JP2016516303A - 縦型電界効果素子の温度補償のための素子構造および方法 - Google Patents

縦型電界効果素子の温度補償のための素子構造および方法 Download PDF

Info

Publication number
JP2016516303A
JP2016516303A JP2016502207A JP2016502207A JP2016516303A JP 2016516303 A JP2016516303 A JP 2016516303A JP 2016502207 A JP2016502207 A JP 2016502207A JP 2016502207 A JP2016502207 A JP 2016502207A JP 2016516303 A JP2016516303 A JP 2016516303A
Authority
JP
Japan
Prior art keywords
temperature coefficient
resistance
negative temperature
thin film
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016502207A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016516303A5 (enExample
Inventor
ハリントン、トーマス、イー．
Original Assignee
ディー スリー セミコンダクター エルエルシー
ディー スリー セミコンダクター エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ディー スリー セミコンダクター エルエルシー, ディー スリー セミコンダクター エルエルシー filed Critical ディー スリー セミコンダクター エルエルシー
Publication of JP2016516303A publication Critical patent/JP2016516303A/ja
Publication of JP2016516303A5 publication Critical patent/JP2016516303A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2016502207A 2013-03-13 2014-03-13 縦型電界効果素子の温度補償のための素子構造および方法 Pending JP2016516303A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778698P 2013-03-13 2013-03-13
US61/778,698 2013-03-13
PCT/US2014/026668 WO2014160453A2 (en) 2013-03-13 2014-03-13 Device architecture and method for temperature compensation of vertical field effect devices

Publications (2)

Publication Number Publication Date
JP2016516303A true JP2016516303A (ja) 2016-06-02
JP2016516303A5 JP2016516303A5 (enExample) 2017-04-13

Family

ID=51523591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016502207A Pending JP2016516303A (ja) 2013-03-13 2014-03-13 縦型電界効果素子の温度補償のための素子構造および方法

Country Status (6)

Country Link
US (1) US20140264343A1 (enExample)
EP (1) EP2973720A4 (enExample)
JP (1) JP2016516303A (enExample)
KR (1) KR20150131195A (enExample)
CN (1) CN105393362A (enExample)
WO (1) WO2014160453A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014115314B4 (de) * 2014-10-21 2018-10-11 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate mit einem thermistor mit negativem temperaturkoeffizienten und herstellungsverfahren
DE102015112919B4 (de) * 2015-08-06 2019-12-24 Infineon Technologies Ag Halbleiterbauelemente, eine Halbleiterdiode und ein Verfahren zum Bilden eines Halbleiterbauelements
CN108701713A (zh) * 2015-10-01 2018-10-23 D3半导体有限公司 在垂直功率半导体装置中的源极－栅极区域架构
US9806186B2 (en) 2015-10-02 2017-10-31 D3 Semiconductor LLC Termination region architecture for vertical power transistors
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
CN113035950B (zh) * 2019-12-25 2022-08-05 株洲中车时代半导体有限公司 Igbt芯片及其制备方法
US11869762B2 (en) 2020-10-13 2024-01-09 Alpha Power Solutions Limited Semiconductor device with temperature sensing component
US12074198B2 (en) * 2021-11-02 2024-08-27 Analog Power Conversion LLC Semiconductor device with improved temperature uniformity
CN115976482B (zh) * 2022-12-08 2024-07-23 中国科学院新疆理化技术研究所 一种基于离子注入的ntc复合热敏薄膜的制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587643A (ja) * 1991-09-26 1993-04-06 Anritsu Corp 極低温用温度計
JPH09321221A (ja) * 1996-03-25 1997-12-12 Seiko Instr Inc 半導体装置とその製造方法
WO2005122273A1 (ja) * 2004-06-11 2005-12-22 Matsushita Electric Industrial Co., Ltd. パワー素子
JP2007180116A (ja) * 2005-12-27 2007-07-12 Toyota Central Res & Dev Lab Inc 半導体装置
JP2010171417A (ja) * 2008-12-25 2010-08-05 Rohm Co Ltd 半導体装置
JP2011199000A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477935A (en) * 1966-06-07 1969-11-11 Union Carbide Corp Method of forming thin film resistors by cathodic sputtering
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
US5304918A (en) * 1992-01-22 1994-04-19 Samsung Semiconductor, Inc. Reference circuit for high speed integrated circuits
US6627949B2 (en) * 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
DE10053957C2 (de) * 2000-10-31 2002-10-31 Infineon Technologies Ag Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung
US7956672B2 (en) * 2004-03-30 2011-06-07 Ricoh Company, Ltd. Reference voltage generating circuit
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
US7397691B2 (en) * 2006-04-24 2008-07-08 International Business Machines Corporation Static random access memory cell with improved stability
JP4483900B2 (ja) * 2007-06-21 2010-06-16 株式会社デンソー 炭化珪素半導体装置の製造方法
US8436426B2 (en) * 2010-08-24 2013-05-07 Stmicroelectronics Pte Ltd. Multi-layer via-less thin film resistor
US20120126313A1 (en) * 2010-11-23 2012-05-24 Microchip Technology Incorporated Ultra thin die to improve series resistance of a fet
WO2012144271A1 (ja) * 2011-04-19 2012-10-26 日産自動車株式会社 半導体装置およびその製造方法
US8710615B2 (en) * 2011-08-31 2014-04-29 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587643A (ja) * 1991-09-26 1993-04-06 Anritsu Corp 極低温用温度計
JPH09321221A (ja) * 1996-03-25 1997-12-12 Seiko Instr Inc 半導体装置とその製造方法
WO2005122273A1 (ja) * 2004-06-11 2005-12-22 Matsushita Electric Industrial Co., Ltd. パワー素子
JP2007180116A (ja) * 2005-12-27 2007-07-12 Toyota Central Res & Dev Lab Inc 半導体装置
JP2010171417A (ja) * 2008-12-25 2010-08-05 Rohm Co Ltd 半導体装置
JP2011199000A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR20150131195A (ko) 2015-11-24
CN105393362A (zh) 2016-03-09
WO2014160453A3 (en) 2014-11-27
US20140264343A1 (en) 2014-09-18
WO2014160453A2 (en) 2014-10-02
EP2973720A2 (en) 2016-01-20
EP2973720A4 (en) 2016-11-02

