JP2015530753A - メサ形の電流伝導が改善されたalgainn半導体レーザ - Google Patents
メサ形の電流伝導が改善されたalgainn半導体レーザ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 230000000903 blocking effect Effects 0.000 claims abstract description 159
- 238000005253 cladding Methods 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 56
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 263
- 239000011777 magnesium Substances 0.000 description 17
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 16
- 229910052749 magnesium Inorganic materials 0.000 description 16
- 239000004047 hole gas Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- -1 for example Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
2 基体
3 上部層
4 p型コンタクト
5 n型コンタクト
6 活性領域
7 第1の側面
8 第2の側面
9 段部
10 n型クラッド層
11 第3の導波層
12 正孔ガス
13 第2の導波層
14 阻止層
15 第1の導波層
16 p型クラッド層
17 第1の阻止層
18 第2の阻止層
19 電流
20 第3の阻止層
21 中間層
23 別の段部
24 第1の間隔
25 第2の間隔
26 充填材料
Claims (15)
- 複数の層を積層した積層構造体を有する半導体レーザ(1)であって、
前記積層構造体は少なくとも、
a.n型ドープされたクラッド層(10)と、
b.第3の導波層(11)と、
c.内部に発光構造が配置されている活性領域(6)と、
d.第2の導波層(13)と、
e.阻止層(14)と、
f.第1の導波層(15)と、
g.p型ドープされたクラッド層(16)と
の積層体を有し、
前記第1,第2および第3の導波層(15,13,11)は、少なくともAIxInyGa(1−x−y)Nを含み、ここで、xは0〜1の間の値をとり、yは0〜1の間の値をとり、かつ、xとyとの和は0〜1の間の値をとり、
前記阻止層(14)のAl含有率は、隣接する前記第1の導波層(15)のAl含有率より少なくとも2%多く、
前記阻止層(14)のAl含有率は、前記第1の導波層(15)から前記第2の導波層(13)へ向かう方向に増加していき、
前記積層構造体は両側に段部(9)を有し、
前記両側の段部(9)は前記阻止層(14)の高さに位置していることにより、前記阻止層(14)の少なくとも一部または全部の幅が前記第1の導波層(15)の幅より大きくなっている
ことを特徴とする半導体レーザ(1)。 - 前記Al含有率は、前記第1の導波層(15)から前記第2の導波層(13)に向かう方向に階段状に増大していき、
前記阻止層(14)は、前記第2の導波層(13)側にある第1の阻止層(17)と、前記第1の導波層(15)側にある第2の阻止層(18)とに分かれており、
前記第1の阻止層(17)のAl含有率は、前記第2の阻止層(18)のAl含有率より少なくとも1%多い、
請求項1記載の半導体レーザ。 - 前記第1の導波層(15)の平均屈折率は、隣接する前記p型ドープされたクラッド層(16)の平均屈折率より高く、
前記第3の導波層(11)の平均屈折率は、隣接する前記n型ドープされたクラッド層(10)の平均屈折率より高い、
請求項1または2記載の半導体レーザ。 - 前記両側の段部は、前記第2の阻止層(18)の領域に、または前記第1の阻止層(17)の領域に位置する、
請求項2または3記載の半導体レーザ。 - 前記阻止層(14)のAl含有率は、前記第1の導波層から前記第2の導波層に向かう方向に、とりわけ直線状に増大していく、
