KR20080108040A - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus is provided to uniform the thickness of film to form on the substrate by stabilizing the supply quantity of the evaporation gas of the liquid raw material to the process chamber. A substrate processing apparatus comprises the process chamber(201), the heating unit, and the exhaust unit. The process chamber processes the substrate. The heating unit heats up the substrate. The exhaust unit exhausts the mood within the process chamber. The first liquid raw material tank and the second liquid raw material tank undercurrent the liquid raw material. The first carrier gas supply line supplies the first carrier gas to the first liquid raw material tank. The first material supply line receives the supply of the first carrier gas about the first liquid raw material tank and transmits the liquid raw material of the first liquid raw material tank to the second liquid raw material tank. The second carrier gas supply line supplies the second carrier gas to the second liquid raw material tank. The flow rate control apparatus controls the flow rate of the second carrier gas circulating the second carrier gas supply line middle. The feedback device feeds back the detection result of the flow rate detector in the flow rate control apparatus.

Description

Substrate Processing Unit {SUBSTRATE PROCESSING APPARATUS}

TECHNICAL FIELD This invention relates to a substrate processing apparatus. Specifically, It is related with the substrate processing apparatus which processes a board | substrate using the vaporization gas of a liquid raw material.

As an example of this kind of substrate processing apparatus, a so-called bubbling method of supplying a carrier gas to a liquid raw material tank storing a liquid raw material and supplying a vaporization gas of the liquid raw material to a processing chamber. The device is known. In the said apparatus, the supply amount to the process chamber of the vaporization gas of a liquid raw material may be controlled by the supply amount of the carrier gas supplied to a liquid raw material tank, and especially the supply amount of the carrier gas to the temperature sensor provided in the liquid raw material tank. It may control by the detection result of the temperature of the liquid raw material by the same.

In this case, even if the supply amount of the carrier gas can be controlled, the supply amount of the vaporized gas of the liquid raw material cannot be grasped, so that the supply amount of the vaporized gas of the liquid raw material is not directly controlled, It is difficult to stabilize the supply amount to the processing chamber. Therefore, even if the supply of the vaporized gas of the liquid raw material becomes unstable due to any cause (blockage of the pipe by the secondary product, etc.), it cannot be detected, and this causes the above-mentioned in the piping through which the vaporized gas flows. It is assumed that the vaporized gas is liquefied again, particles are generated, and clogging occurs not only in the pipe but also in a nozzle for gas supply provided in the processing chamber.

On the other hand, the temperature sensor (sensing part) which detects the temperature of the liquid raw material is fixedly installed in the predetermined position of the liquid raw material tank, and when the liquid level fluctuates (decreases) according to the usage amount of the liquid raw material, The temperature cannot be detected accurately. At this time, even if it tries to control the supply amount of carrier gas correctly, the precision cannot be improved, and it becomes difficult to stabilize even the supply amount of the vaporization gas of a liquid raw material to the process chamber, As a result, the film thickness of the film to be formed in a board | substrate is made uniform. Can't improve

The main object of the present invention is to provide a substrate processing apparatus capable of stabilizing the supply of a vaporized gas of a liquid raw material to a processing chamber.

According to the invention,

A processing chamber for processing a substrate,

A heating unit for heating the substrate,

In the substrate processing apparatus provided with the exhaust unit which exhausts the atmosphere in the said process chamber,

A first liquid raw material tank and a second liquid raw material tank for storing the liquid raw material,

A first carrier gas supply line for supplying a first carrier gas to the first liquid raw material tank;

A first raw material supply line receiving the supply of the first carrier gas to the first liquid raw material tank and forcing the liquid raw material of the first liquid raw material tank into the second liquid raw material tank;

A second carrier gas supply line for supplying a second carrier gas to the second liquid raw material tank;

A second raw material supply line receiving the supply of the second carrier gas to the second liquid raw material tank and supplying a vaporization gas of the liquid raw material of the second liquid raw material tank to the processing chamber;

A flow rate control device that controls a flow rate of the second carrier gas flowing through the second carrier gas supply line;

A flow rate detection device for detecting a flow rate of the vaporized gas flowing in the second raw material supply line;

And a feedback device for feeding back a detection result of the flow rate detection device to the flow rate control device,

The second liquid raw material tank has a smaller inner volume than the first liquid raw material tank, and the second liquid raw material tank stores the liquid raw material required for one treatment. Is provided.

 According to the present invention, since the feedback device feeds back the detection result of the detection device to the flow rate control device, it is possible to actually grasp the supply amount of the vaporized gas of the liquid raw material, and fluctuations in the liquid level of the liquid raw material of the first and second liquid raw material tanks. Irrespective of this, the supply amount of the inert gas can be accurately controlled, and the supply amount of the vaporized gas of the liquid raw material to the processing chamber can be stabilized. For this reason, the vaporization gas of a liquid raw material can be liquefied again, particle | grains generate | occur | produce, or clogging | occurrence | production from the nozzle for gas supply provided in the process chamber, etc. can be suppressed, and the uniformity of the film thickness of the film | membrane to be formed in a board | substrate You can also improve.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

The substrate processing apparatus according to the present embodiment is configured as an example of a semiconductor manufacturing apparatus used for manufacturing semiconductor device integrated circuits [IC (Integrated Circuits)]. In the following description, the case where the vertical apparatus which heat-processes a board | substrate etc. is used as an example of a substrate processing apparatus is demonstrated.

As shown in FIG. 1, in the substrate processing apparatus 101, the cassette 110 which accommodated the wafer 200 which becomes an example of a board | substrate is used, and the wafer 200 is made of silicon, etc. It is made of material. The substrate processing apparatus 101 includes a box body 111, and a cassette stage 114 is provided inside the box body 111. The cassette 110 is carried in on the cassette stage 114 by an in-factory transport apparatus (not shown), or is carried out on the cassette stage 114.

The cassette stage 114 is mounted by the in-factory transport apparatus so that the wafer 200 in the cassette 110 maintains the vertical posture and the wafer entrance and exit of the cassette 110 faces upward. In the cassette stage 114, the cassette 110 is rotated rightward to the rear of the box body 111 and rotated 90 ° in the vertical direction, and the wafer 200 in the cassette 110 is in a horizontal position, and the wafer of the cassette 110 is rotated. The doorway is configured to be operable to face the back of the box body 111.

The cassette shelf 105 is provided in the substantially center part of the front-back direction in the box body 111, and the cassette shelf 105 is comprised so that the several cassette 110 may be stored in multiple rows | stage. The cassette shelf 105 is provided with the movable mounting shelf 123 in which the cassette 110 to be conveyed by the wafer movement mounting mechanism 125 is accommodated.

A preliminary cassette shelf 107 is provided above the cassette stage 114, and is configured to store the cassette 110 preliminarily.

The cassette conveyance apparatus 118 is provided between the cassette stage 114 and the cassette shelf 105. The cassette conveyance apparatus 118 is comprised from the cassette elevator 118a which can be lifted and hold | maintained the cassette 110, and the cassette conveyance mechanism 118b as a conveyance mechanism. The cassette conveying apparatus 118 is a cassette (114) between the cassette stage 114, the cassette shelf 105, and the spare cassette shelf 107 by the continuous operation | movement of the cassette elevator 118a and the cassette conveyance mechanism 118b. And 110).

