TW201505221A - 具有改良疲乏及崩潰性質之鐵電電容器 - Google Patents
具有改良疲乏及崩潰性質之鐵電電容器 Download PDFInfo
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- TW201505221A TW201505221A TW103109293A TW103109293A TW201505221A TW 201505221 A TW201505221 A TW 201505221A TW 103109293 A TW103109293 A TW 103109293A TW 103109293 A TW103109293 A TW 103109293A TW 201505221 A TW201505221 A TW 201505221A
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Classifications
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Formation Of Insulating Films (AREA)
- Organic Insulating Materials (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (3)
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| US201361784011P | 2013-03-14 | 2013-03-14 | |
| US201361866882P | 2013-08-16 | 2013-08-16 | |
| US201361876033P | 2013-09-10 | 2013-09-10 |
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| TW201505221A true TW201505221A (zh) | 2015-02-01 |
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| TW103109293A TW201505221A (zh) | 2013-03-14 | 2014-03-14 | 具有改良疲乏及崩潰性質之鐵電電容器 |
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| US (1) | US10096352B2 (enExample) |
| EP (1) | EP2973775B1 (enExample) |
| JP (1) | JP6421169B2 (enExample) |
| KR (1) | KR102043488B1 (enExample) |
| CN (1) | CN105103322B (enExample) |
| TW (1) | TW201505221A (enExample) |
| WO (1) | WO2014158956A1 (enExample) |
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| US9368182B2 (en) * | 2013-12-09 | 2016-06-14 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Memory cell |
| KR101632025B1 (ko) * | 2015-01-09 | 2016-06-20 | 광주과학기술원 | 유기 박막 제조 방법 |
| CN108206239B (zh) * | 2016-12-16 | 2019-10-01 | 同济大学 | 基于金-铁电单晶体系的负微分电阻效应器件及其制备 |
| KR102430668B1 (ko) * | 2018-03-30 | 2022-08-09 | 고쿠리츠다이가쿠호진 히로시마다이가쿠 | 성형체 |
| CN108469586B (zh) * | 2018-06-04 | 2023-08-08 | 沈阳工业大学 | 一种快速接地开关开断特性的检验与判断装置及方法 |
| CN109400929B (zh) * | 2018-10-30 | 2021-07-13 | 郭庆平 | 一种P（VDF-TrFE）铁电薄膜材料的制备方法 |
| JP7211104B2 (ja) * | 2019-01-24 | 2023-01-24 | 日立金属株式会社 | 線状部材及びその製造方法 |
| US20210408367A1 (en) * | 2019-02-27 | 2021-12-30 | National University Corporation Yamagata University | Method for producing ferroelectric polymer element, ferroelectric polymer element and piezoelectric sensor |
| CN109972136B (zh) * | 2019-03-26 | 2020-09-04 | 浙江大学 | 一种取向生长P(VDF-TrFE)薄膜的制备方法 |
| CN110164698A (zh) * | 2019-04-29 | 2019-08-23 | 杭州电子科技大学 | 一种PET-ITO/TiO2/P（VDF/TrFE）透明柔性复合光阳极 |
| JP7200861B2 (ja) * | 2019-07-12 | 2023-01-10 | 味の素株式会社 | 樹脂組成物 |
| CN110444397B (zh) * | 2019-07-26 | 2022-06-21 | 上海工程技术大学 | 一种线电极结构的有机铁电薄膜电容器及其制备方法 |
| US11049541B2 (en) * | 2019-10-24 | 2021-06-29 | Ferroelectric Memory Gmbh | Memory cell arrangement and methods thereof |
| KR102834552B1 (ko) * | 2021-01-05 | 2025-07-14 | 삼성전자주식회사 | 캐패시터 및 캐패시터를 포함하는 반도체 소자를 제조하기 위한 방법들 |
| CN116249338B (zh) * | 2023-03-15 | 2024-03-22 | 潍坊新声悦尔电子科技有限公司 | Ptfe膜覆膜背极板驻极电荷激活老化工艺 |
| CN117169669B (zh) * | 2023-11-02 | 2024-03-12 | 国网江西省电力有限公司供电服务管理中心 | 击穿电容监测方法、装置、电子设备及可读存储介质 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8701624A (nl) * | 1987-07-10 | 1989-02-01 | Gen Electric | Polymeermengsel dat een polyfenyleenether, een fluor bevattend olefinisch homopolymeer of copolymeer en een vinylaromatischalkyl(meth)acrylaat copolymeer bevat. |
