JP2016213411A5 - - Google Patents

Download PDF

Info

Publication number
JP2016213411A5
JP2016213411A5 JP2015098286A JP2015098286A JP2016213411A5 JP 2016213411 A5 JP2016213411 A5 JP 2016213411A5 JP 2015098286 A JP2015098286 A JP 2015098286A JP 2015098286 A JP2015098286 A JP 2015098286A JP 2016213411 A5 JP2016213411 A5 JP 2016213411A5
Authority
JP
Japan
Prior art keywords
scattered light
light intensity
value
time
psl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015098286A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016213411A (ja
JP6299668B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2015098286A external-priority patent/JP6299668B2/ja
Priority to JP2015098286A priority Critical patent/JP6299668B2/ja
Priority to US15/570,278 priority patent/US10234281B2/en
Priority to DE112016001802.9T priority patent/DE112016001802B4/de
Priority to CN201680027570.7A priority patent/CN107615468B/zh
Priority to PCT/JP2016/001315 priority patent/WO2016181592A1/ja
Priority to KR1020177032618A priority patent/KR102262072B1/ko
Publication of JP2016213411A publication Critical patent/JP2016213411A/ja
Publication of JP2016213411A5 publication Critical patent/JP2016213411A5/ja
Publication of JP6299668B2 publication Critical patent/JP6299668B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015098286A 2015-05-13 2015-05-13 ヘイズの評価方法 Active JP6299668B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015098286A JP6299668B2 (ja) 2015-05-13 2015-05-13 ヘイズの評価方法
PCT/JP2016/001315 WO2016181592A1 (ja) 2015-05-13 2016-03-10 ヘイズの評価方法
DE112016001802.9T DE112016001802B4 (de) 2015-05-13 2016-03-10 Verfahren zum Bewerten einer Trübung
CN201680027570.7A CN107615468B (zh) 2015-05-13 2016-03-10 雾度的评价方法
US15/570,278 US10234281B2 (en) 2015-05-13 2016-03-10 Method for evaluating haze
KR1020177032618A KR102262072B1 (ko) 2015-05-13 2016-03-10 헤이즈의 평가 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015098286A JP6299668B2 (ja) 2015-05-13 2015-05-13 ヘイズの評価方法

Publications (3)

Publication Number Publication Date
JP2016213411A JP2016213411A (ja) 2016-12-15
JP2016213411A5 true JP2016213411A5 (enExample) 2017-11-30
JP6299668B2 JP6299668B2 (ja) 2018-03-28

Family

ID=57249125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015098286A Active JP6299668B2 (ja) 2015-05-13 2015-05-13 ヘイズの評価方法

Country Status (6)

Country Link
US (1) US10234281B2 (enExample)
JP (1) JP6299668B2 (enExample)
KR (1) KR102262072B1 (enExample)
CN (1) CN107615468B (enExample)
DE (1) DE112016001802B4 (enExample)
WO (1) WO2016181592A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201918700A (zh) 2017-05-05 2019-05-16 美商3M新設資產公司 散射測量系統及其使用方法
JP7054634B2 (ja) * 2018-02-21 2022-04-14 セーレン株式会社 測定装置
CN109916945A (zh) * 2019-04-10 2019-06-21 浙江众泰汽车制造有限公司 一种雾度评价装置及雾度评价方法
US12241845B2 (en) * 2021-06-24 2025-03-04 Beijing Tongmei Xtal Technology Co., Ltd. Method and setup for detecting surface haze of materials
JP7700751B2 (ja) * 2021-09-10 2025-07-01 株式会社Sumco 半導体ウェーハの評価方法および半導体ウェーハの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198869A (en) * 1990-10-15 1993-03-30 Vlsi Standards, Inc. Reference wafer for haze calibration
JP2719257B2 (ja) 1991-12-18 1998-02-25 住友電気工業株式会社 分光分析装置
US5599464A (en) 1995-10-06 1997-02-04 Vlsi Standards, Inc. Formation of atomic scale vertical features for topographic instrument calibration
US5691812A (en) 1996-03-22 1997-11-25 Ade Optical Systems Corporation Calibration standard for calibrating a defect inspection system and a method of forming same
DE69930700T2 (de) * 1998-09-04 2006-11-09 Canon K.K. Halbleitersubstrat und Verfahren zu seiner Herstellung
JP3341212B2 (ja) 2000-06-15 2002-11-05 スガ試験機株式会社 ヘーズ値測定装置及び測定方法
JP2002310902A (ja) * 2001-04-16 2002-10-23 Central Glass Co Ltd 波長選択性のある散乱光測定方法
FR2888833B1 (fr) 2005-07-22 2007-08-24 Commissariat Energie Atomique Procede de realisation d'etalons de bruit de fond diffus comportant des nano-structures sur une couche mince isolante
KR100675216B1 (ko) * 2005-08-23 2007-01-29 삼성전기주식회사 헤이즈 측정 방법 및 그 장치
KR100871876B1 (ko) * 2006-09-26 2008-12-03 나노전광 주식회사 광검출기를 이용한 포토마스크 표면의 헤이즈 검출장치 및그 검출방법
US8194233B2 (en) * 2008-04-11 2012-06-05 Microsoft Corporation Method and system to reduce stray light reflection error in time-of-flight sensor arrays
JP5357509B2 (ja) 2008-10-31 2013-12-04 株式会社日立ハイテクノロジーズ 検査装置、検査方法および検査装置の校正システム
JP5223998B2 (ja) * 2010-11-29 2013-06-26 大日本印刷株式会社 評価用基板

Similar Documents

Publication Publication Date Title
JP2016517045A5 (enExample)
JP2016213411A5 (enExample)
JP2019508789A5 (enExample)
JP2015127807A5 (enExample)
JP2015233159A5 (enExample)
JP2018064407A5 (enExample)
JP2014237817A5 (enExample)
JP2017005051A5 (enExample)
JP2015509122A5 (enExample)
JP2015079947A5 (ja) 半導体装置
JP2015186128A5 (enExample)
JP2015109264A5 (ja) 蓄電装置用電極、蓄電装置及び電子機器
JP2019511922A5 (enExample)
JP2016038993A5 (enExample)
JP2017047613A5 (enExample)
JP2014506960A5 (enExample)
JP2018502425A5 (enExample)
JP2016135110A5 (enExample)
JP2019518197A5 (enExample)
JP2017116570A5 (enExample)
JP2018105709A5 (enExample)
JP2015194403A5 (enExample)
JP2017173215A5 (enExample)
JP2018004514A5 (enExample)
JP2016066983A5 (enExample)