JP6246613B2 - 半導体装置およびその製造方法 - Google Patents
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Description
本実施形態の半導体装置は、半導体基板と、半導体基板の一方の側に設けられるn型のSiC層と、半導体基板との間にn型のSiC層を介して設けられるp型の第1のSiC領域と、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、La(ランタン)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群から選ばれる少なくとも一つの元素を含有し、n型のSiC層との間に第1のSiC領域を介して設けられ、第1のSiC領域と接する金属の第2のSiC領域と、n型のSiC層との間、および、第1のSiC領域との間にゲート絶縁膜を介して設けられるゲート電極と、第2のSiC領域上に設けられる第1の電極と、半導体基板のn型のSiC層と反対側に設けられる第2の電極と、を備える。
第1の実施形態の変形例の半導体装置は、二つのチャネルに跨ったn−型のSiC層14の一部が金属のSiCである。この半導体装置は、例えば、二つのチャネルに跨ったn−型のSiC層14に、Mg等をイオン注入することにより形成される。ソース領域18を形成する際に、同時に形成することが可能である。
本実施形態の半導体装置の製造方法は、熱処理の前に、第1のSiC領域にSi(シリコン)をイオン注入すること、および、一回の熱処理で、pウェルコンタクト領域(第3のSiC領域)の活性化とソース領域(第2のSiC領域)の金属化を行うこと以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置の製造方法は、pウェルコンタクトにAlイオン注入に加えてN(窒素)のイオン注入をすること、および、一回の熱処理で、pウェルコンタクト領域(第3のSiC領域)の活性化とソース領域(第2のSiC領域)の金属化を行うこと以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、ゲート絶縁膜とゲート電極がトレンチ内に形成される、いわゆるトレンチMOSFETであること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、半導体基板がn型半導体ではなくp型半導体であること、すなわちMOSFETではなくIGBTであること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
14 n型のSiC層(ドリフト層)
16 第1のSiC領域(pウェル領域)
18 第2のSiC領域(ソース領域)
20 第3のSiC領域(pウェルコンタクト領域)
24 第1の電極(ソース電極)
28 ゲート絶縁膜
30 ゲート電極
36 第2の電極(ドレイン電極)
100 MOSFET
200 MOSFET
300 IGBT
Claims (11)
- 半導体基板と、
前記半導体基板の一方の側に設けられるn型のSiC層と、
前記SiC層に設けられるp型の第1のSiC領域と、
前記第1のSiC領域に設けられ、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、La(ランタン)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群から選ばれる少なくとも一つの元素を含有する金属のSiCの第2のSiC領域と、
前記SiC層との間、および、前記第1のSiC領域との間にゲート絶縁膜を介して設けられるゲート電極と、
前記第2のSiC領域の上に設けられる第1の電極と、
前記半導体基板の前記SiC層と反対側に設けられる第2の電極と、
を備える半導体装置。 - 半導体基板と、
前記半導体基板の一方の側に設けられるn型のSiC層と、
前記SiC層に設けられるp型の第1のSiC領域と、
前記第1のSiC領域に設けられ、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、La(ランタン)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群から選ばれる少なくとも一つの元素を含有する金属の第2のSiC領域と、
前記SiC層との間、および、前記第1のSiC領域との間にゲート絶縁膜を介して設けられるゲート電極と、
前記第2のSiC領域の上に設けられる第1の電極と、
前記半導体基板の前記SiC層と反対側に設けられる第2の電極と、
を備え、
前記元素の前記第2のSiC領域中の濃度が、1×1018cm−3以上1×1022cm−3以下である半導体装置。 - 半導体基板と、
前記半導体基板の一方の側に設けられるn型のSiC層と、
前記SiC層に設けられるp型の第1のSiC領域と、
前記第1のSiC領域に設けられ、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、La(ランタン)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群から選ばれる少なくとも一つの元素を含有する金属の第2のSiC領域と、
前記SiC層との間、および、前記第1のSiC領域との間にゲート絶縁膜を介して設けられるゲート電極と、
前記第2のSiC領域の上に設けられる第1の電極と、
前記半導体基板の前記SiC層と反対側に設けられる第2の電極と、
を備え、
前記第2のSiC領域のシート抵抗が、0.5Ω/□以下である半導体装置。 - 半導体基板と、
前記半導体基板の一方の側に設けられるn型のSiC層と、
前記SiC層に設けられるp型の第1のSiC領域と、
前記第1のSiC領域に設けられ、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、La(ランタン)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群から選ばれる少なくとも一つの元素を含有する金属の第2のSiC領域と、
前記SiC層との間、および、前記第1のSiC領域との間にゲート絶縁膜を介して設けられるゲート電極と、
前記第2のSiC領域の上に設けられる第1の電極と、
前記半導体基板の前記SiC層と反対側に設けられる第2の電極と、
を備え、
前記第2のSiC領域の仕事関数が3.7eV以下である半導体装置。 - 前記元素がCa(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)またはY(イットリウム)である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記SiC層に設けられ、前記第1のSiC領域に接するp型の第3のSiC領域をさらに備え、前記第3のSiC領域の上に前記第1の電極が設けられる請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記半導体基板がn型半導体である請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記半導体基板がp型半導体である請求項1ないし請求項6いずれか一項記載の半導体装置。
- 半導体基板の一方の側にn型のSiC層を形成し、
前記SiC層にp型不純物をイオン注入してp型の第1のSiC領域を形成し、
前記SiC層、前記第1のSiC領域の上にゲート絶縁膜を形成し、
前記ゲート絶縁膜の上に設けられるゲート電極を形成し、
前記第1のSiC領域に、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、La(ランタン)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群から選ばれる少なくとも一つの元素をイオン注入し、
前記元素をイオン注入した後に、熱処理を行い、前記元素が注入された前記第1のSiC領域を金属化して第2のSiC領域を形成し、
前記第2のSiC領域の上に第1の電極を形成し、
前記半導体基板の前記SiC層と反対側に第2の電極を形成し、
前記第1のSiC領域に、p型不純物をイオン注入してp型の第3のSiC領域を形成し、前記第3のSiC領域の上に前記第1の電極を形成する半導体装置の製造方法。 - 半導体基板の一方の側にn型のSiC層を形成し、
前記SiC層にp型不純物をイオン注入してp型の第1のSiC領域を形成し、
前記SiC層、前記第1のSiC領域の上にゲート絶縁膜を形成し、
前記ゲート絶縁膜の上に設けられるゲート電極を形成し、
前記第1のSiC領域に、Mg(マグネシウム)、Ca(カルシウム)、Sr(ストロンチウム)、Ba(バリウム)、Sc(スカンジウム)、Y(イットリウム)、La(ランタン)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群から選ばれる少なくとも一つの元素をイオン注入し、
前記元素をイオン注入した後に、熱処理を行い、前記元素が注入された前記第1のSiC領域を金属化して第2のSiC領域を形成し、
前記第2のSiC領域の上に第1の電極を形成し、
前記半導体基板の前記SiC層と反対側に第2の電極を形成し、
前記熱処理の前に、前記第1のSiC領域に、Al(アルミニウム)とN(窒素)をイオン注入してp型の第3のSiC領域を形成する半導体装置の製造方法。 - 前記熱処理の前に、前記第1のSiC領域の前記元素をイオン注入する領域にSi(シリコン)をイオン注入する請求項9又は請求項10記載の半導体装置の製造方法。
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