JP2019518197A5 - - Google Patents

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Publication number
JP2019518197A5
JP2019518197A5 JP2018551873A JP2018551873A JP2019518197A5 JP 2019518197 A5 JP2019518197 A5 JP 2019518197A5 JP 2018551873 A JP2018551873 A JP 2018551873A JP 2018551873 A JP2018551873 A JP 2018551873A JP 2019518197 A5 JP2019518197 A5 JP 2019518197A5
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Japan
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referred
measurement volume
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assuming
plane
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JP2018551873A
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JP2019518197A (ja
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Priority claimed from FR1652835A external-priority patent/FR3049710B1/fr
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Publication of JP2019518197A5 publication Critical patent/JP2019518197A5/ja
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Description

正規直交基準フレーム（ｘ、ｙ、ｚ）が、検査対象のウェハの表面の平面内の（ｘ、ｙ）と、この表面に垂直なｚ（この方向の測定体積の寸法は、Ｄｚと称される）とによって定義される。この図において、ｙが半径方向に延びていると仮定する（この方向の測定体積の寸法は、Ｄｙと称され、ｙに直交する方向ｘの測定体積の寸法は、Ｄｘと称される）。
JP2018551873A 2016-03-31 2017-03-14 マイクロエレクトロニクス用または光学用の基板をレーザドップラ効果によって検査するための方法およびシステム Pending JP2019518197A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1652835 2016-03-31
FR1652835A FR3049710B1 (fr) 2016-03-31 2016-03-31 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
PCT/EP2017/055967 WO2017167573A1 (fr) 2016-03-31 2017-03-14 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique

Publications (2)

Publication Number Publication Date
JP2019518197A JP2019518197A (ja) 2019-06-27
JP2019518197A5 true JP2019518197A5 (ja) 2020-04-23

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ID=55863116

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Application Number Title Priority Date Filing Date
JP2018551873A Pending JP2019518197A (ja) 2016-03-31 2017-03-14 マイクロエレクトロニクス用または光学用の基板をレーザドップラ効果によって検査するための方法およびシステム

Country Status (9)

Country Link
US (1) US11092644B2 (ja)
EP (1) EP3436807B1 (ja)
JP (1) JP2019518197A (ja)
KR (1) KR20180123699A (ja)
CN (1) CN109073566B (ja)
FR (1) FR3049710B1 (ja)
SG (1) SG11201808303YA (ja)
TW (1) TW201802461A (ja)
WO (1) WO2017167573A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI718627B (zh) * 2019-08-19 2021-02-11 崑山科技大學 以表面波頻率偵測材料表面瑕疵之方法
CN113503822B (zh) * 2021-06-01 2023-08-18 南京中安半导体设备有限责任公司 晶圆厚度的测量方法及其测量装置
EP4202423A1 (en) 2021-12-23 2023-06-28 Unity Semiconductor A method and system for discriminating defects present on a frontside from defects present on a backside of a transparent substrate

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253166A (ja) * 1989-03-27 1990-10-11 Yuji Ikeda 光ファイバレーザドップラ流速計の光学装置
JP2711140B2 (ja) * 1989-06-08 1998-02-10 三菱電機株式会社 徴細粒子測定装置
US5343290A (en) * 1992-06-11 1994-08-30 International Business Machines Corporation Surface particle detection using heterodyne interferometer
FR2699269B1 (fr) 1992-12-10 1995-01-13 Merlin Gerin Dispositif de mesure interferrométrique.
US5883714A (en) * 1996-10-07 1999-03-16 Phase Metrics Method and apparatus for detecting defects on a disk using interferometric analysis on reflected light
JP3375876B2 (ja) * 1998-02-06 2003-02-10 株式会社日立製作所 結晶欠陥計測方法及び結晶欠陥計測装置
WO2002039099A2 (en) * 2000-11-13 2002-05-16 Koninklijke Philips Electronics N.V. Measurement of surface defects
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US9909986B2 (en) * 2003-10-15 2018-03-06 Applied Research And Photonics, Inc. Thickness determination and layer characterization using terahertz scanning reflectometry
WO2006014152A1 (en) * 2004-07-01 2006-02-09 Midwest Research Institute Optic probe for semiconductor characterization
CN1740782B (zh) * 2005-09-15 2010-04-28 中国科学院上海光学精密机械研究所 倾斜入射光散射式硅片表面缺陷检测仪
FR2927175B1 (fr) * 2008-02-05 2011-02-18 Altatech Semiconductor Dispositif d'inspection de plaquettes semi-conductrices
JP5520736B2 (ja) * 2010-07-30 2014-06-11 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
CN102937411B (zh) * 2012-11-09 2015-01-21 清华大学 一种双频光栅干涉仪位移测量系统
CN103322927B (zh) * 2013-06-19 2016-04-20 清华大学 一种三自由度外差光栅干涉仪位移测量系统
WO2015161136A1 (en) * 2014-04-17 2015-10-22 Femtometrix, Inc. Wafer metrology technologies
FR3026485B1 (fr) * 2014-09-29 2016-09-23 Altatech Semiconductor Procede et systeme d'inspection de plaquettes pour l'electronique, l'optique ou l'optoelectronique
FR3026484B1 (fr) * 2014-09-29 2018-06-15 Altatech Semiconductor Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique

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