KR20180123699A - 레이저 도플러 효과에 의한 마이크로전자공학 또는 광학을 위한 보드들을 검사하기 위한 방법 및 시스템 - Google Patents

레이저 도플러 효과에 의한 마이크로전자공학 또는 광학을 위한 보드들을 검사하기 위한 방법 및 시스템 Download PDF

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KR20180123699A
KR20180123699A KR1020187029770A KR20187029770A KR20180123699A KR 20180123699 A KR20180123699 A KR 20180123699A KR 1020187029770 A KR1020187029770 A KR 1020187029770A KR 20187029770 A KR20187029770 A KR 20187029770A KR 20180123699 A KR20180123699 A KR 20180123699A
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South Korea
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wafer
light
measurement volume
light source
beams
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Korean (ko)
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필립 가스탈도
마뉴엘 듀랑 드 게비니
트리스탄 콩비에
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유니티 세미컨덕터
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020187029770A 2016-03-31 2017-03-14 레이저 도플러 효과에 의한 마이크로전자공학 또는 광학을 위한 보드들을 검사하기 위한 방법 및 시스템 Withdrawn KR20180123699A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1652835A FR3049710B1 (fr) 2016-03-31 2016-03-31 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
FR1652835 2016-03-31
PCT/EP2017/055967 WO2017167573A1 (fr) 2016-03-31 2017-03-14 Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique

Publications (1)

Publication Number Publication Date
KR20180123699A true KR20180123699A (ko) 2018-11-19

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Application Number Title Priority Date Filing Date
KR1020187029770A Withdrawn KR20180123699A (ko) 2016-03-31 2017-03-14 레이저 도플러 효과에 의한 마이크로전자공학 또는 광학을 위한 보드들을 검사하기 위한 방법 및 시스템

Country Status (9)

Country Link
US (1) US11092644B2 (enExample)
EP (1) EP3436807B1 (enExample)
JP (1) JP2019518197A (enExample)
KR (1) KR20180123699A (enExample)
CN (1) CN109073566B (enExample)
FR (1) FR3049710B1 (enExample)
SG (1) SG11201808303YA (enExample)
TW (1) TW201802461A (enExample)
WO (1) WO2017167573A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI718627B (zh) * 2019-08-19 2021-02-11 崑山科技大學 以表面波頻率偵測材料表面瑕疵之方法
JP7636401B2 (ja) * 2019-09-20 2025-02-26 ノードソン コーポレーション レーザー干渉法システムおよび方法
CN113503822B (zh) * 2021-06-01 2023-08-18 南京中安半导体设备有限责任公司 晶圆厚度的测量方法及其测量装置
EP4202423B1 (en) 2021-12-23 2025-09-24 Unity Semiconductor A method and system for discriminating defects present on a frontside from defects present on a backside of a transparent substrate
EP4647746A1 (en) 2024-05-07 2025-11-12 Unity Semiconductor Support for a dark field optical inspection system
CN120395592B (zh) * 2025-07-03 2025-09-12 成都承奥科技有限公司 一种石墨环加工用高精度打磨检测设备及其使用方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPH02253166A (ja) * 1989-03-27 1990-10-11 Yuji Ikeda 光ファイバレーザドップラ流速計の光学装置
JP2711140B2 (ja) * 1989-06-08 1998-02-10 三菱電機株式会社 徴細粒子測定装置
US5343290A (en) * 1992-06-11 1994-08-30 International Business Machines Corporation Surface particle detection using heterodyne interferometer
FR2699269B1 (fr) * 1992-12-10 1995-01-13 Merlin Gerin Dispositif de mesure interferrométrique.
US5883714A (en) * 1996-10-07 1999-03-16 Phase Metrics Method and apparatus for detecting defects on a disk using interferometric analysis on reflected light
JP3375876B2 (ja) * 1998-02-06 2003-02-10 株式会社日立製作所 結晶欠陥計測方法及び結晶欠陥計測装置
WO2002039099A2 (en) * 2000-11-13 2002-05-16 Koninklijke Philips Electronics N.V. Measurement of surface defects
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US9909986B2 (en) * 2003-10-15 2018-03-06 Applied Research And Photonics, Inc. Thickness determination and layer characterization using terahertz scanning reflectometry
US7420669B2 (en) * 2004-07-01 2008-09-02 Midwest Research Institute Optic probe for semiconductor characterization
CN1740782B (zh) * 2005-09-15 2010-04-28 中国科学院上海光学精密机械研究所 倾斜入射光散射式硅片表面缺陷检测仪
FR2927175B1 (fr) * 2008-02-05 2011-02-18 Altatech Semiconductor Dispositif d'inspection de plaquettes semi-conductrices
JP5520736B2 (ja) * 2010-07-30 2014-06-11 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
CN102937411B (zh) * 2012-11-09 2015-01-21 清华大学 一种双频光栅干涉仪位移测量系统
CN103322927B (zh) * 2013-06-19 2016-04-20 清华大学 一种三自由度外差光栅干涉仪位移测量系统
KR102609862B1 (ko) * 2014-04-17 2023-12-04 펨토매트릭스, 인코포레이티드. 웨이퍼 계측 기술들
FR3026485B1 (fr) * 2014-09-29 2016-09-23 Altatech Semiconductor Procede et systeme d'inspection de plaquettes pour l'electronique, l'optique ou l'optoelectronique
FR3026484B1 (fr) 2014-09-29 2018-06-15 Altatech Semiconductor Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique

Also Published As

Publication number Publication date
TW201802461A (zh) 2018-01-16
CN109073566B (zh) 2022-07-19
US11092644B2 (en) 2021-08-17
US20200271718A1 (en) 2020-08-27
WO2017167573A1 (fr) 2017-10-05
JP2019518197A (ja) 2019-06-27
CN109073566A (zh) 2018-12-21
FR3049710A1 (fr) 2017-10-06
EP3436807B1 (fr) 2020-12-02
FR3049710B1 (fr) 2020-06-19
EP3436807A1 (fr) 2019-02-06
SG11201808303YA (en) 2018-10-30

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PA0105 International application

Patent event date: 20181015

Patent event code: PA01051R01D

Comment text: International Patent Application

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PC1203 Withdrawal of no request for examination