JP2016512929A - 相互接続部材をプレコーティングすることを含むフリップチップ組立方法 - Google Patents
相互接続部材をプレコーティングすることを含むフリップチップ組立方法 Download PDFInfo
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- JP2016512929A JP2016512929A JP2016503710A JP2016503710A JP2016512929A JP 2016512929 A JP2016512929 A JP 2016512929A JP 2016503710 A JP2016503710 A JP 2016503710A JP 2016503710 A JP2016503710 A JP 2016503710A JP 2016512929 A JP2016512929 A JP 2016512929A
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Abstract
Description
第1及び第2の電子部品を組み立てる方法であって、
前記第1の部品の組立表面に接続部材を形成し、前記第2の部品の組立表面に接続部材を形成する段階;
前記第1及び/又は第2の部品の組立表面に絶縁性硬化材料の液体層を堆積し、少なくとも前記表面に形成される接続部材をコーティングする段階;
前記第1の部品の接続部材の前に前記第2の部品の接続部材を配するように互いに前記第1及び第2の部品を配置する段階;
前記第1の部品の接続部材及び前記第2の部品の接続部材でそれぞれ形成される電気接続部を生成するために所定の方向に沿って前記第1及び/又は第2の部品に力を加える段階;及び
前記硬化材料を硬化する段階;
を含む、第1及び第2の電子部品を組み立てる方法を目的とする。
前記第1の部品の接続部材は、開口を有する中空挿入物であり、前記第2の部品の接続部材は、前記挿入物より小さい硬度を有する中実部材であり、前記力の印加は、前記中実部材に挿入される前記中空部材をもたらし、
各挿入物は、
その表面の少なくとも一部が酸化されていない、前記中実部材より大きい硬度を有する金属コア;及び
少なくとも前記コアの酸化されていない部分を覆う金属層であって、前記第1の層が、前記コアより高い可塑性を有し、及び/又は、酸化できない金属で作られる、金属層;
を備え、
前記中空挿入物の形状、前記中実部材の形状、及び/又は、挿入中におけるその相対位置は、前記中空挿入物の開口端部の部分が前記挿入中に解放されたままであるように選択され;
前記硬化材料は、脱酸フラックスを含まない。
前記硬化材料の層は、前記組立表面の所定の部分に堆積され、
前記硬化材料は、所定の放射線の印加に引き続いて所定の現像液中で不溶性になることができるネガティブフォトレジストであり、
前記中実部材に対する前記中空挿入物の挿入に続いて、
前記組立表面の前記部分を覆う樹脂層部分を除いて前記放射線は前記樹脂層に印加され、
前記領域を覆うフォトレジストは、前記現像液を付けることによって除去される。
1.CMOS読出アレイの表面に10マイクロメートルピッチを有する5μメートルの高さを有する十字の横断面の開口チューブを製造する段階;
2.InGaAs検出器アレイの表面に10マイクロメートルピッチを有する5マイクロメートルの高さを有するインジウムバンプを製造する段階;
3.例えば周知のスピンコーターを用いて、チューブを備えるCMOSアレイの表面に脱酸剤なく5.5マイクロメートルの厚さのエポキシ接着剤又はフォトレジストを有する層をディスペンスする段階;
4.例えばワイヤボンド接続のためにバンプを備える領域などの望まれないと考えられる領域から、以下に記載されるように、例えば、これらの領域のフォトマスキングの技術を行うことによってエポキシ接着剤を除去する段階;
5.読出アレイの十字挿入物への読出アレイのバンプの挿入によって、例えば、集約的な検出器製造の文脈でC2Wタイプのハイブリダイゼーション(チップトゥウエハ)によって、検出器アレイ及び読出アレイをハイブリッド化する段階;
6.このように得られた垂直接続部をコーティングするエポキシ接着剤を架橋する段階であって、アレイが強い熱サイクルに対して非常に敏感である場合に、エポキシ接着剤が、さらに好ましくは周囲温度で架橋するように選択される段階。
52 第2の電子部品
56 接続部材
58 接続部材
70 絶縁性硬化材料
72 開口端部の部分
74 開口端部の部分
76 開口端部の部分
78 開口端部の部分
Claims (6)
- 第1及び第2の電子部品(50、52)を組み立てる方法であって、
前記第1の部品(50)の組立表面に接続部材を形成し、前記第2の部品(52)の組立表面に接続部材を形成する段階;
前記第1及び/又は第2の部品の組立表面に絶縁性硬化材料(70)の液体層を堆積し、少なくとも前記表面に形成される接続部材をコーティングする段階;
前記第1の部品の接続部材の前に前記第2の部品の接続部材を配するように互いに前記第1及び第2の部品(50、52)を配置する段階;
前記第1の部品(50)の接続部材(56)及び前記第2の部品(52)の接続部材(58)でそれぞれ形成される電気接続部を生成するために所定の方向(A)に沿って前記第1及び/又は第2の部品(50、52)に力を加える段階;及び
前記硬化材料(70)を硬化する段階;
を含み、
前記第1の部品(50)の接続部材(56)が、開口を有する中空挿入物であり、前記第2の部品(52)の接続部材(58)が、前記挿入物(56)より小さい硬度を有する中実部材(58)であり、前記力の印加が、前記中実部材(58)に挿入される前記中空部材(56)をもたらし、
