JP2005197541A - Substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processor for preventing a rotary shaft 218 or a seal means 340 from being exposed to treatment gas. <P>SOLUTION: This substrate processor is provided with a treatment chamber in which a substrate is stored and processed, a substrate holding means for holding the substrate in the treatment chamber and an exhaust port opened to the treatment chamber. The treatment chamber includes a substrate storage space including the exhaust port in which the substrate is stored and a non-substrate storage space, and comprises a diffusion preventing body for preventing the atmosphere of the substrate storage space from flowing to the non-substrate storage space between the substrate storage space and the non-substrate storage space and an inactive gas supply means for supplying inactive gas to the non-substrate storage space. The inert gas is sent out from the exhaust port. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a substrate processing apparatus, and more particularly, to a semiconductor manufacturing apparatus for forming a film by an ALD (Atomic layer Deposition) method used when manufacturing a Si semiconductor device.

First, a film forming process using an ALD method which is one of CVD (Chemical Vapor Deposition) methods will be briefly described.
In the ALD method, under a certain film formation condition (temperature, time, etc.), two types (or more) of source gases used for film formation are alternately supplied onto the substrate one by one and adsorbed in units of one atomic layer. This is a technique for performing film formation by utilizing surface reaction.
That is, for example, when an Al ₂ O ₃ (aluminum oxide) film is formed, TMA (Al (CH ₃ ) ₃ , trimethylaluminum) and O ₃ (ozone) are alternately supplied using the ALD method. Enables high-quality film formation at a low temperature of 250 to 450 ° C. in this way,
In the ALD method, film formation is performed by alternately supplying a plurality of types of reactive gases one by one. And film thickness control is controlled by the cycle number of reactive gas supply. For example, assuming that the film formation rate is 1 mm / cycle, when a film of 20 mm is formed, the film forming process is performed 20 cycles.

Conventionally, a vertical substrate processing apparatus (vertical apparatus) as shown in FIG. 3 is used as a substrate processing apparatus for performing a film forming process (substrate processing process) using such a CVD method.
A conventional vertical processing furnace 202 includes a reaction tube 203 made of, for example, quartz. The reaction tube 203 has an upper part closed and a lower part opened, and a manifold 209 is engaged with the lower part of the reaction tube 203. The manifold 209 is provided with a gas supply pipe 302 and a gas exhaust pipe 231 for supplying a processing gas. The gas supply pipe 302 is connected to the reaction pipe 2.
It extends to the upper part in 03, supplies process gas from the upper part toward the lower part, and exhausts from the lower part. The lower opening (furnace port portion) of the manifold 209 is connected to the boat 21.
7 is sealed by a seal cap 219 provided at the lower part of 7. A large number of wafers 200 are placed on the boat 217 and batch-processed in a reaction atmosphere.

When the wafer 200 is processed, the boat 217 is rotated in order to improve the in-plane uniformity of the processing conditions of the wafer 200. The boat 217 includes a boat rotation shaft 218 that supports the lower portion of the boat, and a boat rotation device 267 through a sealing device such as a magnetic fluid 340.
It is rotated by.

As described above, in such a conventional vertical apparatus, the processing gas is supplied from the upper part in the reaction tube 203 and exhausted from the lower part. Therefore, the rotary shaft 218 and the sealing means 340 are used.
Is exposed to the processing gas, generating particles due to adhesion of reaction by-products and sealing means 3
There is a problem of gas leakage due to alteration or deterioration of the 40 sealing material (magnetic seal).
Accordingly, a main object of the present invention is to provide a substrate processing apparatus that can prevent the rotating shaft 218 and the sealing means 340 from being exposed to the processing gas.

