JP2017063188A - スプリットゲートフラッシュ技術におけるインターディジテートキャパシタ - Google Patents
スプリットゲートフラッシュ技術におけるインターディジテートキャパシタ Download PDFInfo
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- 239000003990 capacitor Substances 0.000 title abstract description 64
- 238000005516 engineering process Methods 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000015654 memory Effects 0.000 claims abstract description 52
- 125000006850 spacer group Chemical group 0.000 claims description 39
- 229910021332 silicide Inorganic materials 0.000 claims description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 269
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 241000894007 species Species 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000000233 Melia azedarach Species 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZQXQADNTSSMHJI-UHFFFAOYSA-N hafnium(4+) oxygen(2-) tantalum(5+) Chemical compound [O-2].[Ta+5].[Hf+4] ZQXQADNTSSMHJI-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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Abstract
【解決手段】本発明は、スプリットゲートフラッシュメモリセルとともに形成され、且つ、単位面積当たり、高キャパシタンスを提供するインターディジテートキャパシタ、および、その形成方法に関する。いくつかの実施態様において、インターディジテートキャパシタは、半導体基板の上面内に設けられるウェル領域を有する。複数のトレンチは、半導体基板の上面から、ウェル領域内の位置まで縦方向に延伸する。下部電極が複数のトレンチ内に配置される。下部電極は、複数のトレンチの内面に沿って配置される電荷トラッピング誘電層により、ウェル領域から分離される。複数の上部電極は、電荷トラッピング誘電層により、下部電極から横方向に分離され、且つ、第一誘電層により、ウェル領域から縦方向に分離される位置で、半導体基板上に配置される。
【選択図】図1
Description
101〜インターディジテートキャパシタ
102〜半導体基板
102u〜上面
104〜ウェル領域
106〜第一誘電層
108〜下部電極
110〜電荷トラッピング誘電層
112〜上部電極
112a、112c〜外側電極
112b〜内側電極
114〜線
200〜集積チップ
201〜インターディジテートキャパシタ
202〜分離構造
204〜電荷トラッピング誘電層
204’〜追加の電荷トラッピング誘電層
204a〜第一酸化層
204b〜窒化層
204c〜第二酸化層
206〜側壁スペーサ
208〜下シリサイド層
210〜上シリサイド層
212〜第二誘電層
214〜コンタクトエッチング停止層
216〜第一層間誘電層
V1〜第一電圧
V2〜第二電圧
300〜集積チップ
302a〜埋め込み式フラッシュメモリ領域
302b〜キャパシタ領域
304〜側壁スペーサ
304’〜追加の側壁スペーサ
304a〜第一側壁スペーサ
304b〜第二側壁スペーサ
306〜スプリットゲートフラッシュメモリセル
306a〜第一スプリットゲートフラッシュメモリセル
306b〜第二スプリットゲートフラッシュメモリセル
308〜ソース/ドレイン領域
310〜選択ゲート電極
312〜コントロールゲート電極
314〜ゲート誘電層
316〜第二層間誘電層
318〜コンタクト
ds/d、dw〜深さ
400〜集積チップ
402〜ロジック領域
402a〜NMOS領域
402b〜PMOS領域
403a〜NMOSトランジスタデバイス
403b〜PMOSトランジスタデバイス
404〜ソース/ドレイン領域
406〜ドレイン延伸領域
407〜ゲート構造
408〜高誘電率ゲート誘電層
410a〜NMOS金属ゲート電極
410b〜PMOS金属ゲート電極
412〜側壁スペーサ
412a〜第一側壁スペーサ
412b〜第二側壁スペーサ
500〜断面図
502〜第一誘電層
504〜第一マスク層
600〜断面図
602〜第一ドーパント種
604〜第二マスク層
606〜ウェル領域
700〜断面図
701〜第二誘電層
702〜第一電極層
704〜ハードマスク層
706〜酸化層
708〜選択ゲートスタック
710〜上部電極スタック
800〜断面図
802〜第三マスク層