Behind the cassette shelf 105, the wafer movement mounting mechanism 125 is provided. The wafer movement mounting mechanism 125 includes a wafer movement mounting apparatus 125a capable of rotating or linearly rotating the wafer 200 in a horizontal direction, and a wafer movement mounting apparatus elevator for elevating the wafer movement mounting apparatus 125a. It consists of 125b. The wafer movement mounting apparatus 125a is provided with a tweezer 125c for picking up the wafer 200. The wafer movement mounting apparatus 125 uses the tweezers 125c as a mounting portion of the wafer 200 by a continuous operation between the wafer movement mounting apparatus 125a and the wafer movement mounting apparatus elevator 125b, and the wafer 200 is mounted on a boat ( It is configured to charge the boat 217 or to discharging from the boat 217.

Above the rear part of the box body 111, a processing furnace 202 is provided to heat-treat the wafer 200, and the lower end of the processing furnace 202 is configured to be opened and closed by a furnace inlet shutter 147. have.

Below the process furnace 202, the boat elevator 115 which raises and lowers the boat 217 with respect to the process furnace 202 is provided. An arm 128 is connected to the platform of the boat elevator 115, and a seal cap 219 is horizontally provided on the arm 128. The seal cap 219 is configured to support the boat 217 vertically and to close the lower end of the processing furnace 202.

The boat 217 is provided with a plurality of holding members, and configured to hold each of the plurality of wafers 200 (for example, about 50 to 150 sheets) horizontally while being aligned in a vertical direction with its center aligned. It is.

Above the cassette shelf 105, the clean unit 134a which supplies clean air which is a clean atmosphere is provided. The clean unit 134a is comprised from a supply fan and a dustproof filter, and is comprised so that clean air may flow in the inside of the box body 111. As shown in FIG.

The clean end 134b which supplies clean air is provided in the left end part of the box body 111. As shown in FIG. The clean unit 134b is also composed of a supply fan and a dustproof filter, and is configured to allow clean air to flow around the wafer transfer device 125a, the boat 217 and the like. The clean air is exhausted to the outside of the box body 111 after passing through the vicinity of the wafer movement mounting apparatus 125a, the boat 217 and the like.

Next, the main operation of the substrate processing apparatus 101 will be described.

When the cassette 110 is loaded onto the cassette stage 114 by an in-factory transport device (not shown), the cassette 110 is configured such that the wafer 110 maintains a vertical posture on the cassette stage 114. The wafer entrance and exit of 110 is mounted to face upward. After that, in the cassette 110, the cassette stage 114 causes the wafer 200 in the cassette 110 to be in a horizontal position, and the wafer entrance and exit of the cassette 110 faces the back of the box body 111. It rotates rightward to the back of the box body 111, and it rotates 90 degrees longitudinally.

After that, the cassette 110 is automatically conveyed by the cassette conveying apparatus 118 to the designated shelf position of the cassette shelf 105 to the spare cassette shelf 107, and is temporarily stored, and then temporarily stored therein. From 105 to the spare cassette shelf 107, it is carried by the cassette conveying apparatus 118 to the movement mounting shelf 123, or is conveyed to the direct movement mounting shelf 123. As shown in FIG.

When the cassette 110 is moved to the movable mounting shelf 123, the wafer 200 is picked up from the cassette 110 by the tweezers 125c of the wafer movement mounting apparatus 125a through the wafer entrance and the boat 217. Is charged). The wafer movement mounting apparatus 125a which has exchanged the wafer 200 to the boat 217 returns to the cassette 110 and loads the subsequent wafer 110 into the boat 217.

When the predetermined number of wafers 200 are loaded in the boat 217, the furnace entrance shutter that closed the lower end of the processing furnace 202 is opened, and the lower end of the processing furnace 202 is opened. Thereafter, the boat 217 holding the wafer 200 group is carried in (loaded) into the processing furnace 202 by the lifting operation of the boat elevator 115, and the lower portion of the processing furnace 202 is sealed. Closed by a cap 219.

After loading, an arbitrary heat treatment is performed on the wafer 200 in the processing furnace 202. After the heat treatment, the wafer 200 and the cassette 110 are carried out of the box body 111 in the reverse order described above.

As shown in FIG. 2, the processing furnace 202 is provided with a heater 207 that is a heating device. Inside the heater 207, a reaction tube 203 is provided as a reaction vessel for processing the wafer 200 as a substrate. At the lower end of the reaction tube 203, a manifold 209 (ring flange) made of, for example, stainless steel or the like is provided via an O-ring 220. I'm hooked. The manifold 209 is fixed to the heater base 251 as a holding member. The lower end opening of the manifold 209 is hermetically closed by the seal cap 219 which is a cover body via the O-ring 220. In the present embodiment, the processing furnace 202 is formed of at least the heater 207, the reaction tube 203, the manifold 209, and the seal cap 219. In the present embodiment, at least, the processing chamber 201 is formed of the reaction tube 203, the manifold 209, and the seal cap 219.

The boat cap 219 is provided in the seal cap 219 via the boat support 218, and the boat support 218 is a holding body which holds the boat 217. As shown in FIG. The boat 217 is inserted into the processing chamber 201. In the boat 217, a plurality of wafers 200 to be batch processed are stacked in multiple stages in the vertical direction in FIG. 2 while maintaining a horizontal posture. The heater 207 heats the wafer 200 inserted into the process chamber 201 to a predetermined temperature.

In the processing chamber 201, three source gas supply pipes 232a, 232b, and 232e for supplying a plurality of types of source gases (three types in this embodiment) are provided. The source gas supply pipes 232a, 232b, and 232e are provided through the lower part of the manifold 209. The source gas supply pipe 232a and the source gas supply pipe 232b are joined to and communicate with one porous nozzle 233a in the processing chamber 201. Two source gas supply pipes 232a and 232b and a porous nozzle 233a form a confluence type gas supply nozzle 233 described later.

The source gas supply pipe 232e independently communicates with another porous nozzle 234a. The separation type gas supply nozzle 234 described later is formed by one source gas supply pipe 232e and the porous nozzle 234a. In the processing chamber 201, two gas supply nozzles, a joining type gas supply nozzle 233 and a separation type gas supply nozzle 234, are provided.

The upper portion of the confluence type gas supply nozzle 233 extends to a region equal to or higher than the decomposition temperature of the TMA supplied from the source gas supply pipe 232b in the processing chamber 201. However, the portion where the source gas supply pipe 232b joins the source gas supply pipe 232a in the processing chamber 201 is an area below the decomposition temperature of the TMA, and the temperature near the wafer 200 and the wafer 200. It is an area of lower temperature.

The source gas supply pipe 232a is provided with a mass flow controller 241a which is a flow control means and a valve 243a which is an opening / closing valve. In the present embodiment, the source gas O ₃ is supplied to the process chamber 201 through the confluence type gas supply nozzle 233 from the source gas supply pipe 232a via the mass flow controller 241a and the valve 243a. . An inert gas supply pipe 232d is connected downstream from the valve 243a of the source gas supply pipe 232a, and a valve 254 is provided in the inert gas supply pipe 232d.

