw material tank 315 to vaporize the raw material liquid and generate the raw material gas. Is configured to be possible. At this time, the upstream end of the source gas supply pipe 310b is immersed in the source liquid stored in the liquid source tank 315, and the downstream end of the carrier gas supply pipe 310a is stored in the liquid source tank 315. Not immersed in the raw material liquid.

  A liquid MFC 362, which is a part of the raw material gas supply pipe 310b and is an example of the “liquid flow rate control mechanism” according to the present invention, is downstream of the liquid raw material tank 315 and upstream of the vaporization unit 360. Is provided. By controlling the liquid MFC 362 and the controller 280, the flow rate of the raw material liquid can be controlled.

  According to this configuration, in the third embodiment, as in the first and second embodiments, the controller 280 controls the vaporization unit 360 and the liquid MFC 362, so that the metal raw material (that is, the liquid raw material tank 315 is removed). It is possible to control the supply amount of the supplied metal raw material in a liquid state, and to suppress the film formation speed and film quality variation of the growing metal thin film.

<Modification>
In the first, second, and third embodiments described above, a mode in which a film including an element including a raw material molecule as a constituent element is formed on a substrate by using a reaction of two kinds of raw materials is exemplified. However, as a modification of the first, second, and third embodiments, a reaction of three or more kinds of raw materials may be used. For example, a ternary source gas for forming a film of TiON (titanium oxynitride) or the like may be used. At this time, in the first film formation process (alternate supply process), TiCl ₄ supply, purge, NH ₃ supply, purge, O ₂ supply, and purge are set as one cycle, and a predetermined film thickness is formed on the wafer 200 using the ALD method. A titanium oxynitride film is formed.

[Appendix]
Below, the preferable aspect which concerns on this embodiment is appended.

[Appendix 1]
Supply a liquid or solid metal material to the reaction chamber and decompose the metal material by using at least one of heat, plasma, light, and electromagnetic waves, or react with other materials to form a conductive thin film on the substrate. In the thin film forming method to be formed, a thin film forming apparatus comprising: a bubbling mechanism for generating vapor of the metal material or a vaporizing mechanism by heating and a flow control mechanism in the middle of a pipe connecting the reaction chamber.

[Appendix 2]
Supplying a liquid or solid metal material to the reaction chamber and decomposing the metal material by using at least one of heat, plasma, light, and electromagnetic waves, or reacting other materials to form a conductive thin film on the substrate In the thin film forming method to be formed, the metal material is melted by heating or vaporized after controlling the flow rate of the liquid metal material or the solvent in a state dissolved in the solvent, and the metal material is supplied to the reaction chamber A thin film forming apparatus.

[Appendix 3]
The film forming apparatus according to appendix 1 or 2, further comprising a valve for controlling supply in order to form a thin film by supplying at least one of raw materials for reaction into the reaction chamber in a pulse shape. A thin film forming apparatus and a film forming method using the same.

[Appendix 4]
Supply a liquid or solid metal material to the reaction chamber and decompose the metal material by using at least one of heat, plasma, light and electromagnetic waves, or react with other materials to form a conductive thin film on the substrate. In the thin film forming method to be formed, a carrier gas introduction pipe having a bubbling mechanism for generating vapor of the metal material or a vaporizing mechanism by heating and connected to the bubbling mechanism or the vaporizing mechanism by heating, and vaporization A thin film deposition apparatus, characterized in that a flow rate control mechanism is provided in both pipes for guiding a mixture of the prepared material and a carrier gas to a reaction chamber.

[Appendix 5]
The thin film forming apparatus according to any one of appendices 1 to 4, wherein the thin film forming apparatus is a batch processing apparatus that simultaneously processes four or more substrates in a reaction chamber.

  The substrate processing apparatus and thin film forming method according to the present invention include an apparatus for processing a substrate, particularly a substrate processing apparatus for forming a conductive thin film using a liquid or solid metal raw material, and a step of forming a metal thin film on the substrate. It can be used for the thin film forming method provided.

DESCRIPTION OF SYMBOLS 101 Substrate processing apparatus 200 Wafer 201 Processing chamber 202 Processing furnace 203 Reaction tube 217 Boat 280 Controller 310 Gas supply pipe 310a Carrier gas supply pipe 310b Raw material gas supply pipe 312 MFC
314 Valve 315 Liquid material tank 317 Valve 318 MFC
319 Valve 350 Heater 360 Vaporizer 362 Liquid MFC

Claims (2)

A processing container for containing a substrate;
A raw material tank for storing liquid raw material or solid raw material;
A raw material supply path for supplying a raw material from the raw material tank to the processing container;
A gasification mechanism which is provided in the raw material supply path and brings a liquid raw material or a solid raw material into a gas state;
A flow rate control mechanism provided between the gasification mechanism and the processing vessel in the raw material supply path;
A control unit for controlling the gasification mechanism and the flow rate control mechanism;
Have
The control unit is configured to control the flow rate of the source gas by controlling the gasification mechanism and the flow rate control mechanism when supplying the liquid source or the solid source in a gas state to the processing container. . A processing container for containing a substrate;
A raw material tank for storing liquid raw material or solid raw material;
A raw material supply path for supplying a raw material from the raw material tank to the processing container;
A liquefaction mechanism that is provided in the raw material supply path and is in a liquid state by melting a liquid raw material or a solid raw material or dissolving it in a solvent;
A gasification mechanism provided in the raw material supply path and provided between the liquefaction mechanism and the processing vessel;
A liquid flow rate control mechanism provided between the liquefaction mechanism and the processing vessel in the raw material supply path;
A controller that controls the liquefaction mechanism, the gasification mechanism, and the liquid flow rate control mechanism;
Have
The control unit controls the gasification mechanism after controlling the flow rate of the raw material in the liquid state by controlling the liquefaction mechanism and the liquid flow rate control mechanism when supplying the liquid source or the solid source to the processing container. A substrate processing apparatus configured to gasify the liquid state raw material and supply the gas state raw material to the processing container.

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