JP2016009795A - 窒化物半導体層、窒化物半導体装置及び窒化物半導体層の製造方法 - Google Patents
窒化物半導体層、窒化物半導体装置及び窒化物半導体層の製造方法 Download PDFInfo
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- JP2016009795A JP2016009795A JP2014130358A JP2014130358A JP2016009795A JP 2016009795 A JP2016009795 A JP 2016009795A JP 2014130358 A JP2014130358 A JP 2014130358A JP 2014130358 A JP2014130358 A JP 2014130358A JP 2016009795 A JP2016009795 A JP 2016009795A
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Abstract
【解決手段】実施形態によれば、第1面に沿って広がる窒化物半導体層が提供される。前記窒化物半導体層は、第1領域と、第2領域と、を含む。前記第1面に対して平行な第1方向における前記第1領域の長さは、前記第1面に対して平行で前記第1方向に対して垂直な第2方向における前記第1領域の長さよりも長い。前記第2領域は、前記第2方向において前記第1領域と並ぶ。前記第1方向における前記第2領域の長さは、前記第2方向における前記第2領域の長さよりも長い。前記第1領域及び前記第2領域のc軸は、前記第2方向に対して傾斜する。前記c軸は、前記第1面に対して垂直な第3方向と交差する。
【選択図】図1
Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
本実施形態は、窒化物半導体装置に係る。実施形態に係る窒化物半導体装置は、半導体発光装置、半導体受光装置、及び、電子装置などを含む。半導体発光装置は、例えば、発光ダイオード(LED)及びレーザダイオード(LD)などを含む。半導体受光装置は、フォトダイオード(PD)などを含む。電子装置は、例えば、高電子移動度トランジスタ(HEMT)、ヘテロ接合バイポーラトランジスタ(HBT)、電界効果トランジスタ(FET)及びショットキーバリアダイオード(SBD)などを含む。
図1(a)に示すように、実施形態に係る窒化物半導体装置110は、基板40と、窒化物半導体層15と、を含む。
窒化物半導体層15のc軸16(c軸16a及びc軸16bのそれぞれ)は、第2方向D2に対して傾斜している。c軸16(c軸16a及びc軸16bのそれぞれ)は、第2方向D2に対して平行ではなく、垂直でもない。
基板40は、主面40aを有する。主面40aは、基板40の巨視的な主面である。主面40aは、第1面15fに対して、実質的に平行である。基板40は、主面40aに沿って広がる。
熱膨張係数の異方性については、後述する。
図2に示した例では、窒化物半導体層15は、例えば、下地層50と、機能層10と、を含む。この例では、窒化物半導体層15は、バッファ層60をさらに含む。
図3(a)に示すように、基板40を用意する。例えば、基板40には、例えば、(113)面のシリコン基板が用いられる。シリコン基板のオリエンテーションフラットの方位は、例えば、<−110>方向である。シリコン基板の上に、マスク層64となる酸化シリコン膜64fが形成されている。酸化シリコン膜64fは、例えば、熱酸化膜である。酸化シリコン膜64fの厚さは、例えば、約100ナノメートル(nm)である。酸化シリコン膜64fの上に、所定の形状のレジスト膜65を形成する。レジスト膜65の形状は、例えば、ストライプ状である。ストライプの延在方向を、基板40の結晶方位に対して所定の角度で傾斜させる。ストライプの延在方向は、シリコンの<21−1>方向から、<110>方向に、所定の角度で傾斜する。傾斜の角度は、5度以上85度以下である。