The present invention is a substrate processing apparatus having a processing chamber for storing and processing a substrate, substrate holding means for holding the substrate in the processing chamber, and an exhaust port opened in the processing chamber, wherein the processing chamber is A substrate storage space for storing a substrate, including a substrate storage space including the exhaust port and a non-substrate storage space, wherein an atmosphere of the substrate storage space is between the substrate storage space and the non-substrate storage space. A diffusion preventer that prevents the gas from flowing into the non-substrate housing space; and an inert gas supply unit that supplies an inert gas to the non-substrate housing space, wherein the inert gas is exhausted from the exhaust port. The present invention relates to a substrate processing apparatus.

The present invention is a substrate processing apparatus having a processing chamber for storing and processing a substrate, substrate holding means for holding the substrate in the processing chamber, and an exhaust port opened in the processing chamber, wherein the processing chamber is A substrate storage space for storing a substrate, including a substrate storage space including the exhaust port and a non-substrate storage space, wherein an atmosphere of the substrate storage space is between the substrate storage space and the non-substrate storage space. A diffusion preventer that prevents the gas from flowing into the non-substrate housing space; and an inert gas supply unit that supplies an inert gas to the non-substrate housing space, wherein the inert gas is exhausted from the exhaust port. Since the substrate processing apparatus is characterized in that the rotating shaft and the sealing means can be prevented from being exposed to the processing gas.

In a batch processing apparatus of a preferred embodiment of the present invention, a substrate capable of holding a plurality of substrates by using trimethylaluminum (chemical formula Al (CH ₃ ) ₃ , TMA) and ozone (O ₃ ) as raw materials. A holding jig, a reaction tube in which the substrate holding jig is inserted to process the substrate, a heating means for heating the substrate, a vacuum exhaust device capable of exhausting the gas in the reaction tube, and a substrate surface direction with respect to the substrate A gas nozzle that jets gas in parallel with the gas, and TMA and O ₃ gas supply lines connected to the nozzle merge in the reaction chamber to supply TMA and O ₃ alternately onto the substrate. Then, an aluminum oxide film (Al ₂ O ₃ film) is formed. In addition, TM on the substrate
A is adsorbed, and the O ₃ gas to be flowed next reacts with the adsorbed TMA to produce a monolayer Al ₂ O ₃ film.

In TMA, when both pressure and temperature are increased, self-decomposition is likely to occur, and an Al film is generated. The gas nozzle is provided with a nozzle hole for ejecting gas. Since the nozzle hole is small, the pressure in the nozzle is higher than the pressure in the furnace. For example, the furnace pressure is 0.5 To
At rr (about 67 Pa), the pressure inside the nozzle is expected to be 10 Torr (about 1330 Pa). For this reason, TMA self-decomposition tends to occur particularly in a nozzle in a high temperature region. In contrast, the temperature is high in the furnace, but the pressure is not as high as in the nozzle.
TMA self-degradation is difficult to occur. Therefore, the problem of Al film generation in the nozzle becomes significant.

In order to remove the Al ₂ O ₃ film adhering to the inner wall of the reaction tube, cleaning is performed by flowing a ClF ₃ gas. If this cleaning gas is supplied from the nozzle, the Al ₂ O in the nozzle is removed.
_{The three} films can be removed at the same time, and cleaning can be made easier and more efficient.

Further, the present invention is suitably applied not only to the generation of an Al ₂ O ₃ film but also to the generation of an HfO ₂ film. This is because the Hf raw material has the same problem as TMA. In this case, the HfO ₂ film is formed by alternately flowing Hf source gas of vaporized tetrakis (N-ethyl-N-methylamino) hafnium (liquid at room temperature) and O ₃ gas.
Furthermore, the present invention is also suitably applied to the generation of a SiO ₂ film using the following materials.
(1) O ₃ and Si ₂ Cl ₆ (hexachlorodisilane) are allowed to flow alternately to form S by the ALD method.
When forming an iO ₂ film.
(2) O ₃ and HSi (OC ₂ H ₅ ) ₃ (TRIES) are allowed to flow alternately and ALD is used for S
When forming an iO ₂ film.
(3) _{O 3} and _{HSi [N (CH 3) 2} ] 3 (TrisDMAS) and flowing alternately ALD
When the SiO ₂ film is formed by the method.

