JP2017516313A5 - - Google Patents

Download PDF

Info

Publication number
JP2017516313A5
JP2017516313A5 JP2016567790A JP2016567790A JP2017516313A5 JP 2017516313 A5 JP2017516313 A5 JP 2017516313A5 JP 2016567790 A JP2016567790 A JP 2016567790A JP 2016567790 A JP2016567790 A JP 2016567790A JP 2017516313 A5 JP2017516313 A5 JP 2017516313A5
Authority
JP
Japan
Prior art keywords
islands
metal
random access
access memory
static random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016567790A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017516313A (ja
JP6625562B2 (ja
Filing date
Publication date
Priority claimed from US14/281,710 external-priority patent/US9318564B2/en
Application filed filed Critical
Publication of JP2017516313A publication Critical patent/JP2017516313A/ja
Publication of JP2017516313A5 publication Critical patent/JP2017516313A5/ja
Application granted granted Critical
Publication of JP6625562B2 publication Critical patent/JP6625562B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016567790A 2014-05-19 2015-04-20 先進的金属パターニングを有する高密度スタティックランダムアクセスメモリアレイ Active JP6625562B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/281,710 2014-05-19
US14/281,710 US9318564B2 (en) 2014-05-19 2014-05-19 High density static random access memory array having advanced metal patterning
PCT/US2015/026588 WO2015179050A1 (en) 2014-05-19 2015-04-20 High density static random access memory array having advanced metal patterning

Publications (3)

Publication Number Publication Date
JP2017516313A JP2017516313A (ja) 2017-06-15
JP2017516313A5 true JP2017516313A5 (enExample) 2018-05-24
JP6625562B2 JP6625562B2 (ja) 2019-12-25

Family

ID=53015968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016567790A Active JP6625562B2 (ja) 2014-05-19 2015-04-20 先進的金属パターニングを有する高密度スタティックランダムアクセスメモリアレイ

Country Status (7)

