JP2016082233A - マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法 - Google Patents

マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法 Download PDF

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Publication number
JP2016082233A
JP2016082233A JP2015200658A JP2015200658A JP2016082233A JP 2016082233 A JP2016082233 A JP 2016082233A JP 2015200658 A JP2015200658 A JP 2015200658A JP 2015200658 A JP2015200658 A JP 2015200658A JP 2016082233 A JP2016082233 A JP 2016082233A
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Japan
Prior art keywords
output variable
point
collected
pulse
multimode
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Japanese (ja)
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JP2016082233A5 (enExample
Inventor
ヤシン・カボウジ
Kabouzi Yassine
ホルヘ・ルケ
Luque Jorge
サード アンドリュー・ディー．・ベイリー・ザ
D Bailey Andrew Iii
サード アンドリュー・ディー．・ベイリー・ザ
メフメト・デルヤ・テティカー
Derya Tetiker Mehmet
ラムクマル・スバラマニアン
Subramanian Ramkumar
葉子 山口
Yoko Yamaguchi
葉子 山口
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Lam Research Corp
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Lam Research Corp
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Publication of JP2016082233A publication Critical patent/JP2016082233A/ja
Publication of JP2016082233A5 publication Critical patent/JP2016082233A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2015200658A 2014-10-20 2015-10-09 マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法 Pending JP2016082233A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462066330P 2014-10-20 2014-10-20
US62/066,330 2014-10-20
US14/523,770 US9640371B2 (en) 2014-10-20 2014-10-24 System and method for detecting a process point in multi-mode pulse processes
US14/523,770 2014-10-24

Publications (2)

Publication Number Publication Date
JP2016082233A true JP2016082233A (ja) 2016-05-16
JP2016082233A5 JP2016082233A5 (enExample) 2018-12-06

Family

ID=54337130

Family Applications (1)

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JP2015200658A Pending JP2016082233A (ja) 2014-10-20 2015-10-09 マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法

Country Status (7)

Country Link
US (2) US9640371B2 (enExample)
EP (1) EP3012855B1 (enExample)
JP (1) JP2016082233A (enExample)
KR (1) KR102623688B1 (enExample)
CN (2) CN105679688B (enExample)
SG (1) SG10201508634SA (enExample)
TW (1) TWI679671B (enExample)

Cited By (4)

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JP2021150379A (ja) * 2020-03-17 2021-09-27 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
JP2022539991A (ja) * 2019-06-27 2022-09-14 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
US12183589B2 (en) 2018-01-30 2024-12-31 Lam Research Corporation Tin oxide mandrels in patterning
US12417916B2 (en) 2017-02-17 2025-09-16 Lam Research Corporation Tin oxide films in semiconductor device manufacturing

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US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
JP6356615B2 (ja) * 2015-02-06 2018-07-11 東芝メモリ株式会社 半導体製造装置および半導体製造方法
US10522429B2 (en) * 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
US11209478B2 (en) * 2018-04-03 2021-12-28 Applied Materials, Inc. Pulse system verification
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
US10748823B2 (en) 2018-09-27 2020-08-18 International Business Machines Corporation Embedded etch rate reference layer for enhanced etch time precision
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
TW202309969A (zh) * 2021-05-06 2023-03-01 日商東京威力科創股份有限公司 電漿處理裝置及終點檢測方法
GB202109722D0 (en) * 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
KR20250065369A (ko) * 2022-09-08 2025-05-12 램 리써치 코포레이션 반도체 장비의 상태의 멀티-센서 결정
US20240339309A1 (en) * 2023-04-10 2024-10-10 Tokyo Electron Limited Advanced OES Characterization

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JP2001044171A (ja) * 1999-07-28 2001-02-16 Matsushita Electric Ind Co Ltd エッチング終点検出方法および装置
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JP2007501532A (ja) * 2003-05-09 2007-01-25 ウナクシス ユーエスエイ、インコーポレイテッド 時分割多重プロセスにおける包絡線フォロア終点検出
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JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
JP2001044171A (ja) * 1999-07-28 2001-02-16 Matsushita Electric Ind Co Ltd エッチング終点検出方法および装置
JP2004134540A (ja) * 2002-10-10 2004-04-30 Dainippon Screen Mfg Co Ltd ドライエッチング装置および終点検出方法
JP2007501532A (ja) * 2003-05-09 2007-01-25 ウナクシス ユーエスエイ、インコーポレイテッド 時分割多重プロセスにおける包絡線フォロア終点検出
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12417916B2 (en) 2017-02-17 2025-09-16 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US12437995B2 (en) 2017-02-17 2025-10-07 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US12183589B2 (en) 2018-01-30 2024-12-31 Lam Research Corporation Tin oxide mandrels in patterning
JP2022539991A (ja) * 2019-06-27 2022-09-14 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP7320085B2 (ja) 2019-06-27 2023-08-02 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP2023134781A (ja) * 2019-06-27 2023-09-27 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP7549097B2 (ja) 2019-06-27 2024-09-10 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
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JP2021150379A (ja) * 2020-03-17 2021-09-27 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
JP7454971B2 (ja) 2020-03-17 2024-03-25 東京エレクトロン株式会社 検出方法及びプラズマ処理装置

Also Published As

Publication number Publication date
CN105679688A (zh) 2016-06-15
EP3012855B1 (en) 2018-07-18
US20160111261A1 (en) 2016-04-21
US10242849B2 (en) 2019-03-26
US20170207070A1 (en) 2017-07-20
KR20160046309A (ko) 2016-04-28
EP3012855A1 (en) 2016-04-27
TWI679671B (zh) 2019-12-11
CN110246743A (zh) 2019-09-17
CN110246743B (zh) 2022-12-20
CN105679688B (zh) 2019-04-16
US9640371B2 (en) 2017-05-02
KR102623688B1 (ko) 2024-01-10
SG10201508634SA (en) 2016-05-30
TW201630028A (zh) 2016-08-16

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