この実験においては、基板40に形成される凹部45の延在方向(第1方向D1)を変更する。すなわち、レジスト膜65のストライプの延在方向を変更する。レジスト膜65のストライプの延在方向と、シリコンの<21−1>方向と、の角度を変更する。第1試料においては、レジスト膜65のストライプの延在方向は、シリコンの<21−1>方向に対して平行である(傾斜角度は0度)。第2試料においては、レジスト膜65のストライプの延在方向は、シリコンの<21−1>方向から、<110>方向に13度傾斜する(傾斜角度は13度)。第3試料においては、レジスト膜65のストライプの延在方向は、シリコンの<21−1>方向から、<110>方向に18度傾斜する(傾斜角度は18度)。
図4(a)〜図4(c)のそれぞれは、上記の第1試料SP10、第2試料SP20及び第3試料SP30のそれぞれに対応する。これらの電子顕微鏡写真は、基板40の上面40u(主面40a)に対して垂直な方向(第3方向D3)から観察したSEM像である。これらの例では、GaN層の成長時間が30分であり、GaN層の成長の途中の段階である。すなわち、凹部45の複数の側面のそれぞれから成長した複数の結晶が合体する前の状態である。
図5(a)及び図5(b)は、以下の第4試料SP11及び第5試料SP31のそれぞれに対応する。これらの試料においては、レジスト膜65の幅は、約2.5μmである。レジスト膜65の開口部の幅は、約2.5μmである。ストライプの周期は、約5μmである。すなわち、第4試料SP11及び第5試料SP31においては、レジスト膜65のストライプの周期は、第1〜第3試料SP10〜SP30に比べて短い。
図6(a)は、基板40の凹部45の延在方向(第1方向D1)を変えたときの、シリコン基板とGaN層との熱膨張係数の差を例示している。シリコン基板の主面は、(113)面である。GaN層の主面は、(11−22)面である。横軸は、第1方向D1と、シリコンの<21−1>方向と、の間の角度(傾斜角α)である。縦軸は、熱膨張係数差ΔCである。熱膨張係数差ΔCは、基板40の上面40u(主面40a)に対して平行な2つの方向で異なる。差ΔC1は、凹部45の延在方向(第1方向D1)における熱膨張係数の差である。差ΔC2は、凹部45の延在方向に対して垂直な方向(第2方向D2)における熱膨張係数の差である。傾斜角αは、方向16pと第2方向D2との間の角度に対応する。
図7(d)は、上記の第3試料SP30の基板40を例示する模式的平面図である。図7(a)〜図7(c)は、図7(d)のA1−A2線断面の電子顕微鏡写真像である。
これらの図は、第3試料SP30の基板40を用いて、窒化物半導体層15(GaN層51)を成長させた試料の電子顕微鏡写真像である。図8(b)〜図8(d)は、図8(a)に示す部分p1、部分p2及び部分p3のそれぞれの拡大像である。
凹部45の深さが深くなりすぎると、原料ガスが侵入(気相拡散)せず、底面46atの上にAlN層が成長しにくくなる。この場合には、凹部45の底面46atからメルトバックエッチングが生じやすくなる。そのため、凹部45の深さは、AlN層が成長する深さであることが好ましい。凹部45の深さは、0.3μm以上3μm以下であることが好ましい。
図9(b)、図9(c)、図9(e)、図9(g)、図9(i)の例において、図中の点線は側面46asを示している。これら例においては、側面46asは、シリコンの{111}面に実質的に対応する。
図9(a)及び図9(b)の例では、基板40の上面40uは、シリコンの(111)面である。この時、窒化物半導体層15(例えばGaN層51)のc軸16は、基板40の上面40uに対して実質的に垂直である。窒化物半導体層15のc面は、上面40uに対して実質的に平行である。
例えば、基板40として、r面((1−102)面)のサファイア基板を用いても良い。この場合には、窒化物半導体層15の(11−22)面が、基板40の上面40uに対して平行になる。このとき、窒化物半導体層15のc軸16と、基板40の上面40uに対して垂直な軸と、の間の角度は、約58度である。c軸16と第1面15fとの間の角度θ1は、約32度である。
