JP2016058538A - 固体撮像装置およびカメラ - Google Patents

固体撮像装置およびカメラ Download PDF

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Publication number
JP2016058538A
JP2016058538A JP2014183495A JP2014183495A JP2016058538A JP 2016058538 A JP2016058538 A JP 2016058538A JP 2014183495 A JP2014183495 A JP 2014183495A JP 2014183495 A JP2014183495 A JP 2014183495A JP 2016058538 A JP2016058538 A JP 2016058538A
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Japan
Prior art keywords
microlens
pixel
imaging device
solid
state imaging
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Pending
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JP2014183495A
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English (en)
Japanese (ja)
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JP2016058538A5 (enExample
Inventor
一成 川端
Kazunari Kawabata
一成 川端
太朗 加藤
Taro Kato
太朗 加藤
関根　康弘
Yasuhiro Sekine
康弘 関根
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014183495A priority Critical patent/JP2016058538A/ja
Priority to US14/836,124 priority patent/US9768217B2/en
Publication of JP2016058538A publication Critical patent/JP2016058538A/ja
Publication of JP2016058538A5 publication Critical patent/JP2016058538A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014183495A 2014-09-09 2014-09-09 固体撮像装置およびカメラ Pending JP2016058538A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014183495A JP2016058538A (ja) 2014-09-09 2014-09-09 固体撮像装置およびカメラ
US14/836,124 US9768217B2 (en) 2014-09-09 2015-08-26 Solid-state image sensing device and camera with asymetric microlenses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014183495A JP2016058538A (ja) 2014-09-09 2014-09-09 固体撮像装置およびカメラ

Publications (2)

Publication Number Publication Date
JP2016058538A true JP2016058538A (ja) 2016-04-21
JP2016058538A5 JP2016058538A5 (enExample) 2017-10-19

Family

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Family Applications (1)

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JP2014183495A Pending JP2016058538A (ja) 2014-09-09 2014-09-09 固体撮像装置およびカメラ

Country Status (2)

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US (1) US9768217B2 (enExample)
JP (1) JP2016058538A (enExample)

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JP6506614B2 (ja) 2015-05-14 2019-04-24 キヤノン株式会社 固体撮像装置およびカメラ
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6541523B2 (ja) 2015-09-11 2019-07-10 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の制御方法
JP6570384B2 (ja) 2015-09-11 2019-09-04 キヤノン株式会社 撮像装置及び撮像システム
US9686457B2 (en) * 2015-09-11 2017-06-20 Semiconductor Components Industries, Llc High efficiency image sensor pixels with deep trench isolation structures and embedded reflectors
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP6600246B2 (ja) * 2015-12-17 2019-10-30 キヤノン株式会社 撮像装置及びカメラ
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
JP6776011B2 (ja) 2016-06-10 2020-10-28 キヤノン株式会社 撮像装置及び撮像システム
JP6688165B2 (ja) 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6727938B2 (ja) 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
US10319765B2 (en) 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
US10015389B2 (en) * 2016-09-22 2018-07-03 Omnivision Technologies, Inc. Image sensor with asymmetric-microlens phase-detection auto-focus (PDAF) detectors, associated PDAF imaging system, and associated method
KR102372736B1 (ko) 2017-03-06 2022-03-11 에스케이하이닉스 주식회사 위상차 검출 픽셀을 구비하는 이미지 센서
JP2019041352A (ja) 2017-08-29 2019-03-14 キヤノン株式会社 撮像装置及び撮像システム
KR102523851B1 (ko) * 2018-07-31 2023-04-21 에스케이하이닉스 주식회사 더미 픽셀들을 포함하는 이미지 센싱 장치
WO2020193117A1 (en) * 2019-03-26 2020-10-01 Lumileds Holding B.V. Lighting device with transparent stabilizer element
KR102662032B1 (ko) * 2019-06-19 2024-05-03 삼성전자주식회사 이미지 센서 및 이미지 센서를 포함하는 전자 장치
CN114008782A (zh) 2019-09-30 2022-02-01 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114041208A (zh) 2019-09-30 2022-02-11 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
US11271024B2 (en) * 2019-12-09 2022-03-08 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same
US12376395B2 (en) * 2021-03-18 2025-07-29 Visera Technologies Company Limited Optical devices

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JP2005302884A (ja) * 2004-04-08 2005-10-27 Canon Inc 固体撮像素子、設計支援方法及び装置
JP2006032713A (ja) * 2004-07-16 2006-02-02 Canon Inc 固体撮像素子
JP2006040948A (ja) * 2004-07-22 2006-02-09 Canon Inc 撮像装置
JP2006049721A (ja) * 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
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JP2009004814A (ja) 2008-09-24 2009-01-08 Kyocera Corp 固体撮像装置
JP5539014B2 (ja) 2009-05-21 2014-07-02 キヤノン株式会社 固体撮像素子
JP2012038938A (ja) 2010-08-06 2012-02-23 Canon Inc 固体撮像素子およびカメラ
JP5893302B2 (ja) 2011-09-01 2016-03-23 キヤノン株式会社 固体撮像装置
JP5956866B2 (ja) 2011-09-01 2016-07-27 キヤノン株式会社 固体撮像装置
JP6071183B2 (ja) 2011-10-20 2017-02-01 キヤノン株式会社 固体撮像装置およびカメラ
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JP6200188B2 (ja) 2013-04-08 2017-09-20 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP5791664B2 (ja) * 2013-06-28 2015-10-07 キヤノン株式会社 光学素子アレイ、及び固体撮像装置
JP6166640B2 (ja) 2013-10-22 2017-07-19 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
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JP2005302884A (ja) * 2004-04-08 2005-10-27 Canon Inc 固体撮像素子、設計支援方法及び装置
JP2006032713A (ja) * 2004-07-16 2006-02-02 Canon Inc 固体撮像素子
JP2006040948A (ja) * 2004-07-22 2006-02-09 Canon Inc 撮像装置
JP2006049721A (ja) * 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2006215547A (ja) * 2005-02-03 2006-08-17 Samsung Electronics Co Ltd マイクロレンズの製造方法、マイクロレンズアレイの製造方法、及びイメージセンサの製造方法
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JP2007335723A (ja) * 2006-06-16 2007-12-27 Fujifilm Corp 固体撮像素子用マイクロレンズ及びその製造方法
JP2009099817A (ja) * 2007-10-18 2009-05-07 Nikon Corp 固体撮像素子
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