The source gas supply pipe 232b is connected to a source gas supply source 300 serving as a source of source gas. In this embodiment, the source gas TMA is supplied from the source gas supply source 300 to the process chamber 201 through the confluence type gas supply nozzle 233. In the source gas supply pipe 232b, a heater 281 is provided from the source gas supply source 300 (mass flow controller 344 of the source gas) to the manifold 209, and the source gas supply pipe 232b is connected to 50 to 50. It is kept at 60 degreeC. In this embodiment, a known ribbon heater in which a heater wire is assembled to glass cloth is used as the heater 281, and the ribbon heater is wound around the raw material gas supply pipe 232b. have. An inert gas supply pipe 232c is connected to the source gas supply pipe 232b, and a valve 253 is provided in the inert gas supply pipe 232c.

The source gas supply pipe 232e is connected to a source gas supply source 500 serving as a source of source gas. In this embodiment, the source gas TEMAH is supplied from the source gas supply source 500 to the processing chamber 201 through the separation type gas supply nozzle 234. The source gas supply pipe 232e is provided with a heater 282 from the source gas supply source 500 (mass flow controller 544) to the manifold 209, and the source gas supply pipe 232e is set to 130 ° C. Keeping up. In this embodiment, a ribbon heater is used as the heater 282 similarly to the heater 281, and the ribbon heater 282 is wound around the source gas supply pipe 232e. An inert gas supply pipe 232f is connected to the source gas supply pipe 232e, and a valve 257 is provided in the inert gas supply pipe 232f.

As shown in FIG. 3, the source gas supply source 300 includes an inert gas supply source 310 serving as a source of inert gas as a carrier gas, a liquid raw material tank 320 storing liquid raw materials, and a liquid raw material tank 320. The liquid raw material supply apparatus 330 which supplies a liquid raw material to the (), and the liquid raw material tank 340 which receives the liquid raw material from the liquid raw material tank 320 and stores the said liquid raw material are provided.

One end of the inert gas supply pipe 312 is connected to the inert gas supply source 310, and the other end of the inert gas supply pipe 312 is connected to the liquid raw material tank 320. The other end of the inert gas supply pipe 312 is immersed in the liquid raw material of the liquid raw material tank 320. The inert gas supply pipe 312 is provided with a mass flow controller 314, a valve 316, and a hand valve 318 for controlling the flow rate of the inert gas.

One end of the liquid raw material supply pipe 322 is connected to the liquid raw material tank 320, and the other end of the liquid raw material supply pipe 322 is connected to the liquid raw material tank 340. One end of the liquid raw material supply pipe 322 is immersed in the liquid raw material of the liquid raw material tank 320, and the other end of the liquid raw material supply pipe 322 is also immersed in the liquid raw material of the liquid raw material tank 340. The liquid raw material supply pipe 322 is provided with a hand valve 324 and a valve 326.

Two bypass pipes 400 and 410 are connected between the inert gas supply pipe 312 and the liquid raw material supply pipe 322. One end of the bypass pipe 400 is connected between the mass flow controller 314 of the inert gas supply pipe 312 and the valve 316, and the other end of the bypass pipe 400 is a hand valve 324 of the liquid raw material supply pipe 322. ) And the valve 326 are connected. The bypass pipe 400 is provided with a valve 402. One end of the bypass pipe 410 is connected between the valve 316 of the inert gas supply pipe 312 and the hand valve 318, and the other end of the bypass pipe 410 has a hand valve 324 of the liquid raw material supply pipe 322. And the valve 326 are connected. The bypass pipe 410 is provided with a valve 412.

One end of the liquid raw material supply pipe 331 is connected to the liquid raw material supply device 330, and the other end of the liquid raw material supply pipe 331 is connected to the liquid raw material tank 320. The liquid raw material supply pipe 331 is provided with a hand valve 332 and valves 333 and 334. An inert gas supply pipe 335 is connected between the valve 333 and the valve 334 of the liquid raw material supply pipe 331. The inert gas supply pipe 335 is provided with a hand valve 336 and a valve 337.

The liquid raw material tank 320 is provided with a residual amount monitoring sensor 338 for monitoring the residual amount of the liquid raw material. In the source gas supply source 300, the liquid raw material is automatically supplied from the liquid raw material supply device 330 to the liquid raw material tank 320 based on the detection result of the remaining amount monitoring sensor 338, and the liquid raw material tank 320 is provided. ) Always stores a certain amount of liquid raw material.

The liquid raw material tank 340 has a smaller internal volume than the liquid raw material tank 320, and the amount of storage of the liquid raw material is smaller than that of the liquid raw material tank 320. In detail, the liquid raw material tank 340 stores the liquid raw material required for one batch process.

One end of the source gas supply pipe 232b is connected to the liquid raw material tank 340, and the other end of the source gas supply pipe 232b is connected to the porous nozzle 233a. One end of the raw material gas supply pipe 232b communicates with the upper space of the liquid raw material tank 340 (not immersed in the liquid raw material). The mass flow controller 344 and the valve 346 are provided in the source gas supply pipe 232b. The mass flow controller 344 is a heatable mass flow meter having a high temperature resistant flow sensor, a piezo valve, or the like. The mass flow controller 344 detects the vaporization gas flow rate of the liquid raw material flowing through the source gas supply pipe 232b. It is possible to control, heat the vaporized gas, and the like.

The source gas exhaust pipe 350 is connected between the mass flow controller 344 of the source gas supply pipe 232b and the valve 346. Valves 352 and 354 are provided in the source gas exhaust pipe 350.

On the other hand, the source gas supply source 500 has the same structure as the source gas supply source 300, and in this embodiment, the code | symbol written in parentheses is attached | subjected about each of those members in FIG. 3, and the description is abbreviate | omitted.

In the above source gas supply sources 300 and 500, the source gas supply source 300 uses TMA [Al (CH ₃ ) ₃ , trimethyl aluminum] as an example of a liquid raw material. In the source gas supply source 500, As an example of a liquid raw material, TEMAH [Hf (NCH ₃ C ₂ H ₅ ) ₄ , tetrakis (N-ethyl-N-methyl amino) hafnium] is used. TMA and TEMAH are both liquid at room temperature.

As shown in FIG. 2, the gas exhaust pipe 231 for exhausting gas is connected to the processing chamber 201. The valve 243d is provided in the gas exhaust pipe 231. The gas exhaust pipe 231 is connected to the vacuum pump 246 which is an exhaust device via the valve 243d, and the internal atmosphere of the process chamber 201 is evacuated by the operation of the vacuum pump 246. The valve 243d is an open / close valve that can open and close the valve to stop vacuum evacuation / vacuum exhaust of the processing chamber 201, and adjust the pressure by adjusting the valve opening degree.