これらの例においては、窒化物半導体装置は、発光装置(例えばLED)である。
図10(a)に示す窒化物半導体装置121においては、基板40の上に下地層50(例えばGaN層)が設けられ、下地層50の上に、機能層10が設けられる。機能層10は、第1半導体層11、第2半導体層12及び活性層13に加えて、低不純物濃度層11iをさらに含む。低不純物濃度層11iは、第1半導体層11と下地層50との間に配置される。低不純物濃度層11iにおける不純物濃度は、第1半導体層11における不純物濃度よりも低い。低不純物濃度層11iには、例えば、アンドープのGaNが用いられる。
この例の窒化物半導体装置131は、HEMT(High Electron Mobility Transistor)装置である。窒化物半導体装置131においては、機能層10は、第1層81と、第2層82と、を含む。窒化物半導体装置131には、ゲート電極85と、ソース電極83と、ドレイン電極84と、が設けられる。
第2層82には、例えばアンドープのAlαGa1−αN(0≦α≦1)が用いられる。第1層81には、例えばアンドープまたはn形のAlβGa1−βN(0≦β≦1、α<β)が用いられる。例えば、第2層82にはアンドープのGaN層が用いられ、第1層81にはアンドープまたはn形のAlGaN層が用いられる。
図12には、電子線回折法などを用いて測定されたc軸16を示している。図12は、第1方向D1の方向に観察した断面TEM像である。
本実施形態は、窒化物半導体層の製造方法に係る。
図13は、第2の実施形態に係る窒化物半導体層の製造方法を例示するフローチャート図である。
本製造方法においては、基板40を用意する(ステップS110)。この基板40は、主面40aを有する。主面40aは、上面40uと、複数の斜面41と、を含む。複数の斜面41は、上面40uに対して傾斜する。上面40uに対して平行な第1方向D1における複数の斜面41のそれぞれの長さは、上面40uに対して平行で第1方向D1に対して垂直な第2方向D2における複数の斜面41のそれぞれの長さよりも長い。複数の斜面41は、第2方向D2に並ぶ。
本製造方法によれば、反りが抑制でき、クラックCRが抑制できる。
Claims (20)
- 第1面に沿って広がる窒化物半導体層であって、
第1領域であって、前記第1面に対して平行な第1方向における前記第1領域の長さは、前記第1面に対して平行で前記第1方向に対して垂直な第2方向における前記第1領域の長さよりも長い前記第1領域と、
前記第2方向において前記第1領域と並ぶ第2領域であって、前記第1方向における前記第2領域の長さは、前記第2方向における前記第2領域の長さよりも長い前記第2領域と、
を備え、
前記第1領域及び前記第2領域のc軸は、前記第2方向に対して傾斜し、
前記c軸は、前記第1面に対して垂直な第3方向と交差する窒化物半導体層。 - 前記c軸と、前記第1面と、の間の角度は、0度以上85度以下である請求項1記載の窒化物半導体層。
- 前記c軸を前記第1面に投影した方向と、前記第2方向と、の間の角度は、5度以上85度以下である請求項1または2に記載の窒化物半導体層。
- 前記第1面は、(11−22)面、(10−11)面、(11−20)面、及び、(10−10)面のいずれかに対して平行である請求項1〜3のいずれか1つに記載の窒化物半導体層。
- 前記窒化物半導体層は、
第1導電形の第1半導体層と、
前記第3方向において前記第1半導体層と離間し第2導電形の第2半導体層と、
前記第1半導体層と前記第2半導体層との間に設けられた活性層と、
を含む請求項1〜4のいずれか1つに記載の窒化物半導体層。 - 上面と、前記上面に対して傾斜する複数の斜面と、を含む主面を有する基板であって、前記上面に対して平行な第1方向における前記複数の斜面のそれぞれの長さは、前記上面に対して平行で前記第1方向に対して垂直な第2方向における前記複数の斜面のそれぞれの長さよりも長く、前記複数の斜面は前記第2方向に並ぶ、前記基板と、
