JP2016516304A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016516304A5 JP2016516304A5 JP2016502429A JP2016502429A JP2016516304A5 JP 2016516304 A5 JP2016516304 A5 JP 2016516304A5 JP 2016502429 A JP2016502429 A JP 2016502429A JP 2016502429 A JP2016502429 A JP 2016502429A JP 2016516304 A5 JP2016516304 A5 JP 2016516304A5
- Authority
- JP
- Japan
- Prior art keywords
- atmosphere
- silicon layer
- annealed
- handle wafer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 12
- 229910052710 silicon Inorganic materials 0.000 claims 12
- 239000010703 silicon Substances 0.000 claims 12
- 239000012298 atmosphere Substances 0.000 claims 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 4
- 239000012300 argon atmosphere Substances 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 238000003776 cleavage reaction Methods 0.000 claims 4
- 239000012212 insulator Substances 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 230000007017 scission Effects 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 239000001307 helium Substances 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- 230000007547 defect Effects 0.000 claims 2
- 230000003746 surface roughness Effects 0.000 claims 2
- 238000004439 roughness measurement Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361783928P | 2013-03-14 | 2013-03-14 | |
| US61/783,928 | 2013-03-14 | ||
| PCT/US2014/027418 WO2014152510A1 (en) | 2013-03-14 | 2014-03-14 | Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016516304A JP2016516304A (ja) | 2016-06-02 |
| JP2016516304A5 true JP2016516304A5 (https=) | 2017-04-20 |
| JP6373354B2 JP6373354B2 (ja) | 2018-08-15 |
Family
ID=50440875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016502429A Active JP6373354B2 (ja) | 2013-03-14 | 2014-03-14 | ライトポイント欠陥と表面粗さを低減するための半導体オンインシュレータウエハの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9202711B2 (https=) |
| JP (1) | JP6373354B2 (https=) |
| KR (1) | KR102027205B1 (https=) |
| CN (1) | CN105431936B (https=) |
| DE (1) | DE112014001279B4 (https=) |
| TW (1) | TWI598961B (https=) |
| WO (1) | WO2014152510A1 (https=) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015112308A1 (en) | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
| US9899499B2 (en) | 2014-09-04 | 2018-02-20 | Sunedison Semiconductor Limited (Uen201334164H) | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
| EP3221885B1 (en) | 2014-11-18 | 2019-10-23 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
| WO2016081367A1 (en) | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION |
| EP3221884B1 (en) | 2014-11-18 | 2022-06-01 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafers with charge trapping layers and method of manufacturing thereof |
| US10283402B2 (en) | 2015-03-03 | 2019-05-07 | Globalwafers Co., Ltd. | Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress |
| WO2016149113A1 (en) | 2015-03-17 | 2016-09-22 | Sunedison Semiconductor Limited | Thermally stable charge trapping layer for use in manufacture of semiconductor-on-insulator structures |
| US9881832B2 (en) | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
| JP2016201454A (ja) * | 2015-04-09 | 2016-12-01 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
| WO2016196060A1 (en) | 2015-06-01 | 2016-12-08 | Sunedison Semiconductor Limited | A method of manufacturing semiconductor-on-insulator |
| EP3739620B1 (en) | 2015-06-01 | 2022-02-16 | GlobalWafers Co., Ltd. | A silicon germanium-on-insulator structure |
| KR102424963B1 (ko) | 2015-07-30 | 2022-07-25 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
