CN105393362A - 用于垂直场效应器件的温度补偿的器件架构和方法 - Google Patents

用于垂直场效应器件的温度补偿的器件架构和方法 Download PDF

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Publication number
CN105393362A
CN105393362A CN201480027352.4A CN201480027352A CN105393362A CN 105393362 A CN105393362 A CN 105393362A CN 201480027352 A CN201480027352 A CN 201480027352A CN 105393362 A CN105393362 A CN 105393362A
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CN
China
Prior art keywords
resistance
temperature coefficient
semiconductor device
negative temperature
film
Prior art date
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Pending
Application number
CN201480027352.4A
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English (en)
Chinese (zh)
Inventor
T.E.哈林顿
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D3 Semiconductor LLC
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D3 Semiconductor LLC
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Filing date
Publication date
Application filed by D3 Semiconductor LLC filed Critical D3 Semiconductor LLC
Publication of CN105393362A publication Critical patent/CN105393362A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201480027352.4A 2013-03-13 2014-03-13 用于垂直场效应器件的温度补偿的器件架构和方法 Pending CN105393362A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778698P 2013-03-13 2013-03-13
US61/778,698 2013-03-13
PCT/US2014/026668 WO2014160453A2 (en) 2013-03-13 2014-03-13 Device architecture and method for temperature compensation of vertical field effect devices

Publications (1)

Publication Number Publication Date
CN105393362A true CN105393362A (zh) 2016-03-09

Family

ID=51523591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480027352.4A Pending CN105393362A (zh) 2013-03-13 2014-03-13 用于垂直场效应器件的温度补偿的器件架构和方法

Country Status (6)

Country Link
US (1) US20140264343A1 (enExample)
EP (1) EP2973720A4 (enExample)
JP (1) JP2016516303A (enExample)
KR (1) KR20150131195A (enExample)
CN (1) CN105393362A (enExample)
WO (1) WO2014160453A2 (enExample)

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DE102014115314B4 (de) * 2014-10-21 2018-10-11 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate mit einem thermistor mit negativem temperaturkoeffizienten und herstellungsverfahren
DE102015112919B4 (de) * 2015-08-06 2019-12-24 Infineon Technologies Ag Halbleiterbauelemente, eine Halbleiterdiode und ein Verfahren zum Bilden eines Halbleiterbauelements
CN108701713A (zh) * 2015-10-01 2018-10-23 D3半导体有限公司 在垂直功率半导体装置中的源极－栅极区域架构
US9806186B2 (en) 2015-10-02 2017-10-31 D3 Semiconductor LLC Termination region architecture for vertical power transistors
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
CN113035950B (zh) * 2019-12-25 2022-08-05 株洲中车时代半导体有限公司 Igbt芯片及其制备方法
US11869762B2 (en) 2020-10-13 2024-01-09 Alpha Power Solutions Limited Semiconductor device with temperature sensing component
US12074198B2 (en) * 2021-11-02 2024-08-27 Analog Power Conversion LLC Semiconductor device with improved temperature uniformity
CN115976482B (zh) * 2022-12-08 2024-07-23 中国科学院新疆理化技术研究所 一种基于离子注入的ntc复合热敏薄膜的制备方法

Citations (5)

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CN1443372A (zh) * 2000-06-02 2003-09-17 通用半导体公司 功率mos场效应管及其制造方法
US20080318400A1 (en) * 2007-06-21 2008-12-25 Denso Corporation Method for manufacturing SIC semiconductor device
CN101764160A (zh) * 2008-12-25 2010-06-30 罗姆股份有限公司 半导体装置
CN102376404A (zh) * 2010-08-24 2012-03-14 意法半导体有限公司 多层无过孔薄膜电阻器
US20130049159A1 (en) * 2011-08-31 2013-02-28 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device

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US3477935A (en) * 1966-06-07 1969-11-11 Union Carbide Corp Method of forming thin film resistors by cathodic sputtering
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
JP3030337B2 (ja) * 1991-09-26 2000-04-10 アンリツ株式会社 極低温用温度計
US5304918A (en) * 1992-01-22 1994-04-19 Samsung Semiconductor, Inc. Reference circuit for high speed integrated circuits
JP3054937B2 (ja) * 1996-03-25 2000-06-19 セイコーインスツルメンツ株式会社 半導体装置とその製造方法
DE10053957C2 (de) * 2000-10-31 2002-10-31 Infineon Technologies Ag Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung
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JP4064436B2 (ja) * 2004-06-11 2008-03-19 松下電器産業株式会社 パワー素子
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
JP5225546B2 (ja) * 2005-12-27 2013-07-03 株式会社豊田中央研究所 半導体装置
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Publication number Priority date Publication date Assignee Title
CN1443372A (zh) * 2000-06-02 2003-09-17 通用半导体公司 功率mos场效应管及其制造方法
US20080318400A1 (en) * 2007-06-21 2008-12-25 Denso Corporation Method for manufacturing SIC semiconductor device
CN101764160A (zh) * 2008-12-25 2010-06-30 罗姆股份有限公司 半导体装置
CN102376404A (zh) * 2010-08-24 2012-03-14 意法半导体有限公司 多层无过孔薄膜电阻器
US20130049159A1 (en) * 2011-08-31 2013-02-28 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
KR20150131195A (ko) 2015-11-24
WO2014160453A3 (en) 2014-11-27
JP2016516303A (ja) 2016-06-02
US20140264343A1 (en) 2014-09-18
WO2014160453A2 (en) 2014-10-02
EP2973720A2 (en) 2016-01-20
EP2973720A4 (en) 2016-11-02

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