The joining type gas supply nozzle 233 and the separation type gas supply nozzle 234 are provided along the loading direction of the wafer 200 from the lower part to the upper part of the process chamber 201. The joining type gas supply nozzle 233 is a nozzle which the source gas supply pipes 232a and 232b join in the lower part of the process chamber 201, and communicate with one porous nozzle 233a as mentioned above.

The separation type gas supply nozzle 234 is an independent nozzle in which the source gas supply pipe 232e communicates with one porous nozzle 234a at the lower part of the processing chamber 201. The porous nozzle 233a of the confluence type gas supply nozzle 233 is provided with a gas supply hole for supplying a plurality of gases, and the gas is also supplied to the porous nozzle 234a of the separation type gas supply nozzle 234 in the same manner. Gas supply holes are provided.

In the center portion of the reaction tube 203, a boat 217 for mounting a plurality of wafers 200 in multiple stages at equal intervals is provided. The boat 217 can enter and exit the reaction tube 203 by the boat elevator 115 (refer FIG. 1). Moreover, the boat rotation mechanism 267 for rotating the boat 217 is provided in the lower part of the boat support 218 to improve the uniformity of a process. In this embodiment, by rotating the boat rotating mechanism 267, the boat 217 held by the boat support 218 can be rotated.

The controller 280 that is a control unit (control means) includes a mass flow controller 241a, a valve 243a, valves 253, 254, and 257, a valve 243d, a heater 207, a vacuum pump 246, a boat. It is connected to the rotating mechanism 267, the boat elevator 115, the heaters 281 and 282. In this embodiment, the controller 280 controls the flow rate of the mass flow controller 241a, the opening and closing operations of the valves 243a, the valves 253, 254, and 257, the opening and closing and pressure adjustment operations of the valve 243d, and the heater. Control of temperature of 207, start / stop of the vacuum pump 246, control of the rotation speed of the boat rotating mechanism 267, lift operation of the boat elevator 115, control of the temperature of the heaters 281 and 282, etc. Is done.

The controller 280 is also connected to the source gas supply source 300. In detail, as shown in FIG. 4, the controller 280 includes a mass flow controller 314, valves 316, 326, 333, 334, 337, 346, 352, 354, 402, and 412, and a liquid raw material supply device 330. ), The remaining amount monitoring sensor 338 and the mass flow controller 344. In this embodiment, the controller 280 adjusts the flow rate of the mass flow controller 314, the opening and closing operation of the valves 316, 326, 333, 334, 337, 346, 352, 354, 402, and 412, and the remaining amount monitoring sensor. The operation / stop of the liquid raw material supply device 330 which received the detection result of 338, and control of the flow volume adjustment of the mass flow controller 344 are performed. Moreover, the controller 280 is also connected to each member of the source gas supply source 500, and control of each member of the source gas supply source 500 is performed similarly to the control with respect to the source gas supply source 300. As shown in FIG.

Moreover, the controller 280 monitors the supply amount of the vaporization gas of the liquid raw material by the mass flow controllers 344 and 544, and feeds back the detection result. Specifically, in FIG. 6, the controller 280 inputs the set flow rate SV of the mass flow controllers 344 and 544 to the flow rate control unit 900. Next, the flow control unit 900 transmits the setting output SFR for the mass flow controllers 344 and 544 to the mass flow controllers 344 and 544. The change amount PV of the actual flow rate PFR of the mass flow controllers 344 and 544 is based on the response characteristic G1 of the flow rate of the mass flow controllers 344 and 544 with respect to the flow rate of the mass flow meter 901. It is measured by the mass flow meter 901. And the setting output SFR which the flow volume control unit 900 transmits to the mass flow controllers 344 and 544 by the feedback of the change amount PV of the actual flow volume PFR of the mass flow controllers 344 and 544 is adjusted. do.

(Example 1)

Next, as an example of film formation by the ALD method, an Al ₂ O ₃ film is formed using TMA and O ₃ gas, which is one of the manufacturing processes of a semiconductor device, and an HfO ₂ film is formed using TEMAH and O ₃ gas. The case will be described.

Atomic layer deposition (ALD), one of chemical vapor deposition (CVD) methods, alternates two (or more) source gases used for film formation one by one under predetermined film forming conditions (temperature, time, etc.). It is a method of supplying onto a wafer 200, adsorbing by unit of one atomic layer, and forming into a film using surface reaction.

That is, for example, in the case of forming an Al ₂ O ₃ (aluminum oxide) film, by alternately supplying a vaporization gas and O ₃ (ozone) gas of TMA [Al (CH ₃ ) ₃ , trimethyl aluminum] as a raw material gas High quality film formation is possible at a low temperature of 250 to 450 ° C.

On the other hand, in the case of forming an HfO ₂ (hafnium oxide) film, gaseous gas and O ₃ of TEMAH [Hf (NCH ₃ C ₂ H ₅ ) ₄ , tetrakis (N-ethyl-N-methyl amino) hafnium] By alternately supplying the gas as a raw material gas, high quality film formation is possible at a low temperature of 150 to 300 ° C.

As described above, in the ALD method, film formation is performed by alternately supplying a plurality of types of source gases one by one. And film thickness control is controlled by the number of cycles of raw material gas supply. For example, when the film formation rate is 1 ms / cycle, when 20 ms is formed, the film formation process is performed 20 cycles.

First, the procedure for forming an Al ₂ O ₃ film will be described.

The semiconductor silicon wafer 200 to be formed is loaded into the boat 217 and loaded into the processing chamber 201. After importing, execute the following four steps in sequence.

(Step 1)

In step 1, O ₃ gas is supplied to the process chamber 201. Specifically, the valve 243a of the source gas supply pipe 232a and the valve 243d of the gas exhaust pipe 231 are opened together, and the flow rate is adjusted by the mass flow controller 241a in the source gas supply pipe 232a. ₃ gas is exhausted from the gas exhaust pipe 231 while supplying it to the process chamber 201 from the gas supply hole of the joining type gas supply nozzle 233.

When flowing O ₃ gas, the valve 243d is appropriately adjusted to maintain the pressure in the processing chamber 201 in an optimal range of 10 to 100 Pa. The mass flow controller 241a is controlled so that the supply flow rate of the O ₃ gas is 1 to 10 slm, and the time for exposing the wafer 200 to the O ₃ gas is 2 to 120 seconds. At this time, the temperature of the heater 207 is set so that the temperature of the wafer 200 may be in an optimum range of 250 to 450 ° C.

At the same time, open / close valves 253 and 257 may be opened to flow inert gas in inert gas supply pipes 232c and 232f. In this case, O ₃ gas can be prevented from drifting to the TMA side and TEMAH side.

At this time, only the gas supplied into the process chamber 201 is an O ₃ gas and an inert gas such as N ₂ or Ar, and TMA and TEMAH do not exist. Therefore, the O ₃ gas does not cause a gas phase reaction and reacts with a surface portion (such as a base film) on the wafer 200 (chemical adsorption).

(Step 2)

In step 2, the valve 243a of the source gas supply pipe 232a is closed to stop the supply of the O ₃ gas. The valve 243d of the gas exhaust pipe 231 is left open, the process chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and the O ₃ gas remaining in the process chamber 201 is discharged from the process chamber 201. Is excluded. At this time, inert gases such as N ₂ and Ar may be supplied to the processing chamber 201 from the source gas supply pipes 232a, 232b, and 232e, respectively, in which case the O ₃ gas remaining in the processing chamber 201 is removed. The effect is higher.

