JP2016219551A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016219551A5 JP2016219551A5 JP2015101336A JP2015101336A JP2016219551A5 JP 2016219551 A5 JP2016219551 A5 JP 2016219551A5 JP 2015101336 A JP2015101336 A JP 2015101336A JP 2015101336 A JP2015101336 A JP 2015101336A JP 2016219551 A5 JP2016219551 A5 JP 2016219551A5
- Authority
- JP
- Japan
- Prior art keywords
- circuit region
- semiconductor layer
- passivation film
- peripheral circuit
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 claims 24
- 230000002093 peripheral effect Effects 0.000 claims 22
- 239000004065 semiconductor Substances 0.000 claims 21
- 238000003384 imaging method Methods 0.000 claims 20
- 229910052739 hydrogen Inorganic materials 0.000 claims 7
- 239000001257 hydrogen Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 150000002431 hydrogen Chemical class 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015101336A JP6671864B2 (ja) | 2015-05-18 | 2015-05-18 | 撮像装置の製造方法および撮像装置 |
| US15/156,880 US9923023B2 (en) | 2015-05-18 | 2016-05-17 | Image pickup apparatus and method for manufacturing image pickup apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015101336A JP6671864B2 (ja) | 2015-05-18 | 2015-05-18 | 撮像装置の製造方法および撮像装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016219551A JP2016219551A (ja) | 2016-12-22 |
| JP2016219551A5 true JP2016219551A5 (enExample) | 2018-06-14 |
| JP6671864B2 JP6671864B2 (ja) | 2020-03-25 |
Family
ID=57325708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015101336A Active JP6671864B2 (ja) | 2015-05-18 | 2015-05-18 | 撮像装置の製造方法および撮像装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9923023B2 (enExample) |
| JP (1) | JP6671864B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
| US9673239B1 (en) * | 2016-01-15 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device and method |
| JP6990997B2 (ja) * | 2017-06-06 | 2022-01-12 | 株式会社日立製作所 | Ｍｅｍｓデバイス |
| JP6598830B2 (ja) * | 2017-08-31 | 2019-10-30 | キヤノン株式会社 | 光電変換装置の製造方法 |
| US11244978B2 (en) * | 2018-10-17 | 2022-02-08 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and equipment including the same |
| JP2020145397A (ja) * | 2018-10-17 | 2020-09-10 | キヤノン株式会社 | 光電変換装置、および、それを含む機器 |
| US11121160B2 (en) | 2018-10-17 | 2021-09-14 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region |
| JP7128136B2 (ja) * | 2019-03-08 | 2022-08-30 | 株式会社東芝 | 接合型電界効果トランジスタ |
| JP7481811B2 (ja) | 2019-07-26 | 2024-05-13 | キヤノン株式会社 | 半導体装置 |
| US11177159B2 (en) | 2019-11-13 | 2021-11-16 | Micron Technology, Inc. | Memory arrays and methods used in forming a memory array comprising strings of memory cells |
| US12183751B2 (en) * | 2021-03-25 | 2024-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fluorine passivation in a pixel sensor |
| CN113363271B (zh) * | 2021-05-31 | 2023-12-22 | 武汉新芯集成电路制造有限公司 | 感光阵列及成像设备 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3722367B2 (ja) * | 2002-03-19 | 2005-11-30 | ソニー株式会社 | 固体撮像素子の製造方法 |
| JP3658384B2 (ja) | 2002-09-13 | 2005-06-08 | 松下電器産業株式会社 | Ｍｏｓ型撮像装置およびこれを組み込んだカメラ |
| JP2005260177A (ja) | 2004-03-15 | 2005-09-22 | Toshiba Corp | 半導体装置の製造方法 |
| US8035142B2 (en) | 2004-07-08 | 2011-10-11 | Micron Technology, Inc. | Deuterated structures for image sensors and methods for forming the same |
| JP2007141938A (ja) | 2005-11-15 | 2007-06-07 | Canon Inc | 固体撮像素子及びその製造方法 |
| TWI389250B (zh) | 2006-01-18 | 2013-03-11 | Az Electronic Mat Ip Japan Kk | 矽石質膜之製法及附有由它製造的矽石質膜之基板 |
| JP2009059824A (ja) | 2007-08-30 | 2009-03-19 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| US7675101B2 (en) * | 2007-09-07 | 2010-03-09 | Dongbu Hitek Co., Ltd. | Image sensor and manufacturing method thereof |
| JP4457142B2 (ja) * | 2007-10-17 | 2010-04-28 | シャープ株式会社 | 固体撮像素子、カメラモジュールおよび電子情報機器 |
| JP4900228B2 (ja) | 2007-12-18 | 2012-03-21 | ソニー株式会社 | 固体撮像素子の製造方法 |
| KR101476367B1 (ko) * | 2008-01-29 | 2014-12-26 | 삼성전자주식회사 | 이미지 센서의 제조 방법 |
| JP2009188068A (ja) * | 2008-02-04 | 2009-08-20 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| JP2009290089A (ja) | 2008-05-30 | 2009-12-10 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| JP2009295799A (ja) * | 2008-06-05 | 2009-12-17 | Sharp Corp | 固体撮像装置の製造方法 |
| JP2010016128A (ja) | 2008-07-02 | 2010-01-21 | Canon Inc | 固体撮像装置及びその製造方法 |
| JP2010016242A (ja) | 2008-07-04 | 2010-01-21 | Canon Inc | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
| KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
| JP2012023319A (ja) | 2010-07-16 | 2012-02-02 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| JP6132525B2 (ja) * | 2012-11-30 | 2017-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6278608B2 (ja) * | 2013-04-08 | 2018-02-14 | キヤノン株式会社 | 半導体装置およびその製造方法 |
-
2015
- 2015-05-18 JP JP2015101336A patent/JP6671864B2/ja active Active
-
2016
- 2016-05-17 US US15/156,880 patent/US9923023B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016219551A5 (enExample) | ||
| JP2014022561A5 (enExample) | ||
| JP2015135938A5 (enExample) | ||
| JP2013247246A5 (enExample) | ||
| CN102468312A (zh) | 半导体摄像装置及其制造方法 | |
| JP2015195104A5 (enExample) | ||
| JP2015195378A5 (enExample) | ||
| JP2013187360A5 (enExample) | ||
| JP2015002340A5 (enExample) | ||
| JP2016138935A5 (enExample) | ||
| JP2013175494A5 (enExample) | ||
| JP2015164181A5 (enExample) | ||
| JP2015188083A5 (ja) | 撮像装置及び電子機器 | |
| JP2012015274A5 (enExample) | ||
| JP2016018859A5 (enExample) | ||
| JP2013143532A (ja) | 半導体装置 | |
| JP2015012174A5 (enExample) | ||
| JP2014006518A5 (enExample) | ||
| JP2013219082A5 (enExample) | ||
| JP2016018859A (ja) | 固体撮像装置及びその製造方法 | |
| JP2016219468A5 (enExample) | ||
| JP2015119093A5 (enExample) | ||
| JP6685653B2 (ja) | 固体撮像装置の製造方法 | |
| US20160172406A1 (en) | Semiconductor device and solid-state imaging device | |
| JP6116878B2 (ja) | 半導体装置 |