KR102231182B1 - 어드밴스드 금속 패터닝을 갖는 고밀도 정적 랜덤 액세스 메모리 어레이 - Google Patents

어드밴스드 금속 패터닝을 갖는 고밀도 정적 랜덤 액세스 메모리 어레이 Download PDF

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KR102231182B1
KR102231182B1 KR1020167031716A KR20167031716A KR102231182B1 KR 102231182 B1 KR102231182 B1 KR 102231182B1 KR 1020167031716 A KR1020167031716 A KR 1020167031716A KR 20167031716 A KR20167031716 A KR 20167031716A KR 102231182 B1 KR102231182 B1 KR 102231182B1
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metal
metal lines
random access
access memory
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KR20170005005A (ko
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닐라드리 모줌더
스탠리 승철 송
총제 왕
초 페이 옙
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퀄컴 인코포레이티드
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    • H01L27/1104—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H01L27/0207—
    • H01L29/161—
    • H01L29/401—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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KR1020167031716A 2014-05-19 2015-04-20 어드밴스드 금속 패터닝을 갖는 고밀도 정적 랜덤 액세스 메모리 어레이 Active KR102231182B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/281,710 2014-05-19
US14/281,710 US9318564B2 (en) 2014-05-19 2014-05-19 High density static random access memory array having advanced metal patterning
PCT/US2015/026588 WO2015179050A1 (en) 2014-05-19 2015-04-20 High density static random access memory array having advanced metal patterning

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KR20170005005A KR20170005005A (ko) 2017-01-11
KR102231182B1 true KR102231182B1 (ko) 2021-03-22

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US (1) US9318564B2 (enExample)
EP (1) EP3146564B1 (enExample)
JP (1) JP6625562B2 (enExample)
KR (1) KR102231182B1 (enExample)
CN (1) CN106463502B (enExample)
ES (1) ES2875037T3 (enExample)
WO (1) WO2015179050A1 (enExample)

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US10862032B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch
US10686010B2 (en) 2018-08-14 2020-06-16 Newport Fab, Llc Fabrication of semiconductor device using a shared material in a phase-change material (PCM) switch region and a resonator region
US10862477B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US10749109B2 (en) 2018-08-14 2020-08-18 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing and characterization of resistivity change of heating element in phase-change material (PCM) radio frequency (RF) switch
US11196401B2 (en) 2018-08-14 2021-12-07 Newport Fab, Llc Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches
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US11050022B2 (en) 2018-08-14 2021-06-29 Newport Fab, Llc Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance
US10707125B2 (en) 2018-08-14 2020-07-07 Newport Fab, Llc Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element
US10937960B2 (en) 2018-08-14 2021-03-02 Newport Fab, Llc Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
US10978639B2 (en) 2018-08-14 2021-04-13 Newport Fab, Llc Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
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EP3146564B1 (en) 2021-05-26
EP3146564A1 (en) 2017-03-29
KR20170005005A (ko) 2017-01-11
CN106463502A (zh) 2017-02-22
US9318564B2 (en) 2016-04-19
WO2015179050A1 (en) 2015-11-26
CN106463502B (zh) 2019-12-20
JP2017516313A (ja) 2017-06-15
US20150333131A1 (en) 2015-11-19
JP6625562B2 (ja) 2019-12-25
ES2875037T3 (es) 2021-11-08

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