JP2016167581A5 - - Google Patents
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- JP2016167581A5 JP2016167581A5 JP2016024879A JP2016024879A JP2016167581A5 JP 2016167581 A5 JP2016167581 A5 JP 2016167581A5 JP 2016024879 A JP2016024879 A JP 2016024879A JP 2016024879 A JP2016024879 A JP 2016024879A JP 2016167581 A5 JP2016167581 A5 JP 2016167581A5
- Authority
- JP
- Japan
- Prior art keywords
- silver
- film
- thin film
- etching
- containing thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005530 etching Methods 0.000 claims description 132
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 106
- 239000010408 film Substances 0.000 claims description 101
- 229910052709 silver Inorganic materials 0.000 claims description 100
- 239000004332 silver Substances 0.000 claims description 100
- 239000010409 thin film Substances 0.000 claims description 65
- 239000000203 mixture Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 40
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 20
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-M acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-K [O-]P([O-])([O-])=O Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 11
- NHNBFGGVMKEFGY-UHFFFAOYSA-N nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 11
- 239000010452 phosphate Substances 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- LWIHDJKSTIGBAC-UHFFFAOYSA-K Tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N [O--].[Zn++].[In+3] Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- SCVFZCLFOSHCOH-UHFFFAOYSA-M Potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N Potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N Sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- -1 zinc indium Chemical compound 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N Neodymium Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical group [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 235000019798 tripotassium phosphate Nutrition 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N Ammonium dihydrogen phosphate Chemical group [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 2
- DVARTQFDIMZBAA-UHFFFAOYSA-O Ammonium nitrate Chemical compound [NH4+].[O-][N+]([O-])=O DVARTQFDIMZBAA-UHFFFAOYSA-O 0.000 claims description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 2
- 235000011056 potassium acetate Nutrition 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- XLROVYAPLOFLNU-UHFFFAOYSA-N protactinium Chemical compound [Pa] XLROVYAPLOFLNU-UHFFFAOYSA-N 0.000 claims description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M Silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N [O-2].[Zn+2].[Sn+4].[In+3] Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- GUSFEBGYPWJUSS-UHFFFAOYSA-N pentaazanium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O GUSFEBGYPWJUSS-UHFFFAOYSA-N 0.000 claims 1
- PSBAZVJEUNOIDU-UHFFFAOYSA-L potassium;sodium;diacetate Chemical compound [Na+].[K+].CC([O-])=O.CC([O-])=O PSBAZVJEUNOIDU-UHFFFAOYSA-L 0.000 claims 1
- 229940071536 silver acetate Drugs 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- NDVLTYZPCACLMA-UHFFFAOYSA-N Silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229920002456 HOTAIR Polymers 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative Effects 0.000 description 3
- 230000001603 reducing Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- FIDGMLJJLFFOEI-UHFFFAOYSA-N Silver acetilyde Chemical compound [Ag+].[Ag+].[C-]#[C-] FIDGMLJJLFFOEI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 235000019801 trisodium phosphate Nutrition 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- YBCVMFKXIKNREZ-UHFFFAOYSA-N AcOH acetic acid Chemical compound CC(O)=O.CC(O)=O YBCVMFKXIKNREZ-UHFFFAOYSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 239000004135 Bone phosphate Substances 0.000 description 1
- 229940116349 Dibasic Ammonium Phosphate Drugs 0.000 description 1
- 229940111685 Dibasic potassium phosphate Drugs 0.000 description 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L Dipotassium phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 1
- LFLZOWIFJOBEPN-UHFFFAOYSA-N Nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N PO4-PO4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 239000002042 Silver nanowire Substances 0.000 description 1
- XSNQEMWVLMRPFR-UHFFFAOYSA-N Silver nitride Chemical compound [N-3].[Ag+].[Ag+].[Ag+] XSNQEMWVLMRPFR-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 1
- 229910052767 actinium Inorganic materials 0.000 description 1
- 230000000996 additive Effects 0.000 description 1
- 229940010556 ammonium phosphate Drugs 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000001747 exhibiting Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- BZKBCQXYZZXSCO-UHFFFAOYSA-N sodium hydride Inorganic materials [H-].[Na+] BZKBCQXYZZXSCO-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150032426A KR20160108944A (ko) | 2015-03-09 | 2015-03-09 | 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법 |