| US5115018A (en) * | 1987-08-24 | 1992-05-19 | Allied-Signal Inc. | High-impact, styrenic polymer/thermoplastic polymer grafted blends |
| JPH01110550A (ja) * | 1987-10-23 | 1989-04-27 | Toagosei Chem Ind Co Ltd | 樹脂組成物 |
| US7034332B2 (en) | 2004-01-27 | 2006-04-25 | Hewlett-Packard Development Company, L.P. | Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making |
| US7139198B2 (en) * | 2004-01-27 | 2006-11-21 | Sandisk Corporation | Efficient verification for coarse/fine programming of non-volatile memory |
| US7045897B2 (en) * | 2004-07-28 | 2006-05-16 | Endicott Interconnect Technologies, Inc. | Electrical assembly with internal memory circuitized substrate having electronic components positioned thereon, method of making same, and information handling system utilizing same |
| US20080248596A1 (en) | 2007-04-04 | 2008-10-09 | Endicott Interconnect Technologies, Inc. | Method of making a circuitized substrate having at least one capacitor therein |
| US20080128682A1 (en) * | 2005-05-11 | 2008-06-05 | University Of Seoul Foundation Of Industry- Academic Cooperation | Ferrodielectric Memory Device And Method For Manufacturing The Same |
| US7989530B2 (en) * | 2005-11-23 | 2011-08-02 | General Electric Company | Nonlinear polymer composites and methods of making the same |
| JP2008147632A (ja) * | 2006-11-13 | 2008-06-26 | Seiko Epson Corp | 有機強誘電体膜の形成方法、記憶素子の製造方法、記憶装置、および電子機器 |
| WO2009005555A2 (en) * | 2007-04-11 | 2009-01-08 | The Penn State Research Foundation | Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same |
| JP5135937B2 (ja) * | 2007-07-31 | 2013-02-06 | ダイキン工業株式会社 | 高誘電性フィルム |
| WO2009151694A2 (en) * | 2008-03-13 | 2009-12-17 | Strategic Polymer Sciences, Inc. | High electrric energy density polymeric compositions, methods of the manufacture therefor, and articles comprising the same |
| KR100984182B1 (ko) | 2008-04-14 | 2010-09-28 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 이의 제조 방법 |
| US8611068B2 (en) | 2008-10-16 | 2013-12-17 | Case Western Reserve University | Multilayer polymer dialectric film having a charge-delocalizing interface |
| US20110228442A1 (en) | 2010-03-16 | 2011-09-22 | Strategic Polymer Sciences, Inc. | Capacitor having high temperature stability, high dielectric constant, low dielectric loss, and low leakage current |
-
2014
- 2014-03-06 JP JP2016500720A patent/JP6421169B2/ja active Active
- 2014-03-06 WO PCT/US2014/021091 patent/WO2014158956A1/en not_active Ceased
- 2014-03-06 CN CN201480015331.0A patent/CN105103322B/zh active Active
- 2014-03-06 KR KR1020157028270A patent/KR102043488B1/ko active Active
- 2014-03-06 EP EP14714858.9A patent/EP2973775B1/en active Active
- 2014-03-06 US US14/199,227 patent/US10096352B2/en active Active
- 2014-03-14 TW TW103109293A patent/TW201505221A/zh unknown
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| CN105103322B (zh) | 2019-03-08 |
| EP2973775A1 (en) | 2016-01-20 |
| WO2014158956A1 (en) | 2014-10-02 |
| US20140268483A1 (en) | 2014-09-18 |
| KR20150129801A (ko) | 2015-11-20 |
| JP6421169B2 (ja) | 2018-11-07 |
| KR102043488B1 (ko) | 2019-11-11 |
| JP2016519690A (ja) | 2016-07-07 |
| CN105103322A (zh) | 2015-11-25 |
| EP2973775B1 (en) | 2017-06-07 |
| US10096352B2 (en) | 2018-10-09 |
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