JP2016201476A5 - - Google Patents

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Publication number
JP2016201476A5
JP2016201476A5 JP2015081019A JP2015081019A JP2016201476A5 JP 2016201476 A5 JP2016201476 A5 JP 2016201476A5 JP 2015081019 A JP2015081019 A JP 2015081019A JP 2015081019 A JP2015081019 A JP 2015081019A JP 2016201476 A5 JP2016201476 A5 JP 2016201476A5
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JP
Japan
Prior art keywords
film
zirconium oxide
gas
mask
containing zirconium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2015081019A
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English (en)
Japanese (ja)
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JP2016201476A (ja
JP6604738B2 (ja
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Publication date
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Priority to JP2015081019A priority Critical patent/JP6604738B2/ja
Priority claimed from JP2015081019A external-priority patent/JP6604738B2/ja
Priority to TW105109936A priority patent/TWI715563B/zh
Priority to US15/090,971 priority patent/US10290510B2/en
Priority to KR1020160043277A priority patent/KR102401316B1/ko
Publication of JP2016201476A publication Critical patent/JP2016201476A/ja
Publication of JP2016201476A5 publication Critical patent/JP2016201476A5/ja
Application granted granted Critical
Publication of JP6604738B2 publication Critical patent/JP6604738B2/ja
Active legal-status Critical Current
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JP2015081019A 2015-04-10 2015-04-10 プラズマエッチング方法、パターン形成方法及びクリーニング方法 Active JP6604738B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015081019A JP6604738B2 (ja) 2015-04-10 2015-04-10 プラズマエッチング方法、パターン形成方法及びクリーニング方法
TW105109936A TWI715563B (zh) 2015-04-10 2016-03-30 電漿蝕刻方法、圖案形成方法及清洗方法
US15/090,971 US10290510B2 (en) 2015-04-10 2016-04-05 Plasma etching method, pattern forming method and cleaning method
KR1020160043277A KR102401316B1 (ko) 2015-04-10 2016-04-08 플라즈마 에칭 방법, 패턴 형성 방법 및 클리닝 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015081019A JP6604738B2 (ja) 2015-04-10 2015-04-10 プラズマエッチング方法、パターン形成方法及びクリーニング方法

Publications (3)

Publication Number Publication Date
JP2016201476A JP2016201476A (ja) 2016-12-01
JP2016201476A5 true JP2016201476A5 (enExample) 2018-05-10
JP6604738B2 JP6604738B2 (ja) 2019-11-13

Family

ID=57112361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015081019A Active JP6604738B2 (ja) 2015-04-10 2015-04-10 プラズマエッチング方法、パターン形成方法及びクリーニング方法

Country Status (4)

Country Link
US (1) US10290510B2 (enExample)
JP (1) JP6604738B2 (enExample)
KR (1) KR102401316B1 (enExample)
TW (1) TWI715563B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7133975B2 (ja) * 2018-05-11 2022-09-09 東京エレクトロン株式会社 エッチング方法およびエッチング装置
GB201811873D0 (en) 2018-07-20 2018-09-05 Oxford Instruments Nanotechnology Tools Ltd Semiconductor etching methods
CN111261509B (zh) * 2018-11-30 2024-05-10 比亚迪半导体股份有限公司 在硅基体中蚀刻沟槽的方法及其应用
JP7402715B2 (ja) * 2020-03-06 2023-12-21 東京エレクトロン株式会社 ウエハを処理する方法
JP2022146092A (ja) * 2021-03-22 2022-10-05 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20250174454A1 (en) * 2022-03-04 2025-05-29 Tes Co., Ltd Method for treating substrate using boron compound
CN116741626A (zh) * 2022-03-04 2023-09-12 长鑫存储技术有限公司 一种半导体结构的制备方法及半导体结构
CN115376908B (zh) * 2022-08-26 2025-01-17 北京北方华创微电子装备有限公司 GaN衬底的刻蚀方法
CN120530478A (zh) * 2023-01-27 2025-08-22 东京毅力科创株式会社 基板处理方法及基板处理系统
CN120749022A (zh) * 2025-06-17 2025-10-03 北京集成电路装备创新中心有限公司 一种半导体器件的刻蚀方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
US6503845B1 (en) * 2001-05-01 2003-01-07 Applied Materials Inc. Method of etching a tantalum nitride layer in a high density plasma
US7357138B2 (en) * 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US20040014327A1 (en) 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP4283017B2 (ja) * 2003-03-25 2009-06-24 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
EP1629529A2 (en) * 2003-05-30 2006-03-01 Tokyo Electron Limited Method and system for etching a high-k dielectric material
US7012027B2 (en) * 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
JP4540368B2 (ja) * 2004-03-08 2010-09-08 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2006339523A (ja) * 2005-06-03 2006-12-14 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法および高誘電率酸化膜のエッチング方法
US20070056925A1 (en) * 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
JP2009076711A (ja) * 2007-09-21 2009-04-09 Hitachi High-Technologies Corp 半導体装置の製造方法
US8563410B2 (en) * 2009-11-25 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. End-cut first approach for critical dimension control
US20120244693A1 (en) * 2011-03-22 2012-09-27 Tokyo Electron Limited Method for patterning a full metal gate structure
US9099560B2 (en) * 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6255187B2 (ja) * 2013-08-20 2017-12-27 東京エレクトロン株式会社 シリコン酸化膜をエッチングする方法

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