(Step 3)

In step 3, the vaporization gas of TMA is supplied to the process chamber 201. Specifically, in the source gas supply source 300, the valves 316, 326, 412, 352, and 354 are closed and the valves 402 and 346 are opened (the valve 243d is left open). The inert gas is introduced into the inert gas supply pipe 312 from the inert gas supply 310. The inert gas flows through the inert gas supply pipe 312, the bypass pipe 400, and the liquid raw material supply pipe 322 while adjusting the flow rate by the mass flow controller 314 to reach the liquid raw material tank 340. The liquid raw material supply pipe 322 in step 3 functions as an inert gas supply pipe which supplies an inert gas to the liquid raw material tank 340.

When the inert gas is supplied to the liquid raw material tank 340, the vaporized gas of the TMA flows into the raw material gas supply pipe 232b, and the vaporized gas of the TMA is supplied to the raw material gas supply pipe while the flow rate and temperature are controlled by the mass flow controller 344. 232b is distributed and exhausted from the gas exhaust pipe 231 while being supplied to the process chamber 201 from the gas supply hole of the joining type gas supply nozzle 233.

When flowing the vaporization gas of TMA, the valve 243d is adjusted appropriately, and the pressure in the process chamber 201 is maintained in the optimal range of 10-900 Pa. The mass flow controllers 314 and 344 are controlled to set the supply flow rate of the inert gas to 10 slm or less, and set a time for supplying the vaporized gas of the TMA to 1 to 4 seconds. In order to adsorb | suck again after that, you may set the time exposed in a raised pressure atmosphere to 0 to 4 second.

In the source gas supply source 300, the detection result of the mass flow controller 344 is output to the controller 280, and the controller 280 monitors the amount of vaporization of the TMA. The monitoring result is fed back from the controller 280 to the mass flow controller 314 to correct the supply flow rate of the inert gas. For example, when the amount of vaporized TMA decreases below a certain value, the supply flow rate of the inert gas is increased.

Also in step 3, the heater 207 is controlled so that the temperature of the wafer 200 is set to an optimum range of 250 to 450 ° C. as in the case of supplying O ₃ gas. By supplying the vaporization gas of the TMA, O ₃ and TMA chemically adsorbed on the surface of the wafer 200 are subjected to surface reaction (chemical adsorption) to form an Al ₂ O ₃ film on the wafer 200.

At the same time, open / close valves 254 and 257 may be opened to flow inert gas in inert gas supply pipes 232d and 232f. In this case, it is possible to prevent the vaporized gas of TMA from drifting to the O ₃ side and the TEMAH side.

(Step 4)

In step 4, the valve 346 is closed and the valves 352 and 354 are opened to stop the supply of vaporized gas to the TMA, and the process chamber 201 is evacuated with the valve 243d open. The vaporization gas of TMA after contributing to film formation as the vaporization gas of TMA remaining in the processing chamber 201 is excluded. At this time, an inert gas such as N ₂ or Ar may be supplied to the processing chamber 201 from the source gas supply pipes 232a, 232b, and 232e, respectively. In this case, as the vaporized gas of TMA remaining in the processing chamber 201. The effect of removing the vaporization gas of TMA after contributing to film formation from the processing chamber 201 is further enhanced.

By carrying out the above steps 1 to 4 as one cycle and repeating this cycle a plurality of times, an Al ₂ O ₃ film having a predetermined film thickness can be formed on the wafer 200. In this embodiment, since the vaporization gas of TMA flows after evacuating the inside of the process chamber 201 to remove the O ₃ gas in step 2, both do not react on the way to the wafer 200. The vaporized gas of the supplied TMA can be effectively reacted only with O ₃ adsorbed on the wafer 200.

When the formation of the Al ₂ O ₃ film is completed, the TMA of the liquid raw material tank 320 is supplied to the liquid raw material tank 340. Specifically, in the source gas supply source 300, the valves 402, 412, 346 are closed and the valves 316, 326, 352, 354 are opened (the valve 243d is left open). The inert gas is introduced into the inert gas supply pipe 312 from the inert gas supply 310.

The inert gas reaches the liquid raw material tank 320 from the inert gas supply pipe 312 while adjusting the flow rate by the mass flow controller 314, and pushes the TMA of the liquid raw material tank 320 into the liquid raw material supply pipe 322. The TMAF is circulated through the liquid raw material supply pipe 322 to the liquid raw material tank 340 and stored in the liquid raw material tank 340. As a result, the TMA necessary for the formation of the subsequent Al ₂ O ₃ film is supplied to the liquid raw material tank 340.

In the present embodiment, the liquid raw material tank 340 is configured to supply TMA in an amount required for one batch treatment (a quantity required to form an Al ₂ O ₃ film having a predetermined film thickness), Each time the Al ₂ O ₃ film is formed, the above replenishment is repeated.

Next, the procedure for forming the HfO ₂ film will be described.

(Step 5)

In step 5, O ₃ gas is supplied to the process chamber 201 as in the case of forming an Al ₂ O ₃ film. Specifically, the valve 243a of the source gas supply pipe 232a and the valve 243d of the gas exhaust pipe 231 are opened together, and the flow rate adjusted by the mass flow controller 241a from the source gas supply pipe 232a. ₃ gas is exhausted from the gas exhaust pipe 231 while supplying it to the process chamber 201 from the gas supply hole of the joining type gas supply nozzle 233.

When flowing O ₃ gas, the valve 243d is appropriately adjusted to maintain the pressure in the processing chamber 201 in an optimal range of 10 to 100 Pa. The supply flow rate of the O ₃ gas controlled by the mass flow controller 241a is set to 1 to 10 slm, and the time for exposing the wafer 200 to the O ₃ gas is set to 2 to 120 seconds. At this time, the temperature of the heater 207 is set so that the temperature of the wafer 200 may be in an optimal range of 150 to 300 ° C.

At the same time, inert gas may be flown by opening / closing valves 257 and 253 in inert gas supply pipes 232f and 232c. In this case, O ₃ gas can be prevented from drifting to the TEMAH side and the TMA side.

At this time, only the gas supplied into the process chamber 201 is an O ₃ gas and an inert gas such as N ₂ or Ar, and TEMAH and TMA do not exist. Therefore, the O ₃ gas does not cause a gas phase reaction, but reacts with a surface portion such as an underlying film on the wafer 200 (chemical adsorption).

(Step 6)

In step 6, the valve 243a of the source gas supply pipe 232a is closed to stop the supply of the O ₃ gas. The valve 243d of the gas exhaust pipe 231 is left open, the process chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and the O ₃ gas remaining in the process chamber 201 is discharged from the process chamber 201. Is excluded. At this time, inert gases such as N ₂ and Ar may be supplied to the processing chamber 201 from the source gas supply pipes 232a, 232e, and 232b, respectively. In this case, the O ₃ gas remaining in the processing chamber 201 is excluded. The effect is higher.

