JP2015529007A - 気相化学曝露による低誘電率誘電体の損傷修復 - Google Patents
気相化学曝露による低誘電率誘電体の損傷修復 Download PDFInfo
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- JP2015529007A JP2015529007A JP2015520198A JP2015520198A JP2015529007A JP 2015529007 A JP2015529007 A JP 2015529007A JP 2015520198 A JP2015520198 A JP 2015520198A JP 2015520198 A JP2015520198 A JP 2015520198A JP 2015529007 A JP2015529007 A JP 2015529007A
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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Abstract
Description
多孔性低誘電率誘電体層をビニルシラン含有化合物に曝露すること、および任意選択により多孔性低誘電率誘電体層を紫外線(UV)硬化プロセスに曝露することを含む。
UV硬化プロセスは、低誘電率誘電体膜100を処理チャンバ内に配置し、低誘電率誘電体膜100をUV放射に接触させるため、UV放射源を使用することによって実行される。UV放射源は、例えば、UVランプであってもよい。UV放射源は、処理チャンバの外側に配置され、処理チャンバはUV放射が通過しうる石英の窓を有していてもよい。低誘電率誘電体膜100は、例えば、HeまたはArなどの不活性ガス環境内に配置されてもよい。処理チャンバはまた、低誘電率誘電体膜100をUV放射に接触させる前にあるいは接触と同時に、低誘電率誘電体膜100を加熱するためのマイクロ波源を含んでもよい。UV硬化プロセスは、UV放射波長をシミュレートするプラズマを使用して実行されてもよい。プラズマはRF電力をHe、Ar、O2、およびN2などの処理ガスに結合させることによって形成される。プラズマは遠隔プラズマ源(RPS)によって形成され、処理チャンバに供給されてもよい。
本明細書に記載の実施態様の目的および利点は、以下の仮想例によってさらに説明される。特定の材料およびその量は、これらの実施例で記載される他の条件および詳細と同様に、本明細書に記載された実装態様を制限するために使用されるものではない。
化学曝露によるSi−Hの直接的低減:損傷された多孔性CDO膜を含む基板は最初にチャンバ内に配置される。次いでチャンバは、真空ポンプを使用して排気される。排気に続いて、トリメチルビニルシラン(TMVS、CH2=CH−SiMe3)がチャンバに導入される。Si−H部分はTMVSと反応して、Si−CH2−CH2−SiMe3を形成する。不活性ガスは同時に導入可能である。プロセス圧力は大気圧以下であってもよい。基板温度は室温以上であってもよい。反応を支援/加速するため紫外(UV)光曝露が使用されてもよい。最終的に基板は曝露後チャンバから取り出されるが、チャンバへの投入前よりも保持するSi−H結合は少ない。オレフィン、ビニルシラン、アセチルアセトン、ビニルアセテート、スチレン、およびアクリルアミドはSi−Hと反応することが知られている。これらの族の化学物質およびその誘導体は、TMVSの代わりに使用可能である。
酸化およびシリル化によるSi−Hの間接的低減:損傷された多孔性CDO膜を含む基板は最初にチャンバ内に配置される。次いでチャンバは、真空ポンプを使用して排気される。排気に続いて、酸素、亜酸化窒素、オゾン、またはこれらの混合物は、Si−Hの酸化を有効にしてSi−OHを形成するためにチャンバに導入される。不活性ガスは同時に導入可能である。プロセス圧力は大気圧以下であってもよい。基板温度は室温以上であってもよい。反応を支援/加速するため紫外(UV)光曝露が使用されてもよい。酸化後、基板はチャンバへの投入前よりも保持するSi−H結合は少なく、より多くのSi−OH結合を保持する。第2のステップとして、酸化後にシリル化が行われる。このステップでは、CTMSがチャンバに導入され、Si−OHと反応してSi−O−SiMe3を形成する。不活性ガスは同時に導入可能である。プロセス圧力は大気圧以下であってもよい。基板温度は室温以上であってもよい。反応を支援/加速するため紫外(UV)光曝露が使用されてもよい。最終的に基板はチャンバから取り出される。全体の結果として、酸化とシリル化によりSi−H結合が低減される。CTMSの代わりに、CTMS以外の1つまたは複数のシリル化剤が使用可能である。