Similar Documents

Publication Publication Date Title
JP2016516303A (ja) 縦型電界効果素子の温度補償のための素子構造および方法
JP5306193B2 (ja) ｐ型チャネルを含む炭化シリコンスイッチングデバイスおよびその形成方法
KR102667168B1 (ko) 개선된 단락 내구 시간을 갖는 반도체 디바이스 및 그 제조 방법들
US8841682B2 (en) Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods
JPH08505492A (ja) 炭化ケイ素におけるパワーｍｏｓｆｅｔ
JP7150609B2 (ja) 短チャネルのトレンチパワーｍｏｓｆｅｔ
JP6068042B2 (ja) 炭化珪素半導体装置およびその製造方法
JP2017521875A (ja) 半導体デバイスにおける単純化された電荷平衡
JP2019140165A (ja) 炭化珪素半導体素子およびその製造方法
CN104282537B (zh) 半导体器件及制造方法
US20110147764A1 (en) Transistors with a dielectric channel depletion layer and related fabrication methods
US20080142811A1 (en) MOSFET devices and methods of fabrication
JP5473398B2 (ja) 半導体装置およびその製造方法
CN111276540A (zh) 沟槽栅功率mosfet及其制造方法
JP2015090883A (ja) 炭化珪素半導体装置
CN110521000A (zh) 改进的场阻止晶闸管结构及其制造方法
CN108172618B (zh) 高k介质沟槽横向双扩散金属氧化物宽带隙半导体场效应管及其制作方法
KR101581690B1 (ko) 측면 확산 ｍｏｓ 소자 및 그의 제조 방법
KR101367491B1 (ko) 단일 ｆｌｉ 구조를 갖는 반도체 소자의 제조 방법 및 그 제조 방법으로 제조된 반도체 소자
JP2011165861A (ja) 炭化珪素半導体素子
JP2022544750A (ja) プレーナ型ＳｉＣ ＭＯＳＦＥＴのための最適化されたレトログレードチャネル注入
JP2022112246A (ja) 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US10068985B2 (en) Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device
JP7561316B2 (ja) 炭化珪素半導体装置
Mikamura et al. 4H-SiC V-groove trench MOSFETs with low specific on-state resistance and high reliability

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170310

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180220

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20181113