JP2016526284A5 - - Google Patents

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Publication number
JP2016526284A5
JP2016526284A5 JP2016512916A JP2016512916A JP2016526284A5 JP 2016526284 A5 JP2016526284 A5 JP 2016526284A5 JP 2016512916 A JP2016512916 A JP 2016512916A JP 2016512916 A JP2016512916 A JP 2016512916A JP 2016526284 A5 JP2016526284 A5 JP 2016526284A5
Authority
JP
Japan
Prior art keywords
glass
vias
cross
inductor structure
sectional shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016512916A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016526284A (ja
Filing date
Publication date
Priority claimed from US13/887,788 external-priority patent/US20140327510A1/en
Application filed filed Critical
Publication of JP2016526284A publication Critical patent/JP2016526284A/ja
Publication of JP2016526284A5 publication Critical patent/JP2016526284A5/ja
Pending legal-status Critical Current

Links

JP2016512916A 2013-05-06 2014-04-22 非対称ガラス貫通ビアを有する電子デバイス Pending JP2016526284A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/887,788 US20140327510A1 (en) 2013-05-06 2013-05-06 Electronic device having asymmetrical through glass vias
US13/887,788 2013-05-06
PCT/US2014/035041 WO2014182445A1 (en) 2013-05-06 2014-04-22 Electronic device having asymmetrical through glass vias

Publications (2)

Publication Number Publication Date
JP2016526284A JP2016526284A (ja) 2016-09-01
JP2016526284A5 true JP2016526284A5 (enExample) 2017-05-25

Family

ID=50841965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016512916A Pending JP2016526284A (ja) 2013-05-06 2014-04-22 非対称ガラス貫通ビアを有する電子デバイス

Country Status (6)

Country Link
US (1) US20140327510A1 (enExample)
EP (1) EP2994925A1 (enExample)
JP (1) JP2016526284A (enExample)
KR (1) KR20160005349A (enExample)
CN (1) CN105190799A (enExample)
WO (1) WO2014182445A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
US11024454B2 (en) * 2015-10-16 2021-06-01 Qualcomm Incorporated High performance inductors
JP6838328B2 (ja) * 2016-09-15 2021-03-03 大日本印刷株式会社 インダクタおよびインダクタの製造方法
US20180286556A1 (en) * 2017-04-01 2018-10-04 Intel Corporation Integrated circuit implemented inductors and methods of manufacture
JP6781145B2 (ja) * 2017-12-28 2020-11-04 日本発條株式会社 携帯型無線通信装置、および携帯型無線通信装置を用いた情報識別装置
TWI723343B (zh) * 2019-02-19 2021-04-01 頎邦科技股份有限公司 具立體電感之半導體結構及其製造方法
WO2024118422A1 (en) * 2022-11-30 2024-06-06 Corning Incorporated Through glass vias having adjustable arc shape and orientation and methods for forming the same via partitioned vortex laser beam

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3571247B2 (ja) * 1999-03-31 2004-09-29 太陽誘電株式会社 積層電子部品
US20030151485A1 (en) * 2002-02-08 2003-08-14 Charles Lewis Surface mounted inductance element
US6990729B2 (en) * 2003-09-05 2006-01-31 Harris Corporation Method for forming an inductor
JP4764668B2 (ja) * 2005-07-05 2011-09-07 セイコーエプソン株式会社 電子基板の製造方法および電子基板
JP2007150022A (ja) * 2005-11-29 2007-06-14 Seiko Epson Corp 電子基板、その製造方法および電子機器
JP2009038297A (ja) * 2007-08-03 2009-02-19 Asahi Kasei Electronics Co Ltd 半導体装置
JP2009246159A (ja) * 2008-03-31 2009-10-22 Fuji Electric Device Technology Co Ltd 多出力磁気誘導素子およびそれを備えた多出力超小型電力変換装置
US20110217657A1 (en) * 2010-02-10 2011-09-08 Life Bioscience, Inc. Methods to fabricate a photoactive substrate suitable for microfabrication
US20110229687A1 (en) * 2010-03-19 2011-09-22 Qualcomm Incorporated Through Glass Via Manufacturing Process
US8384507B2 (en) * 2010-06-01 2013-02-26 Qualcomm Incorporated Through via inductor or transformer in a high-resistance substrate with programmability
US8591262B2 (en) * 2010-09-03 2013-11-26 Pulse Electronics, Inc. Substrate inductive devices and methods
EP2650915B1 (en) * 2010-12-10 2017-07-26 Panasonic Intellectual Property Management Co., Ltd. Conducting path and semiconductor device
US20120235969A1 (en) * 2011-03-15 2012-09-20 Qualcomm Mems Technologies, Inc. Thin film through-glass via and methods for forming same
US20130050226A1 (en) * 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Die-cut through-glass via and methods for forming same
US8716871B2 (en) * 2012-02-15 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Big via structure

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