(Step 7)

In step 7, the vaporization gas of TEMAH is supplied to the process chamber 201. In detail, in the source gas supply source 500, the valves 516, 526, 612, 552, 554 are closed and the valves 602, 546 are opened (valve 243d remains open). Inert gas is introduced into the inert gas supply pipe 512 from the inert gas supply source 510. The inert gas flows through the inert gas supply pipe 512, the bypass pipe 600, and the liquid raw material supply pipe 522 while adjusting the flow rate with the mass flow controller 514 to reach the liquid raw material tank 540. The liquid raw material supply pipe 522 in step 7 functions as an inert gas supply pipe for supplying an inert gas to the liquid raw material tank 540.

When the inert gas is supplied to the liquid raw material tank 540, the vaporized gas of TEMAH flows into the raw material gas supply pipe 232e, and the vaporized gas of the TEMAH is supplied to the raw material gas supply pipe while the flow rate and temperature are controlled by the mass flow controller 544. 232e is distributed and exhausted from the gas exhaust pipe 231 while being supplied to the process chamber 201 from the gas supply hole of the separation type gas supply nozzle 234.

When flowing the TEMAH vaporized gas, the valve 243d is appropriately adjusted to maintain the pressure in the processing chamber 201 in an optimal range of 10 to 100 Pa. The mass flow controllers 514 and 544 are controlled to set the supply flow rate of the inert gas to 10 slm or less, and set a time for supplying the vaporized gas of TEMAH to 1 to 4 seconds. In order to adsorb | suck again after that, you may set the time exposed in a raised pressure atmosphere to 0 to 4 second.

In the source gas supply source 500, the detection result of the mass flow controller 544 is output to the controller 280, and the controller 280 monitors the amount of vaporization of TEMAH. The monitoring result is fed back from the controller 280 to the mass flow controller 514 to correct the supply flow rate of the inert gas. For example, if the amount of vaporization of TEMAH decreases below a certain value, the supply flow rate of the inert gas is increased.

Also in step 7, the heater 207 is controlled so that the temperature of the wafer 200 is set to an optimum range of 150 to 300 ° C. as in the case of supply of the O ₃ gas. By supplying the TEMAH vaporization gas, O ₃ and TEMAH chemically adsorbed on the surface of the wafer 200 are subjected to surface reaction (chemical adsorption) to form an HfO ₂ film on the wafer 200.

At the same time, the inert gas may flow from the inert gas supply pipes 232d and 232c by opening and closing the valves 254 and 253. In this case, it is possible to prevent the TEMAH vaporized gas from drifting to the O ₃ side and the TMA side.

(Step 8)

In step 8, the valve 546 is closed and the valves 552 and 554 are opened to stop the supply of the TEMAH vaporized gas, and the process chamber 201 is evacuated with the valve 243d open. As the vaporization gas of TEMAH remaining in the processing chamber 201, the vaporization gas of TEMAH after contributing to film formation is excluded. At this time, an inert gas such as N ₂ or Ar may be supplied to the processing chamber 201 from the source gas supply pipes 232a, 232e, and 232b, respectively. In this case, the vaporized gas of TEMAH remaining in the processing chamber 201 may be used. The effect of removing the vaporization gas of TEMAH after contributing to film formation from the processing chamber 201 is further enhanced.

By setting the above steps 5 to 8 as one cycle and repeating this cycle a plurality of times, an HfO ₂ film having a predetermined film thickness can be formed on the wafer 200. In this embodiment, since the gaseous gas of TEMAH flows after evacuating the inside of the process chamber 201 to remove the O ₃ gas in step 6, both do not react on the way to the wafer 200. The vaporized gas of the supplied TEMAH can be effectively reacted only with O ₃ adsorbed on the wafer 200.

When the formation of the HfO ₂ film is completed, TEMAH of the liquid raw material tank 520 is supplied to the liquid raw material tank 540. In detail, in the source gas supply source 500, the valves 602, 612, 546 are closed and the valves 516, 526, 552, 554 are opened (valve 243d is left open). Inert gas is introduced into the inert gas supply pipe 512 from the inert gas supply source 510. The inert gas reaches the liquid raw material tank 520 from the inert gas supply pipe 512 while adjusting the flow rate by the mass flow controller 514, and pushes the TEMAH of the liquid raw material tank 520 into the liquid raw material supply pipe 522. The TEMAH is circulated through the liquid raw material supply pipe 322 to the liquid raw material tank 540 and stored in the liquid raw material tank 540. As a result, the TEMAH necessary for the formation of the subsequent HfO ₂ film is replenished to the liquid raw material tank 540.

In the present embodiment, the liquid raw material tank 540 is supplied with TEMAH in an amount required for one batch treatment (a quantity required to form a HfO ₂ film having a predetermined film thickness), and the HfO _{2 having a} predetermined film thickness is supplied. Each time a film is formed, the above replenishment is repeated.

As described above, when the Al ₂ O ₃ film is formed, the source gas supply pipes 232a and 232b D are joined in the processing chamber 201, whereby the vaporized gas and the O ₃ gas of the TMA are joined to the combined gas supply nozzle 233. The deposited film can be made Al ₂ O ₃ by alternately adsorbing and reacting in the inside, and when the vaporized gas and O ₃ gas of TMA are supplied to separate nozzles, an Al film is generated in the TMA nozzle which may be a foreign matter generation source. Can solve the problem. Since the Al ₂ O ₃ film has better adhesion than the Al film and is hard to peel off, the Al ₂ O ₃ film is unlikely to be a source of foreign matter generation.

Further, HfO In: ₂ film formation, the source gas supply pipe (232a, 232b) O ₃ from the process chamber 201 shape the joined type gas supply nozzle 233 is communicated with a perforated nozzle (233a) joined in the The gas is supplied, and the vaporization gas of TEMAH is supplied from the separation type gas supply nozzle 234 which the source gas supply pipe 232e communicates with one porous nozzle 243a independently. As a result, an inert gas purge to prevent backflow or ingress required when a confluence type gas supply nozzle is used when supplying TEMAH can be avoided, and when a confluence type gas nozzle is used as the supply of TEMAH It becomes a problem and the pressure rise in a nozzle by a purge can be eliminated. Moreover, particle generation by reliquefaction of TEMAH (due to the low vapor pressure of TEMAH) accompanying the pressure rise can also be prevented.

(Example 2)

In Example 1, the case where film formation is performed by ALD method using one kind of liquid raw material for one kind of film type is explained. In the following, when film formation is performed by ALD method using three kinds of liquid raw materials. This will be described with reference to FIG. In addition, the same reference numerals are attached to the same members as those in Fig. 3, and the detailed description is omitted. In addition, in order to distinguish each source gas supply source and its structural member from another source gas supply source and its structural member, the code | symbol (A, B, or C) different from another source gas supply source and its structural member is attached | subjected at the end of the code | symbol.

For example, when forming a SiO ₂ film using a catalyst, HCD (hexachlorodisilane, Si ₂ Cl ₆ ), H ₂ O, a catalyst [pyridine (C ₅ H ₅ N), etc.] are used as a liquid raw material. Then, the vaporization gas of these three types of liquid raw materials is alternately supplied as raw material gas.