FIG. 1 is a schematic configuration diagram of a vertical substrate processing furnace according to the present embodiment, and shows a processing furnace part in a vertical cross section.

A reaction tube 203 is provided inside the heater 207 as a heating means as a reaction vessel for processing the wafer 200 as a substrate, and a manifold 209 made of, for example, stainless steel is engaged with the lower end of the reaction tube 203. The lower end opening (furnace port portion) is hermetically closed by a seal cap 219 that is a lid through an O-ring 220 that is an airtight member. At least the heater 207, the reaction tube 203, the manifold 209, and the seal cap 219
Thus, the processing furnace 202 is formed. At least the reaction tube 203 and the manifold 20
9. A processing chamber 201 for accommodating and processing the substrate is formed by the seal cap 219. The manifold 209 is fixed to holding means (hereinafter referred to as a heater base 251).

An annular flange is provided at each of the lower end portion of the reaction tube 203 and the upper opening end portion of the manifold 209, and an airtight member (hereinafter referred to as an O-ring 220) is disposed between these flanges. Has been.

A boat 217 as a substrate holding means is erected on the seal cap 219 via a rotating shaft 218. Then, the boat 217 is inserted into the processing chamber 201. A plurality of wafers 200 to be batch-processed are stacked on the boat 217 in a horizontal posture in multiple stages in the tube axis direction. Heater 207
Heats the wafer 200 inserted into the processing chamber 201 to a predetermined temperature.

A processing gas supply means for supplying a processing gas into the processing chamber 201 will be described. The processing gas supply means includes gas supply pipes 232a, 232b, 232c, 232d, valves 243a, 25.
0, 252, 253, 254, perforated nozzle 233, mass flow meters 241a, 241b
Etc. Two gas supply pipes 232a and 232b are provided as supply pipes for supplying a plurality of types, here two types of gases, to the processing chamber 201. Gas supply pipes 232a, 23
2b is provided through the lower portion of the manifold 209, and the gas supply pipe 232b is
Two gas supply pipes 232a and 232b join the gas supply pipe 232a in the processing chamber 201.
Communicates with a single multi-hole nozzle 233. The nozzle 233 is provided in the processing chamber 201, and its upper portion extends in a region that is equal to or higher than the decomposition temperature of TMA supplied from the gas supply pipe 232b. However, the location where the gas supply pipe 232b merges with the gas supply pipe 232a in the processing chamber 201 is an area below the decomposition temperature of TMA.
This is a region where the temperature is lower than the temperature near zero. Here, from the first gas supply pipe 232a, through a first mass flow controller 241a which is a flow rate control means and a first valve 243a which is an on-off valve, a porous nozzle installed in a processing chamber 201 which will be described later. Through 233, the reaction gas (O ₃ ) is supplied as a processing gas to the processing chamber 201, and the second gas supply pipe 23 is supplied.
From 2b, through a second mass flow controller 241b that is a flow control means, a second valve 252 that is an on-off valve, a TMA container 260, and a third valve 250 that is an on-off valve,
Reactive gas (TMA) as a processing gas in the processing chamber 201 through the porous nozzle 233 described above.
Is supplied. A heater 300 is provided in the gas supply pipe 232b from the TMA container 260 to the manifold 209, and the gas supply pipe 232b is maintained at 50 to 60 ° C.

An inert gas line 232 c is connected to the gas supply pipe 232 b on the downstream side of the third valve 250 via the open / close valve 253. In addition, an inert gas line 232d is connected to the gas supply pipe 232a on the downstream side of the first valve 243a via an open / close valve 254.