Country Link
US (1) US9318564B2 (enExample)
EP (1) EP3146564B1 (enExample)
JP (1) JP6625562B2 (enExample)
KR (1) KR102231182B1 (enExample)
CN (1) CN106463502B (enExample)
ES (1) ES2875037T3 (enExample)
WO (1) WO2015179050A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9029230B2 (en) 2013-01-31 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive line routing for multi-patterning technology
DE102016114714A1 (de) 2015-10-20 2017-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Speichervorrichtung und Verfahren zu ihrer Herstellung
US10411019B2 (en) * 2015-10-20 2019-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell word line structure with reduced RC effects
US9923140B2 (en) * 2016-04-20 2018-03-20 Sandisk Technologies Llc Low power barrier modulated cell for storage class memory
US10217703B2 (en) * 2017-01-03 2019-02-26 Xilinx, Inc. Circuits for and methods of implementing an inductor and a pattern ground shield in an integrated circuit
US10923425B2 (en) * 2017-01-20 2021-02-16 Arm Limited Power distribution
US10361080B2 (en) 2017-07-04 2019-07-23 United Microelectronics Corp. Patterning method
US10790395B2 (en) 2018-06-12 2020-09-29 International Business Machines Corporation finFET with improved nitride to fin spacing
US10770657B2 (en) 2018-08-14 2020-09-08 Newport Fab, Llc High reliability phase-change material (PCM) radio frequency (RF) switch using trap-rich region
US10686128B2 (en) 2018-08-14 2020-06-16 Newport Fab, Llc Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated passive devices
US10862477B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US10686010B2 (en) 2018-08-14 2020-06-16 Newport Fab, Llc Fabrication of semiconductor device using a shared material in a phase-change material (PCM) switch region and a resonator region
US10566321B1 (en) 2018-08-14 2020-02-18 Newport Fab, Llc Wafer-to-wafer and die-to-wafer bonding of phase-change material (PCM) switches with integrated circuits and bonded two-die devices
US10476001B1 (en) 2018-08-14 2019-11-12 Newport Fab, Llc Manufacturing RF switch based on phase-change material
US10833004B2 (en) 2018-08-14 2020-11-10 Newport Fab, Llc Dba Jazz Semiconductor Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors
US10937960B2 (en) 2018-08-14 2021-03-02 Newport Fab, Llc Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
US11057019B2 (en) 2018-08-14 2021-07-06 Newport Fab, Llc Non-volatile adjustable phase shifter using non-volatile radio frequency (RF) switch
US10529922B1 (en) 2018-08-14 2020-01-07 Newport Fab, Llc Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switches
US10916540B2 (en) 2018-08-14 2021-02-09 Newport Fab, Llc Device including PCM RF switch integrated with group III-V semiconductors
US10454027B1 (en) 2018-08-14 2019-10-22 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layers
US10944052B2 (en) 2018-08-14 2021-03-09 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer
US10475993B1 (en) 2018-08-14 2019-11-12 Newport Fab, Llc PCM RF switch fabrication with subtractively formed heater
US10862032B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch
US10461253B1 (en) 2018-08-14 2019-10-29 Newport Fab, Llc High reliability RF switch based on phase-change material
US10749109B2 (en) 2018-08-14 2020-08-18 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing and characterization of resistivity change of heating element in phase-change material (PCM) radio frequency (RF) switch
US10739290B2 (en) 2018-08-14 2020-08-11 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing and characterization of conductivity skew of phase-change material (PCM) in PCM radio frequency (RF) switches
US11159145B2 (en) 2018-08-14 2021-10-26 Newport Fab, Llc Radio frequency (RF) filtering using phase-change material (PCM) RF switches
US10686130B2 (en) 2018-08-14 2020-06-16 Newport Fab, Llc Phase-change material (PCM) contact configurations for improving performance in PCM RF switches
US10707125B2 (en) 2018-08-14 2020-07-07 Newport Fab, Llc Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element
US10693061B2 (en) 2018-08-14 2020-06-23 Newport Fab, Llc Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated active devices
US10615338B2 (en) 2018-08-14 2020-04-07 Newport Fab, Llc Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches
US10770389B2 (en) 2018-08-14 2020-09-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals
US11196401B2 (en) 2018-08-14 2021-12-07 Newport Fab, Llc Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches
US10916585B2 (en) * 2018-08-14 2021-02-09 Newport Fab, Llc Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handling
US10978639B2 (en) 2018-08-14 2021-04-13 Newport Fab, Llc Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
US11050022B2 (en) 2018-08-14 2021-06-29 Newport Fab, Llc Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance
US11521676B2 (en) * 2020-04-30 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM structure with asymmetric interconnection
US12080608B2 (en) 2020-07-17 2024-09-03 Synopsys, Inc. Self-limiting manufacturing techniques to prevent electrical shorts in a complementary field effect transistor (CFET)
US11915984B2 (en) 2020-07-17 2024-02-27 Synopsys, Inc. Forming a wrap-around contact to connect a source or drain epitaxial growth of a complimentary field effect transistor (CFET) to a buried power rail (BPR) of the CFET
US11710634B2 (en) * 2020-07-17 2023-07-25 Synopsys, Inc. Fabrication technique for forming ultra-high density integrated circuit components
US11742247B2 (en) 2020-07-17 2023-08-29 Synopsys, Inc. Epitaxial growth of source and drain materials in a complementary field effect transistor (CFET)
US20220302129A1 (en) * 2021-03-10 2022-09-22 Invention And Collaboration Laboratory Pte. Ltd. SRAM Cell Structures
US20250220868A1 (en) * 2024-01-03 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of operating the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW317643B (enExample) * 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
US6235560B1 (en) * 1999-08-16 2001-05-22 Agere Systems Guardian Corp. Silicon-germanium transistor and associated methods
US6787469B2 (en) 2001-12-28 2004-09-07 Texas Instruments Incorporated Double pattern and etch of poly with hard mask
US7927782B2 (en) 2007-12-28 2011-04-19 Texas Instruments Incorporated Simplified double mask patterning system
US20090189227A1 (en) * 2008-01-25 2009-07-30 Toshiba America Electronic Components, Inc. Structures of sram bit cells
US20090189198A1 (en) * 2008-01-25 2009-07-30 Toshiba America Electronic Components, Inc. Structures of sram bit cells
US7879727B2 (en) 2009-01-15 2011-02-01 Infineon Technologies Ag Method of fabricating a semiconductor device including a pattern of line segments
US8222698B2 (en) * 2009-06-29 2012-07-17 Analog Devices, Inc. Bond pad with integrated transient over-voltage protection
US20120280324A1 (en) * 2010-11-03 2012-11-08 Texas Instruments Incorporated Sram structure and process with improved stability
US10181474B2 (en) 2011-09-19 2019-01-15 Texas Instruments Incorporated SRAM layout for double patterning
US9152039B2 (en) * 2011-10-18 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple patterning technology method and system for achieving minimal pattern mismatch
JP6087506B2 (ja) 2012-01-31 2017-03-01 キヤノン株式会社 描画方法及び物品の製造方法
US9036404B2 (en) 2012-03-30 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for SRAM cell structure
US8976573B2 (en) * 2012-04-13 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for SRAM cells
US8823178B2 (en) * 2012-09-14 2014-09-02 Globalfoundries Inc. Bit cell with double patterned metal layer structures
US8830732B2 (en) * 2012-11-30 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cell comprising FinFETs
US9245595B2 (en) * 2013-12-20 2016-01-26 Nvidia Corporation System and method for performing SRAM access assists using VSS boost

Similar Documents

Publication Publication Date Title
JP2017516313A5 (enExample)
EP4220719A3 (en) Fin patterning for advanced integrated circuit structure fabrication
GB2526463A (en) Leakage reduction structures for nanowire transistors
JP2016534572A5 (enExample)
US9704737B2 (en) Semiconductor device and method for fabricating the same
US9691868B2 (en) Merging lithography processes for gate patterning
JP2017501586A5 (enExample)
JP2015502039A5 (enExample)
GB2549685A (en) Dual fin integration for electron and hole mobility enhancement
CN103515390A (zh) 包括具有不同鳍轮廓的finfet的集成电路
GB2556260A (en) Vertical transistor fabrication and devices
EP3343614A3 (en) Standard cell for vertical transistors
GB2549621A (en) Bottom-up metal gate formation on replacement metal gate finfet devices
US9425252B1 (en) Process for single diffusion break with simplified process
JP2016516301A5 (enExample)
TW201613097A (en) Semiconductor device and method of fabricating non-planar circuit device
JP2013122580A5 (ja) 表示装置の作製方法
TW201614805A (en) Densely packed standard cells for integrated circuit products
WO2013028685A3 (en) Semiconductor device structures including vertical transistor devices, arrays of vertical transistor devices, and methods of fabrication
WO2007120293A3 (en) Process for forming an electronic device including a fin-type structure
JP2011192973A5 (ja) トランジスタの作製方法
EP2704188A3 (en) Semiconductor device and method of fabricating the same
JP2016540378A5 (enExample)
TW200943473A (en) Method for fabricating pitch-doubling pillar structures
JP2015505643A5 (enExample)