JP6360175B2 - 複数のコアのゲート長を変動させるシステムおよび方法 - Google Patents

複数のコアのゲート長を変動させるシステムおよび方法 Download PDF

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JP6360175B2
JP6360175B2 JP2016540885A JP2016540885A JP6360175B2 JP 6360175 B2 JP6360175 B2 JP 6360175B2 JP 2016540885 A JP2016540885 A JP 2016540885A JP 2016540885 A JP2016540885 A JP 2016540885A JP 6360175 B2 JP6360175 B2 JP 6360175B2
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core
length
transistor
gate
semiconductor die
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JP2016540885A
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Japanese (ja)
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JP2016534574A5 (enExample
JP2016534574A (ja
Inventor
ミン・チャイ
サミット・セングプタ
チョック・ヒン・ガン
プル・チダムバラム
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2016540885A 2013-09-04 2014-07-30 複数のコアのゲート長を変動させるシステムおよび方法 Expired - Fee Related JP6360175B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/017,635 2013-09-04
US14/017,635 US9076775B2 (en) 2013-09-04 2013-09-04 System and method of varying gate lengths of multiple cores
PCT/US2014/048944 WO2015034602A1 (en) 2013-09-04 2014-07-30 System and method of varying gate lengths of multiple cores

Publications (3)

Publication Number Publication Date
JP2016534574A JP2016534574A (ja) 2016-11-04
JP2016534574A5 JP2016534574A5 (enExample) 2017-08-17
JP6360175B2 true JP6360175B2 (ja) 2018-07-18

Family

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Application Number Title Priority Date Filing Date
JP2016540885A Expired - Fee Related JP6360175B2 (ja) 2013-09-04 2014-07-30 複数のコアのゲート長を変動させるシステムおよび方法

Country Status (5)

Country Link
US (2) US9076775B2 (enExample)
EP (1) EP3042393A1 (enExample)
JP (1) JP6360175B2 (enExample)
CN (1) CN105518847A (enExample)
WO (1) WO2015034602A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9076775B2 (en) 2013-09-04 2015-07-07 Qualcomm Incorporated System and method of varying gate lengths of multiple cores
JP6513450B2 (ja) * 2015-03-26 2019-05-15 三重富士通セミコンダクター株式会社 半導体装置
CN108052838B (zh) * 2017-11-23 2021-12-07 北京智芯微电子科技有限公司 芯片加密设计的泄漏定位系统及方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600578A (en) 1993-08-02 1997-02-04 Advanced Micro Devices, Inc. Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
JP3152642B2 (ja) 1998-01-29 2001-04-03 三洋電機株式会社 半導体集積回路装置
JP2003282823A (ja) 2002-03-26 2003-10-03 Toshiba Corp 半導体集積回路
US6912705B2 (en) * 2002-06-27 2005-06-28 Sun Microsystems, Inc. Method and apparatus for performing operation on physical design data
WO2005112088A1 (ja) * 2004-05-14 2005-11-24 Matsushita Electric Industrial Co., Ltd. 半導体装置の製造方法および製造装置
US7200824B1 (en) 2004-11-16 2007-04-03 Altera Corporation Performance/power mapping of a die
JP2007081249A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008124393A (ja) * 2006-11-15 2008-05-29 Renesas Technology Corp 半導体装置の製造方法
JP5561922B2 (ja) * 2008-05-20 2014-07-30 三菱電機株式会社 パワー半導体装置
US8302064B1 (en) 2009-03-10 2012-10-30 Xilinx, Inc. Method of product performance improvement by selective feature sizing of semiconductor devices
US8447547B2 (en) * 2009-06-17 2013-05-21 Qualcomm Incorporated Static noise margin estimation
US8924975B2 (en) * 2009-07-23 2014-12-30 Empire Technology Development Llc Core selection for applications running on multiprocessor systems based on core and application characteristics
US8390331B2 (en) 2009-12-29 2013-03-05 Nxp B.V. Flexible CMOS library architecture for leakage power and variability reduction
JP2011253931A (ja) * 2010-06-02 2011-12-15 Panasonic Corp 半導体装置及びその製造方法
US20120042292A1 (en) 2010-08-10 2012-02-16 Stmicroelectronics S.A. Method of synthesis of an electronic circuit
JP5592210B2 (ja) * 2010-09-09 2014-09-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8610176B2 (en) 2011-01-11 2013-12-17 Qualcomm Incorporated Standard cell architecture using double poly patterning for multi VT devices
JP2013030602A (ja) 2011-07-28 2013-02-07 Panasonic Corp 半導体集積回路装置
US20130086395A1 (en) 2011-09-30 2013-04-04 Qualcomm Incorporated Multi-Core Microprocessor Reliability Optimization
US9076775B2 (en) 2013-09-04 2015-07-07 Qualcomm Incorporated System and method of varying gate lengths of multiple cores

Also Published As

Publication number Publication date
US20150061037A1 (en) 2015-03-05
WO2015034602A1 (en) 2015-03-12
EP3042393A1 (en) 2016-07-13
JP2016534574A (ja) 2016-11-04
US20150311198A1 (en) 2015-10-29
CN105518847A (zh) 2016-04-20
US9461040B2 (en) 2016-10-04
US9076775B2 (en) 2015-07-07

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