806〜溝槽
810〜第一エッチャント
900〜断面図
902〜電荷トラッピング誘電層
902a〜第一酸化層
902b〜窒化層
902c〜第二酸化層
904〜第二電極層
906〜ハードマスク層
1000〜断面図
1002〜第二エッチャント
1100〜断面図
1102〜第四マスキング構造
1104〜第三エッチャント
1106a、1106b〜犠牲ゲートスタック
1108〜犠牲ポリシリコン層
1110〜犧牲ハードマスク層
1112〜第一側壁スペーサ
1200〜断面図
1202〜第二側壁スペーサ
1204〜第三側壁スペーサ
1206〜ドーパント種
1300〜断面図
1302〜線
1400〜断面図
1402〜コンタクトエッチング停止層
1404〜第一層間誘電層
1500〜断面図
1502〜線段
1600〜断面図
1700、1800〜方法
1702〜1710、1800〜1830〜工程
Claims (10)
- 集積チップであって、
半導体基板の上面内に設けられるウェル領域と、
第一誘電層により、前記半導体基板から縦方向に分離される位置で、前記半導体基板上に配置される複数の上部電極と、
前記複数の上部電極間から、前記ウェル領域内に埋め込まれる位置まで縦方向に延伸する一つ以上の下部電極、および、
前記半導体基板と前記一つ以上の下部電極の間、および、前記複数の上部電極と一つ以上の下部電極の間に配置される電荷トラッピング誘電層、
を含むことを特徴とする集積チップ。 - 前記電荷トラッピング誘電層は、
第一酸化物層と、
前記第一酸化物層に接触する窒化層、および、
前記窒化層に接触する第二酸化物層、
を含むことを特徴とする請求項1に記載の集積チップ。 - さらに、
前記一つ以上の下部電極から横方向にオフセットする位置で、前記ウェル領域の上面の上へ配置される下シリサイド層と、
前記複数の上部電極と前記一つ以上の下部電極の上面の上へ配置される上シリサイド層と、
を含むことを特徴とする請求項1に記載の集積チップ。 - さらに、
前記複数の上部電極により、前記一つ以上の下部電極から横方向に分離される側壁スペーサを含むことを特徴とする請求項1に記載の集積チップ。 - さらに、
分離構造により、前記複数の上部電極から横方向に分離され、ゲート誘電層により前記半導体基板から縦方向に分離され、且つ、追加の電荷トラッピング層により、コントロールゲート電極から横方向に分離される選択ゲート電極を含むスプリットゲートフラッシュメモリセルと、
前記選択ゲート電極の対向側で、前記半導体基板内に設けられる複数のソース/ドレイン領域であって、これら複数のソース/ドレイン領域は、第一深さまで、前記半導体基板中に縦方向に延伸するとともに、前記ウェル領域が、前記第一深さより大きい第二深さまで、前記半導体基板中に延伸することと、
前記分離構造上に配置され、且つ、前記第一誘電層と同じ材料を含む第二誘電層と、
を有することを特徴とする請求項1に記載の集積チップ。 - さらに、
前記ウェル領域上に配置されるコンタクトエッチング停止層と、
前記コンタクトエッチング停止層上に配置される第一インターレベル絶縁(ILD)層と、を含み、
前記コンタクトエッチング停止層、前記電荷トラッピング誘電層、前記第一ILD層、前記複数の上部電極および前記一つ以上の下部電極は、縦方向に並んだ平坦な上面を有することを特徴とする請求項1に記載の集積チップ。 - 前記一つ以上の下部電極が互いに電気的に結合するとともに、前記複数の上部電極が前記ウェル領域に電気的に結合することを特徴とする請求項1に記載の集積チップ。
- 集積チップであって、
半導体基板の上面内に設けられるウェル領域と、
第一誘電層により、前記半導体基板から縦方向に分離される位置で、前記半導体基板上に配置される複数の上部電極と、
前記複数の上部電極間に交互配置され、且つ、前記ウェル領域中に延伸するトレンチ内に配置される一つ以上の下部電極と、
前記一つ以上の下部電極を、前記ウェル領域および前記複数の上部電極から分離する三層構造を有する電荷トラッピング誘電層と、
を含み、
前記複数の上部電極、前記電荷トラッピング誘電層および前記一つ以上の下部電極が、縦方向に並んだ上面を有することを特徴とする集積チップ。 - 集積チップの形成方法であって、
ウェル領域を半導体基板内に形成する工程と、
複数の上部電極を、前記ウェル領域上に形成する工程と、
前記複数の上部電極にしたがって、前記ウェル領域を選択的にエッチングして、前記複数の上部電極を横方向に分離する一つ以上のトレンチを形成する工程と、
前記一つ以上のトレンチ内、且つ、前記複数の上部電極の側壁に沿って、電荷トラッピング誘電層を形成する工程と、
一つ以上の下部電極を、前記一つ以上のトレンチ内に形成し、前記一つ以上の下部電極が、前記電荷トラッピング誘電層により、前記ウェル領域および前記複数の上部電極から分離される工程と、
を含むことを特徴とする方法。 - さらに、
選択ゲート電極を、前記半導体基板内に設けられる分離構造により、前記一つ以上のトレンチから横方向に分離される埋め込み式フラッシュメモリ領域内に形成する工程と、
追加の電荷トラッピング誘電層を形成して、前記選択ゲート電極の側壁に沿って延伸する縦方向部分および横方向部分を有する工程と、
コントロールゲート電極を、前記電荷トラッピング誘電層の前記横方向部分上に形成する工程と、
を含むことを特徴とする請求項9に記載の方法。
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