In the processing chamber 201, a gas exhaust pipe 231 that is an exhaust pipe for exhausting gas is provided in the manifold 20.
9 is evacuated by a vacuum pump 246, which is an evacuation means, through an exhaust pipe 311 opened in FIG. 9, the gas exhaust pipe 231 and the fourth valve 243d. For example, the vacuum pump 246 includes a mechanical booster pump and a dry pump. The fourth valve 243d can be opened and closed to stop the vacuum exhaust / evacuation of the processing chamber 201.
Further, the valve is an on-off valve that can adjust the pressure by adjusting the valve opening.

A nozzle 233 is disposed along the stacking direction of the wafer 200 from the lower part to the upper part of the reaction tube 203. The nozzle 233 is provided with gas supply holes 248b which are supply holes for supplying a plurality of gases.

A boat 217 for mounting a plurality of wafers 200 in multiple stages at the same interval is provided at the center of the reaction tube 203. The boat 217 can enter and exit the reaction tube 203 by a boat elevator mechanism (not shown). It has become. A plurality of heat insulating plates 320 are placed under the boat 217 to insulate from a relatively low-temperature furnace lower atmosphere. Further, a boat rotation mechanism 267 which is a rotation means for rotating the boat 217 in order to improve the uniformity of processing.
Is provided. The boat 217 is supported by a boat rotation shaft 218 and has a magnetic seal 340.
Such a sealing means is rotated while maintaining the airtightness in the processing chamber 201.

An annular diffusion preventing body 310 is provided at a lower portion of the manifold 209, for example, below the exhaust port 311 provided in the manifold 209, and at least the exhaust port 311 and the wafer 200 are disposed in the space in the processing chamber 201. Including the space (substrate housing space) and the rotating shaft 2
18 and the magnetic seal 340 are separated into a space (non-substrate housing space). Although the outer ring portion of the diffusion preventing body 310 is fixed to the inner wall of the manifold 209, the inner ring portion is not fixed to the boat 217, and does not come into contact when the boat 217 enters and leaves the reaction tube 203. There is a slight gap 330. Therefore, the term “separation” as used herein does not mean a state where gas cannot enter and exit at all, but when the pressures in the substrate accommodation space and the non-substrate accommodation space are substantially the same, the gas entry and exit is extremely difficult. Including that the gap is open.

An inert gas is supplied from the inert gas supply means to the non-substrate housing space. The inert gas supply means includes a nozzle 301 provided through a portion of the manifold 209 that forms the non-substrate housing space, a fifth valve 243e that is an on-off valve,
A third mass flow controller 241c, which is a flow rate control means, and a gas supply pipe 232e are provided. For example, when an inert gas such as nitrogen (N 2) or argon (Ar) is supplied to the non-substrate housing space by the inert gas supply means, the inert gas is discharged from the gas exhaust pipe 231 through the gap 330. Is done. Accordingly, when the substrate is processed, the inert gas is supplied to the non-substrate housing space by the inert gas supply means, and the inert gas flows such that the inert gas is exhausted from the exhaust pipe 231 through the gap 330. Then, the gas used for substrate processing (processing gas)
Can enter the non-substrate housing space and prevent the rotating shaft and magnetic fluid from being exposed to the processing gas.

The controller 121 which is a control means includes first, second and third mass flow controllers 2.
41a, 241b, 241c, first to fifth valves 243a, 252, 250, 243d
243e, valves 253, 254, heater 207, vacuum pump 246, boat rotation mechanism 267, boat lifting mechanism not shown in the figure, connected to the first, second, third mass flow controllers 241a, 241b, 241c Flow rate adjustment, first, second, third, and fifth valves 243a, 252, 250, 243e, opening and closing operations of valves 253 and 254, opening and closing and pressure adjustment operations of the fourth valve 243d, temperature adjustment of the heater 207, Start of vacuum pump 246
The stop, the rotation speed adjustment of the boat rotation mechanism 267, and the lifting operation control of the boat lifting mechanism are performed.