請求項1から4までのいずれか1項記載の半導体レーザ。 - 前記第1の導波層(15)、前記第2の導波層(13)および前記阻止層(14)はp型ドープされており、
前記阻止層(14)のドープ濃度は前記第1の導波層(15)のドープ濃度以上であり、かつ、前記第2の導波層(13)のドープ濃度は前記第1の導波層(15)のドープ濃度より低濃度であり、
前記第2の導波層(13)はアンドープ層とすることもできる、
請求項1から5までのいずれか1項記載の半導体レーザ。 - 前記第1の阻止層(17)のp型ドープは、前記第1の導波層(15)のp型ドープより高濃度であり、
とりわけ、前記第2の阻止層(17,18)はp型ドープされており、
とりわけ、前記第1の阻止層(17)のドープは前記第2の阻止層(18)のドープより高濃度であり、
とりわけ、前記第2の阻止層のドープ濃度は前記第1の導波層(15)のドープ濃度以上であり、
とりわけ、前記第2の導波層(13)のドープは前記第1の導波層(15)のドープより低濃度である、
請求項2から5までのいずれか1項記載の半導体レーザ。 - 前記p型ドープされたクラッド層(16)のドープは、前記第1の導波層(15)のドープより高濃度である、
請求項1から7までのいずれか1項記載の半導体レーザ。 - 前記第1の導波層(15)と前記第2の導波層(13)との間に、とりわけ前記第1の阻止層(17)と前記第2の阻止層(18)との間に、中間層(21)を設けることができる、
請求項1から8までのいずれか1項記載の半導体レーザ。 - 前記阻止層は、少なくとも1つのAlGaN層および/またはAlInGaN層および/またはAlInN層を含む、
請求項1から9までのいずれか1項記載の半導体レーザ。 - 複数の層をY軸に沿って積層した積層構造体を有する半導体レーザの製造方法であって、
前記複数の層は、Z軸とX軸とにより定まる平面内にて延在し、
前記X軸とZ軸とY軸とは相互に直交し、前記Y軸は前記積層構造体の高さを表し、前記X軸は前記積層構造体の幅を表し、前記Z軸は前記積層構造体の長さを表し、
前記Y軸に沿って少なくとも、
a.n型ドープされたクラッド層と、
b.第3の導波層と、
c.内部に発光構造が配置された活性領域と、
d.第2の導波層と、
e.阻止層と、
f.第1の導波層と、
g.p型ドープされたクラッド層と
の積層体を形成する、製造方法において、
前記第1,第2および第3の導波層をAIxInyGa(1−x−y)Nから形成し、ここで、xは0〜1の間の値をとり、yは0〜1の間の値をとり、かつ、xとyとの和は0〜1の間の値をとり、
前記第1の導波層の平均屈折率を、隣接する前記p型ドープされたクラッド層の平均屈折率より高くし、かつ、前記第3の導波層の平均屈折率を、隣接する前記n型ドープされたクラッド層の平均屈折率より高くし、
前記阻止層には、隣接する前記第1の導波層のAl含有率より少なくとも2%多いAl含有率を含ませ、
前記阻止層のAl含有率は、前記第1の導波層から前記第2の導波層に向かう方向に増加するようにし、
前記積層構造体の、YX平面で見て両側に、対称的な段部を設け、
前記両側の段部を前記阻止層の高さに、当該阻止層に隣接するように、または当該阻止層内に配置することにより、当該阻止層の少なくとも一部の幅が前記第1の導波層の幅より大きくなるようにする
ことを特徴とする製造方法。 - 前記Al含有率を、前記第3の導波層から前記第2の導波層に向かう方向に階段状に増加させ、
前記阻止層を、前記第2の導波層側にある第1の阻止層と、前記第1の導波層側にある第2の阻止層とに分け、前記第1の阻止層には、前記第2の阻止層のアルミニウムより少なくとも1%多いアルミニウムを含有させる、
請求項11記載の製造方法。 - 前記両側の段部を、前記第1の阻止層または前記第2の阻止層の領域に配置する、
請求項11または12記載の製造方法。 - 前記阻止層のAl含有率を、前記第1の導波層から前記第2の導波層に向かう方向に増加させていき、とりわけ直線状に増加させていく、
請求項11から13までのいずれか1項記載の製造方法。 - 前記第1の導波層、前記第2の導波層および前記阻止層にp型ドープし、
前記阻止層のドープ濃度を前記第1の導波層のドープ濃度以上に規定し、かつ、前記第2の導波層のドープ濃度を前記第1の導波層のドープ濃度より低く規定する、
請求項11から14までのいずれか1項記載の製造方法。
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