| JP6749394B2 (ja) | 2015-11-20 | 2020-09-02 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 滑らかな半導体表面の製造方法 |
| FR3046877B1 (fr) | 2016-01-14 | 2018-01-19 | Soitec | Procede de lissage de la surface d'une structure |
| WO2017142704A1 (en) | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface |
| US9831115B2 (en) | 2016-02-19 | 2017-11-28 | Sunedison Semiconductor Limited (Uen201334164H) | Process flow for manufacturing semiconductor on insulator structures in parallel |
| US10622247B2 (en) | 2016-02-19 | 2020-04-14 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a buried high resistivity layer |
| WO2017155806A1 (en) | 2016-03-07 | 2017-09-14 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof |
| US11114332B2 (en) | 2016-03-07 | 2021-09-07 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof |
| EP3427293B1 (en) | 2016-03-07 | 2021-05-05 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
| US11848227B2 (en) | 2016-03-07 | 2023-12-19 | Globalwafers Co., Ltd. | Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment |
| EP3469120B1 (en) | 2016-06-08 | 2022-02-02 | GlobalWafers Co., Ltd. | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
| US10269617B2 (en) | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
| WO2018080772A1 (en) | 2016-10-26 | 2018-05-03 | Sunedison Semiconductor Limited | High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency |
| US10468295B2 (en) | 2016-12-05 | 2019-11-05 | GlobalWafers Co. Ltd. | High resistivity silicon-on-insulator structure and method of manufacture thereof |
| JP7110204B2 (ja) | 2016-12-28 | 2022-08-01 | サンエディソン・セミコンダクター・リミテッド | イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法 |
| FR3061988B1 (fr) * | 2017-01-13 | 2019-11-01 | Soitec | Procede de lissage de surface d'un substrat semiconducteur sur isolant |
| SG11201913769RA (en) | 2017-07-14 | 2020-01-30 | Sunedison Semiconductor Ltd | Method of manufacture of a semiconductor on insulator structure |
| EP3728704B1 (en) * | 2017-12-21 | 2023-02-01 | GlobalWafers Co., Ltd. | Method of treating a single crystal silicon ingot to improve the lls ring/core pattern |
| SG11202009989YA (en) | 2018-04-27 | 2020-11-27 | Globalwafers Co Ltd | Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate |
| WO2019236320A1 (en) | 2018-06-08 | 2019-12-12 | Globalwafers Co., Ltd. | Method for transfer of a thin layer of silicon |
| CN112420915B (zh) * | 2020-11-23 | 2022-12-23 | 济南晶正电子科技有限公司 | 复合衬底的制备方法、复合薄膜及电子元器件 |
| CN115884589A (zh) * | 2021-09-27 | 2023-03-31 | 长鑫存储技术有限公司 | 一种半导体结构及其制备方法 |
| US20250069945A1 (en) | 2023-08-24 | 2025-02-27 | Globalwafers Co., Ltd. | Methods of preparing silicon-on-insulator structures using epitaxial wafers |
| FR3159469A1 (fr) * | 2024-02-15 | 2025-08-22 | Soitec | Procédé de lissage des surfaces libres et rugueuses d’une pluralité de substrats de silicium sur isolant |
| US20250293073A1 (en) | 2024-03-18 | 2025-09-18 | Globalwafers Co., Ltd. | Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structures |
| US20260005066A1 (en) | 2024-06-28 | 2026-01-01 | Globalwafers Co., Ltd. | Methods for controlling flatness of handle structures for use in semiconductor-on-insulator structures |
| US20260015728A1 (en) | 2024-07-10 | 2026-01-15 | Globalwafers Co., Ltd. | Systems and methods for reactor apparatus control during semiconductor wafer processes |
| US20260018457A1 (en) | 2024-07-10 | 2026-01-15 | Globalwafers Co., Ltd. | Methods of processing semiconductor-on-insulator structures using clean-and-etch operation |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| EP0553852B1 (en) * | 1992-01-30 | 2003-08-20 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| FR2777115B1 (fr) | 1998-04-07 | 2001-07-13 | Commissariat Energie Atomique | Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede |
