JP2016111131A5 - - Google Patents

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Publication number
JP2016111131A5
JP2016111131A5 JP2014245909A JP2014245909A JP2016111131A5 JP 2016111131 A5 JP2016111131 A5 JP 2016111131A5 JP 2014245909 A JP2014245909 A JP 2014245909A JP 2014245909 A JP2014245909 A JP 2014245909A JP 2016111131 A5 JP2016111131 A5 JP 2016111131A5
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JP
Japan
Prior art keywords
active layer
light emitting
emitting device
semiconductor light
nitride semiconductor
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Pending
Application number
JP2014245909A
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English (en)
Japanese (ja)
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JP2016111131A (ja
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Priority to JP2014245909A priority Critical patent/JP2016111131A/ja
Priority claimed from JP2014245909A external-priority patent/JP2016111131A/ja
Priority to US14/955,409 priority patent/US9847449B2/en
Publication of JP2016111131A publication Critical patent/JP2016111131A/ja
Publication of JP2016111131A5 publication Critical patent/JP2016111131A5/ja
Pending legal-status Critical Current

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JP2014245909A 2014-12-04 2014-12-04 周期利得活性層を有する窒化物半導体発光素子 Pending JP2016111131A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014245909A JP2016111131A (ja) 2014-12-04 2014-12-04 周期利得活性層を有する窒化物半導体発光素子
US14/955,409 US9847449B2 (en) 2014-12-04 2015-12-01 Nitride semiconductor light-emitting device with periodic gain active layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014245909A JP2016111131A (ja) 2014-12-04 2014-12-04 周期利得活性層を有する窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2016111131A JP2016111131A (ja) 2016-06-20
JP2016111131A5 true JP2016111131A5 (enExample) 2017-11-16

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Family Applications (1)

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JP2014245909A Pending JP2016111131A (ja) 2014-12-04 2014-12-04 周期利得活性層を有する窒化物半導体発光素子

Country Status (2)

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US (1) US9847449B2 (enExample)
JP (1) JP2016111131A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846730B2 (ja) * 2016-07-22 2021-03-24 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
JP6932345B2 (ja) 2017-03-27 2021-09-08 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
JP2018186213A (ja) * 2017-04-27 2018-11-22 スタンレー電気株式会社 垂直共振器型発光素子
US11233173B2 (en) 2018-12-17 2022-01-25 Industrial Technology Research Institute Ultraviolet c light-emitting diode
TWI685129B (zh) * 2018-12-17 2020-02-11 財團法人工業技術研究院 紫外光c發光二極體
JP7352941B2 (ja) * 2019-08-28 2023-09-29 学校法人 名城大学 窒化物半導体多層膜反射鏡の製造方法
US20220216188A1 (en) * 2021-01-06 2022-07-07 Seoul Viosys Co., Ltd. Light emitting device and light emitting module having the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1279394C (en) * 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
JP2001053336A (ja) * 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US6967981B2 (en) * 2002-05-30 2005-11-22 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
JP2004260111A (ja) * 2003-02-27 2004-09-16 Sharp Corp 半導体発光素子およびその半導体発光素子を用いた半導体発光装置
US20060006375A1 (en) * 2003-04-14 2006-01-12 Chen Ou Light Mixing LED
US20060165143A1 (en) * 2005-01-24 2006-07-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor laser device and manufacturing method thereof
JP4954536B2 (ja) * 2005-11-29 2012-06-20 ローム株式会社 窒化物半導体発光素子
JP4343986B2 (ja) * 2007-02-14 2009-10-14 キヤノン株式会社 赤色面発光レーザ素子、画像形成装置、及び画像表示装置
US7809040B2 (en) * 2007-02-14 2010-10-05 Canon Kabushiki Kaisha Red surface emitting laser element, image forming device, and image display apparatus
JP5446044B2 (ja) * 2010-01-22 2014-03-19 日本電気株式会社 窒化物半導体発光素子および電子装置
JP5735765B2 (ja) * 2010-08-06 2015-06-17 キヤノン株式会社 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ
JP6058946B2 (ja) * 2012-08-24 2017-01-11 学校法人 名城大学 複数の活性層を有する窒化物半導体素子、窒化物半導体発光素子、窒化物半導体受光素子、及び、窒化物半導体素子の製造方法
JP6271934B2 (ja) * 2012-11-02 2018-01-31 キヤノン株式会社 窒化物半導体面発光レーザ及びその製造方法

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