JP2017050487A - 光結合装置 - Google Patents
光結合装置 Download PDFInfo
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- JP2017050487A JP2017050487A JP2015174611A JP2015174611A JP2017050487A JP 2017050487 A JP2017050487 A JP 2017050487A JP 2015174611 A JP2015174611 A JP 2015174611A JP 2015174611 A JP2015174611 A JP 2015174611A JP 2017050487 A JP2017050487 A JP 2017050487A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 43
- 230000008878 coupling Effects 0.000 title claims abstract description 39
- 238000010168 coupling process Methods 0.000 title claims abstract description 39
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 39
- 239000000853 adhesive Substances 0.000 claims description 30
- 230000001070 adhesive effect Effects 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 20
- 238000000576 coating method Methods 0.000 abstract description 20
- 230000002040 relaxant effect Effects 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 11
- 230000035882 stress Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000004668 long chain fatty acids Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
- H01L31/162—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. a light emitting diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
【課題】発光素子にかかる応力を緩和しつつ発光素子の光の利用効率を向上させることが可能な光結合装置を提供する。
【解決手段】実施形態によれば、光結合装置は、発光素子と、発光素子に対向する受光素子と、発光素子が設置された第1の面と、第1の面に対向する第2の面と、を有するリードフレームと、発光素子を覆う第1の被覆部材と、第1の被覆部材と、受光素子と、リードフレームと、を覆う第2の被覆部材と、第2の被覆部材を覆う第3の被覆部材であって、第2の被覆部材と第3の被覆部材の第1の接着強度と、第2の被覆部材と第2の面の第2の接着強度とのうちの少なくとも一方の接着強度が、第1の被覆部材と第2の被覆部材の第3の接着強度よりも低い第3の被覆部材と、を備える。
【選択図】図1
Description
前記発光素子に対向する受光素子と、
前記発光素子が設置された第1の面と、前記第1の面に対向する第2の面と、を有するリードフレームと、
前記発光素子を覆う第1の被覆部材と、
前記第1の被覆部材と、前記受光素子と、前記第1の面と、前記第2の面と、を覆う第2の被覆部材と、
前記第2の被覆部材を覆う第3の被覆部材であって、前記第2の被覆部材と前記第3の被覆部材の第1の接着強度と、前記第2の被覆部材と前記第2の面の第2の接着強度とのうちの少なくとも一方の接着強度が、前記第1の被覆部材と前記第2の被覆部材の第3の接着強度よりも低い第3の被覆部材と、
を備える光結合装置が提供される。
図1は、第1の実施形態に係る光結合装置の概略的な構成を示す平面図である。また、図2は、図1に示す切断線A−Aに沿った断面図である。さらに、図3は、図2に示す領域Rの拡大図である。
第2の実施形態について、第1の実施形態と異なる点を中心に説明する。図5(a)は、第2の実施形態に係る光結合装置の一部を拡大した断面図であり、図5(b)は、図5(a)に示す光結合装置において、リードフレーム12と第2の被覆部材15とが剥離した状態を示す断面図である。
以下、第2の実施形態の変形例について説明する。図6(a)は第2の実施形態の変形例に係る光結合装置の一部を拡大した断面図であり、図6(b)は図6(a)に示す光結合装置において、リードフレーム12と第2の被覆部材15が剥離した状態を示す断面図である。
Claims (8)
- 発光素子と、
前記発光素子に対向する受光素子と、
前記発光素子が設置された第1の面と、前記第1の面に対向する第2の面と、を有するリードフレームと、
前記発光素子を覆う第1の被覆部材と、
前記第1の被覆部材と、前記受光素子と、前記リードフレームと、を覆う第2の被覆部材と、
前記第2の被覆部材を覆う第3の被覆部材であって、前記第2の被覆部材と前記第3の被覆部材の第1の接着強度と、前記第2の被覆部材と前記第2の面の第2の接着強度とのうちの少なくとも一方の接着強度が、前記第1の被覆部材と前記第2の被覆部材の第3の接着強度よりも低い第3の被覆部材と、
を備える光結合装置。 - 前記第2の被覆部材と前記第3の被覆部材との間、または前記第2の被覆部材と前記第2の面との間に離型剤が含まれている、請求項1に記載の光結合装置。
- 前記離型剤が、前記第2の被覆部材と前記第3の被覆部材との間における、前記第2の面に対向する領域に含まれている、請求項2に記載の光結合装置。
- 前記第2の接着強度が、前記第2の被覆部材と前記第1の面の接着強度よりも低い、請求項1に記載の光結合装置。
- 前記第2の面の表面粗さが、前記第1の面の表面粗さよりも大きい、請求項4に記載の光結合装置。
- 前記第1の接着強度が前記第2の接着強度よりも低い、請求項1に記載の光結合装置。
- 前記第2の被覆部材と前記第1の面の第4の接着強度は、前記第3の接着強度よりも低い、請求項1に記載の光結合装置。
- 発光素子と、
前記発光素子に対向する受光素子と、
前記発光素子が設置された第1の面と、前記第1の面に対向する第2の面と、を有するリードフレームと、
前記発光素子を覆うシリコン樹脂と、
前記シリコン樹脂と、前記受光素子と、前記リードフレームと、を覆う透明樹脂と、
前記透明樹脂を覆う遮光樹脂と、
前記透明樹脂と前記遮光樹脂の間と、前記透明樹脂と前記第2の面の間の少なくとも一方に設けられた有機物と、
を備える光結合装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015174611A JP6445947B2 (ja) | 2015-09-04 | 2015-09-04 | 光結合装置 |
TW105105546A TWI604629B (zh) | 2015-09-04 | 2016-02-24 | Optical coupling device |
CN201610115546.0A CN106501905B (zh) | 2015-09-04 | 2016-03-01 | 光耦合装置 |
US15/061,999 US10008626B2 (en) | 2015-09-04 | 2016-03-04 | Optical coupling device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015174611A JP6445947B2 (ja) | 2015-09-04 | 2015-09-04 | 光結合装置 |
Publications (2)
Publication Number | Publication Date |
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JP2017050487A true JP2017050487A (ja) | 2017-03-09 |
JP6445947B2 JP6445947B2 (ja) | 2018-12-26 |
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JP2015174611A Active JP6445947B2 (ja) | 2015-09-04 | 2015-09-04 | 光結合装置 |
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US (1) | US10008626B2 (ja) |
JP (1) | JP6445947B2 (ja) |
CN (1) | CN106501905B (ja) |
TW (1) | TWI604629B (ja) |
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JPH05145111A (ja) * | 1991-05-17 | 1993-06-11 | Philips Gloeilampenfab:Nv | オプトエレクトロニツク−カツプラ |
US5614131A (en) * | 1995-05-01 | 1997-03-25 | Motorola, Inc. | Method of making an optoelectronic device |
JPH11233811A (ja) * | 1998-02-17 | 1999-08-27 | Sharp Corp | 光結合装置及びその製造方法 |
JP2009064907A (ja) * | 2007-09-05 | 2009-03-26 | Sharp Corp | 光結合半導体装置 |
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US10008626B2 (en) | 2018-06-26 |
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