CN105103322B - 具有改善的疲劳和击穿性能的铁电电容器 - Google Patents

具有改善的疲劳和击穿性能的铁电电容器 Download PDF

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Publication number
CN105103322B
CN105103322B CN201480015331.0A CN201480015331A CN105103322B CN 105103322 B CN105103322 B CN 105103322B CN 201480015331 A CN201480015331 A CN 201480015331A CN 105103322 B CN105103322 B CN 105103322B
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Prior art keywords
ferroelectric
polymer
capacitor
ferroelectric material
ferroelectric capacitor
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Chinese (zh)
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CN105103322A (zh
Inventor
穆赫德·A·卡恩
胡萨姆·N·阿尔沙雷夫
伊哈卜·N·乌达
穆罕默德·N·阿尔马道恩
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Saudi Basic Industries Corp
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Saudi Basic Industries Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
CN201480015331.0A 2013-03-14 2014-03-06 具有改善的疲劳和击穿性能的铁电电容器 Active CN105103322B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361784011P 2013-03-14 2013-03-14
US61/784,011 2013-03-14
US201361866882P 2013-08-16 2013-08-16
US61/866,882 2013-08-16
US201361876033P 2013-09-10 2013-09-10
US61/876,033 2013-09-10
PCT/US2014/021091 WO2014158956A1 (en) 2013-03-14 2014-03-06 Ferroelectric capacitor with improved fatigue and breakdown properties

Publications (2)

Publication Number Publication Date
CN105103322A CN105103322A (zh) 2015-11-25
CN105103322B true CN105103322B (zh) 2019-03-08

Family

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Family Applications (1)

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CN201480015331.0A Active CN105103322B (zh) 2013-03-14 2014-03-06 具有改善的疲劳和击穿性能的铁电电容器

Country Status (7)

