JP6180978B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6180978B2 JP6180978B2 JP2014059197A JP2014059197A JP6180978B2 JP 6180978 B2 JP6180978 B2 JP 6180978B2 JP 2014059197 A JP2014059197 A JP 2014059197A JP 2014059197 A JP2014059197 A JP 2014059197A JP 6180978 B2 JP6180978 B2 JP 6180978B2
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- 239000004065 semiconductor Substances 0.000 title claims description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 139
- 239000002184 metal Substances 0.000 claims description 139
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 112
- 229910052739 hydrogen Inorganic materials 0.000 claims description 108
- 239000001257 hydrogen Substances 0.000 claims description 108
- 238000010438 heat treatment Methods 0.000 claims description 101
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 45
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 229910052805 deuterium Inorganic materials 0.000 claims description 41
- 229910052799 carbon Inorganic materials 0.000 claims description 39
- 238000005468 ion implantation Methods 0.000 claims description 36
- UFHFLCQGNIYNRP-VVKOMZTBSA-N Dideuterium Chemical compound [2H][2H] UFHFLCQGNIYNRP-VVKOMZTBSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 324
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 311
- 239000010410 layer Substances 0.000 description 195
- 238000000137 annealing Methods 0.000 description 98
- 239000012535 impurity Substances 0.000 description 75
- 239000000758 substrate Substances 0.000 description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 40
- 239000007789 gas Substances 0.000 description 39
- 239000000463 material Substances 0.000 description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 13
- 239000010439 graphite Substances 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000005381 potential energy Methods 0.000 description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004913 activation Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Description
本実施形態の半導体装置は、p型のSiC層と、p型のSiC層に設けられ、H(水素)、或いはD(重水素)を1×1018cm−3以上1×1022cm−3以下含有するSiC領域と、SiC領域上に設けられる金属層と、を備える。
本実施形態の半導体装置は、n型のSiC層と、n型のSiC層に設けられ、H(水素)、或いはD(重水素)を1×1018cm−3以上1×1022cm−3以下含有し、H(水素)、或いはD(重水素)がSiCのC(炭素)サイトに位置するSiC領域と、SiC領域上に設けられる金属層と、を備える。
本実施形態の半導体装置は、半導体基板と、半導体基板の一方の側に設けられるn型のSiC層と、n型のSiC層に設けられるp型の第1のSiC領域と、p型の第1のSiC領域に設けられるn型の第2のSiC領域と、p型の第1のSiC領域に設けられるp型の第3のSiC領域と、n型の第2のSiC領域表面に設けられH(水素)を1×1018cm−3以上1×1022cm−3以下含有する第4のSiC領域と、p型の第3のSiC領域表面に設けられH(水素)を1×1018cm−3以上1×1022cm−3以下含有する第5のSiC領域と、n型のSiC層との間、および、第1のSiC領域との間にゲート絶縁膜を介して設けられるゲート電極と、第4および第5のSiC領域上に設けられる第1の電極と、半導体基板のn型のSiC層と反対側に設けられH(水素)、或いはD(重水素)を1×1018cm−3以上1×1022cm−3以下含有する第6のSiC領域と、第6のSiC領域に接して設けられる第2の電極と、を備える。
本実施形態の半導体装置は、MPS(Merged PIN Schottky)ダイオードを還流ダイオードとして内蔵する以外は、第3の実施形態と同様である。したがって、第3の実施形態と重複する内容については記述を省略する。
図22は、本実施形態の第1の変形例の半導体装置の模式断面図である。本変形例のMOSFET300は、pウェルコンタクト領域40の底部に、p+型半導体領域60を、さらに有する点で、第4の実施形態と異なっている。
図23は、本実施形態の第2の変形例の半導体装置の模式断面図である。本変形例のMOSFET400は、MPSダイオードが、いわゆる、transparent型であること以外は第4の実施形態と同様である。
14 SiC領域
16 金属層
22 n型のSiC層
24 SiC領域
26 金属層
Claims (12)
- p型のSiC層と、
前記p型のSiC層に設けられ、H(水素)、或いはD(重水素)を1×1018cm−3以上1×1022cm−3以下含有し、前記H(水素)、或いはD(重水素)がSiCのSi(シリコン)サイトに位置するSiC領域と、
前記SiC領域上に設けられる金属層と、
を備える半導体装置。 - 前記SiC領域が金属である請求項1記載の半導体装置。
- 前記SiC領域の仕事関数が6.0eV以上である請求項1又は請求項2記載の半導体装置。
- 前記SiC領域の膜厚が1nm以上である請求項1ないし請求項3いずれか一項記載の半導体装置。
- n型のSiC層と、
前記n型のSiC層に設けられ、H(水素)、或いはD(重水素)を1×1018cm−3以上1×1022cm−3以下含有し、前記H(水素)、或いはD(重水素)がSiCのC(炭素)サイトに位置するSiC領域と、
前記SiC領域上に設けられる金属層と、
を備える半導体装置。 - 前記SiC領域が金属である請求項5記載の半導体装置。
- 前記SiC領域の仕事関数が4.0eV以下である請求項5または請求項6記載の半導体装置。
- 前記SiC領域の膜厚が1nm以上であることを特徴とする請求項5ないし請求項7いずれか一項記載の半導体装置。
- p型のSiC層に、1×10 12 cm −2 以上1×10 16 cm −2 以下のドーズ量のH(水素)、或いは1×10 12 cm −2 以上1×10 16 cm −2 以下のドーズ量のD(重水素)と、C(炭素)をイオン注入し、
前記H(水素)、或いはD(重水素)とC(炭素)のイオン注入後に第1の熱処理を行い、前記H(水素)、或いはD(重水素)をSiCのSi(シリコン)サイトに位置させ、
前記第1の熱処理後に、前記SiC層上に金属層を形成する半導体装置の製造方法。 - 前記第1の熱処理をH(水素)、或いはD(重水素)含有雰囲気で行う請求項9記載の半導体装置の製造方法。
- 前記金属層を形成した後に、前記第1の熱処理よりも低温の第2の熱処理を行うことを特徴とする請求項10記載の製造方法。
- 前記第1の熱処理により前記SiC層表面を金属化する請求項10または請求項11記載の半導体装置の製造方法。
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