JP2016519690A5 - - Google Patents

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Publication number
JP2016519690A5
JP2016519690A5 JP2016500720A JP2016500720A JP2016519690A5 JP 2016519690 A5 JP2016519690 A5 JP 2016519690A5 JP 2016500720 A JP2016500720 A JP 2016500720A JP 2016500720 A JP2016500720 A JP 2016500720A JP 2016519690 A5 JP2016519690 A5 JP 2016519690A5
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JP
Japan
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polymer
ferroelectric
ferroelectric material
material according
blend
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JP2016500720A
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English (en)
Japanese (ja)
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JP6421169B2 (ja
JP2016519690A (ja
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Priority claimed from PCT/US2014/021091 external-priority patent/WO2014158956A1/en
Publication of JP2016519690A publication Critical patent/JP2016519690A/ja
Publication of JP2016519690A5 publication Critical patent/JP2016519690A5/ja
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JP2016500720A 2013-03-14 2014-03-06 疲労特性および破壊特性が改善された強誘電体キャパシタ Active JP6421169B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361784011P 2013-03-14 2013-03-14
US61/784,011 2013-03-14
US201361866882P 2013-08-16 2013-08-16
US61/866,882 2013-08-16
US201361876033P 2013-09-10 2013-09-10
US61/876,033 2013-09-10
PCT/US2014/021091 WO2014158956A1 (en) 2013-03-14 2014-03-06 Ferroelectric capacitor with improved fatigue and breakdown properties

Publications (3)

Publication Number Publication Date
JP2016519690A JP2016519690A (ja) 2016-07-07
JP2016519690A5 true JP2016519690A5 (enExample) 2017-01-05
JP6421169B2 JP6421169B2 (ja) 2018-11-07

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Application Number Title Priority Date Filing Date
JP2016500720A Active JP6421169B2 (ja) 2013-03-14 2014-03-06 疲労特性および破壊特性が改善された強誘電体キャパシタ

Country Status (7)

Country Link
US (1) US10096352B2 (enExample)
EP (1) EP2973775B1 (enExample)
JP (1) JP6421169B2 (enExample)
KR (1) KR102043488B1 (enExample)
CN (1) CN105103322B (enExample)
TW (1) TW201505221A (enExample)
WO (1) WO2014158956A1 (enExample)

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US9368182B2 (en) * 2013-12-09 2016-06-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Memory cell
KR101632025B1 (ko) * 2015-01-09 2016-06-20 광주과학기술원 유기 박막 제조 방법
CN108206239B (zh) * 2016-12-16 2019-10-01 同济大学 基于金-铁电单晶体系的负微分电阻效应器件及其制备
KR102430668B1 (ko) * 2018-03-30 2022-08-09 고쿠리츠다이가쿠호진 히로시마다이가쿠 성형체
CN108469586B (zh) * 2018-06-04 2023-08-08 沈阳工业大学 一种快速接地开关开断特性的检验与判断装置及方法
CN109400929B (zh) * 2018-10-30 2021-07-13 郭庆平 一种P(VDF-TrFE)铁电薄膜材料的制备方法
JP7211104B2 (ja) * 2019-01-24 2023-01-24 日立金属株式会社 線状部材及びその製造方法
US20210408367A1 (en) * 2019-02-27 2021-12-30 National University Corporation Yamagata University Method for producing ferroelectric polymer element, ferroelectric polymer element and piezoelectric sensor
CN109972136B (zh) * 2019-03-26 2020-09-04 浙江大学 一种取向生长P(VDF-TrFE)薄膜的制备方法
CN110164698A (zh) * 2019-04-29 2019-08-23 杭州电子科技大学 一种PET-ITO/TiO2/P(VDF/TrFE)透明柔性复合光阳极
JP7200861B2 (ja) * 2019-07-12 2023-01-10 味の素株式会社 樹脂組成物
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
US11049541B2 (en) * 2019-10-24 2021-06-29 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
KR102834552B1 (ko) * 2021-01-05 2025-07-14 삼성전자주식회사 캐패시터 및 캐패시터를 포함하는 반도체 소자를 제조하기 위한 방법들
CN116249338B (zh) * 2023-03-15 2024-03-22 潍坊新声悦尔电子科技有限公司 Ptfe膜覆膜背极板驻极电荷激活老化工艺
CN117169669B (zh) * 2023-11-02 2024-03-12 国网江西省电力有限公司供电服务管理中心 击穿电容监测方法、装置、电子设备及可读存储介质

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