JP2016111131A - 周期利得活性層を有する窒化物半導体発光素子 - Google Patents

周期利得活性層を有する窒化物半導体発光素子 Download PDF

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Publication number
JP2016111131A
JP2016111131A JP2014245909A JP2014245909A JP2016111131A JP 2016111131 A JP2016111131 A JP 2016111131A JP 2014245909 A JP2014245909 A JP 2014245909A JP 2014245909 A JP2014245909 A JP 2014245909A JP 2016111131 A JP2016111131 A JP 2016111131A
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Japan
Prior art keywords
active layer
layer
nitride semiconductor
light emitting
emitting device
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JP2014245909A
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Japanese (ja)
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JP2016111131A5 (enExample
Inventor
健城 松井
Takeki Matsui
健城 松井
竹内　哲也
Tetsuya Takeuchi
哲也 竹内
素顕 岩谷
Motoaki Iwatani
素顕 岩谷
赤▲崎▼　勇
Isamu Akasaki
勇 赤▲崎▼
孝信 赤木
Takanobu Akagi
孝信 赤木
岩山　章
Akira Iwayama
章 岩山
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Stanley Electric Co Ltd
Meijo University
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Stanley Electric Co Ltd
Meijo University
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Priority to JP2014245909A priority Critical patent/JP2016111131A/ja
Priority to US14/955,409 priority patent/US9847449B2/en
Publication of JP2016111131A publication Critical patent/JP2016111131A/ja
Publication of JP2016111131A5 publication Critical patent/JP2016111131A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2014245909A 2014-12-04 2014-12-04 周期利得活性層を有する窒化物半導体発光素子 Pending JP2016111131A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014245909A JP2016111131A (ja) 2014-12-04 2014-12-04 周期利得活性層を有する窒化物半導体発光素子
US14/955,409 US9847449B2 (en) 2014-12-04 2015-12-01 Nitride semiconductor light-emitting device with periodic gain active layers

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JP2014245909A JP2016111131A (ja) 2014-12-04 2014-12-04 周期利得活性層を有する窒化物半導体発光素子

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JP2016111131A true JP2016111131A (ja) 2016-06-20
JP2016111131A5 JP2016111131A5 (enExample) 2017-11-16

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US (1) US9847449B2 (enExample)
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
WO2018180450A1 (ja) * 2017-03-27 2018-10-04 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
JP2018186213A (ja) * 2017-04-27 2018-11-22 スタンレー電気株式会社 垂直共振器型発光素子
JP2021034632A (ja) * 2019-08-28 2021-03-01 学校法人 名城大学 窒化物半導体多層膜反射鏡の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11233173B2 (en) 2018-12-17 2022-01-25 Industrial Technology Research Institute Ultraviolet c light-emitting diode
TWI685129B (zh) * 2018-12-17 2020-02-11 財團法人工業技術研究院 紫外光c發光二極體
US20220216188A1 (en) * 2021-01-06 2022-07-07 Seoul Viosys Co., Ltd. Light emitting device and light emitting module having the same

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JP2001053336A (ja) * 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US20030231683A1 (en) * 2002-05-30 2003-12-18 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
JP2004260111A (ja) * 2003-02-27 2004-09-16 Sharp Corp 半導体発光素子およびその半導体発光素子を用いた半導体発光装置
US20060006375A1 (en) * 2003-04-14 2006-01-12 Chen Ou Light Mixing LED
JP2008227469A (ja) * 2007-02-14 2008-09-25 Canon Inc 赤色面発光レーザ素子、画像形成装置、及び画像表示装置
JP2011151275A (ja) * 2010-01-22 2011-08-04 Nec Corp 窒化物半導体発光素子および電子装置
JP2012038882A (ja) * 2010-08-06 2012-02-23 Canon Inc 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ
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US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US20060165143A1 (en) * 2005-01-24 2006-07-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor laser device and manufacturing method thereof
JP4954536B2 (ja) * 2005-11-29 2012-06-20 ローム株式会社 窒化物半導体発光素子
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JP2001053336A (ja) * 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US20030231683A1 (en) * 2002-05-30 2003-12-18 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
JP2004260111A (ja) * 2003-02-27 2004-09-16 Sharp Corp 半導体発光素子およびその半導体発光素子を用いた半導体発光装置
US20060006375A1 (en) * 2003-04-14 2006-01-12 Chen Ou Light Mixing LED
JP2008227469A (ja) * 2007-02-14 2008-09-25 Canon Inc 赤色面発光レーザ素子、画像形成装置、及び画像表示装置
JP2011151275A (ja) * 2010-01-22 2011-08-04 Nec Corp 窒化物半導体発光素子および電子装置
JP2012038882A (ja) * 2010-08-06 2012-02-23 Canon Inc 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ
JP2014045015A (ja) * 2012-08-24 2014-03-13 Meijo University 複数の活性層を有する窒化物半導体素子、窒化物半導体発光素子、窒化物半導体受光素子、及び、窒化物半導体素子の製造方法
JP2014112654A (ja) * 2012-11-02 2014-06-19 Canon Inc 窒化物半導体面発光レーザ及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
WO2018180450A1 (ja) * 2017-03-27 2018-10-04 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
JP2018163991A (ja) * 2017-03-27 2018-10-18 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
US11146040B2 (en) 2017-03-27 2021-10-12 Meijo University Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element
JP2018186213A (ja) * 2017-04-27 2018-11-22 スタンレー電気株式会社 垂直共振器型発光素子
JP2021034632A (ja) * 2019-08-28 2021-03-01 学校法人 名城大学 窒化物半導体多層膜反射鏡の製造方法
JP7352941B2 (ja) 2019-08-28 2023-09-29 学校法人 名城大学 窒化物半導体多層膜反射鏡の製造方法

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US20160163919A1 (en) 2016-06-09

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