| JP3358550B2 (ja) * | 1998-07-07 | 2002-12-24 | 信越半導体株式会社 | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| US6743495B2 (en) * | 2001-03-30 | 2004-06-01 | Memc Electronic Materials, Inc. | Thermal annealing process for producing silicon wafers with improved surface characteristics |
| TW550681B (en) * | 2001-06-22 | 2003-09-01 | Memc Electronic Materials | Process for producing silicon on insulator structure having intrinsic gettering by ion implantation |
| JPWO2003046993A1 (ja) * | 2001-11-29 | 2005-04-14 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
| US20040060899A1 (en) * | 2002-10-01 | 2004-04-01 | Applied Materials, Inc. | Apparatuses and methods for treating a silicon film |
| JP2006210899A (ja) * | 2004-12-28 | 2006-08-10 | Shin Etsu Chem Co Ltd | Ｓｏｉウエーハの製造方法及びｓｏｉウェーハ |
| JP2006294737A (ja) * | 2005-04-07 | 2006-10-26 | Sumco Corp | Ｓｏｉ基板の製造方法及びその製造における剥離ウェーハの再生処理方法。 |
| JP2007059704A (ja) * | 2005-08-25 | 2007-03-08 | Sumco Corp | 貼合せ基板の製造方法及び貼合せ基板 |
| KR100972213B1 (ko) * | 2005-12-27 | 2010-07-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Ｓｏｉ 웨이퍼의 제조 방법 및 ｓｏｉ 웨이퍼 |
| JP5082299B2 (ja) * | 2006-05-25 | 2012-11-28 | 株式会社Ｓｕｍｃｏ | 半導体基板の製造方法 |
| JP5143477B2 (ja) * | 2007-05-31 | 2013-02-13 | 信越化学工業株式会社 | Ｓｏｉウエーハの製造方法 |
| JP2010098167A (ja) * | 2008-10-17 | 2010-04-30 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法 |
| WO2010062852A1 (en) * | 2008-11-26 | 2010-06-03 | Memc Electronic Materials, Inc. | Method for processing a silicon-on-insulator structure |
| JP5310004B2 (ja) * | 2009-01-07 | 2013-10-09 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| US8080464B2 (en) * | 2009-12-29 | 2011-12-20 | MEMC Electronics Materials, Inc, | Methods for processing silicon on insulator wafers |
| JP5541136B2 (ja) * | 2010-12-15 | 2014-07-09 | 信越半導体株式会社 | 貼り合わせｓｏｉウエーハの製造方法 |
-
2014
- 2014-03-13 US US14/209,083 patent/US9202711B2/en active Active
- 2014-03-14 WO PCT/US2014/027418 patent/WO2014152510A1/en not_active Ceased
- 2014-03-14 KR KR1020157029121A patent/KR102027205B1/ko active Active
- 2014-03-14 TW TW103109754A patent/TWI598961B/zh active
- 2014-03-14 DE DE112014001279.3T patent/DE112014001279B4/de active Active
- 2014-03-14 CN CN201480026992.3A patent/CN105431936B/zh active Active
- 2014-03-14 JP JP2016502429A patent/JP6373354B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016516304A5 (https=) | ||
| JP2010034523A5 (https=) | ||
| JP2013062499A5 (https=) | ||
| JP2011176293A5 (https=) | ||
| JP2015035607A5 (https=) | ||
| JP2010056543A5 (https=) | ||
| JP2014033181A5 (ja) | 絶縁膜の作製方法、半導体装置の作製方法、及び半導体装置 | |
| JP2012209544A5 (https=) | ||
| JP2012084860A5 (https=) | ||
| JP2009027150A5 (https=) | ||
| JP2012049516A5 (https=) | ||
| JP2011129895A5 (https=) | ||
| JP2009212502A5 (https=) | ||
| JP2009260312A5 (https=) | ||
| JP2013038404A5 (https=) | ||
| TW201614719A (en) | Semiconductor manufacturing method and semiconductor manufacturing apparatus | |
| JP2013516063A5 (https=) | ||
| MX2016012594A (es) | Acristalamiento provisto con una pila de capas delgadas para proteccion solar. | |
| JP2009260314A5 (https=) | ||
| WO2012013965A9 (en) | Method of producing a light emitting device | |
| JP2014082324A5 (https=) | ||
| MY166589A (en) | Methods for annealing semiconductor window layers | |
| JP2009212503A5 (https=) | ||
| JP2009260315A5 (https=) | ||
| JP2011091388A5 (ja) | 半導体装置の作製方法 |