As an example of the liquid raw material, HCD is used in the source gas supply source 300A, H ₂ O is used in the source gas supply source 300B, and a catalyst is used in the source gas supply source 300C. HCD, H ₂ O, the catalyst is a liquid at room temperature.

In addition, the source gas supply sources 300A, 300B, and 300C also have the same configuration as the source gas supply sources 300 and 500, and in this embodiment, the same three-digit number as that of the member of FIG. Add a reference sign including the description and omit the description.

As in the present embodiment, when film formation is performed using a plurality of liquid raw materials, a source gas supply source is provided for each liquid raw material, respectively.

In the above embodiment, since the supply amount of the vaporized gas of the liquid raw material by the mass flow controllers 344, 544, 344A, 344B, and 344C is monitored by the controller 280, clogging due to the reliquefaction of the vaporized gas of the liquid raw material is prevented. This can be detected even if it occurs. Since the monitoring result is fed back to the mass flow controllers 314, 514, 314A, 314B, and 314C, the supply amount of the inert gas can be controlled to stabilize the supply amount of the vaporized gas of the liquid raw material.

In addition to the liquid raw material tanks 320, 520, 320A, 320B, and 320C, the liquid raw material tanks 340, 540, 340A, 340B, and 340C which are smaller than those are provided, so that the storage source and the processing chamber 201 of the liquid raw material are provided. ), The length (the length of the source gas supply pipes 232b, 232e, 232A, 232B, and 232C of the vaporized gas of the liquid raw material) can be shortened, and the possibility of generating particles due to the reliquefaction of the vaporized gas can be reduced. have.

Further, in addition to the liquid raw material tanks 320, 520, 320A, 320B, and 320C, the liquid raw material tanks 340, 540, 340A, 340B, which are smaller in size and capable of storing liquid raw materials required for one-time processing of the wafer 200, 340C), it is possible to minimize the amount of direct liquid raw material required for processing the wafer 200, and to reduce the dependence of the surface temperature of the liquid raw material on the remaining amount of the raw material.

In addition to the liquid raw material tanks 320, 520, 320A, 320B, and 320C, liquid raw material tanks 340, 540, 340A, 340B, and 340C, which are smaller than that and capable of storing liquid raw materials for one-time processing of the wafer 200, are provided. Since it is equipped, it is easy to control the temperature of a liquid raw material.

Moreover, in addition to the liquid raw material tanks 320, 520, 320A, 320B, and 320C, the liquid raw material tanks 340, 540, 340A, 340B, and 340C which are smaller than that and are capable of storing liquid raw materials required for one-time processing of the wafer 200. ), It is easy to control the gas supply amount to the processing chamber 201 because of its responsiveness and easy feedback control.

That is, the structure of FIG. 5 can be assumed as a comparative example of the structure of FIG. 3 and FIG. 7 which concerns on a present Example. In the configuration of the comparative example, the liquid raw material tanks 340, 540, 340A, 340B, and 340C and the mass flow controllers 344, 544, 344A, 344B, and 344C are not provided, and the liquid raw material supply pipes 322, 522, and 322A are not provided. , 322B, 322C are in communication with the upper spaces of the liquid raw material tanks 320, 520, 320A, 320B, and 320C. When an inert gas is introduced into the inert gas supply pipes 312, 512, 312A, 312B, and 312C, the inert gas reaches the liquid raw material of the liquid raw material tanks 320, 520, 320A, 320B, and 320C. The vaporized gas reaches the process chamber 201 through the liquid raw material supply pipes 322, 522, 322A, 322B, 322C and the raw material gas supply pipes 232b, 232e, 232A, 232B, and 232C as they are.

Regarding the structure of the comparative example, in this embodiment, the mass flow controllers 344, 544, 344A, 344B, in the section from the liquid raw material tanks 320, 520, 320A, 320B, 320C to the process chamber 201, Since 344C) exists and the supply amount of the vaporization gas of a liquid raw material is monitored by the controller 280, even if blockage by reliquefaction of the vaporization gas of a liquid raw material arises, this can be detected. Since the monitoring result is fed back to the mass flow controllers 314, 514, 314A, 314B, and 314C, the supply amount of the inert gas can be controlled to stabilize the supply amount of the vaporized gas of the liquid raw material.

In addition, with respect to the structure of the comparative example, in the present embodiment, the liquid raw material tanks 340, 540, 340A, in the section from the liquid raw material tanks 320, 520, 320A, 320B, and 320C to the processing chamber 201. Since 340B and 340C exist and the vaporization gas of a liquid raw material is supplied to the process chamber 201 from there, the supply distance of vaporization gas is short compared with the structure of a comparative example, and the possibility of particle generation by reliquefaction of the said vaporization gas can be reduced. Can be. In addition, the mass flow controllers 344, 544, 344A, 344B, and 344C, which can be heated, exist in the section from the liquid raw material tanks 340, 540, 340A, 340B, and 340C to the process chamber 201 to vaporize the liquid raw material. Since the gas can be heated, the possibility of generating particles due to reliquefaction of the vaporized gas can be reliably reduced.

In addition, about the structure of the said comparative example, in this Example, the liquid raw material tanks 340, 540, 340A, from the liquid raw material tanks 320, 520, 320A, 320B, and 320C to the process chamber 201. 340B, 340C are present so that liquid feedstock tanks 340, 540, 340A, 340B, 340C are smaller than liquid feedstock tanks 320, 520, 320A, 320B, 320C and are required for one-time processing of wafer 200. Since the liquid raw material can be stored, the amount of direct liquid raw material required for the processing of the wafer 200 can be minimized, and it is possible to reduce the dependence of the surface temperature of the liquid raw material on the remaining amount of the raw material.

As mentioned above, supply to the process chamber 201 of the vaporization gas of a liquid raw material can be stabilized.

In addition, as a method of vaporizing the liquid raw material and supplying it as a gaseous raw material to the processing chamber, a method of using a vaporizer in addition to the bubbling method may be used. It is effective to use. That is, in the case of the vaporizer, since the amount of vaporization of the raw material is determined depending on the performance of the vaporizer, when the vaporizer is enlarged to increase the amount of vaporization, the remaining amount is generated. In addition, when the vaporizer is made larger, the response is poor when performing feedback control. Therefore, the bubbling method is advantageous because the response is good and can be used in a fast cycle.

In this embodiment, the case where the Al ₂ O ₃ film and the HfO ₂ film are formed in the same processing chamber 201 is described as an example. However, in the processing chamber aimed at forming only the HfO ₂ film, the vaporization gas of TEMAH is used. it is possible to configure the film deposition by the two types of separate gas supply nozzle for supplying a separation type gas supply nozzle and the O ₃ gas supplied.

In addition, the shape of the present embodiment can be used in other types of film forming by vaporizing a liquid raw material to the Al ₂ O ₃ film and HfO bubbling method is not limited to the _two film types. For example, the film can be used in a TiN film for forming a film using a titanium raw material such as titanium tetrachloride (TiCl ₄ ) as a liquid raw material, or in a low temperature SiCN film for forming a film using tetramethylsilane (4MS) or the like as a liquid raw material. have. At this time, the temperature of the source gas supply pipe is heated to about 40 ° C for both titanium tetrachloride and tetramethylsilane.

