FR3049710B1 - Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique - Google Patents

Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique Download PDF

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Publication number
FR3049710B1
FR3049710B1 FR1652835A FR1652835A FR3049710B1 FR 3049710 B1 FR3049710 B1 FR 3049710B1 FR 1652835 A FR1652835 A FR 1652835A FR 1652835 A FR1652835 A FR 1652835A FR 3049710 B1 FR3049710 B1 FR 3049710B1
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France
Prior art keywords
wafer
light
measurement volume
optics
collected
Prior art date
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Active
Application number
FR1652835A
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English (en)
French (fr)
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FR3049710A1 (fr
Inventor
Philippe Gastaldo
Mayeul DURAND DE GEVIGNEY
Tristan Combier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unity Semiconductor SAS
Original Assignee
Altatech Semiconductor SAS
Unity Semiconductor SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1652835A priority Critical patent/FR3049710B1/fr
Application filed by Altatech Semiconductor SAS, Unity Semiconductor SAS filed Critical Altatech Semiconductor SAS
Priority to US16/087,056 priority patent/US11092644B2/en
Priority to JP2018551873A priority patent/JP2019518197A/ja
Priority to CN201780021710.4A priority patent/CN109073566B/zh
Priority to SG11201808303YA priority patent/SG11201808303YA/en
Priority to KR1020187029770A priority patent/KR20180123699A/ko
Priority to PCT/EP2017/055967 priority patent/WO2017167573A1/fr
Priority to EP17715055.4A priority patent/EP3436807B1/fr
Priority to TW106110548A priority patent/TW201802461A/zh
Publication of FR3049710A1 publication Critical patent/FR3049710A1/fr
Application granted granted Critical
Publication of FR3049710B1 publication Critical patent/FR3049710B1/fr
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
FR1652835A 2016-03-31 2016-03-31 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique Active FR3049710B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1652835A FR3049710B1 (fr) 2016-03-31 2016-03-31 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
JP2018551873A JP2019518197A (ja) 2016-03-31 2017-03-14 マイクロエレクトロニクス用または光学用の基板をレーザドップラ効果によって検査するための方法およびシステム
CN201780021710.4A CN109073566B (zh) 2016-03-31 2017-03-14 用于通过激光多普勒效应检测用于微电子或光学的板的方法和系统
SG11201808303YA SG11201808303YA (en) 2016-03-31 2017-03-14 Method and system for inspecting boards for microelectronics or optics by laser doppler effect
US16/087,056 US11092644B2 (en) 2016-03-31 2017-03-14 Method and system for inspecting boards for microelectronics or optics by laser doppler effect
KR1020187029770A KR20180123699A (ko) 2016-03-31 2017-03-14 레이저 도플러 효과에 의한 마이크로전자공학 또는 광학을 위한 보드들을 검사하기 위한 방법 및 시스템
PCT/EP2017/055967 WO2017167573A1 (fr) 2016-03-31 2017-03-14 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
EP17715055.4A EP3436807B1 (fr) 2016-03-31 2017-03-14 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
TW106110548A TW201802461A (zh) 2016-03-31 2017-03-29 藉由雷射都卜勒效應以檢測用於微電子或光學的晶圓之方法與系統

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1652835A FR3049710B1 (fr) 2016-03-31 2016-03-31 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
FR1652835 2016-03-31

Publications (2)

Publication Number Publication Date
FR3049710A1 FR3049710A1 (fr) 2017-10-06
FR3049710B1 true FR3049710B1 (fr) 2020-06-19

Family

ID=55863116

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1652835A Active FR3049710B1 (fr) 2016-03-31 2016-03-31 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique

Country Status (9)