Country Link
US (1) US10096352B2 (enExample)
EP (1) EP2973775B1 (enExample)
JP (1) JP6421169B2 (enExample)
KR (1) KR102043488B1 (enExample)
CN (1) CN105103322B (enExample)
TW (1) TW201505221A (enExample)
WO (1) WO2014158956A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9368182B2 (en) * 2013-12-09 2016-06-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Memory cell
KR101632025B1 (ko) * 2015-01-09 2016-06-20 광주과학기술원 유기 박막 제조 방법
CN108206239B (zh) * 2016-12-16 2019-10-01 同济大学 基于金-铁电单晶体系的负微分电阻效应器件及其制备
KR102430668B1 (ko) * 2018-03-30 2022-08-09 고쿠리츠다이가쿠호진 히로시마다이가쿠 성형체
CN108469586B (zh) * 2018-06-04 2023-08-08 沈阳工业大学 一种快速接地开关开断特性的检验与判断装置及方法
CN109400929B (zh) * 2018-10-30 2021-07-13 郭庆平 一种P（VDF-TrFE）铁电薄膜材料的制备方法
JP7211104B2 (ja) * 2019-01-24 2023-01-24 日立金属株式会社 線状部材及びその製造方法
US20210408367A1 (en) * 2019-02-27 2021-12-30 National University Corporation Yamagata University Method for producing ferroelectric polymer element, ferroelectric polymer element and piezoelectric sensor
CN109972136B (zh) * 2019-03-26 2020-09-04 浙江大学 一种取向生长P(VDF-TrFE)薄膜的制备方法
CN110164698A (zh) * 2019-04-29 2019-08-23 杭州电子科技大学 一种PET-ITO/TiO2/P（VDF/TrFE）透明柔性复合光阳极
JP7200861B2 (ja) * 2019-07-12 2023-01-10 味の素株式会社 樹脂組成物
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
US11049541B2 (en) * 2019-10-24 2021-06-29 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
KR102834552B1 (ko) * 2021-01-05 2025-07-14 삼성전자주식회사 캐패시터 및 캐패시터를 포함하는 반도체 소자를 제조하기 위한 방법들
CN116249338B (zh) * 2023-03-15 2024-03-22 潍坊新声悦尔电子科技有限公司 Ptfe膜覆膜背极板驻极电荷激活老化工艺
CN117169669B (zh) * 2023-11-02 2024-03-12 国网江西省电力有限公司供电服务管理中心 击穿电容监测方法、装置、电子设备及可读存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060022310A1 (en) * 2004-07-28 2006-02-02 Endicott Interconnect Technologies, Inc. Electrical assembly with internal memory circuitized substrate having electronic components positioned thereon, method of making same, and information handling system utilizing same
US20080128682A1 (en) * 2005-05-11 2008-06-05 University Of Seoul Foundation Of Industry- Academic Cooperation Ferrodielectric Memory Device And Method For Manufacturing The Same
US20080293864A1 (en) * 2005-11-23 2008-11-27 General Electric Company Nonlinear polymer composites and methods of making the same
US20100067172A1 (en) * 2008-03-13 2010-03-18 Strategic Polymer Sciences, Inc. High electric energy density polymeric compositions, methods of the manufacture therefor, and articles comprising the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8701624A (nl) * 1987-07-10 1989-02-01 Gen Electric Polymeermengsel dat een polyfenyleenether, een fluor bevattend olefinisch homopolymeer of copolymeer en een vinylaromatischalkyl(meth)acrylaat copolymeer bevat.
US5115018A (en) * 1987-08-24 1992-05-19 Allied-Signal Inc. High-impact, styrenic polymer/thermoplastic polymer grafted blends
JPH01110550A (ja) * 1987-10-23 1989-04-27 Toagosei Chem Ind Co Ltd 樹脂組成物
US7034332B2 (en) 2004-01-27 2006-04-25 Hewlett-Packard Development Company, L.P. Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US20080248596A1 (en) 2007-04-04 2008-10-09 Endicott Interconnect Technologies, Inc. Method of making a circuitized substrate having at least one capacitor therein
JP2008147632A (ja) * 2006-11-13 2008-06-26 Seiko Epson Corp 有機強誘電体膜の形成方法、記憶素子の製造方法、記憶装置、および電子機器
WO2009005555A2 (en) * 2007-04-11 2009-01-08 The Penn State Research Foundation Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
JP5135937B2 (ja) * 2007-07-31 2013-02-06 ダイキン工業株式会社 高誘電性フィルム
KR100984182B1 (ko) 2008-04-14 2010-09-28 삼성전자주식회사 비휘발성 메모리 장치 및 이의 제조 방법
US8611068B2 (en) 2008-10-16 2013-12-17 Case Western Reserve University Multilayer polymer dialectric film having a charge-delocalizing interface
US20110228442A1 (en) 2010-03-16 2011-09-22 Strategic Polymer Sciences, Inc. Capacitor having high temperature stability, high dielectric constant, low dielectric loss, and low leakage current

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060022310A1 (en) * 2004-07-28 2006-02-02 Endicott Interconnect Technologies, Inc. Electrical assembly with internal memory circuitized substrate having electronic components positioned thereon, method of making same, and information handling system utilizing same
US20080128682A1 (en) * 2005-05-11 2008-06-05 University Of Seoul Foundation Of Industry- Academic Cooperation Ferrodielectric Memory Device And Method For Manufacturing The Same
US20080293864A1 (en) * 2005-11-23 2008-11-27 General Electric Company Nonlinear polymer composites and methods of making the same
US20100067172A1 (en) * 2008-03-13 2010-03-18 Strategic Polymer Sciences, Inc. High electric energy density polymeric compositions, methods of the manufacture therefor, and articles comprising the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non-Volatile Polymer Memory";By Seok Ju Kang et al.;《ADVANCED FUNCTINAL MATERIALS》;20090702;第19卷(第17期);第2812-2818页 *

Also Published As

Publication number Publication date
EP2973775A1 (en) 2016-01-20
WO2014158956A1 (en) 2014-10-02
TW201505221A (zh) 2015-02-01
US20140268483A1 (en) 2014-09-18
KR20150129801A (ko) 2015-11-20
JP6421169B2 (ja) 2018-11-07
KR102043488B1 (ko) 2019-11-11
JP2016519690A (ja) 2016-07-07
CN105103322A (zh) 2015-11-25
EP2973775B1 (en) 2017-06-07
US10096352B2 (en) 2018-10-09

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