JP2017055070A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP2017055070A JP2017055070A JP2015179997A JP2015179997A JP2017055070A JP 2017055070 A JP2017055070 A JP 2017055070A JP 2015179997 A JP2015179997 A JP 2015179997A JP 2015179997 A JP2015179997 A JP 2015179997A JP 2017055070 A JP2017055070 A JP 2017055070A
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- film
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- oxide
- metal
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- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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Abstract
Description
例えば、図4(C)および図5(A)に示すように、保護膜60が酸化銅膜60aとSUS酸化膜60bとの積層膜である場合、まず、銅(Cu)をターゲットとして用いて、アルゴン(Ar)および酸素(O2)の混合雰囲気中において、銅をプラズマ酸化しながらシールド膜50上にスパッタリングを行う。次に、ステンレスの材料(Fe、Cr、Ni)をターゲットとして用いて、アルゴン(Ar)および酸素(O2)の混合雰囲気中において、ステンレスの材料をプラズマ酸化しながら酸化銅膜上にスパッタリングを行う。これにより、保護膜60として、酸化銅膜60aとSUS酸化膜(酸化クロム、酸化鉄、酸化ニッケルを含む酸化膜)60bとの積層膜がシールド膜50上に形成される。
例えば、図4(D)および図4(E)に示すように、保護膜60がステンレス膜とクロム酸化膜との積層膜である場合、まず、ステンレス膜の材料(Fe、Cr、Ni)をターゲットとして用いて、アルゴン(Ar)の混合雰囲気中において、ステンレス膜をシールド膜50上にスパッタする。次に、クロムをターゲットとして用いて、アルゴン(Ar)および酸素(O2)の混合雰囲気中において、クロムをプラズマ酸化しながらステンレス膜上にスパッタする。これにより、保護膜60として、ステンレス膜と酸化クロム膜との積層膜がシールド膜50上に形成される。
例えば、保護膜60がステンレス膜と窒化チタンアルミとの積層膜である場合、まず、ステンレス膜の材料(Fe、Cr、Ni)をターゲットとして用いて、アルゴン(Ar)の混合雰囲気中において、ステンレス膜をシールド膜50上にスパッタする。次に、チタンアルミ合金をターゲットとして用いて、アルゴン(Ar)および窒素(N2)の混合雰囲気中において、チタンアルミ合金をプラズマ窒化しながらステンレス膜上にスパッタする。これにより、保護膜60として、ステンレス膜と窒化チタンアルミ膜との積層膜がシールド膜50上に形成される。
Claims (7)
- 第1面と、該第1面の反対側にある第2面と、前記第1面と前記第2面との間にある側面とを有する基板の前記第1面上に半導体チップを搭載し、
前記半導体チップ上に前記半導体チップの前記第1面を封止する樹脂部を形成し、
接地電位源に電気的に接続される導電性膜を、前記樹脂部の上面上および前記樹脂部の側面上に形成し、
酸素または窒素を含む雰囲気中において金属を前記導電性膜上に成膜することによって前記導電性膜上に金属酸化膜または金属窒化膜を形成することを具備する半導体装置の製造方法。 - 前記金属は、銅、クロム、鉄、ニッケル、チタン、アルミのいずれか少なくとも1つの材料を含み、
前記金属酸化膜は、酸化銅、酸化クロム、酸化鉄、酸化ニッケルのいずれか少なくとも1つの材料を含み、
前記金属窒化膜は、窒化チタンアルミを含む、請求項1に記載の方法。 - 前記導電性膜の形成は減圧雰囲気内で実行され、
前記金属酸化膜の形成は、前記導電性膜の形成工程における減圧雰囲気中において実行され、
前記金属窒化膜の形成は、前記導電性膜の形成工程における減圧雰囲気中において実行される、請求項1または請求項2に記載の方法。 - 前記導電性膜の形成と前記金属酸化膜または前記金属窒化膜の形成とは、同一チャンバ内において実行される、請求項1から請求項3のいずれか一項に記載の方法。
- 前記導電性膜の形成は、減圧状態にある第1チャンバ内で実行され、
前記基板の周囲の気圧を減圧状態に維持したまま、前記基板を減圧状態にある第2チャンバへ移動し、
前記金属酸化膜または前記金属窒化膜の形成は、前記第2チャンバ内で実行される、請求項1から請求項4のいずれか一項に記載の方法。 - 前記金属酸化膜は、前記金属をプラズマ酸化しながら前記導電性膜上にスパッタリング法で成膜し、
前記金属窒化膜は、前記金属をプラズマ窒化しながら前記導電性膜上にスパッタリング法で成膜する、請求項1から請求項5のいずれか一項に記載の方法。 - 第1面と、該第1面の反対側にある第2面と、前記第1面と前記第2面との間にある側面とを有する基板と、
前記第1面上に設けられた半導体チップと、
前記半導体チップ上と前記第1面上に設けられた樹脂部と、
前記樹脂部に設けられ接地電位源に電気的に接続可能な導電性膜と、
前記導電性膜上に設けられ、酸化銅、酸化クロム、酸化鉄、酸化ニッケル、窒化チタンアルミのいずれか少なくとも1つの材料を含む保護膜とを備えた半導体装置。
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