Country Link
US (1) US11092644B2 (enExample)
EP (1) EP3436807B1 (enExample)
JP (1) JP2019518197A (enExample)
KR (1) KR20180123699A (enExample)
CN (1) CN109073566B (enExample)
FR (1) FR3049710B1 (enExample)
SG (1) SG11201808303YA (enExample)
TW (1) TW201802461A (enExample)
WO (1) WO2017167573A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI718627B (zh) * 2019-08-19 2021-02-11 崑山科技大學 以表面波頻率偵測材料表面瑕疵之方法
JP7636401B2 (ja) * 2019-09-20 2025-02-26 ノードソン コーポレーション レーザー干渉法システムおよび方法
CN113503822B (zh) * 2021-06-01 2023-08-18 南京中安半导体设备有限责任公司 晶圆厚度的测量方法及其测量装置
EP4202423B1 (en) 2021-12-23 2025-09-24 Unity Semiconductor A method and system for discriminating defects present on a frontside from defects present on a backside of a transparent substrate
EP4647746A1 (en) 2024-05-07 2025-11-12 Unity Semiconductor Support for a dark field optical inspection system
CN120395592B (zh) * 2025-07-03 2025-09-12 成都承奥科技有限公司 一种石墨环加工用高精度打磨检测设备及其使用方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253166A (ja) * 1989-03-27 1990-10-11 Yuji Ikeda 光ファイバレーザドップラ流速計の光学装置
JP2711140B2 (ja) * 1989-06-08 1998-02-10 三菱電機株式会社 徴細粒子測定装置
US5343290A (en) * 1992-06-11 1994-08-30 International Business Machines Corporation Surface particle detection using heterodyne interferometer
FR2699269B1 (fr) * 1992-12-10 1995-01-13 Merlin Gerin Dispositif de mesure interferrométrique.
US5883714A (en) * 1996-10-07 1999-03-16 Phase Metrics Method and apparatus for detecting defects on a disk using interferometric analysis on reflected light
JP3375876B2 (ja) * 1998-02-06 2003-02-10 株式会社日立製作所 結晶欠陥計測方法及び結晶欠陥計測装置
WO2002039099A2 (en) * 2000-11-13 2002-05-16 Koninklijke Philips Electronics N.V. Measurement of surface defects
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US9909986B2 (en) * 2003-10-15 2018-03-06 Applied Research And Photonics, Inc. Thickness determination and layer characterization using terahertz scanning reflectometry
US7420669B2 (en) * 2004-07-01 2008-09-02 Midwest Research Institute Optic probe for semiconductor characterization
CN1740782B (zh) * 2005-09-15 2010-04-28 中国科学院上海光学精密机械研究所 倾斜入射光散射式硅片表面缺陷检测仪
FR2927175B1 (fr) * 2008-02-05 2011-02-18 Altatech Semiconductor Dispositif d'inspection de plaquettes semi-conductrices
JP5520736B2 (ja) * 2010-07-30 2014-06-11 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
CN102937411B (zh) * 2012-11-09 2015-01-21 清华大学 一种双频光栅干涉仪位移测量系统
CN103322927B (zh) * 2013-06-19 2016-04-20 清华大学 一种三自由度外差光栅干涉仪位移测量系统
KR102609862B1 (ko) * 2014-04-17 2023-12-04 펨토매트릭스, 인코포레이티드. 웨이퍼 계측 기술들
FR3026485B1 (fr) * 2014-09-29 2016-09-23 Altatech Semiconductor Procede et systeme d'inspection de plaquettes pour l'electronique, l'optique ou l'optoelectronique
FR3026484B1 (fr) 2014-09-29 2018-06-15 Altatech Semiconductor Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique

Also Published As

Publication number Publication date
TW201802461A (zh) 2018-01-16
CN109073566B (zh) 2022-07-19
US11092644B2 (en) 2021-08-17
US20200271718A1 (en) 2020-08-27
WO2017167573A1 (fr) 2017-10-05
JP2019518197A (ja) 2019-06-27
CN109073566A (zh) 2018-12-21
KR20180123699A (ko) 2018-11-19
FR3049710A1 (fr) 2017-10-06
EP3436807B1 (fr) 2020-12-02
EP3436807A1 (fr) 2019-02-06
SG11201808303YA (en) 2018-10-30

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