In addition, the form which concerns on a present Example can be used also about the other film | membrane kind formed by vaporizing a some liquid raw material with respect to one kind of film | membrane kind. For example, it can be applied to HCD, H ₂ O, a cryogenic SiO ₂ film and the like which are formed using a catalyst as a liquid raw material. At this time, the temperature of the source gas supply pipe which supplies a catalyst to a process chamber at least is heated to about 75 degreeC.

As mentioned above, although preferred embodiment of this invention was described, According to preferable embodiment of this invention,

A processing chamber for processing a substrate,

A heating unit for heating the substrate,

In the substrate processing apparatus provided with the exhaust unit which exhausts the atmosphere in the said process chamber,

A first liquid raw material tank and a second liquid raw material tank for storing the liquid raw material,

A first carrier gas supply line for supplying a first carrier gas to the first liquid raw material tank;

A first raw material supply line receiving the supply of the first carrier gas to the first liquid raw material tank and forcing the liquid raw material of the first liquid raw material tank into the second liquid raw material tank;

A second carrier gas supply line for supplying a second carrier gas to the second liquid raw material tank;

A second raw material supply line receiving the supply of the second carrier gas to the second liquid raw material tank and supplying a vaporization gas of the liquid raw material of the second liquid raw material tank to the processing chamber;

A flow rate control device that controls a flow rate of the second carrier gas flowing through the second carrier gas supply line;

A flow rate detection device for detecting a flow rate of the vaporized gas flowing in the second raw material supply line;

And a feedback device for feeding back a detection result of the flow rate detection device to the flow rate control device,

The said 2nd liquid raw material tank is smaller in volume than the said 1st liquid raw material tank, and the said 2nd liquid raw material tank is provided with the 1st board | substrate processing apparatus by which the said liquid raw material required for one time process is stored.

Preferably, in the first substrate processing apparatus, the control unit,

The apparatus further includes a liquid raw material supply device for supplying the liquid raw material to the first liquid raw material tank, and a residual amount detection device installed in the first liquid raw material tank and monitoring the remaining amount of the liquid raw material in the first liquid raw material tank. and,

The controller controls the liquid raw material from the liquid raw material supply device to the first liquid raw material tank from the liquid raw material supply device so that the liquid raw material is always stored in the first liquid raw material tank in a predetermined amount based on the detection result obtained by the remaining amount detecting device. A second substrate processing apparatus is provided, which controls the liquid raw material supply apparatus to supply.

Further, preferably, in the first substrate processing apparatus, the control unit controls the heating unit to heat the gas supply pipe connecting the processing chamber and the second liquid raw material tank to a predetermined temperature. Is provided.

Moreover, More preferably, in the 3rd substrate processing apparatus, the 4th substrate processing apparatus in which the heating temperature of the said gas supply pipe differs according to the kind of said liquid raw material is provided.

More preferably, in the substrate processing apparatus of the first substrate, the fifth substrate processing apparatus is provided wherein the liquid raw material is any one of TEMAH, TMA, TiCl ₄ , 4MS, HCD, H ₂ O, and pyridine. .

More preferably, in the first substrate processing apparatus,

The second carrier gas supply line includes a bypass line connecting the first carrier gas supply line and the first raw material supply line,

The first and second carrier gases are gases supplied from the same gas source,

A sixth substrate processing apparatus is provided, wherein the second carrier gas is supplied to the second liquid raw material tank via the bypass line without passing through the first liquid raw material tank.

As mentioned above, although the embodiment of the present invention was described above, those skilled in the art should be noted that the present invention is not limited to these and various changes and modifications can be made without departing from the spirit and scope of the present invention. .

1 is a perspective view showing a schematic configuration of a substrate processing apparatus according to a preferred embodiment of the present invention;

FIG. 2 is a schematic configuration diagram of a vertical processing furnace used in a preferred embodiment of the present invention and a member attached thereto, and in particular, a longitudinal cross-sectional view in which a portion of the processing furnace is cut longitudinally;

3 is a schematic configuration diagram of a source gas supply source according to a preferred embodiment of the present invention;

4 is a block diagram showing a schematic circuit configuration of a source gas supply source according to a preferred embodiment of the present invention;

5 is a schematic configuration diagram showing a comparative example of a source gas supply source of FIG. 3;

6 is a block diagram showing feedback control in a controller;

7 is a schematic configuration diagram of a source gas supply source according to another preferred embodiment of the present invention.

Claims (6)

A processing chamber for processing a substrate, A heating unit for heating the substrate, In the substrate processing apparatus provided with the exhaust unit which exhausts the atmosphere in the said process chamber, A first liquid raw material tank and a second liquid raw material tank for storing the liquid raw material, A first carrier gas supply line for supplying a first carrier gas to the first liquid raw material tank; A first raw material supply line receiving the supply of the first carrier gas to the first liquid raw material tank and forcing the liquid raw material of the first liquid raw material tank into the second liquid raw material tank; A second carrier gas supply line for supplying a second carrier gas to the second liquid raw material tank; A second raw material supply line receiving the supply of the second carrier gas to the second liquid raw material tank and supplying a vaporization gas of the liquid raw material of the second liquid raw material tank to the processing chamber; A flow rate control device that controls a flow rate of the second carrier gas flowing through the second carrier gas supply line; A flow rate detection device for detecting a flow rate of the vaporized gas flowing in the second raw material supply line; And a feedback device for feeding back a detection result of the flow rate detection device to the flow rate control device, The second liquid raw material tank has a smaller internal volume than the first liquid raw material tank, and the second liquid raw material tank stores the liquid raw material required for one treatment. The method of claim 1, With the control unit, A liquid raw material supply device for supplying the liquid raw material to the first liquid raw material tank; A residual amount detection device installed in the first liquid raw material tank and monitoring a residual amount of the liquid raw material in the first liquid raw material tank; The controller controls the liquid raw material from the liquid raw material supply device to the first liquid raw material tank so that the liquid raw material is always stored in the first liquid raw material tank in a predetermined amount based on the detection result obtained by the remaining amount detecting device. And controlling the liquid raw material supply device to supply the substrate. The method of claim 1, The control unit controls the heating unit to heat the gas supply pipe connecting the processing chamber and the second liquid raw material tank to a predetermined temperature. The method of claim 3, wherein The heating temperature of the said gas supply line changes with kinds of the said liquid raw material, The substrate processing apparatus characterized by the above-mentioned. The method of claim 1, The liquid raw material is any one of TEMAH, TMA, TiCl ₄ , 4MS, HCD, H ₂ O, pyridine. The method of claim 1, The second carrier gas supply line includes a bypass line connecting the first carrier gas supply line and the first raw material supply line, The first carrier gas and the second carrier gas is a gas supplied from the same gas source, The second carrier gas is supplied to the second liquid raw material tank via the bypass line without passing through the first liquid raw material tank.

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