JP2016534574A5 - - Google Patents

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Publication number
JP2016534574A5
JP2016534574A5 JP2016540885A JP2016540885A JP2016534574A5 JP 2016534574 A5 JP2016534574 A5 JP 2016534574A5 JP 2016540885 A JP2016540885 A JP 2016540885A JP 2016540885 A JP2016540885 A JP 2016540885A JP 2016534574 A5 JP2016534574 A5 JP 2016534574A5
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JP
Japan
Prior art keywords
core
length
transistor
gate
semiconductor die
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JP2016540885A
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English (en)
Japanese (ja)
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JP2016534574A (ja
JP6360175B2 (ja
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Priority claimed from US14/017,635 external-priority patent/US9076775B2/en
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Publication of JP2016534574A publication Critical patent/JP2016534574A/ja
Publication of JP2016534574A5 publication Critical patent/JP2016534574A5/ja
Application granted granted Critical
Publication of JP6360175B2 publication Critical patent/JP6360175B2/ja
Expired - Fee Related legal-status Critical Current
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JP2016540885A 2013-09-04 2014-07-30 複数のコアのゲート長を変動させるシステムおよび方法 Expired - Fee Related JP6360175B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/017,635 2013-09-04
US14/017,635 US9076775B2 (en) 2013-09-04 2013-09-04 System and method of varying gate lengths of multiple cores
PCT/US2014/048944 WO2015034602A1 (en) 2013-09-04 2014-07-30 System and method of varying gate lengths of multiple cores

Publications (3)

Publication Number Publication Date
JP2016534574A JP2016534574A (ja) 2016-11-04
JP2016534574A5 true JP2016534574A5 (enExample) 2017-08-17
JP6360175B2 JP6360175B2 (ja) 2018-07-18

Family

ID=51454951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016540885A Expired - Fee Related JP6360175B2 (ja) 2013-09-04 2014-07-30 複数のコアのゲート長を変動させるシステムおよび方法

Country Status (5)

Country Link
US (2) US9076775B2 (enExample)
EP (1) EP3042393A1 (enExample)
JP (1) JP6360175B2 (enExample)
CN (1) CN105518847A (enExample)
WO (1) WO2015034602A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9076775B2 (en) 2013-09-04 2015-07-07 Qualcomm Incorporated System and method of varying gate lengths of multiple cores
JP6513450B2 (ja) * 2015-03-26 2019-05-15 三重富士通セミコンダクター株式会社 半導体装置
CN108052838B (zh) * 2017-11-23 2021-12-07 北京智芯微电子科技有限公司 芯片加密设计的泄漏定位系统及方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600578A (en) 1993-08-02 1997-02-04 Advanced Micro Devices, Inc. Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
JP3152642B2 (ja) 1998-01-29 2001-04-03 三洋電機株式会社 半導体集積回路装置
JP2003282823A (ja) 2002-03-26 2003-10-03 Toshiba Corp 半導体集積回路
US6912705B2 (en) * 2002-06-27 2005-06-28 Sun Microsystems, Inc. Method and apparatus for performing operation on physical design data
WO2005112088A1 (ja) * 2004-05-14 2005-11-24 Matsushita Electric Industrial Co., Ltd. 半導体装置の製造方法および製造装置
US7200824B1 (en) 2004-11-16 2007-04-03 Altera Corporation Performance/power mapping of a die
JP2007081249A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008124393A (ja) * 2006-11-15 2008-05-29 Renesas Technology Corp 半導体装置の製造方法
JP5561922B2 (ja) * 2008-05-20 2014-07-30 三菱電機株式会社 パワー半導体装置
US8302064B1 (en) 2009-03-10 2012-10-30 Xilinx, Inc. Method of product performance improvement by selective feature sizing of semiconductor devices
US8447547B2 (en) * 2009-06-17 2013-05-21 Qualcomm Incorporated Static noise margin estimation
US8924975B2 (en) * 2009-07-23 2014-12-30 Empire Technology Development Llc Core selection for applications running on multiprocessor systems based on core and application characteristics
US8390331B2 (en) 2009-12-29 2013-03-05 Nxp B.V. Flexible CMOS library architecture for leakage power and variability reduction
JP2011253931A (ja) * 2010-06-02 2011-12-15 Panasonic Corp 半導体装置及びその製造方法
US20120042292A1 (en) 2010-08-10 2012-02-16 Stmicroelectronics S.A. Method of synthesis of an electronic circuit
JP5592210B2 (ja) * 2010-09-09 2014-09-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8610176B2 (en) 2011-01-11 2013-12-17 Qualcomm Incorporated Standard cell architecture using double poly patterning for multi VT devices
JP2013030602A (ja) 2011-07-28 2013-02-07 Panasonic Corp 半導体集積回路装置
US20130086395A1 (en) 2011-09-30 2013-04-04 Qualcomm Incorporated Multi-Core Microprocessor Reliability Optimization
US9076775B2 (en) 2013-09-04 2015-07-07 Qualcomm Incorporated System and method of varying gate lengths of multiple cores

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