JP2017055003A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000012535 impurity Substances 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 238000010000 carbonizing Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 148
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 80
- 239000000758 substrate Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 12
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Abstract
【解決手段】実施形態の半導体装置は、p型のSiC領域と、p型のSiC領域上に設けられたゲート絶縁膜と、ゲート絶縁膜上に設けられ、p型不純物と3C−SiCを含むゲート電極と、を備える。
【選択図】図1
Description
本実施形態の半導体装置は、p型のSiC領域と、p型のSiC領域上に設けられたゲート絶縁膜と、ゲート絶縁膜上に設けられ、p型不純物と3C−SiCを含むゲート電極と、を備える。
本実施形態の半導体装置は、ゲート電極が3C−SiCと金属との積層構造である点以外は、第1の実施形態と同様である。また、本実施形態の半導体装置の製造方法は、ゲート電極の形成方法以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、トレンチゲート構造のMOSFETである点で第1の実施形態と異なる。第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、IGBT(Inulated Gate Bipolar Transistor)である点で第1の実施形態と異なる。第1の実施形態と重複する内容については記述を省略する。
17 シリコン膜
18 ゲート電極
26 ウェル領域(p型のSiC領域)
116 ゲート絶縁膜
118 ゲート電極
126 ベース領域(p型のSiC領域)
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
400 IGBT(半導体装置)
Claims (13)
- p型のSiC領域と、
前記p型のSiC領域上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられ、p型不純物と3C−SiCを含むゲート電極と、
を備える半導体装置。 - 前記ゲート電極は、少なくとも前記ゲート絶縁膜と接する領域に、前記p型不純物と前記3C−SiCを含む請求項1記載の半導体装置。
- 前記p型のSiC領域は4H−SiCである請求項1又は請求項2記載の半導体装置。
- 前記p型不純物はアルミニウム(Al)、ガリウム(Ga)又はインジウム(In)である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記ゲート電極中の前記p型不純物の濃度が1×1019cm−3以上である請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記p型のSiC領域中のp型不純物の濃度が1×1018cm−3以下である請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記ゲート電極中の前記3C−SiCの体積が、前記ゲート電極中の4H−SiCの体積よりも大きい請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜はシリコン酸化膜である請求項1乃至請求項7いずれか一項記載の半導体装置。
- p型のSiC領域上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に、1200℃以下の温度でp型不純物及び3C−SiCを含むゲート電極を形成する半導体装置の製造方法。 - 前記ゲート電極の形成は、1200℃以下の温度でのCVD(Chemical Vapor Deposition)法による前記p型不純物を含む3C−SiC層の堆積を含む請求項9記載の半導体装置の製造方法。
- 前記ゲート電極の形成は、前記p型不純物を含むシリコン膜の堆積と、前記シリコン膜を炭化する1200℃以下の温度での熱処理と、を含む請求項9記載の半導体装置の製造方法。
- 前記熱処理は、エタン(C2H6)、エチレン(C2H6)又はアセチレン(C2H2)を含む雰囲気中で行われる請求項11記載の半導体装置の製造方法。
- 前記p型不純物はアルミニウム(Al)、ガリウム(Ga)又はインジウム(In)である請求項9乃至請求項12いずれか一項記載の半導体装置の製造方法。
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JP2015179037A JP6526528B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置 |
US15/252,493 US20170077240A1 (en) | 2015-09-11 | 2016-08-31 | Semiconductor device and method for manufacturing the same |
US16/782,826 US11450745B2 (en) | 2015-09-11 | 2020-02-05 | Semiconductor device and method for manufacturing the same |
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JP2015179037A JP6526528B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置 |
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Cited By (5)
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---|---|---|---|---|
US9991358B2 (en) | 2015-09-11 | 2018-06-05 | Kabushiki Kaisha Toshiba | Semiconductor device with metal-insulator-semiconductor structure |
CN109443295A (zh) * | 2018-10-28 | 2019-03-08 | 北京工业大学 | 一种用于汽车级IGBT芯片表面Al金属化层粗糙度的测试方法 |
US10229994B2 (en) | 2015-09-11 | 2019-03-12 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2019161200A (ja) * | 2017-05-17 | 2019-09-19 | ローム株式会社 | 半導体装置 |
CN114420758A (zh) * | 2021-12-08 | 2022-04-29 | 西安理工大学 | 具有高阈值电压的SiC MOSFET及制造方法 |
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JP6526528B2 (ja) | 2019-06-05 |
US11450745B2 (en) | 2022-09-20 |
US20170077240A1 (en) | 2017-03-16 |
US20200176571A1 (en) | 2020-06-04 |
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