Next, as an example of film formation by the ALD method, a case where an Al ₂ O ₃ film is formed using TMA and O ₃ gas will be described.
After the temperature in the processing chamber 201 is stabilized at the film formation temperature, the boat 217 loaded with the semiconductor silicon wafer 200 to be formed is loaded into the processing chamber 201. After carrying in, the inside of the processing chamber 201 is evacuated, and nitrogen (N ₂ ) purge is performed to desorb moisture adhering to the boat 217, the reaction tube 203, the wafer 200, and the like. Thereafter, the following three steps are sequentially executed.

[Step 1]
In step 1, O ₃ gas is flowed. First, the first valve 243a provided in the first gas supply pipe 232a and the fourth valve 243d provided in the gas exhaust pipe 231 are both opened, and the first mass flow controller 243a is operated from the first gas supply pipe 232a. O with adjusted flow rate
₃ gas exhaust pipe 2 while supplying gas from the gas supply hole 248b of the nozzle 233 to the processing chamber 201
31 is exhausted. When the O ₃ gas is allowed to flow, the pressure in the processing chamber 201 is set to 10 to 100 Pa by appropriately adjusting the fourth valve 243d. The supply flow rate of O ₃ controlled by the first mass flow controller 241a is 1000 to 10,000 sccm. The time for exposing the wafer 200 to O ₃ is 2 to 120 seconds. At this time, the temperature of the heater 207 is a wafer temperature of 250 to
It is set to 450 ° C.

At the same time, when the opening / closing valve 253 is opened from the inert gas line 232c connected to the middle of the gas supply pipe 232b to flow the inert gas, it is possible to prevent the O ₃ gas from flowing into the TMA side.

At this time, the gases flowing into the processing chamber 201 are only inert gases such as O ₃ , N ₂ , and Ar, and there is no TMA. Therefore, O ₃ does not cause a gas phase reaction, and reacts with the underlying film on the wafer 200.

[Step 2]
In step 2, the first valve 243a of the first gas supply pipe 232a is closed to stop the supply of O ₃ . Further, the fourth valve 243 d of the gas exhaust pipe 231 is kept open, and the processing chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and residual O ₃ is excluded from the processing chamber 201. Further, at this time, when an inert gas such as N ₂ is supplied to the processing chamber 201 from the first gas supply pipe 232a that is an O ₃ supply line and the second gas supply pipe 232b that is a TMA supply line, respectively, The effect of eliminating O ₃ is further enhanced.

[Step 3]
In step 3, TMA gas is flowed. TMA is a liquid at normal temperature, and in order to supply it to the processing chamber 201, a method of supplying it after heating and vaporizing, passing an inert gas such as nitrogen or a rare gas called a carrier gas through the TMA container 260, There is a method of supplying the vaporized portion together with the carrier gas to the processing chamber, and the latter case will be described as an example. First, the valve 252 provided in the carrier gas supply pipe 232b, the valve 250 provided between the TMA container 260 and the processing chamber 201, and the fourth valve 243d provided in the gas exhaust pipe 231 are opened, and the carrier gas supply pipe is opened. The carrier gas whose flow rate is adjusted by the second mass flow controller 241b from 232b passes through the TMA container 260, and is supplied to the processing chamber 201 from the gas supply hole 248b of the nozzle 233 as a mixed gas of TMA and carrier gas. Exhaust from the tube 231. When flowing the TMA gas, the fourth valve 243d is appropriately adjusted so that the pressure in the processing chamber 201 is 10 to 900 Pa. Second mass flow controller 241
The supply flow rate of the carrier gas controlled by a is 10,000 sccm or less. The time for supplying TMA is set to 1 to 4 seconds. Thereafter, the time for exposure to an elevated pressure atmosphere for further adsorption may be set to 0 to 4 seconds. At this time, the wafer temperature is the same as when O ₃ is supplied.
250-450 ° C. By supplying TMA, O ₃ on the base film and TMA react with each other to form an Al ₂ O ₃ film on the wafer 200.

At the same time, when the opening / closing valve 254 is opened from the inert gas line 232d connected in the middle of the gas supply pipe 232a to flow the inert gas, it is possible to prevent the TMA gas from flowing into the O ₃ side.