| KR10-2015-0032426 | 2015-03-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016167581A JP2016167581A (ja) | 2016-09-15 |
| JP2016167581A5 true JP2016167581A5 (zh) | 2016-11-17 |
| JP6669522B2 JP6669522B2 (ja) | 2020-03-18 |
Family
ID=56897656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016024879A Active JP6669522B2 (ja) | 2015-03-09 | 2016-02-12 | 銀含有薄膜のエッチング液組成物およびこれを用いた表示装置用アレイ基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6669522B2 (zh) |
| KR (1) | KR20160108944A (zh) |
| CN (1) | CN105951101A (zh) |
| TW (1) | TWI618818B (zh) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102400311B1 (ko) * | 2015-08-31 | 2022-05-20 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 표시 기판 |
| KR102546803B1 (ko) * | 2016-05-23 | 2023-06-22 | 동우 화인켐 주식회사 | 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 기판 |
| KR101718460B1 (ko) * | 2016-11-14 | 2017-03-22 | 길기환 | 금 박막 식각액 조성물 |
| KR101935131B1 (ko) * | 2017-02-02 | 2019-01-03 | 동우 화인켐 주식회사 | 은 함유 박막 식각액 조성물 및 이를 이용한 표시장치용 어레이기판의 제조방법 |
| KR102400258B1 (ko) * | 2017-03-28 | 2022-05-19 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102457171B1 (ko) * | 2017-03-30 | 2022-10-19 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102421116B1 (ko) * | 2017-06-22 | 2022-07-15 | 삼성디스플레이 주식회사 | 식각액 조성물 및 식각액 조성물을 이용한 배선 형성 방법 |
| KR102457168B1 (ko) * | 2017-07-26 | 2022-10-19 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102263693B1 (ko) * | 2017-11-02 | 2021-06-10 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| KR102218937B1 (ko) * | 2017-11-16 | 2021-02-23 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| KR102368026B1 (ko) * | 2018-02-06 | 2022-02-24 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법 |
| KR102459688B1 (ko) * | 2018-02-13 | 2022-10-27 | 동우 화인켐 주식회사 | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| KR20190111724A (ko) * | 2018-03-23 | 2019-10-02 | 동우 화인켐 주식회사 | 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
| CN110359049B (zh) * | 2018-03-26 | 2021-11-23 | 东友精细化工有限公司 | 含银薄膜蚀刻液组合物、利用其制造的显示装置用阵列基板及其制造方法 |
| CN110359050B (zh) * | 2018-03-26 | 2021-08-10 | 东友精细化工有限公司 | 含银薄膜蚀刻液组合物、用其制造的用于显示装置的阵列基板及其制造方法 |
| KR102223681B1 (ko) * | 2018-05-30 | 2021-03-08 | 삼성디스플레이 주식회사 | 박막 식각액 조성물 및 이를 이용한 금속 패턴 형성 방법 |
| CN108777265A (zh) * | 2018-06-13 | 2018-11-09 | 武汉华星光电半导体显示技术有限公司 | 一种电极及其制备方法和有机电致发光器件 |
| CN110644003B (zh) * | 2018-06-26 | 2022-06-21 | 东友精细化工有限公司 | 银薄膜蚀刻液组合物及利用其的蚀刻方法和金属图案的形成方法 |
| CN110670072B (zh) * | 2018-07-03 | 2023-06-16 | 安集微电子科技（上海）股份有限公司 | 一种银蚀刻液 |
| JP2022502835A (ja) | 2018-09-12 | 2022-01-11 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | エッチング組成物 |
| KR102661845B1 (ko) * | 2018-10-11 | 2024-04-30 | 삼성디스플레이 주식회사 | 식각액 및 이를 이용한 표시 장치의 제조 방법 |
| CN109266352B (zh) * | 2018-11-08 | 2020-07-07 | 江阴江化微电子材料股份有限公司 | 一种含银复合膜的蚀刻液组合物及蚀刻方法 |
| CN111155092B (zh) * | 2018-11-08 | 2023-03-17 | 东友精细化工有限公司 | 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法 |
| JP7233217B2 (ja) | 2018-12-28 | 2023-03-06 | 関東化学株式会社 | 酸化亜鉛および銀を有する積層膜の一括エッチング液組成物 |
| KR102478164B1 (ko) * | 2020-06-05 | 2022-12-14 | 한국항공대학교산학협력단 | 은 함유 막 식각액 조성물, 이를 이용한 금속 패턴 방법, 표시장치용 어레이 기판의 제조 방법 |
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| WO2003005115A1 (en) * | 2001-07-06 | 2003-01-16 | Samsung Electronics Co., Ltd. | An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method |
| JP3974023B2 (ja) * | 2002-06-27 | 2007-09-12 | 富士通株式会社 | 半導体装置の製造方法 |
| JP4478383B2 (ja) * | 2002-11-26 | 2010-06-09 | 関東化学株式会社 | 銀を主成分とする金属薄膜のエッチング液組成物 |
| KR101337263B1 (ko) * | 2004-08-25 | 2013-12-05 | 동우 화인켐 주식회사 | 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법 |
| KR101216651B1 (ko) * | 2005-05-30 | 2012-12-28 | 주식회사 동진쎄미켐 | 에칭 조성물 |
| KR101124569B1 (ko) * | 2005-06-09 | 2012-03-15 | 삼성전자주식회사 | 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 |
| KR101299131B1 (ko) * | 2006-05-10 | 2013-08-22 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각 조성물 |
| TWI378989B (en) * | 2006-09-01 | 2012-12-11 | Taiwan Tft Lcd Ass | Etchant for patterning composite layer and method of fabricating thin film transistor using the same |
| KR101310310B1 (ko) * | 2007-03-15 | 2013-09-23 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각액 조성물 |
| KR101323458B1 (ko) * | 2007-06-15 | 2013-10-29 | 동우 화인켐 주식회사 | 은 식각액 조성물 |
| JP2009007634A (ja) * | 2007-06-28 | 2009-01-15 | Ulvac Seimaku Kk | 銀合金膜のエッチング方法およびエッチング溶液 |
| JP2010165732A (ja) * | 2009-01-13 | 2010-07-29 | Hitachi Displays Ltd | エッチング液及びこれを用いたパターン形成方法並びに液晶表示装置の製造方法 |
| KR101766488B1 (ko) * | 2011-12-15 | 2017-08-09 | 동우 화인켐 주식회사 | 금속 배선 형성을 위한 식각액 조성물 |
| JP6025595B2 (ja) * | 2013-02-15 | 2016-11-16 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
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