JP2016516303A5 - - Google Patents
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- JP2016516303A5 JP2016516303A5 JP2016502207A JP2016502207A JP2016516303A5 JP 2016516303 A5 JP2016516303 A5 JP 2016516303A5 JP 2016502207 A JP2016502207 A JP 2016502207A JP 2016502207 A JP2016502207 A JP 2016502207A JP 2016516303 A5 JP2016516303 A5 JP 2016516303A5
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- JP
- Japan
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- patent document
- application publication
- patent application
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- 230000009467 reduction Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361778698P | 2013-03-13 | 2013-03-13 | |
| US61/778,698 | 2013-03-13 | ||
| PCT/US2014/026668 WO2014160453A2 (en) | 2013-03-13 | 2014-03-13 | Device architecture and method for temperature compensation of vertical field effect devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016516303A JP2016516303A (ja) | 2016-06-02 |
| JP2016516303A5 true JP2016516303A5 (enExample) | 2017-04-13 |
Family
ID=51523591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016502207A Pending JP2016516303A (ja) | 2013-03-13 | 2014-03-13 | 縦型電界効果素子の温度補償のための素子構造および方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140264343A1 (enExample) |
| EP (1) | EP2973720A4 (enExample) |
| JP (1) | JP2016516303A (enExample) |
| KR (1) | KR20150131195A (enExample) |
| CN (1) | CN105393362A (enExample) |
| WO (1) | WO2014160453A2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014115314B4 (de) * | 2014-10-21 | 2018-10-11 | Infineon Technologies Austria Ag | Bipolartransistor mit isoliertem gate mit einem thermistor mit negativem temperaturkoeffizienten und herstellungsverfahren |
| DE102015112919B4 (de) * | 2015-08-06 | 2019-12-24 | Infineon Technologies Ag | Halbleiterbauelemente, eine Halbleiterdiode und ein Verfahren zum Bilden eines Halbleiterbauelements |
| EP3357084A4 (en) | 2015-10-01 | 2019-06-19 | D3 Semiconductor LLC | SOURCE GATE AREA ARCHITECTURE IN A VERTICAL POWER SEMICONDUCTOR ELEMENT |
| US9806186B2 (en) | 2015-10-02 | 2017-10-31 | D3 Semiconductor LLC | Termination region architecture for vertical power transistors |
| DE102016104256B3 (de) * | 2016-03-09 | 2017-07-06 | Infineon Technologies Ag | Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand |
| CN113035950B (zh) * | 2019-12-25 | 2022-08-05 | 株洲中车时代半导体有限公司 | Igbt芯片及其制备方法 |
| US11869762B2 (en) | 2020-10-13 | 2024-01-09 | Alpha Power Solutions Limited | Semiconductor device with temperature sensing component |
| US12074198B2 (en) * | 2021-11-02 | 2024-08-27 | Analog Power Conversion LLC | Semiconductor device with improved temperature uniformity |
| CN115976482B (zh) * | 2022-12-08 | 2024-07-23 | 中国科学院新疆理化技术研究所 | 一种基于离子注入的ntc复合热敏薄膜的制备方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3477935A (en) * | 1966-06-07 | 1969-11-11 | Union Carbide Corp | Method of forming thin film resistors by cathodic sputtering |
| US4837606A (en) * | 1984-02-22 | 1989-06-06 | General Electric Company | Vertical MOSFET with reduced bipolar effects |
| JP3030337B2 (ja) * | 1991-09-26 | 2000-04-10 | アンリツ株式会社 | 極低温用温度計 |
| US5304918A (en) * | 1992-01-22 | 1994-04-19 | Samsung Semiconductor, Inc. | Reference circuit for high speed integrated circuits |
| JP3054937B2 (ja) * | 1996-03-25 | 2000-06-19 | セイコーインスツルメンツ株式会社 | 半導体装置とその製造方法 |
| US6627949B2 (en) * | 2000-06-02 | 2003-09-30 | General Semiconductor, Inc. | High voltage power MOSFET having low on-resistance |
| DE10053957C2 (de) * | 2000-10-31 | 2002-10-31 | Infineon Technologies Ag | Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung |
| US7956672B2 (en) * | 2004-03-30 | 2011-06-07 | Ricoh Company, Ltd. | Reference voltage generating circuit |
| EP1775774A4 (en) * | 2004-06-11 | 2008-10-22 | Matsushita Electric Industrial Co Ltd | POWER ELEMENT |
| DE102005061263B4 (de) * | 2005-12-20 | 2007-10-11 | Infineon Technologies Austria Ag | Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben |
| JP5225546B2 (ja) * | 2005-12-27 | 2013-07-03 | 株式会社豊田中央研究所 | 半導体装置 |
| US7397691B2 (en) * | 2006-04-24 | 2008-07-08 | International Business Machines Corporation | Static random access memory cell with improved stability |
| JP4483900B2 (ja) * | 2007-06-21 | 2010-06-16 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP5588670B2 (ja) * | 2008-12-25 | 2014-09-10 | ローム株式会社 | 半導体装置 |
| JP2011199000A (ja) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | 半導体装置およびその製造方法 |
| US8436426B2 (en) * | 2010-08-24 | 2013-05-07 | Stmicroelectronics Pte Ltd. | Multi-layer via-less thin film resistor |
| US20120126313A1 (en) * | 2010-11-23 | 2012-05-24 | Microchip Technology Incorporated | Ultra thin die to improve series resistance of a fet |
| BR112013027105B1 (pt) * | 2011-04-19 | 2021-01-12 | Nissan Motor Co., Ltd. | dispositivo semicondutor |
| US8710615B2 (en) * | 2011-08-31 | 2014-04-29 | Infineon Technologies Ag | Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device |
-
2014
- 2014-03-13 WO PCT/US2014/026668 patent/WO2014160453A2/en not_active Ceased
- 2014-03-13 EP EP14772971.9A patent/EP2973720A4/en not_active Withdrawn
- 2014-03-13 CN CN201480027352.4A patent/CN105393362A/zh active Pending
- 2014-03-13 US US14/210,038 patent/US20140264343A1/en not_active Abandoned
- 2014-03-13 JP JP2016502207A patent/JP2016516303A/ja active Pending
- 2014-03-13 KR KR1020157028652A patent/KR20150131195A/ko not_active Withdrawn
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