Si−HおよびSi−OHの同時低減―技法I:Si−HおよびSi−OHは同時に低減可能である。損傷された多孔性CDO膜を含む基板は最初にチャンバ内に配置される。次いでチャンバは、真空ポンプを使用して排気される。排気に続いて、例示的な1つの可能な組み合わせとして、TMVSとCTMSの混合物が、Si−HおよびSi−OHを同時に低減するためチャンバに導入される。不活性ガスは同時に導入可能である。プロセス圧力は大気圧以下であってもよい。基板温度は室温以上であってもよい。反応を支援/加速するため紫外(UV)光曝露が使用されてもよい。最終的に基板は曝露後チャンバから取り出されるが、チャンバへの投入前よりも保持するSi−H結合およびSi−OH結合は少ない。
Si−HおよびSi−OHの同時低減―技法II:Si−HおよびSi−OHは同時に低減可能である。損傷された多孔性CDO膜を含む基板は最初にチャンバ内に配置される。次いでチャンバは、真空ポンプを使用して排気される。排気に続いて、例示的な1つの可能な組み合わせとして、亜酸化窒素とCTMSの混合物が、Si−HをSi−OHに変換し、同時にSi−OHを低減するためチャンバに導入される。不活性ガスは同時に導入可能である。プロセス圧力は大気圧以下であってもよい。基板温度は室温以上であってもよい。反応を支援/加速するため紫外(UV)光曝露が使用されてもよい。最終的に基板は曝露後チャンバから取り出されるが、チャンバへの投入前よりも保持するSi−H結合およびSi−OH結合は少ない。
Si−HおよびSi−OHの同時低減―技法III:Si−HおよびSi−OHは同時に低減可能である。損傷された多孔性CDO膜を含む基板は最初にチャンバ内に配置される。次いでチャンバは、真空ポンプを使用して排気される。排気に続いて、例示的な1つの可能な組み合わせとして、亜酸化窒素、TMVS、およびCTMSの混合物が、Si−HをSi−OHに変換してSi−Hを低減し、同時にSi−OHを低減するためチャンバに導入される。不活性ガスは同時に導入可能である。プロセス圧力は大気圧以下であってもよい。基板温度は室温以上であってもよい。反応を支援/加速するため紫外(UV)光曝露が使用されてもよい。最終的に基板は曝露後チャンバから取り出されるが、チャンバへの投入前よりも保持するSi−H結合およびSi−OH結合は少ない。
マルチステップ・カスケーティングによるSi−HおよびSi−OHの低減:A.本明細書で既に述べたSi−Hの直接的低減(例えば、実施例1)。B.本明細書で既に述べたSi−Hの間接的低減(例えば、実施例2)。C.シリル化によるSi−OHの低減(UVの同時照射ありまたはなし)。D.本明細書で既に述べたSi−HおよびSi−OH同時低減(例えば、実施例3)。E.本明細書で既に述べたSi−HおよびSi−OH同時低減(例えば、実施例4)。F.本明細書で既に述べたSi−HおよびSi−OH同時低減の技法III(例えば、実施例5)。G.ヘリウム、窒素、およびアルゴンなどの不活性ガスありまたはなしでのUV照射。これらのステップの順序は任意の並びであってもよく、各ステップは、基板がチャンバへ投入される時点と基板がチャンバから取り出される時点の間に、複数回使用されてもよい。本発明で既に述べたステップ(A、B、D、E、またはF)は、任意の順序で最低1回は現れる。例えば、1つの順序は、基板の投入→C→G→A→G→基板の取り出し、であってもよい。別の実施例は、基板の投入→C→A→G→基板の取り出し、であってもよい。
Claims (15)
- 損傷された低誘電率誘電体層を修復する方法であって、
多孔性低誘電率誘電体層をビニルシラン含有化合物に曝露することと;
任意選択により前記多孔性低誘電率誘電体層を紫外線(UV)硬化プロセスに曝露することと
を含む、方法。 - 多孔性低誘電率誘電体層をビニルシラン含有化合物に前記曝露すること、および前記多孔性低誘電率誘電体層をUV硬化プロセスに曝露することは同時に起こる、請求項1に記載の方法。
- 前記ビニルシラン含有化合物はトリメチルビニルシラン(TMVS)である、請求項3に記載の方法。
