JP6421169B2 - 疲労特性および破壊特性が改善された強誘電体キャパシタ - Google Patents

疲労特性および破壊特性が改善された強誘電体キャパシタ Download PDF

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JP6421169B2
JP6421169B2 JP2016500720A JP2016500720A JP6421169B2 JP 6421169 B2 JP6421169 B2 JP 6421169B2 JP 2016500720 A JP2016500720 A JP 2016500720A JP 2016500720 A JP2016500720 A JP 2016500720A JP 6421169 B2 JP6421169 B2 JP 6421169B2
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polymer
ferroelectric
blend
ferroelectric material
vdf
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JP2016519690A5 (enExample
JP2016519690A (ja
Inventor
カーン，モド・エイ
アルシャリーフ，フサム・エヌ
オデー，イハブ・エヌ
アルマドーン，マーモッド・エヌ
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サウジ・ベーシック・インダストリーズ・コーポレーション
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
JP2016500720A 2013-03-14 2014-03-06 疲労特性および破壊特性が改善された強誘電体キャパシタ Active JP6421169B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361784011P 2013-03-14 2013-03-14
US61/784,011 2013-03-14
US201361866882P 2013-08-16 2013-08-16
US61/866,882 2013-08-16
US201361876033P 2013-09-10 2013-09-10
US61/876,033 2013-09-10
PCT/US2014/021091 WO2014158956A1 (en) 2013-03-14 2014-03-06 Ferroelectric capacitor with improved fatigue and breakdown properties

Publications (3)

Publication Number Publication Date
JP2016519690A JP2016519690A (ja) 2016-07-07
JP2016519690A5 JP2016519690A5 (enExample) 2017-01-05
JP6421169B2 true JP6421169B2 (ja) 2018-11-07

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JP2016500720A Active JP6421169B2 (ja) 2013-03-14 2014-03-06 疲労特性および破壊特性が改善された強誘電体キャパシタ

Country Status (7)

Country Link
US (1) US10096352B2 (enExample)
EP (1) EP2973775B1 (enExample)
JP (1) JP6421169B2 (enExample)
KR (1) KR102043488B1 (enExample)
CN (1) CN105103322B (enExample)
TW (1) TW201505221A (enExample)
WO (1) WO2014158956A1 (enExample)

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US9368182B2 (en) * 2013-12-09 2016-06-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Memory cell
KR101632025B1 (ko) * 2015-01-09 2016-06-20 광주과학기술원 유기 박막 제조 방법
CN108206239B (zh) * 2016-12-16 2019-10-01 同济大学 基于金-铁电单晶体系的负微分电阻效应器件及其制备
KR102430668B1 (ko) * 2018-03-30 2022-08-09 고쿠리츠다이가쿠호진 히로시마다이가쿠 성형체
CN108469586B (zh) * 2018-06-04 2023-08-08 沈阳工业大学 一种快速接地开关开断特性的检验与判断装置及方法
CN109400929B (zh) * 2018-10-30 2021-07-13 郭庆平 一种P（VDF-TrFE）铁电薄膜材料的制备方法
JP7211104B2 (ja) * 2019-01-24 2023-01-24 日立金属株式会社 線状部材及びその製造方法
US20210408367A1 (en) * 2019-02-27 2021-12-30 National University Corporation Yamagata University Method for producing ferroelectric polymer element, ferroelectric polymer element and piezoelectric sensor
CN109972136B (zh) * 2019-03-26 2020-09-04 浙江大学 一种取向生长P(VDF-TrFE)薄膜的制备方法
CN110164698A (zh) * 2019-04-29 2019-08-23 杭州电子科技大学 一种PET-ITO/TiO2/P（VDF/TrFE）透明柔性复合光阳极
JP7200861B2 (ja) * 2019-07-12 2023-01-10 味の素株式会社 樹脂組成物
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
US11049541B2 (en) * 2019-10-24 2021-06-29 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
KR102834552B1 (ko) * 2021-01-05 2025-07-14 삼성전자주식회사 캐패시터 및 캐패시터를 포함하는 반도체 소자를 제조하기 위한 방법들
CN116249338B (zh) * 2023-03-15 2024-03-22 潍坊新声悦尔电子科技有限公司 Ptfe膜覆膜背极板驻极电荷激活老化工艺
CN117169669B (zh) * 2023-11-02 2024-03-12 国网江西省电力有限公司供电服务管理中心 击穿电容监测方法、装置、电子设备及可读存储介质

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NL8701624A (nl) * 1987-07-10 1989-02-01 Gen Electric Polymeermengsel dat een polyfenyleenether, een fluor bevattend olefinisch homopolymeer of copolymeer en een vinylaromatischalkyl(meth)acrylaat copolymeer bevat.
US5115018A (en) * 1987-08-24 1992-05-19 Allied-Signal Inc. High-impact, styrenic polymer/thermoplastic polymer grafted blends
JPH01110550A (ja) * 1987-10-23 1989-04-27 Toagosei Chem Ind Co Ltd 樹脂組成物
US7034332B2 (en) 2004-01-27 2006-04-25 Hewlett-Packard Development Company, L.P. Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US7045897B2 (en) * 2004-07-28 2006-05-16 Endicott Interconnect Technologies, Inc. Electrical assembly with internal memory circuitized substrate having electronic components positioned thereon, method of making same, and information handling system utilizing same
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US20080128682A1 (en) * 2005-05-11 2008-06-05 University Of Seoul Foundation Of Industry- Academic Cooperation Ferrodielectric Memory Device And Method For Manufacturing The Same
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JP2008147632A (ja) * 2006-11-13 2008-06-26 Seiko Epson Corp 有機強誘電体膜の形成方法、記憶素子の製造方法、記憶装置、および電子機器
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Also Published As

Publication number Publication date
CN105103322B (zh) 2019-03-08
EP2973775A1 (en) 2016-01-20
WO2014158956A1 (en) 2014-10-02
TW201505221A (zh) 2015-02-01
US20140268483A1 (en) 2014-09-18
KR20150129801A (ko) 2015-11-20
KR102043488B1 (ko) 2019-11-11
JP2016519690A (ja) 2016-07-07
CN105103322A (zh) 2015-11-25
EP2973775B1 (en) 2017-06-07
US10096352B2 (en) 2018-10-09

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