各挿入物(56)が、
その表面の少なくとも一部が酸化されていない、前記中実部材(58)より大きい硬度を有する金属コア;及び
少なくとも前記コアの酸化されていない部分を覆う金属層であって、前記第1の層が、前記コアより高い可塑性を有し、及び/又は、酸化できない金属で作られる、金属層;
を備え、
前記中空挿入物(56)の形状、前記中実部材(58)の形状、及び/又は、挿入中におけるその相対位置が、前記中空挿入物(56)の開口端部の部分(72、74、76、78)が前記挿入中に解放されたままであるように選択され;
前記硬化材料(70)が、脱酸フラックスを含まないことを特徴とする、第1及び第2の電子部品(50、52)を組み立てる方法。 - 前記組立方向に垂直な軸に沿った前記中空挿入物(56)の長さが、前記軸に沿った前記中実部材(58)の長さより大きいことを特徴とする、請求項1に記載の第1及び第2の電子部品(50、52)を組み立てる方法。
- 前記中空挿入物(56)が、前記中実部材(58)の一端に挿入されることを特徴とする、請求項1又は2に記載の第1及び第2の電子部品(50、52)を組み立てる方法。
- 前記中空挿入物(56)の開口端部が、前記挿入中に前記中実部材(58)の外側に部分的に配置される複数の枝を有することを特徴とする、請求項1から3の何れか一項に記載の第1及び第2の電子部品(50、52)を組み立てる方法。
- 前記硬化材料(70)が、1012オーム/cmより大きい電気抵抗率を有する、請求項1から4の何れか一項に記載の第1及び第2の電子部品(50、52)を組み立てる方法。
- 前記硬化材料(70)の層が、前記組立表面の所定の部分に堆積され、
前記硬化材料(70)が、所定の放射線の印加に引き続いて所定の現像液中で不溶性になることができるネガティブフォトレジストであり、
前記中実部材に対する前記中空挿入物の挿入に続いて、前記組立表面の前記部分を覆う樹脂層部分を除いて前記放射線が前記樹脂層に印加され、
前記領域を覆うフォトレジストが、前記現像液を付けることによって除去されることを特徴とする、請求項1から5の何れか一項に記載の第1及び第2の電子部品(50、52)を組み立てる方法。
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FR1352557A FR3003688B1 (fr) | 2013-03-22 | 2013-03-22 | Procede d'assemblage flip chip comportant le pre-enrobage d'elements d'interconnexion |
FR1352557 | 2013-03-22 | ||
PCT/FR2014/050665 WO2014147355A1 (fr) | 2013-03-22 | 2014-03-21 | Procede d'assemblage flip chip comportant le pre-enrobage d'elements d'interconnexion |
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EP (1) | EP2976784A1 (ja) |
JP (1) | JP6501752B2 (ja) |
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DE102014002824A1 (de) * | 2014-02-25 | 2015-08-27 | Northrop Grumman Litef Gmbh | Verfahren zur Herstellung eines Bauteils |
TWI582929B (zh) * | 2016-06-07 | 2017-05-11 | 南茂科技股份有限公司 | 晶片封裝結構 |
TWI636533B (zh) | 2017-09-15 | 2018-09-21 | Industrial Technology Research Institute | 半導體封裝結構 |
EP3926673A1 (en) * | 2020-06-17 | 2021-12-22 | Tohoku-Microtec Co., Ltd | Semiconductor device with repair bumps with walls of a hard material biting into parent bumps with walls of a soft material |
KR20220000294A (ko) * | 2020-06-25 | 2022-01-03 | 삼성전자주식회사 | 반도체 패키지 |
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KR20150135211A (ko) | 2015-12-02 |
WO2014147355A1 (fr) | 2014-09-25 |
FR3003688B1 (fr) | 2016-07-01 |
FR3003688A1 (fr) | 2014-09-26 |
US20150380395A1 (en) | 2015-12-31 |
KR102305916B1 (ko) | 2021-09-27 |
US9406662B2 (en) | 2016-08-02 |
EP2976784A1 (fr) | 2016-01-27 |
JP6501752B2 (ja) | 2019-04-17 |
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