ES2875037T3 - Matriz de memoria estática de acceso aleatorio de alta densidad con patrones metálicos avanzados - Google Patents

Matriz de memoria estática de acceso aleatorio de alta densidad con patrones metálicos avanzados Download PDF

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Publication number
ES2875037T3
ES2875037T3 ES15719395T ES15719395T ES2875037T3 ES 2875037 T3 ES2875037 T3 ES 2875037T3 ES 15719395 T ES15719395 T ES 15719395T ES 15719395 T ES15719395 T ES 15719395T ES 2875037 T3 ES2875037 T3 ES 2875037T3
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Spain
Prior art keywords
islands
lines
metal
forming
metallic
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Active
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ES15719395T
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English (en)
Spanish (es)
Inventor
Niladri Mojumder
Stanley Seungchul Song
Zhongze Wang
Choh Fei Yeap
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Qualcomm Inc
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Qualcomm Inc
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Publication of ES2875037T3 publication Critical patent/ES2875037T3/es
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Semiconductor Memories (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
ES15719395T 2014-05-19 2015-04-20 Matriz de memoria estática de acceso aleatorio de alta densidad con patrones metálicos avanzados Active ES2875037T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/281,710 US9318564B2 (en) 2014-05-19 2014-05-19 High density static random access memory array having advanced metal patterning
PCT/US2015/026588 WO2015179050A1 (en) 2014-05-19 2015-04-20 High density static random access memory array having advanced metal patterning

Publications (1)

Publication Number Publication Date
ES2875037T3 true ES2875037T3 (es) 2021-11-08

Family

ID=53015968

Family Applications (1)

Application Number Title Priority Date Filing Date
ES15719395T Active ES2875037T3 (es) 2014-05-19 2015-04-20 Matriz de memoria estática de acceso aleatorio de alta densidad con patrones metálicos avanzados

Country Status (7)

Country Link
US (1) US9318564B2 (enExample)
EP (1) EP3146564B1 (enExample)
JP (1) JP6625562B2 (enExample)
KR (1) KR102231182B1 (enExample)
CN (1) CN106463502B (enExample)
ES (1) ES2875037T3 (enExample)
WO (1) WO2015179050A1 (enExample)

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US10862477B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
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US10566321B1 (en) 2018-08-14 2020-02-18 Newport Fab, Llc Wafer-to-wafer and die-to-wafer bonding of phase-change material (PCM) switches with integrated circuits and bonded two-die devices
US10476001B1 (en) 2018-08-14 2019-11-12 Newport Fab, Llc Manufacturing RF switch based on phase-change material
US10833004B2 (en) 2018-08-14 2020-11-10 Newport Fab, Llc Dba Jazz Semiconductor Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors
US10937960B2 (en) 2018-08-14 2021-03-02 Newport Fab, Llc Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
US11057019B2 (en) 2018-08-14 2021-07-06 Newport Fab, Llc Non-volatile adjustable phase shifter using non-volatile radio frequency (RF) switch
US10529922B1 (en) 2018-08-14 2020-01-07 Newport Fab, Llc Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switches
US10916540B2 (en) 2018-08-14 2021-02-09 Newport Fab, Llc Device including PCM RF switch integrated with group III-V semiconductors
US10454027B1 (en) 2018-08-14 2019-10-22 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layers
US10944052B2 (en) 2018-08-14 2021-03-09 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer
US10475993B1 (en) 2018-08-14 2019-11-12 Newport Fab, Llc PCM RF switch fabrication with subtractively formed heater
US10862032B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch
US10461253B1 (en) 2018-08-14 2019-10-29 Newport Fab, Llc High reliability RF switch based on phase-change material
US10749109B2 (en) 2018-08-14 2020-08-18 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing and characterization of resistivity change of heating element in phase-change material (PCM) radio frequency (RF) switch
US10739290B2 (en) 2018-08-14 2020-08-11 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing and characterization of conductivity skew of phase-change material (PCM) in PCM radio frequency (RF) switches
US11159145B2 (en) 2018-08-14 2021-10-26 Newport Fab, Llc Radio frequency (RF) filtering using phase-change material (PCM) RF switches
US10686130B2 (en) 2018-08-14 2020-06-16 Newport Fab, Llc Phase-change material (PCM) contact configurations for improving performance in PCM RF switches
US10707125B2 (en) 2018-08-14 2020-07-07 Newport Fab, Llc Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element
US10693061B2 (en) 2018-08-14 2020-06-23 Newport Fab, Llc Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated active devices
US10615338B2 (en) 2018-08-14 2020-04-07 Newport Fab, Llc Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches
US10770389B2 (en) 2018-08-14 2020-09-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals
US11196401B2 (en) 2018-08-14 2021-12-07 Newport Fab, Llc Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches
US10916585B2 (en) * 2018-08-14 2021-02-09 Newport Fab, Llc Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handling
US10978639B2 (en) 2018-08-14 2021-04-13 Newport Fab, Llc Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
US11050022B2 (en) 2018-08-14 2021-06-29 Newport Fab, Llc Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance
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US20220302129A1 (en) * 2021-03-10 2022-09-22 Invention And Collaboration Laboratory Pte. Ltd. SRAM Cell Structures
US20250220868A1 (en) * 2024-01-03 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of operating the same

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Also Published As

Publication number Publication date
EP3146564B1 (en) 2021-05-26
WO2015179050A1 (en) 2015-11-26
KR102231182B1 (ko) 2021-03-22
EP3146564A1 (en) 2017-03-29
CN106463502B (zh) 2019-12-20
CN106463502A (zh) 2017-02-22
KR20170005005A (ko) 2017-01-11
JP2017516313A (ja) 2017-06-15
US9318564B2 (en) 2016-04-19
US20150333131A1 (en) 2015-11-19
JP6625562B2 (ja) 2019-12-25

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