After the film formation, the valve 250 is closed, the fourth valve 243d is opened, and the processing chamber 201 is evacuated to remove the gas after contributing to the film formation of the remaining TMA. Further, at this time, if an inert gas such as N ₂ is supplied to the processing chamber 201 from the first gas supply pipe 232a which is an O ₃ supply line and the second gas supply pipe 232b which is a TMA supply line, the residual gas is further increased. The effect of removing the gas after contributing to the film formation of TMA from the processing chamber 201 is enhanced.

Steps 1 to 3 are defined as one cycle, and this cycle is repeated a plurality of times to form an Al ₂ O ₃ film having a predetermined thickness on the wafer 200.

Since the inside of the processing chamber 201 is evacuated to remove the O ₃ gas, TMA is flown, so that they do not react on the way to the wafer 200. The supplied TMA can effectively react only with O ₃ adsorbed on the wafer 200.

Further, the first gas supply pipe 232a that is an O ₃ supply line and the second gas supply pipe 232b that is a TMA supply line are merged in the processing chamber 201, whereby TMA and O ₃ are alternately arranged in the nozzle 233. The deposited film can be made Al ₂ O ₃ by adsorption and reaction, and TMA
It is possible to eliminate the problem of the Al film that can be a foreign substance source within TMA nozzle when supplying O ₃ at different nozzles to produce a. Since the Al ₂ O ₃ film has better adhesion than the Al film and is less likely to peel off, it is less likely to become a foreign matter generation source.

Further, at least when the processing gas is supplied into the processing chamber 201, the inert gas is supplied from the inert gas supply means to the non-substrate housing space and is exhausted from the gas exhaust pipe 231 through the gap 330. Since the flow of the inert gas is formed, the atmosphere containing the processing gas in the substrate housing space is prevented from entering the non-substrate housing space.

After the film forming process on the wafer 200 is completed, the inside of the processing chamber 201 is cycle purged with nitrogen and returned to atmospheric pressure with nitrogen, and then the boat 217 is lowered to carry out the wafer 200.

Next, with reference to FIG. 2, the outline about the semiconductor manufacturing apparatus which is an example of the substrate processing apparatus to which this invention is applied suitably is demonstrated.

A cassette stage 105 is provided on the front side of the inside of the housing 101 as a holder transfer member that transfers the cassette 100 as a substrate storage container to and from an external transfer device (not shown). Is provided with a cassette elevator 115 as an elevating means, and a cassette transfer machine 114 as a conveying means is attached to the cassette elevator 115. Further, a cassette shelf 109 as a means for placing the cassette 100 is provided on the rear side of the cassette elevator 115, and a spare cassette shelf 110 is also provided above the cassette stage 105. A clean unit 11 is located above the spare cassette shelf 110.
8 is provided so that clean air is circulated through the inside of the housing 101.

A processing furnace 202 is provided above the rear portion of the housing 101, and a processing chamber is provided in the processing furnace 202. Below the processing furnace 202, a boat elevator 121 is provided as an elevating means for raising and lowering a boat 217 as a substrate holding means for holding wafers 200 as substrates in a multi-stage in a horizontal posture to the processing chamber 201, and is attached to the boat elevator 121. Lifted member 1
A seal cap 219 as a lid is attached to the front end portion of 22 to support the boat 217 vertically. Between the boat elevator 121 and the cassette shelf 109, a transfer elevator 113 as an elevating means is provided, and a wafer transfer machine 112 as a transfer means is attached to the transfer elevator 113. Next to the boat elevator 121, there is provided a furnace port shutter 116 as a shielding member that has an opening / closing mechanism and closes the lower surface of the processing chamber 201.

