JP2016527658A5 - - Google Patents

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Publication number
JP2016527658A5
JP2016527658A5 JP2016510818A JP2016510818A JP2016527658A5 JP 2016527658 A5 JP2016527658 A5 JP 2016527658A5 JP 2016510818 A JP2016510818 A JP 2016510818A JP 2016510818 A JP2016510818 A JP 2016510818A JP 2016527658 A5 JP2016527658 A5 JP 2016527658A5
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JP
Japan
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parameters
controller
portions
inspection
electron
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JP2016510818A
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English (en)
Japanese (ja)
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JP2016527658A (ja
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Priority claimed from US14/260,053 external-priority patent/US9257260B2/en
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Publication of JP2016527658A publication Critical patent/JP2016527658A/ja
Publication of JP2016527658A5 publication Critical patent/JP2016527658A5/ja
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JP2016510818A 2013-04-27 2014-04-25 電子ビーム検査中に試料を適応的に走査する方法及びシステム Pending JP2016527658A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361816720P 2013-04-27 2013-04-27
US61/816,720 2013-04-27
US14/260,053 2014-04-23
US14/260,053 US9257260B2 (en) 2013-04-27 2014-04-23 Method and system for adaptively scanning a sample during electron beam inspection
PCT/US2014/035572 WO2014176570A2 (en) 2013-04-27 2014-04-25 Method and system for adaptively scanning a sample during electron beam inspection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018152676A Division JP6595058B2 (ja) 2013-04-27 2018-08-14 電子ビーム検査中に試料を適応的に走査する方法及びシステム

Publications (2)

Publication Number Publication Date
JP2016527658A JP2016527658A (ja) 2016-09-08
JP2016527658A5 true JP2016527658A5 (enExample) 2017-06-15

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JP2016510818A Pending JP2016527658A (ja) 2013-04-27 2014-04-25 電子ビーム検査中に試料を適応的に走査する方法及びシステム
JP2018152676A Active JP6595058B2 (ja) 2013-04-27 2018-08-14 電子ビーム検査中に試料を適応的に走査する方法及びシステム

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JP2018152676A Active JP6595058B2 (ja) 2013-04-27 2018-08-14 電子ビーム検査中に試料を適応的に走査する方法及びシステム

Country Status (6)

Country Link
US (2) US9257260B2 (enExample)
EP (1) EP3001865B1 (enExample)
JP (2) JP2016527658A (enExample)
KR (1) KR102094573B1 (enExample)
TW (1) TWI608553B (enExample)
WO (1) WO2014176570A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257260B2 (en) * 2013-04-27 2016-02-09 Kla-Tencor Corporation Method and system for adaptively scanning a sample during electron beam inspection
US9214317B2 (en) 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology
US9564291B1 (en) * 2014-01-27 2017-02-07 Mochii, Inc. Hybrid charged-particle beam and light beam microscopy
US9754761B2 (en) 2015-05-26 2017-09-05 Kla-Tencor Corporation High-speed hotspot or defect imaging with a charged particle beam system
US11302511B2 (en) 2016-02-04 2022-04-12 Kla Corporation Field curvature correction for multi-beam inspection systems
US10460903B2 (en) * 2016-04-04 2019-10-29 Kla-Tencor Corporation Method and system for charge control for imaging floating metal structures on non-conducting substrates
CN111164729B (zh) * 2017-09-29 2023-04-11 Asml荷兰有限公司 带电粒子束检查的样品检查选配方案的动态确定的方法
JP2021526716A (ja) * 2018-06-12 2021-10-07 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム検査装置を使用してサンプルをスキャンするためのシステム及び方法
US11508551B2 (en) 2018-12-14 2022-11-22 Kla Corporation Detection and correction of system responses in real-time
US12165838B2 (en) * 2018-12-14 2024-12-10 Kla Corporation Joint electron-optical columns for flood-charging and image-forming in voltage contrast wafer inspections
US11133152B2 (en) 2019-03-21 2021-09-28 Applied Materials, Inc. Methods and apparatus for performing profile metrology on semiconductor structures
JP7165633B2 (ja) * 2019-08-27 2022-11-04 株式会社日立ハイテク 荷電粒子ビーム制御装置
TWI791197B (zh) * 2020-03-12 2023-02-01 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子系統中之高產能缺陷檢測之系統和方法
US12437965B1 (en) * 2022-08-01 2025-10-07 Mochil, Inc. Charged-particle beam microscope with differential vacuum pressures

