JP2016072271A - 撮像装置 - Google Patents
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Abstract
【解決手段】 第1画素電極と、第1画素電極に隣り合う第2画素電極と、第1画素電極および第2画素電極を連続的に覆う光電変換膜と、を備える撮像装置であって、第1画素電極と光電変換膜との間および第2画素電極と光電変換膜との間には絶縁膜が設けられており、第1画素電極と第2画素電極の間に対応する位置に、光電変換膜の第1画素電極および第2画素電極が配された側の面に接する中間電極が設けられている。
【選択図】 図2
Description
図2を用いて第1実施形態に係る撮像装置1000を説明する。図2は、図1(b)のA―A’線における画素領域1の断面および、周辺領域2の断面を示している。図2に示すように、p型ウェルが形成された半導体基板10内には、STI(Shallow Trench Isoration)などによる素子分離部9が形成されている。また、半導体基板10には、例えば画素回路110の各トランジスタのソースまたはドレインとして機能する不純物領域7や、制御回路6の接続部として機能する不純物領域81、82が設けられている。半導体基板10の上には、ゲート絶縁膜(不図示)を介して、ゲート18および他の不図示のゲート14、19を成すゲート電極層が設けられている。これらの構造は第1画素101、第2画素102、第3画素103のそれぞれの画素回路111、112、113に共通である。
次に、図5(a)〜(c)を用いて第2実施形態に係る撮像装置の製造方法を説明する。第3実施形態は、中間電極43および絶縁膜44の形成方法が第1実施形態と異なる。図5(a)に示すように配線構造体120の上に導電膜を形成して、導電膜をパターニングすることで、画素電極40および中間電極43を同時に形成する。図5(b)に示すように画素電極40および中間電極43を覆うように絶縁膜を堆積させる。
次に、図6(a)〜(e)を用いて第3実施形態に係る撮像装置の製造方法を説明する。第3実施形態は、画素電極40の形成方法が第1実施形態と主に異なる。図6(a)に示すように、ダマシン法を用いて画素電極40を絶縁部材20に埋め込んで形成する。そのため、画素電極40の上面と絶縁部材20の上面とが連続した平坦面が形成される。次に、図6(b)に示すように、画素電極40および絶縁部材20を覆う様に絶縁膜44を形成する。ここで、絶縁膜44を第1実施形態と同様にパターニングすることもできるが、本例では画素境界部に絶縁膜44を残している。次に、絶縁膜44の上に導電膜を形成し、この導電膜をパターニングすることにより、中間電極43を形成する。画素電極40は絶縁部材20と絶縁膜44との間に配されており、絶縁膜44は、絶縁部材20と中間電極43との間に延在している。この中間電極43は第1実施形態や第2実施形態とは異なり、画素電極40間ではなく、画素電極40間の上方に形成される。このような形態によれば、距離D1、D2を大きくしつつ、距離D0を小さくできるため、感度の向上と残像の防止を両立することができる。
402 第2画素電極
50 光電変換膜
43 中間電極
44 絶縁膜
Claims (10)
- 第1画素電極と、前記第1画素電極に隣り合う第2画素電極と、前記第1画素電極および前記第2画素電極を連続的に覆う光電変換膜と、を備える撮像装置であって、
前記第1画素電極と前記光電変換膜との間および前記第2画素電極と前記光電変換膜との間には絶縁膜が設けられており、
前記第1画素電極と前記第2画素電極の間に対応する位置に、前記光電変換膜の前記第1画素電極および前記第2画素電極が配された側の面に接する中間電極が設けられていることを特徴とする撮像装置。 - 前記中間電極と前記第1画素電極の間の電位差を、前記第1画素電極と前記第2画素電極の間の電位差よりも大きくする制御回路を備える、請求項1に記載の撮像装置。
- 前記光電変換膜を介して前記第1画素電極および前記第2画素電極に対向する対向電極が設けられている、請求項1または2に記載の撮像装置。
- 前記中間電極と前記第1画素電極の間の電位差を、前記中間電極と前記対向電極の間の電位差よりも大きくする制御回路を備える、請求項3に記載の撮像装置。
- 前記対向電極と前記中間電極との距離が、前記対向電極と前記第1画素電極との距離および前記対向電極と前記第2画素電極との距離よりも小さい、請求項3または4に記載の撮像装置。
- 外部回路と電気的に接続するための接続電極を備え、前記中間電極は前記接続電極と同じ材料で構成されている、請求項1乃至5のいずれか1項に記載の撮像装置。
- 前記中間電極は前記第1画素電極の材料および前記第2画素電極の材料とは異なる材料で構成されている、請求項1乃至6のいずれか1項に記載の撮像装置。
- 前記中間電極が前記絶縁膜から離れて設けられている、請求項1乃至7のいずれか1項に記載の撮像装置。
- 前記第1画素電極は絶縁部材と前記絶縁膜との間に配されており、前記絶縁膜は、前記絶縁部材と前記中間電極との間に延在している、請求項1乃至8のいずれか1項に記載の撮像装置。
- 前記中間電極は、グリッド状あるいはストライプ状の形状を有する、請求項1乃至9のいずれか1項に記載の撮像装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2014196672A JP6555867B2 (ja) | 2014-09-26 | 2014-09-26 | 撮像装置 |
US14/863,254 US9647018B2 (en) | 2014-09-26 | 2015-09-23 | Imaging device including an intermediate electrode between first and second pixel electrodes and in contact with a photoelectric conversion film |
US15/480,251 US10269849B2 (en) | 2014-09-26 | 2017-04-05 | Imaging device including photoelectric conversion film for continuously covering electrodes having a distance between a counter electrode and a pixel electrode or an intermediate electrode is smaller than a distance between the counter electrode and an insulating member |
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JP7005331B2 (ja) * | 2017-12-21 | 2022-01-21 | キヤノン株式会社 | 撮像装置及び撮像システム |
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US9647018B2 (en) | 2017-05-09 |
US10269849B2 (en) | 2019-04-23 |
JP6555867B2 (ja) | 2019-08-07 |
US20170207260A1 (en) | 2017-07-20 |
US20160093650A1 (en) | 2016-03-31 |
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