前記複数の斜面から成長された窒化物半導体層を、
を備え、
前記窒化物半導体層のc軸は、前記第2方向に対して傾斜し、
前記c軸は、前記上面に対して垂直な第3方向と交差する窒化物半導体装置。 - 前記基板の少なくとも一部が除去されている請求項6記載の窒化物半導体装置。
- 窒化物半導体層を備え、
上面と、前記上面に対して傾斜する複数の斜面と、を含む主面を有する基板であって、前記上面に対して平行な第1方向における前記複数の斜面のそれぞれの長さは、前記上面に対して平行で前記第1方向に対して垂直な第2方向における前記複数の斜面のそれぞれの長さよりも長く、前記複数の斜面は前記第2方向に並ぶ、前記基板の前記複数の斜面から、前記窒化物半導体層は成長され、
前記窒化物半導体層のc軸は、前記第2方向に対して傾斜し、
前記c軸は、前記上面に対して垂直な第3方向と交差する窒化物半導体装置。 - 前記c軸と前記上面との間の角度は、0度以上85度以下である請求項6〜8のいずれか1つに記載の窒化物半導体装置。
- 前記上面に前記c軸を投影した方向と、前記第2方向と、の間の角度は、5度以上85度以下である請求項6〜9のいずれか1つに記載の窒化物半導体装置。
- 前記窒化物半導体層の(11−22)面、(10−11)面、(11−20)面、及び、(10−10)面のいずれかは、前記上面に対して平行である請求項6〜10のいずれか1つに記載の窒化物半導体装置。
- 前記基板は、シリコン基板である請求項6〜11のいずれか1つに記載の窒化物半導体装置。
- 前記上面は、シリコンの(113)面、(001)面、(112)面、及び、(110)面のいずれかに対して平行である請求項12記載の窒化物半導体装置。
- 前記基板は、前記第2方向に並ぶ複数の凹部を有し、
前記複数の斜面のそれぞれは、前記複数の凹部のそれぞれの側面の一部である請求項6〜13のいずれか1つに記載の窒化物半導体装置。 - 前記基板は、前記第2方向に並ぶ複数の凹部を有し、
前記複数の凹部のそれぞれは、互いに向かい合う第1側面及び第2側面を含み、
前記複数の斜面のそれぞれは、前記複数の凹部のそれぞれの前記第1側面である請求項6〜13のいずれか1つに記載の窒化物半導体装置。 - 前記複数の凹部のそれぞれの深さは、0.3マイクロメートル以上3マイクロメートル以下である請求項6〜15のいずれか1つに記載の窒化物半導体装置。
- 前期複数の凹部のそれぞれの深さは、前記複数の凹部のそれぞれの間の前記上面の前記第2方向の長さの0.3倍以上3倍以下である請求項6〜16のいずれか1つに記載の窒化物半導体装置。
- 前記窒化物半導体層は、
第1半導体層と、
前記第1半導体層と前記基板との間に設けられた下地層と、
を含み、
前記第1半導体層における不純物濃度は、前記下地層における不純物濃度よりも高い請求項6〜17のいずれか1つに記載の窒化物半導体装置。 - 前記上面に対して平行な面内に並ぶ第1電極と、第2電極と、第3電極と、をさらに備え、
前記第1電極、前記第2電極及び前記第3電極と、前記基板と、の間に前記窒化物半導体層が配置され、
前記機能層は、第1層と、第2層と、を含み、
前記第1層と前記基板との間に前記第2層が配置され、
前記第1層の格子定数は、前記第2層の格子定数よりも小さい請求項6〜18のいずれか1つに記載の窒化物半導体装置。 - 上面と、前記上面に対して傾斜する複数の斜面と、を含む主面を有する基板であって、前記上面に対して平行な第1方向における前記複数の斜面のそれぞれの長さは、前記上面に対して平行で前記第1方向に対して垂直な第2方向における前記複数の斜面のそれぞれの長さよりも長く、前記複数の斜面は前記第2方向に並ぶ、前記基板を用意し、
前記複数の斜面からエピタキシャル成長により窒化物半導体層を成長させ、
前記窒化物半導体層のc軸は、前記第2方向に対して傾斜し、
前記c軸は、前記上面に対して垂直な第3方向と交差する窒化物半導体層の製造方法。
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