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676153A (en) * 1979-11-26 1981-06-23 Hitachi Ltd Image signal processor for scanning electron microscope
GB2215907B (en) * 1987-07-14 1992-04-15 Jeol Ltd Apparatus using a charged-particle beam
CA1317035C (en) * 1989-01-25 1993-04-27 Matthias Brunner Method for examining a specimen in a particle beam instrument
US5408098A (en) * 1993-09-10 1995-04-18 International Business Machines Corporation Method and apparatus for detecting low loss electrons in a scanning electron microscope
JP3409909B2 (ja) 1994-03-11 2003-05-26 株式会社東芝 ウェーハパターンの欠陥検出方法及び同装置
JP3201926B2 (ja) * 1995-04-10 2001-08-27 株式会社日立製作所 走査電子顕微鏡
GB2314926B (en) * 1996-07-01 1999-08-25 K E Developments Ltd Detector devices
US5869833A (en) * 1997-01-16 1999-02-09 Kla-Tencor Corporation Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
JPH11142121A (ja) * 1997-11-11 1999-05-28 Nikon Corp レチクルの歪み計測方法および歪み計測装置
US6426501B1 (en) * 1998-05-27 2002-07-30 Jeol Ltd. Defect-review SEM, reference sample for adjustment thereof, method for adjustment thereof, and method of inspecting contact holes
JP2000048756A (ja) * 1998-07-27 2000-02-18 Seiko Instruments Inc 荷電粒子ビーム光学系の調整を行う方法およびその装置
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
US6552490B1 (en) * 2000-05-18 2003-04-22 Communications And Power Industries Multiple stage depressed collector (MSDC) klystron based amplifier for ground based satellite and terrestrial communications
US6583420B1 (en) * 2000-06-07 2003-06-24 Robert S. Nelson Device and system for improved imaging in nuclear medicine and mammography
JP4434446B2 (ja) * 2000-07-21 2010-03-17 Ｏｋｉセミコンダクタ株式会社 走査型電子顕微鏡の校正方法
JP4610798B2 (ja) * 2001-06-19 2011-01-12 エスアイアイ・ナノテクノロジー株式会社 レーザ欠陥検出機能を備えた走査型電子顕微鏡とそのオートフォーカス方法
JP2003151483A (ja) * 2001-11-19 2003-05-23 Hitachi Ltd 荷電粒子線を用いた回路パターン用基板検査装置および基板検査方法
JP3914750B2 (ja) * 2001-11-20 2007-05-16 日本電子株式会社 収差補正装置を備えた荷電粒子線装置
EP1319982A1 (en) * 2001-12-12 2003-06-18 ASML Netherlands B.V. Lithographic apparatus , device manufacturing method, and computer program
US7078690B2 (en) * 2002-02-04 2006-07-18 Applied Materials, Israel, Ltd. Monitoring of contact hole production
US6822246B2 (en) 2002-03-27 2004-11-23 Kla-Tencor Technologies Corporation Ribbon electron beam for inspection system
DE10237141A1 (de) * 2002-08-13 2004-02-26 Leo Elektronenmikroskopie Gmbh Strahlführungssystem, Abbildungsverfahren und Elektronenmikroskopiesystem
DE10257423A1 (de) * 2002-12-09 2004-06-24 Europäisches Laboratorium für Molekularbiologie (EMBL) Mikroskop
US7291841B2 (en) * 2003-06-16 2007-11-06 Robert Sigurd Nelson Device and system for enhanced SPECT, PET, and Compton scatter imaging in nuclear medicine
US7198873B2 (en) * 2003-11-18 2007-04-03 Asml Netherlands B.V. Lithographic processing optimization based on hypersampled correlations
US7049616B2 (en) * 2004-05-17 2006-05-23 General Electric Company Methods, apparatus, and software for adjusting the focal spot of an electron beam
JP4164470B2 (ja) * 2004-05-18 2008-10-15 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
WO2006002150A1 (en) 2004-06-22 2006-01-05 Applied Materials Israel, Ltd. Wafer inspection system
WO2006126569A1 (ja) * 2005-05-25 2006-11-30 Nikon Corporation 露光方法及びリソグラフィシステム
US7358493B2 (en) * 2005-06-08 2008-04-15 Infineon Technologies Richmond, Lp Method and apparatus for automated beam optimization in a scanning electron microscope
US20070280526A1 (en) 2006-05-30 2007-12-06 Irfan Malik Determining Information about Defects or Binning Defects Detected on a Wafer after an Immersion Lithography Process is Performed on the Wafer
JP4917359B2 (ja) * 2006-06-09 2012-04-18 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及びそれを制御するためのプログラム
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
US7759642B2 (en) * 2008-04-30 2010-07-20 Applied Materials Israel, Ltd. Pattern invariant focusing of a charged particle beam
KR101647768B1 (ko) * 2008-06-04 2016-08-11 마퍼 리쏘그라피 아이피 비.브이. 타겟을 노출하는 방법 및 시스템
JP2010118564A (ja) * 2008-11-14 2010-05-27 Hitachi High-Technologies Corp パターンの検査装置、およびパターンの検査方法
JP5325802B2 (ja) * 2010-01-28 2013-10-23 株式会社日立ハイテクノロジーズ 観察方法および観察装置
WO2011102511A1 (ja) 2010-02-22 2011-08-25 株式会社日立ハイテクノロジーズ 回路パターン検査装置
JP2012068051A (ja) * 2010-09-21 2012-04-05 Toshiba Corp パターン欠陥検査装置およびパターン欠陥検査方法
JP2012084287A (ja) * 2010-10-08 2012-04-26 Hitachi High-Technologies Corp Ｓｅｍ式外観検査装置
US9281164B2 (en) * 2010-12-13 2016-03-08 Kla-Tencor Corporation Method and apparatus for inspection of scattered hot spot areas on a manufactured substrate
JP2011243587A (ja) * 2011-08-23 2011-12-01 Hitachi High-Technologies Corp 電子線検査装置、記憶媒体及び電子線検査方法
JP5927067B2 (ja) * 2012-07-06 2016-05-25 株式会社日立ハイテクノロジーズ 計測検査装置、及び計測検査方法
US8716662B1 (en) * 2012-07-16 2014-05-06 Kla-Tencor Corporation Methods and apparatus to review defects using scanning electron microscope with multiple electron beam configurations
US9257260B2 (en) * 2013-04-27 2016-02-09 Kla-Tencor Corporation Method and system for adaptively scanning a sample during electron beam inspection
JP6155137B2 (ja) * 2013-08-09 2017-06-28 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡を用いた処理装置及び処理方法

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