KR20160005349A - 비대칭적 관통 유리 비아들을 가진 전자 디바이스 - Google Patents

비대칭적 관통 유리 비아들을 가진 전자 디바이스 Download PDF

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Publication number
KR20160005349A
KR20160005349A KR1020157034123A KR20157034123A KR20160005349A KR 20160005349 A KR20160005349 A KR 20160005349A KR 1020157034123 A KR1020157034123 A KR 1020157034123A KR 20157034123 A KR20157034123 A KR 20157034123A KR 20160005349 A KR20160005349 A KR 20160005349A
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KR
South Korea
Prior art keywords
tgv
tgvs
electronic device
circular cross
section
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Withdrawn
Application number
KR1020157034123A
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English (en)
Korean (ko)
Inventor
대익 디. 김
데이비드 에프. 버디
청지에 주오
마리오 프란시스코 벨레즈
창한 윤
로버트 피. 미쿨라
종해 김
제-흐시웅 란
Original Assignee
퀄컴 인코포레이티드
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Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20160005349A publication Critical patent/KR20160005349A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H01F27/363—Electric or magnetic shields or screens made of electrically conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F27/362—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007—Casings
    • H05K9/002—Casings with localised screening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H01F2017/002—Details of via holes for interconnecting the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020157034123A 2013-05-06 2014-04-22 비대칭적 관통 유리 비아들을 가진 전자 디바이스 Withdrawn KR20160005349A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/887,788 US20140327510A1 (en) 2013-05-06 2013-05-06 Electronic device having asymmetrical through glass vias
US13/887,788 2013-05-06
PCT/US2014/035041 WO2014182445A1 (en) 2013-05-06 2014-04-22 Electronic device having asymmetrical through glass vias

Publications (1)

Publication Number Publication Date
KR20160005349A true KR20160005349A (ko) 2016-01-14

Family

ID=50841965

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157034123A Withdrawn KR20160005349A (ko) 2013-05-06 2014-04-22 비대칭적 관통 유리 비아들을 가진 전자 디바이스

Country Status (6)

Country Link
US (1) US20140327510A1 (enExample)
EP (1) EP2994925A1 (enExample)
JP (1) JP2016526284A (enExample)
KR (1) KR20160005349A (enExample)
CN (1) CN105190799A (enExample)
WO (1) WO2014182445A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
US11024454B2 (en) * 2015-10-16 2021-06-01 Qualcomm Incorporated High performance inductors
JP6838328B2 (ja) * 2016-09-15 2021-03-03 大日本印刷株式会社 インダクタおよびインダクタの製造方法
US20180286556A1 (en) * 2017-04-01 2018-10-04 Intel Corporation Integrated circuit implemented inductors and methods of manufacture
JP6781145B2 (ja) * 2017-12-28 2020-11-04 日本発條株式会社 携帯型無線通信装置、および携帯型無線通信装置を用いた情報識別装置
TWI723343B (zh) * 2019-02-19 2021-04-01 頎邦科技股份有限公司 具立體電感之半導體結構及其製造方法
WO2024118422A1 (en) * 2022-11-30 2024-06-06 Corning Incorporated Through glass vias having adjustable arc shape and orientation and methods for forming the same via partitioned vortex laser beam

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3571247B2 (ja) * 1999-03-31 2004-09-29 太陽誘電株式会社 積層電子部品
US20030151485A1 (en) * 2002-02-08 2003-08-14 Charles Lewis Surface mounted inductance element
US6990729B2 (en) * 2003-09-05 2006-01-31 Harris Corporation Method for forming an inductor
JP4764668B2 (ja) * 2005-07-05 2011-09-07 セイコーエプソン株式会社 電子基板の製造方法および電子基板
JP2007150022A (ja) * 2005-11-29 2007-06-14 Seiko Epson Corp 電子基板、その製造方法および電子機器
JP2009038297A (ja) * 2007-08-03 2009-02-19 Asahi Kasei Electronics Co Ltd 半導体装置
JP2009246159A (ja) * 2008-03-31 2009-10-22 Fuji Electric Device Technology Co Ltd 多出力磁気誘導素子およびそれを備えた多出力超小型電力変換装置
US20110217657A1 (en) * 2010-02-10 2011-09-08 Life Bioscience, Inc. Methods to fabricate a photoactive substrate suitable for microfabrication
US20110229687A1 (en) * 2010-03-19 2011-09-22 Qualcomm Incorporated Through Glass Via Manufacturing Process
US8384507B2 (en) * 2010-06-01 2013-02-26 Qualcomm Incorporated Through via inductor or transformer in a high-resistance substrate with programmability
US8591262B2 (en) * 2010-09-03 2013-11-26 Pulse Electronics, Inc. Substrate inductive devices and methods
EP2650915B1 (en) * 2010-12-10 2017-07-26 Panasonic Intellectual Property Management Co., Ltd. Conducting path and semiconductor device
US20120235969A1 (en) * 2011-03-15 2012-09-20 Qualcomm Mems Technologies, Inc. Thin film through-glass via and methods for forming same
US20130050226A1 (en) * 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Die-cut through-glass via and methods for forming same
US8716871B2 (en) * 2012-02-15 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Big via structure

Also Published As

Publication number Publication date
JP2016526284A (ja) 2016-09-01
US20140327510A1 (en) 2014-11-06
CN105190799A (zh) 2015-12-23
EP2994925A1 (en) 2016-03-16
WO2014182445A1 (en) 2014-11-13

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20151130

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid