JP2019518197A5 - - Google Patents
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- JP2019518197A5 JP2019518197A5 JP2018551873A JP2018551873A JP2019518197A5 JP 2019518197 A5 JP2019518197 A5 JP 2019518197A5 JP 2018551873 A JP2018551873 A JP 2018551873A JP 2018551873 A JP2018551873 A JP 2018551873A JP 2019518197 A5 JP2019518197 A5 JP 2019518197A5
- Authority
- JP
- Japan
- Prior art keywords
- referred
- measurement volume
- dimensions
- assuming
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1652835A FR3049710B1 (fr) | 2016-03-31 | 2016-03-31 | Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique |
| FR1652835 | 2016-03-31 | ||
| PCT/EP2017/055967 WO2017167573A1 (fr) | 2016-03-31 | 2017-03-14 | Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019518197A JP2019518197A (ja) | 2019-06-27 |
| JP2019518197A5 true JP2019518197A5 (enExample) | 2020-04-23 |
Family
ID=55863116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018551873A Pending JP2019518197A (ja) | 2016-03-31 | 2017-03-14 | マイクロエレクトロニクス用または光学用の基板をレーザドップラ効果によって検査するための方法およびシステム |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11092644B2 (enExample) |
| EP (1) | EP3436807B1 (enExample) |
| JP (1) | JP2019518197A (enExample) |
| KR (1) | KR20180123699A (enExample) |
| CN (1) | CN109073566B (enExample) |
| FR (1) | FR3049710B1 (enExample) |
| SG (1) | SG11201808303YA (enExample) |
| TW (1) | TW201802461A (enExample) |
| WO (1) | WO2017167573A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI718627B (zh) * | 2019-08-19 | 2021-02-11 | 崑山科技大學 | 以表面波頻率偵測材料表面瑕疵之方法 |
| JP7636401B2 (ja) * | 2019-09-20 | 2025-02-26 | ノードソン コーポレーション | レーザー干渉法システムおよび方法 |
| CN113503822B (zh) * | 2021-06-01 | 2023-08-18 | 南京中安半导体设备有限责任公司 | 晶圆厚度的测量方法及其测量装置 |
| EP4202423B1 (en) | 2021-12-23 | 2025-09-24 | Unity Semiconductor | A method and system for discriminating defects present on a frontside from defects present on a backside of a transparent substrate |
| EP4647746A1 (en) | 2024-05-07 | 2025-11-12 | Unity Semiconductor | Support for a dark field optical inspection system |
| CN120395592B (zh) * | 2025-07-03 | 2025-09-12 | 成都承奥科技有限公司 | 一种石墨环加工用高精度打磨检测设备及其使用方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02253166A (ja) * | 1989-03-27 | 1990-10-11 | Yuji Ikeda | 光ファイバレーザドップラ流速計の光学装置 |
| JP2711140B2 (ja) * | 1989-06-08 | 1998-02-10 | 三菱電機株式会社 | 徴細粒子測定装置 |
| US5343290A (en) * | 1992-06-11 | 1994-08-30 | International Business Machines Corporation | Surface particle detection using heterodyne interferometer |
| FR2699269B1 (fr) * | 1992-12-10 | 1995-01-13 | Merlin Gerin | Dispositif de mesure interferrométrique. |
| US5883714A (en) * | 1996-10-07 | 1999-03-16 | Phase Metrics | Method and apparatus for detecting defects on a disk using interferometric analysis on reflected light |
| JP3375876B2 (ja) * | 1998-02-06 | 2003-02-10 | 株式会社日立製作所 | 結晶欠陥計測方法及び結晶欠陥計測装置 |
| WO2002039099A2 (en) * | 2000-11-13 | 2002-05-16 | Koninklijke Philips Electronics N.V. | Measurement of surface defects |
| US7068363B2 (en) * | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
| US9909986B2 (en) * | 2003-10-15 | 2018-03-06 | Applied Research And Photonics, Inc. | Thickness determination and layer characterization using terahertz scanning reflectometry |
| US7420669B2 (en) * | 2004-07-01 | 2008-09-02 | Midwest Research Institute | Optic probe for semiconductor characterization |
| CN1740782B (zh) * | 2005-09-15 | 2010-04-28 | 中国科学院上海光学精密机械研究所 | 倾斜入射光散射式硅片表面缺陷检测仪 |
| FR2927175B1 (fr) * | 2008-02-05 | 2011-02-18 | Altatech Semiconductor | Dispositif d'inspection de plaquettes semi-conductrices |
| JP5520736B2 (ja) * | 2010-07-30 | 2014-06-11 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及び欠陥検査装置 |
| CN102937411B (zh) * | 2012-11-09 | 2015-01-21 | 清华大学 | 一种双频光栅干涉仪位移测量系统 |
| CN103322927B (zh) * | 2013-06-19 | 2016-04-20 | 清华大学 | 一种三自由度外差光栅干涉仪位移测量系统 |
| KR102609862B1 (ko) * | 2014-04-17 | 2023-12-04 | 펨토매트릭스, 인코포레이티드. | 웨이퍼 계측 기술들 |
| FR3026485B1 (fr) * | 2014-09-29 | 2016-09-23 | Altatech Semiconductor | Procede et systeme d'inspection de plaquettes pour l'electronique, l'optique ou l'optoelectronique |
| FR3026484B1 (fr) | 2014-09-29 | 2018-06-15 | Altatech Semiconductor | Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique |
-
2016
- 2016-03-31 FR FR1652835A patent/FR3049710B1/fr active Active
-
2017
- 2017-03-14 SG SG11201808303YA patent/SG11201808303YA/en unknown
- 2017-03-14 CN CN201780021710.4A patent/CN109073566B/zh active Active
- 2017-03-14 WO PCT/EP2017/055967 patent/WO2017167573A1/fr not_active Ceased
- 2017-03-14 KR KR1020187029770A patent/KR20180123699A/ko not_active Withdrawn
- 2017-03-14 US US16/087,056 patent/US11092644B2/en active Active
- 2017-03-14 EP EP17715055.4A patent/EP3436807B1/fr active Active
- 2017-03-14 JP JP2018551873A patent/JP2019518197A/ja active Pending
- 2017-03-29 TW TW106110548A patent/TW201802461A/zh unknown
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