The cassette 100 loaded with the wafers 200 is loaded from the external transfer device (not shown) onto the cassette stage 105 in an upward posture, and is rotated by 90 ° C. on the cassette stage 105 so that the wafer 200 is in a horizontal posture. Further, the cassette 100 is transported from the cassette stage 105 to the cassette shelf 109 or the spare cassette shelf 110 by cooperation of the raising / lowering operation of the cassette elevator 115, the transverse operation, the advance / retreat operation of the cassette transfer machine 114, and the rotation operation.

The cassette shelf 109 has a transfer shelf 123 in which the cassette 100 to be transferred by the wafer transfer device 112 is stored. The cassette 100 to which the wafer 200 is transferred is transferred by the cassette elevator 115 and the cassette transfer device 114. Transferred to the transfer shelf 123.

When the cassette 100 is transferred to the transfer shelf 123, the wafers 200 are transferred from the transfer shelf 123 to the boat 217 in a lowered state by the cooperation of the advance / retreat operation, the rotation operation, and the lifting / lowering operation of the transfer elevator 113. Is transferred.

When a predetermined number of wafers 200 are transferred to the boat 217, the boat 217 is inserted into the processing chamber 201 by the boat elevator 121, and the processing chamber 201 is airtightly closed by the seal cap 219. In the processing chamber 201 that is hermetically closed, the wafer 200 is heated and a processing gas is supplied into the processing chamber 201 so that the wafer 200 is processed.

When the processing on the wafer 200 is completed, the wafer 200 is subjected to the reverse procedure of the operation described above.
It is transferred from the boat 217 to the cassette 100 of the transfer shelf 123, the cassette 100 is transferred from the transfer shelf 123 to the cassette stage 105 by the cassette transfer device 114, and is carried out of the housing 101 by an external transfer device (not shown). Is done. In addition, the furnace port shutter 116 is connected to the boat 2.
When 17 is in the lowered state, the lower surface of the processing chamber 201 is closed to prevent outside air from being caught in the processing chamber 201.
The transport operation of the cassette transfer machine 114 and the like is controlled by the transport control means 124.

It is a schematic longitudinal cross-sectional view of the vertical substrate processing furnace in the substrate processing apparatus of one Example of this invention. It is a schematic oblique view for demonstrating the substrate processing apparatus of one embodiment of this invention. It is a schematic longitudinal cross-sectional view of the vertical substrate processing furnace in the substrate processing apparatus of an example of a prior art example.

Explanation of symbols

121 ... Controller 200 ... Wafer 202 ... Processing furnace 203 ... Reaction tube 207 ... Heater 209 ... Manifold 217 ... Boat 218 ... Rotating shaft 219 ... Seal cap 220 ... O-ring 231 ... Gas exhaust pipe 232a ... First gas supply pipe 232b ... Second gas supply pipe 232c ... inert gas line 232d ... inert gas line 232e ... fifth gas supply pipe 233 ... nozzle 241a ... first mass flow controller 241b ... second mass flow controller 241c ... third mass flow controller 243a ... first valve 243d ... fourth valve 243e ... fifth valve 246 ... vacuum pump 248b ... gas supply hole 250 ... third valve 251 ... heater base 252 ... second valve 253 ... valve 254 ... valve 260 ... TMA 267 ... boat rotating mechanism 300 ... heater 301 ... nozzle 310 ... diffusion barrier 311 ... outlet 320 ... heat insulating plate 330 ... clearance

Claims (1)

A processing chamber for receiving and processing substrates;
Substrate holding means for holding the substrate in the processing chamber;
A substrate processing apparatus having an exhaust port opened in the processing chamber,
The processing chamber is a substrate storage space for storing the substrate, and includes a substrate storage space including the exhaust port, and a non-substrate storage space;
A diffusion preventing body for preventing an atmosphere of the substrate accommodation space from flowing into the non-substrate accommodation space between the substrate accommodation space and the non-substrate accommodation space;
An inert gas supply means for supplying an inert gas to the non-substrate housing space;
The substrate processing apparatus, wherein the inert gas is exhausted from the exhaust port.

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