- 前記ビニルシラン含有化合物は気相にある、請求項3に記載の方法。
- 多孔性低誘電率誘電体層をビニルシラン含有化合物に曝露する前に、前記多孔性低誘電率誘電体層を処理チャンバに配置することをさらに含む、請求項1に記載の方法。
- 前記処理チャンバは50mTorrから500Torrの間の圧力にあり、前記誘電体層は100℃から400℃の間の温度にあり、前記ビニルシラン含有化合物は1sccmから10,000sccmの間の流量で前記処理チャンバに流し込まれ、前記誘電体層を100W/m2から2,000W/m2の間のUV照射出力で、かつ100nmから400nmのUV波長のUV放射に接触させる、請求項6に記載の方法。
- 前記多孔性低誘電率誘電体層をシリル化剤に曝露することをさらに含む、請求項1に記載の方法。
- 前記シリル化剤は、ヘキサメチルジシラザン(HMDS)、テトラメチルジシラザン(TMDS)、トリメチルクロロシラン(TMCS)、ジメチルジクロロシラン(DMDCS)、メチルトリクロロシラン(MTCS)、トリメチルメトキシシラン(TMMS)(CH3−O−Si−(CH3)3),ジメチルジメトキシシラン(DMDMS)((CH3)2−Si−(OCH3)2)、メチルトリメトキシシラン(MTMS)((CH3−O−)3−Si−CH3)、フェニルトリメトキシシラン(PTMOS)(C6H5−Si−(OCH3)3)、フェニルジメチルクロロシラン(PDMCS)(C6H5−Si(Cl)−(CH3)2)、ジメチルアミノトリメチルシラン(DMATMS)((CH3)2−N−Si−(CH3)3)、またはビス(ジメチルアミノ)ジメチルシラン(BDMADMS)を含むグループから選択される、請求項8に記載の方法。
- 前記多孔性低誘電率誘電体層を酸化化合物に曝露することをさらに含む、請求項8に記載の方法。
- 前記酸化化合物は、酸素(O2)、酸素含有化合物、オゾン(O3)、オゾン含有化合物、過酸化水素(H2O2)、過酸化物含有化合物、およびこれらの組み合わせを含むグループから選択される、請求項10に記載の方法。
- 前記多孔性低誘電率誘電体層をビニルシラン含有化合物に曝露すること、前記多孔性低誘電率誘電体層をシリル含有化合物に曝露すること、および前記多孔性低誘電率誘電体層を酸化化合物に曝露することは同時に起こる、請求項10に記載の方法。
- 多孔性低誘電率誘電体層を処理チャンバに配置することと;
多孔性低誘電率誘電体層を酸化化合物に曝露することと;
前記多孔性低誘電率誘電体層をシリル化剤に曝露することと;
任意選択により、前記多孔性低誘電率誘電体層を紫外線(UV)硬化プロセスに曝露することと
を含む、損傷された多孔性低誘電率誘電体層を修復する方法。 - 前記多孔性低誘電率誘電体層を酸化化合物に曝露すること、および前記多孔性低誘電率誘電体層をUV硬化プロセスに曝露することは同時に起こる、請求項13に記載の方法。
- 前記処理チャンバは50mTorrから500Torrの間の圧力にあり、前記誘電体層は100℃から400℃の間の温度にあり、前記シリル化剤は1sccmから10,000sccmの間の流量で前記処理チャンバに流し込まれ、かつ前記酸化化合物は1sccmから10,000sccmの間の流量で前記処理チャンバに流し込まれる、請求項13に記載の方法。
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TW201403711A (zh) | 2014-01-16 |
KR20150035505A (ko) | 2015-04-06 |
JP6192719B2 (ja) | 2017-09-06 |
CN104508805A (zh) | 2015-04-08 |
US20150111396A1 (en) | 2015-04-23 |
KR102138158B1 (ko) | 2020-07-27 |
US9123532B2 (en) | 2015-09-01 |
JP2018011061A (ja) | 2018-01-18 |
US8877659B2 (en) | 2014-11-04 |
JP6422536B2 (ja) | 2018-11-14 |
US20140004717A1 (en) | 2014-01-02 |
WO2014007924A1 (en) | 2014-01-09 |
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